Marking side (top view)

Size: px
Start display at page:

Download "Marking side (top view)"

Transcription

1 BL24C64 64Kbits (8,192 8) Features Compatible with all I 2 C bidirectional data transfer protocol Memory array: 64 Kbits (8 Kbytes) of EEPOM Page size: 32 bytes ingle supply voltage and high speed: 1 MHz andom and sequential ead modes Write: Byte Write within 3 ms Page Write within 3 ms Partial Page Writes llowed chmitt rigger, Filtered Inputs for Noise uppression High-reliability Endurance: 1 Million Write Cycles Data etention: 100 Years Enhanced ED/Latch-up protection HBM 8000V WLCP4 packages Description he BL24C64 provides bits of serial electrically erasable and programmable readonly memory (EEPOM), organized as 8192 words of 8 bits each. he device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. Pin Configuration WLCP4 1 2 Vcc Vss B CL D Marking side (top view) Pin Descriptions BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

2 X DECODE BL24C64 64Kbits (8,192 8) Block Diagram Pin Name ype Functions 1 Vcc P Power upply 2 Vss P Groung B1 CL I erial Clock Input B2 D I/O erial Data able 1 Vcc GND CL D OP LOGIC EIL CONOL LOGIC EN HIGH VOLGE PUMP/IMING DEVICE DDE COMPO LOD CCMP LOD INC D ECOVEY D WOD DE COUNE EEPOM Y DECODE EIL MUX DIN DOU/CKNOWLEDGE DOU Figure 1 EIL D (D): he D pin is bi-directional for serial data transfer. his pin is open-drain driven and may be wire-oed with any number of other open-drain or open- collector devices. EIL CLOCK (CL): he CL input is used to positive edge clock data into each EEPOM device and negative edge clock data out of each device. BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

3 BL24C64 64Kbits (8,192 8) Functional Description 1. Memory Organization BL24C64, 64K EIL EEPOM: Internally organized with 256 pages of 32 bytes each, the 64K requires a 13-bit data word address for random word addressing. 2. Device Operation CLOCK and D NIION: he D pin is normally pulled high with an external device. Data on the D pin may change only during CL low time periods (see Figure 2). Data changes during CL high periods will indicate a start or stop condition as defined below. CONDIION: high-to-low transition of D with CL high is a start condition which must precede any other command (see Figure 3). OP CONDIION: low-to-high transition of D with CL high is a stop condition. fter a read sequence, the stop command will place the EEPOM in a standby power mode (see Figure 3). CKNOWLEDGE: ll addresses and data words are serially transmitted to and from the EEPOM in 8-bit words. he EEPOM sends a "0" to acknowledge that it has received each word. his happens during the ninth clock cycle. NDBY MODE: he BL24C64 features a low-power standby mode which is enabled: (a) upon powerup and (b) after the receipt of the OP bit and the completion of any internal operations. MEMOY EE: fter an interruption in protocol, power loss or system reset, any two-wire part can be reset by following these steps: 1. Clock up to 9 cycles. 2. Look for D high in each cycle while CL is high. 3. Create a start condition. ILLEGL INUCION : he EEPOM maybe sends a "0" to acknowledge that it has received any one of the following two instruction as write/read instructions. 1.Device address= b. 2.Device address= b If device address= b,next step need 9 cycles Clock to stop the instruction. BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

4 BL24C64 64Kbits (8,192 8) Figure 2. Data Validity D CL D BLE D CHNGE D BLE Figure 3. tart and top Definition D CL OP Figure 4. Output cknowledge CL D IN D OU CKNOWLEDGE BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

5 BL24C64 64Kbits (8,192 8) 3. Device ddressing he 64K EEPOM devices all require an 8-bit device address word following a start condition to enable the chip for a read or write operation (see Figure 5) he device address word consists of a mandatory "1", "0" sequence for the first four most significant bits as shown. his is common to all the erial EEPOM devices. he four most significant bits of the slave address are fixed (1010). he next three bits are default to 0. he eighth bit of the device address is the read/write operation select bit. read operation is initiated if this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device address, the EEPOM will output a "0". If a compare is not made, the chip will return to a standby state. Figure 5. Device ddress MB LB /W 4. Write Operations BYE WIE: write operation requires two 8-bit data word address, as able2&able3, following the device address word and acknowledgment. Upon receipt of this address, the EEPOM will again respond with a "0" and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPOM will output a "0" and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. t this time the EEPOM enters an internally timed write cycle, tw, to the nonvolatile memory. ll inputs are disabled during this write cycle and the EEPOM will not respond until the write is complete (see Figure 6). PGE WIE: write operation requires two 8-bit data word address, as able2&able3, following the device address word and acknowledgment. Upon receipt of this address, the EEPOM will again respond with a "0" and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPOM will output a "0" and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. t this time the EEPOM enters an internally timed write cycle, tw, to the nonvolatile memory. ll inputs are disabled during this write cycle and the EEPOM will not respond until the write is complete (see Figure 7). he data word address lower five bits are internally incremented following the receipt of each data word. he higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than 32 data words are transmitted to the EEPOM, the data word address will "roll over" and previous data will be overwritten. BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

6 BL24C64 64Kbits (8,192 8) able 2. FI WOD DDE B12 B11 B10 B9 B8 able 3. ECOND WOD DDE B7 B6 B5 B4 B3 B2 B1 B0 CKNOWLEDGE POLLING: Once the internally timed write cycle has started and the EEPOM inputs are disabled, acknowledge polling can be initiated. his involves sending a start condition followed by the device address word. he read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPOM respond with a "0", allowing the read or write sequence to continue. 5. ead Operations ead operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to "1". here are three read operations: current address read, random address read and sequential read. CUEN DDE ED: he internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. his address stays valid between operations as long as the chip power is maintained. he address "roll over" during read is from the last byte of the last memory page to the first byte of the first page. he address "roll over" during write is from the last byte of the current page to the first byte of the same page. Once the device address with the read/write select bit set to "1" is clocked in and acknowledged by the EEPOM, the current address data word is serially clocked out. he microcontroller does not respond with an input "0" but does generate a following stop condition (see Figure 8). NDOM ED: random read requires a "dummy" byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPOM, the microcontroller must generate another start condition. he microcontroller now initiates a current address read by sending a device address with the read/write select bit high. he EEPOM acknowledges the device address and serially clocks out the data word. he microcontroller does not respond with a "0" but does generate a following stop condition (see Figure 9) EQUENIL ED: equential reads are initiated by either a current address read or a random address read. fter the microcontroller receives a data word, it responds with an acknowledge. s long as the EEPOM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will "roll over" and the sequential read will continue. he sequential read operation is terminated when the microcontroller does not respond with a "0" but does generate a following stop condition (see Figure 10). BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

