79C Megabit (512k x 8-bit) EEPROM MCM FEATURES DESCRIPTION: 79C0408. Logic Diagram

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79C48 4 Megabit (512k x 8-bit) EEPROM MCM CE 1 CE 2 CE 3 CE 4 RES R/B WE OE 79C48 A -16 128K x 8 128K x 8 128K x 8 128K x 8 I/O -7 Logic Diagram FEATURES Four 128k x 8-bit EEPROMs MCM RAD-PAK

1 79C48 4 Megabit (512k x 8-bit) EEPROM MCM CE 1 CE 2 CE 3 CE 4 RES R/B WE OE 79C48 A K x 8 128K x 8 128K x 8 128K x 8 I/O -7 Logic Diagram FEATURES Four 128k x 8-bit EEPROMs MCM RAD-PAK radiation-hardened agait natural space radiation Total dose hardness: - > 1 krad (Si), depending upon space mission Excellent Single event 25 C - SEL TH > 12 MeV cm 2 /mg (Device) - SEU TH > 9 MeV cm 2 /mg (Memory Cells) - SEU TH > 18 MeV cm 2 /mg (Write Mode) - SET TH > 4 MeV cm 2 /mg (Read Mode) Package: - 4 pin RAD-PAK flat pack - 4 pin X-Ray Pak TM flat pack - 4 pin Rad-Tolerant flat pack High speed: - 12, 15, and 2 maximum access times available Data Polling and Ready/Busy signal Software data protection Write protection by RES pin High endurance - 1, erase/write (in Page Mode), - 1 year data retention Page write mode: 1 to 128 byte page Low power dissipation - 8 mw/mhz active mode - 44 µw standby mode DESCRIPTION: DDC s 79C48 multi-chip module (MCM) memory features a greater than 1 krad (Si) total dose tolerance, depending upon space mission. Using DDC's patented radiation-hardened RAD-PAK MCM packaging technology, the 79C48 is the first radiation-hardened 4 Megabit MCM EEPROM for space applicatio. The 79C48 uses four 1 Megabit high-speed CMOS die to yield a 4 Megabit product. The 79C48 is capable of in-system electrical Byte and Page programmability. It has a 128 bytes Page Programming function to make its erase and write operatio faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operatio. In the 79C48, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal. Software data protection is implemented using the JEDEC optional standard algorithm. DDC's patented RAD-PAK packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, the RAD-PAK package provides greater than 1 krad (Si) radiation dose tolerance. This product is available with screening up to DDC s self-defined Class K Rev 18 1 (631) Data Device Corporation

2 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 TABLE 1. 79C48 PIN DESCRIPTION PIN SYMBOL DESCRIPTION 16-9, 32-31, 28, 3, 8, 33, 7, 36, 6 A to A16 Address Input 17-19, I/O to I/O7 Data Input/Output 29 OE Output Enable 2, 3, 39, 38 CE1-4 Chip Enable 1 through 4 34 WE Write Enable 1, 27, 4 VCC Power Supply 4, 2, 21, 37 VSS Ground 5 RDY/BUSY Ready/Busy 35 RES Reset TABLE 2. 79C48 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN MAX UNIT Supply Voltage V CC V Input Voltage V IN V Package Weight RP 23 Grams RT 1 Thermal Resistance ( RP Package) Tjc 7.3 C/W Operating Temperature Range T OPR C Storage Temperature Range T STG C Memory 1. V IN MIN = -3.V FOR PULSE WIDTH <5NS. TABLE 3. 79C48 RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNIT Supply Voltage V CC V Input Voltage V IL V IH V CC +.3 V V RES_PIN V H V CC -.5 V CC +1 V Case Operating Temperature T C C 1. V IL min = -1.V for pulse width < Rev Data Device Corporation

3 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 TABLE 4. 79C48 CAPACITANCE 1 (T A = 25 C, f = 1 MHz) PARAMETER SYMBOL MIN MAX UNIT C Input Capacitance: V IN = V 1 pf WE CE 1-4 OE A -16 IN Output Capacitance: V OUT = V 1 C OUT 48 pf 1. Guaranteed by design. TABLE 5. DELTA PARAMETERS PARAMETER CONDITION I CC1 + 1% of value in Table 6 I CC2 + 1% of value in Table 6 I CC3 + 1% of value in Table 6 I CC4 + 1% of value in Table 6 TABLE 6. 79C48 DC ELECTRICAL CHARACTERISTICS (V CC = 5V ±1%, T A = -55 TO +125 C) Memory PARAMETER TEST CONDITION SYMBOL SUBGROUPS MIN MAX UNITS Input Leakage Current V CC = 5.5V, V IN = 5.5V 1 I IL 1, 2, 3 µa CE OE, WE 8 A Output Leakage Current V CC = 5.5V, V OUT = 5.5V/.4V I LO 1, 2, 3 8 µa Standby V CC Current CE = V CC I CC1 8 µa Operating V CC Current 2 I OUT = ma, Duty = 1%, Cycle = 1µs at V CC = 5.5V Input Voltage RES_PIN CE = V IH I CC2 4 ma I OUT = ma, Duty = 1%, Cycle = 15 at V CC = 5.5V I CC3 1, 2, 3 15 ma I CC4 1, 2, 3 5 V IL 1, 2, 3.8 V V IH 2.2 V H V CC -.5 Output Voltage 3 I OL = 2.1 ma V OL 1, 2, 3.4 V I OH = -.4 ma V OH Rev Data Device Corporation

