ACT S512K32 High Speed 16 Megabit SRAM Multichip Module

Size: px
Start display at page:

Download "ACT S512K32 High Speed 16 Megabit SRAM Multichip Module"

Transcription

1 ACT S512K32 High Speed 16 Megabit SRAM Multichip Module Features 4 Low Power CMOS 512K x 8 SRAMs in one MCM Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 Input and Output TTL & CMOS Compatible Design Fast 17,20,25,35,45,55ns Access Times Full Commercial, Industrial and Military (-55 C to +125 C) Temperature Range MIL-PRF Compliant MCMs Available +5 V Power Supply Available in two Surface Mount Packages, and two PGA Type Package 68 Lead, Low Profile CQFP(F1), 1.56"SQ x.140"max 68 Lead, Dual-Cavity CQFP(F2), 0.88"SQ x.20"max (.18 max thickness available, contact factory for details) (Drops into the 68 Lead JEDEC.99"SQ CQFJ footprint) 68 Lead, Single-Cavity CQFP (F18),.94"SQ x.140"max (Drops into the 68 Lead JEDEC.99"SQ CQFJ footprint) 66 Pin, 1.38" x 1.38" x.245" PGA Type, Aeroflex code# "P1" 66 Pin, 1.09" x 1.09" x.185" PGA Type, With Shoulder, Aeroflex code# "P7" Internal Decoupling Capacitors DESC SMD# Released (F1,F2,F18,P1,P7) Block Diagram PGA Type Package (P1,P7) & CQFP (F2,F18) A0 A18 OE WE1 CE1 WE2 CE2 WE3 CE3 WE4 512Kx8 512Kx8 512Kx8 512Kx CE4 I/O0-7 I/O8-15 I/O16-23 I/O24-31 Pin Description I/O0-31 Data I/O A0 18 Address Inputs WE1 4 Write Enables CE1 4 Chip Enables OE Output Enable Vcc Power Supply GND Ground NC Not Connected CIRCUIT TECHNOLOGY General Description The ACT S512K32 is a High Speed, 16 megabit CMOS SRAM Multichip Module (MCM) designed for full temperature range industrial, military, or space, mass memory and fast cache applications. The MCM can be organized as a 512K x 32 bit, 1M x 16 bit or 2M x 8 bit device and is input and output TTL compatible. Writing is executed when the write enable (WE) and chip enable (CE) inputs are low and output enable (OE) input is high. Reading is accomplished when WE is high and CE and OE are both low. Access time grades of 17ns, 20ns, 25ns, 35ns, 45ns and 55ns maximum are standard high speed versions. The +5 Volt power supply version is standard and +3.3 Volt lower power model is a future optional product. Block Diagram CQFP(F1) WE OE A0 A18 CE1 CE2 CE3 512Kx8 512Kx8 512Kx8 512Kx CE4 I/O0-7 I/O8-15 I/O16-23 I/O24-31 Pin Description I/O0-31 Data I/O A0 18 Address Inputs WE Write Enable CE1 4 Chip Enables OE Output Enable Vcc Power Supply GND Ground NC Not Connected The products are designed for operation over the temperature range of -55 C to +125 C and under the full military environment. DESC Standard Military Drawing (SMD) numbers are released. The ACT-S512K32 is manufactured in Aeroflex s 80,000 square foot MIL-PRF certified facility in Plainview, N.Y. eroflex Circuit Technology - Advanced Multichip Modules SCD1660 REV D 5/21/01