7 BL24C64 64Kbits (8,192 8) Figure 6. Byte Write D LINE DEVICE DDE W I E FI WOD DDE ECOND WOD DDE D O P M B L / C B W K L C B K L C B K L C B K Note.1*=DON' CE bits Figure 7. Page Write DEVICE DDE W I E FI WOD DDE ECOND WOD DDE D(n) D(n+1) D(n+1) O P D LINE M B L / C B W K L C B K L C B K C K C K C K Note.1*=DON' CE bits Figure 8. Current ddress ead DEVICE DDE E D D O P D LINE M B L / C B W K NO CK Figure 9. andom ead DEVICE DDE W I E 1st,2nd WOD DDE DEVICE DDE E D D(n) O P D LINE M B L / C B W K L C B K C K NO CK DUMMY WIE Note.1*=DON' CE bits BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

8 BL24C64 64Kbits (8,192 8) Figure 10. equential ead DEVICE DDE E D D(n) D(n+1) D(n+2) D(n+x) O P D LINE / C W K C K C K C K NO CK BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

9 BL24C64 64Kbits (8,192 8) Electrical Characteristics bsolute Maximum tress atings: DC upply Voltage V to +6.5V Input / Output Voltage GND-0.3V to VCC+0.3V Operating mbient emperature to +85 torage emperature to +150 Electrostatic pulse (Human Body model) V Note1. Compliant with JEDEC standard J-D-020D (for small-body, n-pb or Pb free assembly). Comments: tresses above those listed under "bsolute Maximum atings" may cause permanent damage to this device. hese are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics pplicable over recommended operating range from: = -40 to +85, VCC = +1.7V to +5.5V (unless otherwise noted) Parameter ymbol Min yp Max Unit Condition upply Voltage VCC V - upply Current VCC=5.0V ICC m ED at 400KHZ upply Current VCC=5.0V ICC m WIE at 400KHZ upply Current VCC=5.0V IB μ VIN=VCC or V Input Leakage Current IL μ VIN=VCC or V Output Leakage Current ILO μ VOU=VCC or V Input Low Level VIL VCC 0.3 V VCC=1.7V to 5.5V Input High Level VIH1 VCC VCC+0.3 V VCC=1.7V to 5.5V Output Low Level VCC=1.7V VOL V IOL=2.1m Output Low Level VCC=5.0V VOL V IOL=3.0m able 4 Pin Capacitance pplicable over recommended operating range from = 25, f = 1.0 MHz, VCC = +1.7V Parameter ymbol Min yp Max Unit Condition Input/Output Capacitance(D) CI/O pf VIO=0V Input Capacitance(CL) CIN pf VIN=0V able 5 BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

10 BL24C64 64Kbits (8,192 8) C Electrical Characteristics pplicable over recommended operating range from = -40 to +85, VCC = +1.7V to +5.5V, CL = 1 L Gate and 100 pf (unless otherwise noted) Min yp Max Min yp Max Clock Frequency,CL fcl khz Clock Pulse Width Low tlow μs Clock Pulse Width High thigh μs Noise uppression ime ti ns Clock Low to Data Out Valid t μs ime the bus must be free before a new transmission can tbuf μs start tart Hold ime thd: μs tart etup ime tu: μs Data In Hold ime thd:d μs Data in etup ime tu:d ns Input ise ime(1) t μs Input Fall ime(1) tf μs top etup ime tu:o μs Data Out Hold ime tdh ns Write Cycle ime tw ms 5.0V,25,Byte Mode(1) Endurance 1M - - 1M - - Write Cycle Notes: Parameter ymbol 1.7V VCC < 2.5V 2.5V VCC < 5.5V able 6 1. his parameter is characterized and is not 100% tested. 2. C measurement conditions: L (connects to VCC): 1.3 k Input pulse voltages: 0.3 VCC to 0.7 VCC Input rise and fall time: 50 ns Input and output timing reference voltages: 0.5 VCC he value of L should be concerned according to the actual loading on the user's system. Units BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

11 BL24C64 64Kbits (8,192 8) Bus iming Figure 11. CL: erial Clock, D: erial Data I/O tf thigh tlow t CL tlow tu. thd. thd.d tu.d tu.o D_IN t tdh t BUF D_OU Write Cycle iming Figure 12. CL: erial Clock, D: erial Data I/O CL CK D Word n tw(1) OP CONDIION CONDIION Notes: he write cycle time tw is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle. BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

12 BL24C64 64Kbits (8,192 8) Package Information WLCP E X1 E1 X2 Y1 b D PIN1 D1 Y2 OP VIEW (MK IDE) BOOM VIEW (BLL IDE) 1 IDE VIEW 2 COMMON DIMENION (UNI OF MEUE=MILLIMEE) YMBOL MIN NOM MX D D1 E BC E1 b BC x1 x2 y1 y EF EF EF EF Notes: ll wafer orientation notch down BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

13 BL24C64 64Kbits (8,192 8) Marking Diagram 6YW 1 PIN MK Y:he last digits of the year W:week code. Y Year W Y Z a y z Week Ordering Information BL24C Code Description 1 Package type C: WLCP-4 2 Packing type : ape and eel BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

14 BL24C64 64Kbits (8,192 8) Device Package hipping(qty/packing) BL24C64-C- WLCP-4, 0.688*0.758 (Pb-Free/Halogen Free) 5000/ape &eel 2.0± ±0.1 B +0.1 Φ ± ± ±0.1 B Φ0.2± ± ± MX 0.44± MX ection ±0.05 ection B-B BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

15 BL24C64 64Kbits (8,192 8) evision History Version 1.0 BL24C64-C- Initial version Version 1.1 BL24C64-C- add marking diagram Update ordering information Version 1.2 BL24C64-C- 7/21/2017 Update DC electrical characteristics information Modify the format Version 1.21 BL24C64-C- 7/26/2017 Update ordering information Version 1.22 BL24C64-C- 7/26/2017 Update Figure 6. Byte Write Version 1.23 BL24C64-C- 2/27/2018 Update the C characteristics Version 1.23 BL24C64-C- 3/13/2018 Update the C characteristics Update the absolute maximum stress ratings note1. BL24C64 64Kbits (8,192 8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2016 Belling ll ights eserved