4 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 1. I LI on RES = 1 ua max. 2. Only one CE\ Active. 3. RDY/BSY is an open drain output. Only Vol applies to this pin. TABLE 7. 79C48 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS 1 (V CC = 5V ±1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN MAX UNIT Address Access Time CE = OE = V IL, WE = V IH t ACC 9, 1, Chip Enable Access Time OE = V IL, WE = V IH t CE 9, 1, Output Enable Access Time CE = V IL, WE = V IH Output Hold to Address Change CE = OE = V IL, WE = V IH t OE 9, 1, 11 t OH 9, 1, Memory Output Disable to High-Z 2 CE = V IL, WE = V IH t DF 9, 1, CE = OE = V IL, WE = V IH t DFR 9, 1, RES to Output Delay CE = OE = V IL, WE = V IH t RR 9, 1, Test conditio: Input pulse levels -.4V to 2.4V; input rise and fall times < 2; output load - 1 TTL gate + 1pF (including scope and jig); reference levels for measuring timing -.8V/1.8V. 2. t DF and t DFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design Rev Data Device Corporation

5 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 TABLE 8. 79C48 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS (V CC = 5V ±1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN 1 MAX UNIT Address Setup Time t AS 9, 1, 11 Chip Enable to Write Setup Time (WE Controlled) Write Pulse Width CE Controlled WE Controlled Address Hold Time t CS 9, 1, 11 t CW t WP 9, 1, 11 t AH 9, 1, Memory Data Setup Time t DS 9, 1, Data Hold Time t DH 9, 1, Chip Enable Hold Time (WE Controlled) t CH 9, 1, 11 Write Enable to Write Setup Time (CE Controlled) t WS 9, 1, 11 Write Enable Hold Time (CE Controlled) t WH 9, 1, Rev Data Device Corporation

6 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 TABLE 8. 79C48 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS (V CC = 5V ±1%, T A = -55 TO +125 C) PARAMETER SYMBOL SUBGROUPS MIN 1 MAX UNIT Output Enable to Write Setup Time t OES 9, 1, 11 Output Enable Hold Time t OEH 9, 1, 11 Write Cycle Time t WC 9, 1, ms Data Latch Time Byte Load Window t DL 9, 1, 11 t BL 9, 1, µs Memory Byte Load Cycle t BLC 9, 1, µs Time to Device Busy t DB 9, 1, Write Start Time t DW 9, 1, RES to Write Setup Time t RP 9, 1, µs V CC to RES Setup Time t RES 9, 1, µs 1. Use this device in a longer cycle than this value. 2. t WC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value Rev Data Device Corporation

7 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 3. Next read or write operation can be initiated after t DW if polling techniques or RDY/BUSY are used. 4. Gauranteed by design. TABLE 9. 79C48 MODE SELECTION 1, 2 PARAMETER CE 3 OE WE I/O RES RDY/BUSY Read V IL V IL V IH D OUT V H High-Z Standby V IH X X High-Z X High-Z Write V IL V IH V IL D IN V H High-Z > V OL Deselect V IL V IH V IH High-Z V H High-Z Write Inhibit X X V IH X X V IL X X Data Polling V IL V IL V IH Data Out (I/O7) V H V OL Program X X X High-Z V IL High-Z 1. X = Don t care. 2. Refer to the recommended DC operating conditio. 3. For CE 1-4 only one CE can be used ( on ) at a time. FIGURE 1. READ TIMING WAVEFORM Memory Rev Data Device Corporation

8 Memory 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Rev Data Device Corporation

9 Memory 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Rev Data Device Corporation

10 Memory 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Rev Data Device Corporation

11 Memory 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) FIGURE 6. DATA POLLING TIMING WAVEFORM Rev Data Device Corporation