2 Absolute Maximum Ratings Symbol Rating Range Units Tc Operating Temperature -55 to +125 C T STG Storage Temperature -65 to +150 C P D Maximum Package Power Dissipation 3.0 W Ø J-C Hottest Die, Max Thermal Resistance - Junction to Case 5 C/W V G Maximum Signal Voltage to Ground -0.5 to +7 V T L Maximum Lead Temperature (10 seconds) 300 C Normal Operating Conditions Symbol Parameter Minimum Maximum Units V CC Power Supply Voltage V V IH Input High Voltage +2.2 V CC V V IL Input Low Voltage V Capacitance (V IN = 0V, f = 1MHz, Tc = 25 C) Symbol Parameter Maximum Units CAD A0 A18 Capacitance 50 pf COE OE Capacitance 50 pf CWE CQFP (F1) Package 50 pf PGA (P1 & P7) and CQFP (F2 & F18) Packages 20 pf CCE Chip Enable Capacitance 20 pf CI/O I/O0 I/O31 Capacitance 20 pf This parameter is guaranteed by design but not tested DC Characteristics (VCC = 5.0V, VSS = 0V, Tc = -55 C to +125 C, unless otherwise indicated) Parameter Sym Conditions ALL Speeds Units Input Leakage Current I LI V CC = +5.5V, V IN =0orV CC - 10 µa Output Leakage Current I LO CE = V IH, OE = V IH, V OUT =0toV CC - 10 µa Operating Supply Current 32 Bit Mode Standby Current Operating Supply Current 32 Bit Mode I CC1 x32 CE = V IL, OE = V IH, V CC = +5.5V f = 5 MHz CMOS Compatible I SB1 CE = V CC, OE = V IH, V CC = +5.5V f = 5 MHz CMOS Compatible I CC2 x32 CE = V IL, OE = V IH, V CC = +5.5V f = 50 MHz CMOS Compatible ma - 80 ma ma Standby Current CE = V I CC, OE = V IH, V CC = +5.5V SB2 f = 50 MHz CMOS Compatible ma Output Low Voltage V OL I OL = 8 ma, V CC = +4.5V V Output High Voltage V OH I OH = -4.0 ma, V CC = +4.5V V 2

3 Read Cycle AC Characteristics (VCC = 5.0V, VSS = 0V, Tc = -55 C to +125 C) Parameter Sym Units Read Cycle Time t RC ns Address Access Time t AA ns Chip Enable Access Time t ACE ns Output Hold from Address Change t OH ns Output Enable to Output Valid t OE ns Chip Enable to Output in Low Z * t CLZ ns Output Enable to Output in Low Z * t OLZ ns Chip Deselect to Output in High Z * t CHZ ns Output Disable to Output in High Z * t OHZ ns * Parameters guaranteed by design but not tested Write Cycle Parameter Sym Units Write Cycle Time t WC ns Chip Enable to End of Write t CW ns Address Valid to End of Write t AW ns Data Valid to End of Write t DW ns Write Pulse Width t WP ns Address Setup Time t AS ns Output Active from End of Write * t OW ns Write to Output in High Z * t WHZ ns Data Hold from Write Time t DH ns Address Hold Time t AH ns * Parameters guaranteed by design but not tested Data Retention Electrical Characteristics (Special Order Only) (Tc = -55 C to +125 C) Parameter Sym Test Conditions All Speeds Min Max Units V CC for Data Retention V DR CE V CC 0.2V V Data Retention Current I CCDR1 V CC = 3V - 28 ma Truth Table Mode CE OE WE Data I/O Power Standby H X X High Z Standby (deselect/power down) Read L L H Data Out Active Output Disable L H H High Z Active (deselected) Write L X L Data In Active 3

4 Timing Diagrams Read Cycle Timing Diagrams Read Cycle 1 (CE = OE = VIL, WE = VIH) trc Write Cycle Timing Diagrams Write Cycle 1 (WE Controlled, OE = VIL) twc A0-18 A0-16 DI/O toh Previous Data Valid taa Data Valid CE taw tcw tah WE tas twhz twp tdw Data Valid tow DI/O tdh Read Cycle 2 (WE = VIH) trc Write Cycle 2 (CE Controlled, OE = VIH ) A0-18 twc CE OE taa tacs tclz toe tchz tohz A0-18 CE tas taw WE tcw twp tah DI/O tolz High Z Data Valid DI/O tdw Data Valid tdh UNDEFINED DON T CARE Note: Guaranteed by design, but not tested. AC Test Circuit Current Source IOL Parameter Typical Units Input Pulse Level V To Device Under Test CL = 50 pf VZ ~ 1.5 V (Bipolar Supply) Input Rise and Fall 5 ns Input and Output Timing Reference Level 1.5 V IOH Current Source Notes: 1) VZ is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 ma. 3) Tester Impedance ZO =75Ω. 4) VZ is typically the midpoint of VOH and VOL. 5) IOL and IOH are adjusted to simulate a typical resistance load circuit. 6) ATE Tester includes jig capacitance. 4