The BL24C128A provides 131,072 bits of serial electrically erasable and programmable read-only

The BL24C128A provides 131,072 bits of serial electrically erasable and programmable read-only Features Compatible with all data transfer protocol 1 MHz 400 khz 100 khz Memory array: 128 Kbit (16 Kbytes) of POM Page size: 64 bytes dditional Write lockable page ingle supply voltage and high speed:

More information

Features. Description. Pin Configuration. BL24C512A 512Kbits ( )

Features. Description. Pin Configuration. BL24C512A 512Kbits ( ) Features Compatible with all I 2 C bidirectional data transfer protocol Memory array: 512 Kbits (64 Kbytes) of POM Page size: 128 bytes dditional Write lockable page ingle supply voltage and high speed:

More information

HE24C K BITS EEPROM

HE24C K BITS EEPROM HuaHong Zealore Memory eries 256 BI EEPOM Features ompatible with all data transfer protocol Memory array: 256 bits (32 bytes) of EEPOM Page size: 64 bytes dditional Write lockable page ingle supply voltage

More information

Features. Description. Pin Configuration BL24C02A/04A/08A/16A

Features. Description. Pin Configuration BL24C02A/04A/08A/16A 2402/04/08/16 Features ompatible with all I 2 bidirectional data transfer protocol Memory array: 2 bits (256X 8) / 4 bits (512 X 8) / 8 bits (1024 X 8) / 16 bits (2048 X 8) of POM Page size: 16 bytes ingle

More information

512K bitstwo-wire Serial EEPROM

512K bitstwo-wire Serial EEPROM General Description The provides 524,288 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 65,536 words of 8 bits each. The device is optimized for use in many

More information

A24C08. AiT Semiconductor Inc. ORDERING INFORMATION

A24C08. AiT Semiconductor Inc.   ORDERING INFORMATION DESCRIPTION The provides 8192 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 1024 words of 8 bits each. The device is optimized for use in many industrial

More information

AT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8)

AT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) AT24C01A/02/04/08/16 Features Low Voltage and Standard Voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 2.5 (V CC = 2.5V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 128

More information

A24C02. AiT Semiconductor Inc. ORDERING INFORMATION

A24C02. AiT Semiconductor Inc.   ORDERING INFORMATION DESCRIPTION provides 2048 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 256 words of 8 bits each. The device is optimized for use in many industrial and

More information

A24C64. AiT Semiconductor Inc. ORDERING INFORMATION

A24C64. AiT Semiconductor Inc.   ORDERING INFORMATION DESCRIPTION provides 65536 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 8192 words of 8 bits each. The is optimized for use in many industrial and commercial

More information

Two-Wire Serial EEPROM 512K (8-bit wide)

Two-Wire Serial EEPROM 512K (8-bit wide) Fremont Micro Devices wo-ire erial EEPOM 512 (8-bit wide) F24512 FEUE Low voltage and low power operations: F24512: V = 1.8V to 5.5V Maximum tandby current < 1µ (typically 0.02µ and 0.06µ @ 1.8V and 5.5V

More information

Two-Wire Serial EEPROM 32K, 64K (8-bit wide)

Two-Wire Serial EEPROM 32K, 64K (8-bit wide) wo-wire erial EEPOM 32, 64 (8-bit wide) FEUE Low voltage and low power operations: F2432/64: V = 1.8V to 5.5V Maximum tandby current < 1µ (typically 0.02µ and 0.06µ @ 1.8V and 5.5V respectively). 32 bytes

More information

ISSI IS24C16-2, IS24C16-3 IS24C08-2, IS24C ,384-bit/8,192-bit 2-WIRE SERIAL CMOS EEPROM FEATURES PRODUCT OFFERING OVERVIEW DESCRIPTION

ISSI IS24C16-2, IS24C16-3 IS24C08-2, IS24C ,384-bit/8,192-bit 2-WIRE SERIAL CMOS EEPROM FEATURES PRODUCT OFFERING OVERVIEW DESCRIPTION 16,384-bit/8,192-bit 2-WIE EIL M EEPM MH 2000 FEUE Low Power M echnology -- tandby urrent less than 2 µ (5.5V) -- ead urrent (typical) less than 1 m (5.5V) -- Write urrent (typical) less than 3 m (5.5V)

More information

24C08/24C16. Two-Wire Serial EEPROM. Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) General Description. Pin Configuration

24C08/24C16. Two-Wire Serial EEPROM. Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) General Description. Pin Configuration Two-Wire Serial EEPROM Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) Low-voltage Operation 1.8 (VCC = 1.8V to 5.5V) Operating Ambient Temperature: -40 C to +85 C Internally Organized 1024 X 8 (8K),

More information

I 2 C BUS compatible serial EEPROM

I 2 C BUS compatible serial EEPROM Memory Is B2432 B2432F B2464 B2464F I 2 BU compatible serial M B2432 B2432F B2464 B2464F he B2432 and B2464 series are 2-wire (I 2 BU type) serial Ms which are electrically programmable. I 2 BU is a registered

More information

GT24C256A 2-WIRE. 256K Bits. Serial EEPROM

GT24C256A 2-WIRE. 256K Bits. Serial EEPROM G24256 G24256 2-WIE 256 Bits erial EEPOM opyright 2013 Giantec emiconductor Inc. (Giantec). ll rights reserved. Giantec reserves the right to make changes to this specification and its products at any

More information

2-Wire Serial EEPROM AT24C02A AT24C04A AT24C08A AT24C02A/04A/ 08A. Features. Description. Pin Configurations. 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8)

2-Wire Serial EEPROM AT24C02A AT24C04A AT24C08A AT24C02A/04A/ 08A. Features. Description. Pin Configurations. 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) Features Write Protect Pin for Hardware Data Protection Utilizes Different Array Protection Compared to the A24C02/04/08 Low Voltage and tandard Voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC =

More information

BL24C02/BL24C04/BL24C08/BL24C16

BL24C02/BL24C04/BL24C08/BL24C16 BL24C02/BL24C04/BL24C08/BL24C16 2K bits (256 X 8) / 4K bits (512 X 8) / 8K bits (1024 X 8) / 16K bits (2048 X 8) Two-wire Serial EEPROM Features Two-wire Serial Interface VCC = 1.8V to 5.5V Bi-directional

More information

CW24C32/CW24C64. 32Kbit and 64Kbit Serial I²C Bus EEPROM PIN CONFIGURATION

CW24C32/CW24C64. 32Kbit and 64Kbit Serial I²C Bus EEPROM PIN CONFIGURATION bit and 64bit erial I² us PM DIPIN he W4/64 is lectrically rasable PM. he device is organized as one block of 4096/89 x 8-bit memory with -wire serial interface. Low-voltage design permits operation down

More information

VCC TEST/WP SCL SDA. Figure 1. Table 1. Function

VCC TEST/WP SCL SDA. Figure 1. Table 1. Function ev. 2.2_3 MO 2-WIE EIL EEPOM -241/2/4 he -24X is a series of 2-wired, low power 1/2/4-bit EEPOMs with a wide operating range. hey are organized as 128-word 8-bit, 256-word 8-bit, and 512-word 8-bit, respectively.