12 Memory 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE) FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE) Toggle Bit Waveform EEPROM APPLICATION NOTES This application note describes the programming procedures for each EEPROM module (four in each MCM) and details of various techniques to preserve data protection. Automatic Page Write Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A to A6). Loading the first byte of data, the data load window ope 3 µs for the second byte. In the same manner each additional byte of data can be loaded within 3 µs. In case CE and WE are kept high for 1 µs after data input, the EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM Rev Data Device Corporation

13 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 WE CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V OL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when V CC is switched. RES should be kept high during read and programming because it doesn t provide a latch function. Memory Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functio described below. 1. Data Protection agait Noise of Control Pi (CE, OE, WE) during Operation Rev Data Device Corporation

14 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 During readout or standby, noise on the control pi may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 2 or less in programming mode. Be careful not to allow noise of a width of more than 2 on the control pi. 2. Data Protection at V CC on/off When V CC is turned on or off, noise on the control pi generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during V CC on/off by using a CPU reset signal to RES pin. Memory RES should be kept at V SS level when V CC is turned on or off. The EEPROM breaks off programming operation when RES becomes low, programming operation doesn t finish correctly in case that RES falls low during programming operation. RES should be kept high for 1 ms after the last data input. 1mS min 3. Software Data Protection The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode Rev Data Device Corporation

15 Memory 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM tur to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written Rev Data Device Corporation

16 Memory 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 4 PIN RAD-PAK PACKAGE DIMENSIONS SYMBOL DIMENSION MIN NOM MAX A b c D E E E E3..5 e.4 BSC L Q S N 4 Note: All dimeio in inches Top and Bottom of package tied internally to ground Rev Data Device Corporation

17 Memory 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 4 LDFP 4 PIN X-RAY-PAK TM FLAT PACKAGE DIMENSIONS SYMBOL DIMENSION MIN NOM MAX A b c D E E2.785 E3.15 e.4 BSC L Q S1.35 N 4 NOTE: All Dimeio in Inches Top and Bottom of package internally tied to ground Rev Data Device Corporation

18 Memory 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 4 PIN RAD-TOLERANT FLAT PACKAGE DIMENSIONS SYMBOL DIMENSION MIN NOM MAX A b c D E E E E3..5 e.4 BSC L Q S N 4 NOTE: All Dimeio in Inches Top and Bottom of package tied internally to ground Rev Data Device Corporation

19 Memory 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 Important Notice: These data sheets are created using the chip manufacturers published specificatio. DDC verifies functionality by testing key parameters either by 1% testing, sample testing or characterization. The specificatio presented within these data sheets represent the latest and most accurate information available to date. However, these specificatio are subject to change without notice and DDC assumes no respoibility for the use of this information. DDC s products are not authorized for use as critical components in life support devices or systems without express written approval from DDC. Any claim agait DDC must be made within 9 days from the date of shipment from DDC. DDC s liability shall be limited to replacement of defective parts Rev Data Device Corporation

20 4 Megabit (512k x 8-bit) EEPROM MCM 79C48 Product Ordering Optio Model Number Features Option Details 79C48 XX F X -XX Access Time 12 = = 15 2 = 2 Screening Flow Package Multi Chip Module (MCM 1 ) K = DDC Self-Defined Class K H = DDC Self-Defined Class H I = Industrial(Testing at -55C, +25C, +125C) E = Engineering (Tested at +25C) F = Flat Pack Memory Radiation Features 2 RP = Rad-Pak Package RT = No Radiation Guarentee (Class E and I Only) RT1 = 1 krad (Read/Write) RT2 = 25 krad (Read/Write) RT4 = 4 krad (Read/Write) RT6 = 6 krad (Read/Write) RT4R = 4 krad (Read); 25 krad (Write) RT6R = 6 krad (Read); 25 krad (Write) XP = Xray Pack Base Product Nomenclature 4 Megabit (512 x 8bit) EEPROM 1) Products are manufactured and screened to DDC self-defined Class H and Class K flows. 2) The device will meet the specified read mode TID level, at the die level, if it is not written to during irradiation. Writing to the device during irradiation will reduce the device s TID tolerance to the specified write mode TID level. Writing to the device before irradiation does not alter the device s read mode TID level Rev Data Device Corporation

28LV Megabit (128K x 8-Bit) EEPROM. Memory DESCRIPTION: FEATURES: 28LV011. Logic Diagram

28LV Megabit (128K x 8-Bit) EEPROM. Memory DESCRIPTION: FEATURES: 28LV011. Logic Diagram 28LV11 1 Megabit (128K x 8-Bit) EEPROM V CC V SS High Voltage Generator I/O I/O7 RDY/Busy RES OE I/O Buffer and Input Latch CE WE Control Logic Timing RES 28LV11 A A6 Y Decoder Y Gating A7 Address Buffer