More information

NOT RECOMMENDED FOR NEW DESIGN S-24C01C/02C 2-WIRE SERIAL E 2 PROM. Features. Packages. ABLIC Inc., Rev.4.

NOT RECOMMENDED FOR NEW DESIGN S-24C01C/02C 2-WIRE SERIAL E 2 PROM. Features. Packages.   ABLIC Inc., Rev.4. www.ablicinc.com BLIC Inc., 2008-2011 he is a 2-wire, low current consumption and wide range operation serial E 2 POM. he has the capacity of 1 K-bit and 2 K-bit, and the organization is 128 words 8-bit,

More information

FM24C02B/04B/08B/16B 2-Wire Serial EEPROM

FM24C02B/04B/08B/16B 2-Wire Serial EEPROM FM24C02B/04B/08B/16B 2-Wire Serial EEPROM Sep. 2009 FM24C02B/04B/08B/16B 2-Wire Serial EEPROM Ver 1.7 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION

More information

I 2 C-Compatible Serial E 2 PROM

I 2 C-Compatible Serial E 2 PROM P2428 I 2 -ompatible erial 2 P Data heet ev.. General Description he P2428 is a 28-bit I 2 -compatible erial P (lectrically rasable Programmable emory) device. It contains a memory array of 6 8 bits, which

More information

ACE24C512C Two-wire serial EEPROM

ACE24C512C Two-wire serial EEPROM Description The ACE24C512C is a 512-Kbit I 2 C-compatible Serial EEPROM (Electrically Erasable Programmable Memory) device. It contains a memory array of 64 K 8 bits, which is organized in 128-byte per

More information

FM24C02A 2-Wire Serial EEPROM

FM24C02A 2-Wire Serial EEPROM FM24C02A 2-Wire Serial EEPROM Apr. 2010 FM24C02A 2-wrie Serial EEPROM Ver 1.3 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS

More information

S-24C32C/64C 2-WIRE SERIAL E 2 PROM. Features. Packages. Seiko Instruments Inc Seiko Instruments Inc., Rev.4.

S-24C32C/64C 2-WIRE SERIAL E 2 PROM. Features. Packages. Seiko Instruments Inc Seiko Instruments Inc., Rev.4. -2432/64 www.sii-ic.com 2-WIE EIL E 2 POM eiko Instruments Inc., 2009-2013 ev.4.0_01_h he -2432/64 is a 2-wire, low current consumption and wide range operation serial E 2 POM. he -2432/64 has the capacity

More information

深圳市馨晋商电子有限公司 Shenzhen XinJinShang Electronics Co. Ltd.

深圳市馨晋商电子有限公司 Shenzhen XinJinShang Electronics Co. Ltd. Two-Wire Serial EEPROM FEATURES Low voltage and low power operations: AT24C32N/64N: VCC = 1.8V to 5.5V Maximum Standby current

More information

S-24C128C 2-WIRE SERIAL E 2 PROM. Features. Packages. Seiko Instruments Inc Seiko Instruments Inc., Rev.4.

S-24C128C 2-WIRE SERIAL E 2 PROM. Features. Packages. Seiko Instruments Inc Seiko Instruments Inc., Rev.4. www.sii-ic.com eiko Instruments Inc., 2009-2013 he is a 2-wire, low current consumption and wide range operation serial E 2 POM. he has the capacity of 128-bit, and the organization is 16384 words 8-bit.

More information

HT24LC02A CMOS 2K 2-Wire Serial EEPROM

HT24LC02A CMOS 2K 2-Wire Serial EEPROM CMOS 2K 2-Wire Serial EEPROM Features Operating voltage 1.8V~.V for temperature -40 C to +8 C Low power consumption Operation: ma max. Standby: 2μA max. Internal organization: 26 8 2-wire serial interface

More information

Turbo IC, Inc. 24C128/24C256

Turbo IC, Inc. 24C128/24C256 urbo I, Inc. 2412824256 DU IINY I² 2-I U 128256 IY G 1632 X 8 I FU : xtended ower upply Voltage ingle Vcc for ead and rogramming (Vcc = 2.7 V to 5.5 V)(Vcc = 4.5V to 5.5V) ow ower (Isb = 2µa @ 5.5 V) xtended

More information

Two-wire Serial EEPROM

Two-wire Serial EEPROM wo-wire erial EEPROM BM24C128D Bestow Mascot Publication Number: BM24C128D Revision:2.3 Issue Date: May. 14,2015 BM24C128D Preliminary datasheet wo-wire erial EEPROM Features: Low-voltage and tandard-voltage

More information

GT24C128D 2-WIRE. 128K Bits. Serial EEPROM

GT24C128D 2-WIRE. 128K Bits. Serial EEPROM dvanced G24128D 2-WIRE 128 Bits erial EEPROM opyright 2014 Giantec emiconductor Inc. (Giantec). ll rights reserved. Giantec reserves the right to make changes to this specification and its products at

More information

ZD24C32A. I 2 C-Compatible (2-wire) Serial EEPROM. 32-Kbit (4,096 x 8) DATASHEET. Features. Description. Low Voltage Operation

ZD24C32A. I 2 C-Compatible (2-wire) Serial EEPROM. 32-Kbit (4,096 x 8) DATASHEET. Features. Description. Low Voltage Operation I 2 C-Compatible (2-wire) Serial EEPROM 32-Kbit (4,096 x 8) DATASHEET Features Low Voltage Operation VCC = 1.7V to 5.5V Internally Organized as 4,096 x 8 (32Kb) Additional Write lockable page I 2 C-compatible

More information

S-24C128C 2-WIRE SERIAL E 2 PROM. Features. Packages. ABLIC Inc., Rev.4.0_03_H

S-24C128C 2-WIRE SERIAL E 2 PROM. Features. Packages.  ABLIC Inc., Rev.4.0_03_H -24128 www.ablicinc.com 2-WIE EIL E 2 POM BLI Inc., 2009-2013 ev.4.0_03_h he -24128 is a 2-wire, low current consumption and wide range operation serial E 2 POM. he -24128 has the capacity of 128-bit,

More information

2-wire Serial EEPROM Smart Card Modules AT24C32SC AT24C64SC

2-wire Serial EEPROM Smart Card Modules AT24C32SC AT24C64SC Features Low-voltage and Standard-voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) Internally Organized 4096 x 8, 8192 x 8 2-wire Serial Interface Schmitt Trigger, Filtered Inputs

More information

2-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 AT24C16

2-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 AT24C16 Features Low-voltage and Standard-voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 2.5 (V CC = 2.5V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 128 x 8 (1K), 256 x 8 (2K),

More information

S-24C08C (WLP PRODUCT)

S-24C08C (WLP PRODUCT) -2408 (WLP PODU) www.ablicinc.com 2-WIE EIL E 2 POM BLI Inc., 2016 ev.1.0_01_h he -2408 is a 2-wire, low current consumption and wide range operation serial E 2 POM. he -2408 has the capacity of 8 -bit,

More information

2-wire Serial EEPROM AT24C512. Preliminary. 2-Wire Serial EEPROM 512K (65,536 x 8) Features. Description. Pin Configurations.

2-wire Serial EEPROM AT24C512. Preliminary. 2-Wire Serial EEPROM 512K (65,536 x 8) Features. Description. Pin Configurations. Features Low-voltage and Standard-voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 1.8 (V CC = 1.8V to 3.6V) Internally Organized 65,536 x 8 2-wire Serial Interface Schmitt Triggers,

More information

S-24C02D/04D/08D/16D 2-WIRE SERIAL E 2 PROM. Features. Packages. ABLIC Inc., 2012 Rev.3.0_02_U

S-24C02D/04D/08D/16D 2-WIRE SERIAL E 2 PROM. Features. Packages.  ABLIC Inc., 2012 Rev.3.0_02_U -2402D/04D/08D/16D www.ablicinc.com 2-WIE EIL E 2 POM BLI Inc., 2012 ev.3.0_02_u his I is a 2-wire, low current consumption and wide range operation serial E 2 POM. his I has the capacity of 2 -bit, 4

More information

GT24C64A 2-WIRE. 64K Bits. Serial EEPROM

GT24C64A 2-WIRE. 64K Bits. Serial EEPROM G2464 dvanced G2464 2-WIRE 64 Bits erial EEPROM opyright 2014 Giantec emiconductor Inc. (Giantec). ll rights reserved. Giantec reserves the right to make changes to this specification and its products

More information

Caution Before using the product in automobile control unit or medical equipment, contact to ABLIC Inc. is indispensable.

Caution Before using the product in automobile control unit or medical equipment, contact to ABLIC Inc. is indispensable. -24128 H eries www.ablicinc.com FO UOMOIVE 105 OPEION 2-WIE EIL E 2 POM BLI Inc., 2010-2018 ev.2.1_03_h he -24128 H series is a high temperature operation 2-wire serial E 2 POM for automotive components.

More information

2-WIRE. 64K Bits. Serial EEPROM

2-WIRE. 64K Bits. Serial EEPROM G2464 2-WIRE 64 Bits erial EEPROM opyright 2011 Giantec emiconductor Inc. (Giantec). ll rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without

More information

GT24C128B 2-WIRE. 128K Bits. Serial EEPROM

GT24C128B 2-WIRE. 128K Bits. Serial EEPROM dvanced G24128B 2-WIRE 128 Bits erial EEPROM opyright 2014 Giantec emiconductor Inc. (Giantec). ll rights reserved. Giantec reserves the right to make changes to this specification and its products at

More information

Distributed by: www.jameco.com 1-800-831-4242 he content and copyrights of the attached material are the property of its owner. FM24256 256 Bit 2-Wire Bus Interface erial EEPROM with Write Protect General

More information

S-24C32C/64C 2-WIRE SERIAL E 2 PROM. Features. Packages. ABLIC Inc., Rev.4.0_03_H

S-24C32C/64C 2-WIRE SERIAL E 2 PROM. Features. Packages.     ABLIC Inc., Rev.4.0_03_H -2432/64 www.ablic.com www.ablicinc.com 2-WIE EIL E 2 POM BLI Inc., 2009-2013 ev.4.0_03_h he -2432/64 is a 2-wire, low current consumption and wide range operation serial E 2 POM. he -2432/64 has the capacity

More information

Caution Before using the product in automobile control unit or medical equipment, contact to ABLIC Inc. is indispensable.

Caution Before using the product in automobile control unit or medical equipment, contact to ABLIC Inc. is indispensable. -2416 H eries www.ablicinc.com FO UOMOIVE 105 OPEION 2-WIE EIL E 2 POM BLI Inc., 2010-2017 ev.3.0_01_h he -2416 H series is a high temperature operation 2-wire serial E 2 POM for automotive components.

More information

ACE24AC64 Two-wire Serial EEPROM

ACE24AC64 Two-wire Serial EEPROM Description The ACE24AC64 series are 65,536 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 8192 words of 8 bits (one byte) each. The

More information

24LC08. 8K-Bit Serial EEPROM OVERVIEW FEATURES ORDERING INFORMATION

24LC08. 8K-Bit Serial EEPROM OVERVIEW FEATURES ORDERING INFORMATION OVERVIEW 2 TM The 24L08 serial EEPROM has a 8,192-bit (1,024-byte) capacity, supporting the standard I -bus serial interface. It is fabricated using ERMTE's most advanced MOS technology. One of its major

More information

GT24C02. 2-Wire. 2Kb Serial EEPROM (Smart Card application)

GT24C02. 2-Wire. 2Kb Serial EEPROM (Smart Card application) ADVANCED GT24C02 2-Wire 2Kb Serial EEPROM (Smart Card application) www.giantec-semi.com a0 1/19 Table of Content 1 FEATURES...3 2 DESCRIPTION...4 3 PIN CONFIGURATION...5 4 PIN DESCRIPTIONS...6 5 BLOCK

More information

S-24CM01C 2-WIRE SERIAL E 2 PROM. Features. Package. ABLIC Inc., Rev.2.0_03_S

S-24CM01C 2-WIRE SERIAL E 2 PROM. Features. Package.  ABLIC Inc., Rev.2.0_03_S -24M01 www.ablicinc.com 2-IE EIL E 2 POM BLI Inc., 2010-2013 ev.2.0_03_ he -24M01 is a 2-wire, low current consumption and wide range operation serial E 2 POM. he -24M01 has the capacity of 1 M-bit, and

More information

GT24C WIRE. 1024K Bits. Serial EEPROM

GT24C WIRE. 1024K Bits. Serial EEPROM GT24C1024 2-WIRE 1024K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at

More information

ACE24AC128 Two-wire Serial EEPROM

ACE24AC128 Two-wire Serial EEPROM Description The ACE24AC128 series are 131,072 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 16,384 words of 8 bits (one byte) each.

More information

Fremont Micro Devices, Inc.

Fremont Micro Devices, Inc. FEATURES Low voltage and low power operations: FT24C02/04/08/16: V CC = 2.5V to 5.5V FT24C02A/04A/08A/16A: V CC = 1.8V to 5.5V Maximum Standby current < 1µA (typically 0.02µA and 0.06µA @ 1.8V and 5.5V

More information

ACE24AC02A1 Two-wire Serial EEPROM

ACE24AC02A1 Two-wire Serial EEPROM Description The ACE24AC02A1 is 2048 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 256 words of 8 bits (1 byte) each. The devices

More information

2-wire Serial EEPROM AT24C512

2-wire Serial EEPROM AT24C512 Features Low-voltage and Standard-voltage Operation 5.0 (V CC = 4.5V to 5.5V). (V CC =.V to 5.5V). (V CC =.V to.v) Internally Organized 5,5 x -wire Serial Interface Schmitt Triggers, Filtered Inputs for

More information

GT24C256 2-WIRE. 256K Bits. Serial EEPROM

GT24C256 2-WIRE. 256K Bits. Serial EEPROM GT24C256 2-WIRE 256K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any

More information

S-34C02B 2-WIRE SERIAL E 2 PROM FOR DIMM SERIAL PRESENCE DETECT

S-34C02B 2-WIRE SERIAL E 2 PROM FOR DIMM SERIAL PRESENCE DETECT www.ablicinc.com -3402 2-IE EIL E 2 POM FO DIMM EIL PEENE DEE LI Inc., 2012-2013 ev.1.0_03_u his I is a 2-wire serial E 2 POM for DIMM erial Presence Detect which operates with low current consumption

More information

ACE24AC16B Two-wire Serial EEPROM

ACE24AC16B Two-wire Serial EEPROM Description The ACE24AC16B is 16,384 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 2,048 words of 8 bits (1 byte) each. The devices

More information

2-wire Serial EEPROMs AT24C128 AT24C256. Features. Description. Pin Configurations. 128K (16,384 x 8) 256K (32,768 x 8)

2-wire Serial EEPROMs AT24C128 AT24C256. Features. Description. Pin Configurations. 128K (16,384 x 8) 256K (32,768 x 8) Features Low-voltage and Standard-voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V). (V CC =.V to 3.6V) Internally Organized 6,34 x and 32,76 x 2-wire Serial Interface Schmitt Trigger,

More information

256 8 bit Electrically Erasable PROM (based on Serial Presence Detect)

256 8 bit Electrically Erasable PROM (based on Serial Presence Detect) Memory Is 8 bit Electrically Erasable POM (based on erial Presence Detect) he is a k bit EEPOM memory with write-protect function having independent rewrite inhibit area, developed for a DIMM that uses

More information

Two-wire Serial EEPROM

Two-wire Serial EEPROM Major ower echnology o.,ltd. Feature M2 L32/M2L6 wowire erial EEM 32 bit (096 X 8) / 6 bit (8192 X 8) WideVoltageperation V=1.7Vto5.5V peratingmbientemperature: 0 to+70 Internallyrganized: W2L32, 096 X

More information

GT24C64 2-WIRE. 64K Bits. Serial EEPROM

GT24C64 2-WIRE. 64K Bits. Serial EEPROM GT24C64 2-WIRE 64K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any

More information

FM24C1024A. Apr Data Sheet. Data Sheet FM24C1024A 2-wrie Serial EEPROM Ver 1.1 1

FM24C1024A. Apr Data Sheet. Data Sheet FM24C1024A 2-wrie Serial EEPROM Ver 1.1 1 FM24C1024A 2-Wire Serial EEPROM Apr. 2013 FM24C1024A 2-wrie Serial EEPROM Ver 1.1 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS

More information

ACE24AC02A3C Two-wire Serial EEPROM

ACE24AC02A3C Two-wire Serial EEPROM Description The ACE24AC02A3C is 2048 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 256 words of 8 bits (1 byte) each. The devices

More information

DS1845 Dual NV Potentiometer and Memory

DS1845 Dual NV Potentiometer and Memory www.maxim-ic.com FEATURES Two linear taper potentiometers -010 one 10k, 100 position & one 10k, 256 position -050 one 10k, 100 position & one 50k, 256 postition -100 one 10k, 100 position & one 100k, 256

More information

NM24C16U/NM24C17U 16K-Bit Serial EEPROM 2-Wire Bus Interface

NM24C16U/NM24C17U 16K-Bit Serial EEPROM 2-Wire Bus Interface NM2416U/NM2417U 16-Bit erial EEPROM 2-Wire Bus Interface General Description he NM2416U/17U devices are 16 (16,384) bit serial interface MO EEPROMs (Electrically Erasable Programmable Read- Only Memory).

More information

GT24C32A 2-WIRE. 32K Bits. Serial EEPROM

GT24C32A 2-WIRE. 32K Bits. Serial EEPROM GT24C32A 2-WIRE 32K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any

More information

FM24C32A/64A 2-Wire Serial EEPROM

FM24C32A/64A 2-Wire Serial EEPROM FM24C32A/64A 2-Wire Serial EEPROM Nov. 2009 FM24C32A/64A 2-Wire Serial EEPROM Ver 1.5 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN

More information

MR44V064A GENERAL DESCRIPTION FEATURES. FEDR44V064A-01 Issue Date: Apr. 22, k(8,192-Word 8-Bit) FeRAM (Ferroelectric Random Access Memory)

MR44V064A GENERAL DESCRIPTION FEATURES. FEDR44V064A-01 Issue Date: Apr. 22, k(8,192-Word 8-Bit) FeRAM (Ferroelectric Random Access Memory) 64k(8,192-ord 8-Bit) FeM (Ferroelectric andom ccess Memory) Issue ate: pr. 22, 213 GENEL EIPION he is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeM) developed in the ferroelectric

More information

Two-wire Serial EEPROM Smart Card Modules 128K (16,384 x 8) 256 (32,768 x 8) AT24C128SC AT24C256SC. Features. Description VCC NC

Two-wire Serial EEPROM Smart Card Modules 128K (16,384 x 8) 256 (32,768 x 8) AT24C128SC AT24C256SC. Features. Description VCC NC Features Low-voltage and Standard-voltage Operation, V CC = 2.7V to 5.5V Internally Organized 16,384 x 8 and 32,768 x 8 2-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bi-directional

More information

GT34C02. 2Kb SPD EEPROM

GT34C02. 2Kb SPD EEPROM Advanced GT34C02 2Kb SPD EEPROM Copyright 2010 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without

More information

深圳市馨晋商电子有限公司电可擦可编程只读存储器 (EEPROM) AT24C02N VER:F4-1

深圳市馨晋商电子有限公司电可擦可编程只读存储器 (EEPROM) AT24C02N VER:F4-1 Two-Wire Serial EEPROM 2K (16-bit wide) 一 FEATURES Low voltage and low power operations: AT24C02N-XXX: VCC = 1.8V to 5.5V, Industrial temperature range (-40 to 85 ). Maximum Standby current < 1µA (typically

More information

FM24C64 64Kb FRAM Serial Memory Features

FM24C64 64Kb FRAM Serial Memory Features 64Kb FRM Serial Memory Features 64K bit Ferroelectric Nonvolatile RM Organized as 8,192 x 8 bits High Endurance 1 Trillion (10 12 ) Read/Writes 10 Year Data Retention NoDelay Writes dvanced High-Reliability

More information

ISSI IS25C02 IS25C04 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM FEATURES DESCRIPTION. Advanced Information January 2005

ISSI IS25C02 IS25C04 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM FEATURES DESCRIPTION. Advanced Information January 2005 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM January 2005 FEATURES Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) Low power CMOS Active current less than 3.0

More information

MR44V100A GENERAL DESCRIPTION FEATURES 1/18. FEDR44V100A-01 Issue Date: Sep. 04, 2017

MR44V100A GENERAL DESCRIPTION FEATURES 1/18. FEDR44V100A-01 Issue Date: Sep. 04, 2017 1M Bit(131,2-ord -ord 8-Bit) FeM (Ferroelectric andom ccess Memory) I2 Issue ate: ep. 4, 21 GENEL EIPION he is a nonvolatile 131,2-word x 8-bit ferroelectric random access memory (FeM) developed in the

More information

BR24Sxxx-W (8K 16K 32K 64K 128K 256K)

BR24Sxxx-W (8K 16K 32K 64K 128K 256K) erial EEPOM series tandard EEPOM I 2 BU EEPOM (2-Wire) B24xxx-W (8 16 32 64 128 256) General Description B24xxx-W is a serial EEPOM of I 2 BU interface method Features ompletely conforming to the world

More information

FM24C Kb FRAM Serial Memory Features

FM24C Kb FRAM Serial Memory Features Preliminary FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 10 Billion (10 10 ) Read/Writes 45 year Data Retention NoDelay Writes

More information

S-34C04A 2-WIRE SERIAL E 2 PROM FOR DIMM SERIAL PRESENCE DETECT

S-34C04A 2-WIRE SERIAL E 2 PROM FOR DIMM SERIAL PRESENCE DETECT www.ablicinc.com -3404 2-I IL 2 POM FO DIMM IL PN D LI Inc., 2013 ev.1.0_02_u his I is a 2-wire serial 2 POM for DIMM serial presence detect which operates in 1.7 V to 3.6 V voltage ranges. his I has the

More information

RM24C64AF 64-Kbit 1.65V Minimum Non-volatile Fast Write Serial EEPROM I 2 C Bus

RM24C64AF 64-Kbit 1.65V Minimum Non-volatile Fast Write Serial EEPROM I 2 C Bus 64-Kbit 1.65V Minimum Non-volatile Fast Write Serial EEPROM I 2 C Bus Advance Datasheet Features Memory array: 64Kbit EEPROM-compatible non-volatile serial memory Single supply voltage: 1.65V - 2.2V 2-wire

More information

AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations

AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations Features Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram (Erase and Program) Internal Address and Data Latches for 64-Bytes Internal Program Control

More information

100khz and 400khz compatibility 2-wire serial interface: I 2 C/SMBus compatible SMBus Timeout supported. Serial EEPROM Features

100khz and 400khz compatibility 2-wire serial interface: I 2 C/SMBus compatible SMBus Timeout supported. Serial EEPROM Features tmel 30E002B Integrated emperature ensor with EEPOM DHEE Features Integrated emperature ensor () + 2-bit erial EEPOM JEDE (J42.4) O-DIMM PD + compliant tandard voltage operation Optimized for voltage range:

More information

FM24CL04 4Kb FRAM Serial Memory

FM24CL04 4Kb FRAM Serial Memory 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits Unlimited Read/Writes 45 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process

More information

24AA128/24LC128/24FC128

24AA128/24LC128/24FC128 18K I C CMOS Serial EEPROM Device Selection Table Part Number Range Max. Clock Frequency Temp. Ranges Temperature ranges: - Industrial (I): -0 C to +8 C - Automotive (E): -0 C to +1 C A8 1.-.V 00 khz (1)

More information

K24C02(C)/K24C04/K24C08(C)/K24C16

K24C02(C)/K24C04/K24C08(C)/K24C16 wowire erial EEM Feature Wide Voltage peration V = 1.8V to 5.5V perating mbient emperature: 40 to +85 Internally rganized: 2402(), 256 X 8 (2 bit) 2404, 512 X 8 (4 bit) 2408(), 1024 X 8 (8 bit) 2416, 2048

More information

24C32 / 24C64. Features. General Description. Pin Configuration. Pin Descriptions

24C32 / 24C64. Features. General Description. Pin Configuration. Pin Descriptions 2432 / 2464 Feature ide Voltage peration V = 1.8V to 5.5V perating mbient emperature: 40 to +85 Internally rganized: 2432, 4096 X 8 (32 bit) 2464, 8192 X 8 (64 bit) wowire erial Interface chmitt rigger,

More information

I 2 C Serial EEPROM Family Data Sheet

I 2 C Serial EEPROM Family Data Sheet 24AA00/24LC00/24C00 24AA01/24LC01B 24AA014/24LC014 24C01C 24AA02/24LC02B 24C02C 24AA024/24LC024 24AA025/24LC025 24AA04/24LC04B 24AA08/24LC08B 24AA16/24LC16B 24AA32A/24LC32A 24AA64/24LC64/24FC64 24AA128/24LC128/24FC128

More information

MR44V064B GENERAL DESCRIPTION FEATURES 1/16. FEDR44V064B-01 Issue Date: Jan. 08, 2016

MR44V064B GENERAL DESCRIPTION FEATURES 1/16. FEDR44V064B-01 Issue Date: Jan. 08, 2016 M44V64B 64k(8,192-ord 8-Bit) FeM (Ferroelectric andom ccess Memory) I2 FE44V64B-1 Issue ate: Jan. 8, 216 GENEL EIPION he M44V64B is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeM)

More information

24AA01/24LC01B. 1K I 2 C Serial EEPROM. Description: Device Selection Table. Features: Package Types. Block Diagram. Part Number.

24AA01/24LC01B. 1K I 2 C Serial EEPROM. Description: Device Selection Table. Features: Package Types. Block Diagram. Part Number. K I C Serial EEPROM Device Selection Table Part Number Features: Range Max. Clock Frequency Temp. Ranges AA0.7-. 00 khz () I LC0B.-. 00 khz I, E Note : 00 khz for

More information

2-wire Serial EEPROMs AT24C128 AT24C256

2-wire Serial EEPROMs AT24C128 AT24C256 Features Low-voltage and Standard-voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2. (V CC = 2.V to 5.5V) 2.5 (V CC = 2.5V to 5.5V). (V CC =.V to 3.6V) Internally Organized 6,34 x and 32,6 x 2-wire Serial

More information

Two-wire Serial EEPROM Smart Card Modules 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) 16K (2048 x 8)

Two-wire Serial EEPROM Smart Card Modules 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) 16K (2048 x 8) Features Low-voltage and Standard-voltage Operation, VCC = 2.7V 5.5V Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K), 1024 x 8 (8K), or 2048 x 8 (16K) Two-wire Serial Interface Schmitt Trigger,

More information

BR34L02-W Capacity Bit format Type Power Source Voltage SSOP-B8 TSSOP-B8 2Kbit 256 x 8 BR34L02-W 1.7V to 5.5V

BR34L02-W Capacity Bit format Type Power Source Voltage SSOP-B8 TSSOP-B8 2Kbit 256 x 8 BR34L02-W 1.7V to 5.5V erial EEPOM eries tandard EEPOM Plug & Play EEPOM B34L02-W General Description B34L02-W is 256 8 bit Electrically Erasable POM (Based on erial Presence Detect) Features 256 8 bit architecture serial EEPOM

More information

4K Bits SPD EEPROM GT34C04. Advanced A2 1/26

4K Bits SPD EEPROM GT34C04. Advanced A2 1/26 dvanced 4 Bits PD EEPOM opyright 2014 Giantec emiconductor Inc. (Giantec). ll rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without notice.

More information

LE24512AQF. Overview. Functions. CMOS IC Two Wire Serial Interface EEPROM (512k EEPROM)

LE24512AQF. Overview. Functions. CMOS IC Two Wire Serial Interface EEPROM (512k EEPROM) Ordering number : ENA2087 LE24512AQF CMOS IC Two Wire Serial Interface EEPROM (512k EEPROM) http://onsemi.com Overview The LE24512AQF (hereinafter referred to as this device ) is a two-wire serial interface

More information

93C76/86. 8K/16K 5.0V Microwire Serial EEPROM FEATURES DESCRIPTION PACKAGE TYPES BLOCK DIAGRAM

93C76/86. 8K/16K 5.0V Microwire Serial EEPROM FEATURES DESCRIPTION PACKAGE TYPES BLOCK DIAGRAM 8K/16K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES Single 5.0V supply Low power CMOS technology - 1 ma active current typical ORG pin selectable memory configuration 1024 x 8- or 512 x 16-bit organization

More information

FM24C Kb FRAM Serial Memory Features

FM24C Kb FRAM Serial Memory Features 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 10 Billion (10 10 ) Read/Writes 45 year Data Retention NoDelay Writes Advanced High-Reliability

More information

ISSI Preliminary Information January 2006

ISSI Preliminary Information January 2006 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM January 2006 FEATURES Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) Low-voltage Operation Vcc = 1.8V to 5.5V Low

More information

FM24C64C-GTR. 64Kb Serial 5V F-RAM Memory Features. Pin Configuration. Description A0 A1 A2 VSS VDD SCL SDA. Ordering Information.

FM24C64C-GTR. 64Kb Serial 5V F-RAM Memory Features. Pin Configuration. Description A0 A1 A2 VSS VDD SCL SDA. Ordering Information. Preliminary FM24C64C 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion (10 12 ) Read/Writes 36 Year Data Retention at +75

More information

AT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations

AT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations Features Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor

More information

24AA16/24LC16B. 16K I 2 C Serial EEPROM. Device Selection Table. Description: Features: Package Types. Block Diagram. Temp. Ranges.

24AA16/24LC16B. 16K I 2 C Serial EEPROM. Device Selection Table. Description: Features: Package Types. Block Diagram. Temp. Ranges. 6K I C Serial EEPROM Device Selection Table Part Number Features: Vcc Range Max. Clock Frequency Temp. Ranges A6.7-. 00 khz () I LC6B.-. 00 khz I, E Note : 00 khz for

More information

2-wire Serial EEPROM AT24C21. 2-Wire, 1K Serial EEPROM. Features. Description. Not Recommended for New Designs. Pin Configurations.

2-wire Serial EEPROM AT24C21. 2-Wire, 1K Serial EEPROM. Features. Description. Not Recommended for New Designs. Pin Configurations. Features 2-wire Serial Interface Schmitt Trigger, Filtered Inputs For Noise Suppression DDC1 / DDC2 Interface Compliant for Monitor Identification Low-voltage Operation 2.5 (V CC = 2.5V to 5.5V) Internally

More information

DS1676 Total Elapsed Time Recorder, Erasable

DS1676 Total Elapsed Time Recorder, Erasable www.dalsemi.com Preliminary DS1676 Total Elapsed Time Recorder, Erasable FEATURES Records the total time that the Event Input has been active and the number of events that have occurred. Volatile Elapsed

More information