5 Pin Numbers & Functions 66 Pins PGA-Type Pin # Function Pin # Function Pin # Function Pin # Function 1 I/O8 18 A12 35 I/O25 52 WE3 2 I/O9 19 Vcc 36 I/O26 53 CE3 3 I/O10 20 CE1 37 A6 54 GND 4 A13 21 NC 38 A7 55 I/O19 5 A14 22 I/O3 39 NC 56 I/O31 6 A15 23 I/O15 40 A8 57 I/O30 7 A16 24 I/O14 41 A9 58 I/O29 8 A17 25 I/O13 42 I/O16 59 I/O28 9 I/O0 26 I/O12 43 I/O17 60 A0 10 I/O1 27 OE 44 I/O18 61 A1 11 I/O2 28 A18 45 VCC 62 A2 12 WE2 29 WE1 46 CE4 63 I/O23 13 CE2 30 I/O7 47 WE4 64 I/O22 14 GND 31 I/O6 48 I/O27 65 I/O21 15 I/O11 32 I/O5 49 A3 66 I/O20 16 A10 33 I/O4 50 A4 17 A11 34 I/O24 51 A5 Package Outline PGA-Type "P1" Package Outline PGA-Type "P7 Side View (P1) DIA Pin 56 Bottom View (P1) SQ Pin 1 Side View (P7) Pin DIA Bottom View (P7) SQ Pin 1 Limited Availability.100 Use ''P7'' package for new designs MIN Pin Pin MIN Pin Pin 11 All dimensions in inches 5

6 Pin Numbers & Functions 68 Pins CQFP Pin # Function Pin # Function Pin # Function Pin # Function 1 GND 18 GND 35 OE 52 GND 2 CE1 19 I/O8 36 CE4 53 I/O23 3 A5 20 I/O9 37 A17 54 I/O22 4 A4 21 I/O10 38 A18 55 I/O21 5 A3 22 I/O11 39 NC 56 I/O20 6 A2 23 I/O12 40 NC 57 I/O19 7 A1 24 I/O13 41 NC 58 I/O18 8 A0 25 I/O14 42 NC 59 I/O17 9 NC 26 I/O15 43 NC 60 I/O16 10 I/O0 27 VCC 44 I/O31 61 VCC 11 I/O1 28 A11 45 I/O30 62 A10 12 I/O2 29 A12 46 I/O29 63 A9 13 I/O3 30 A13 47 I/O28 64 A8 14 I/O4 31 A14 48 I/O27 65 A7 15 I/O5 32 A15 49 I/O26 66 A6 16 I/O6 33 A16 50 I/O25 67 WE 17 I/O7 34 CE2 51 I/O24 68 CE3 Package Outline CQFP "F1" Pin REF Pin 9 Pin 61 Pin 10 Pin 60 Limited Availability Use ''F18'' package for new designs SQ 1.50 (4 Sides) Pin 26 Pin 44 Pin 27 Pin MIN (4 Sides).050 ± ± REF (16 at sides).010 ±.002 All dimensions in inches.060 REF 6

7 Pin Numbers & Functions 68 Pins Dual-Cavity CQFP Pin # Function Pin # Function Pin # Function Pin # Function 1 GND 18 GND 35 OE 52 GND 2 CE3 19 I/O8 36 CE2 53 I/O23 3 A5 20 I/O9 37 A17 54 I/O22 4 A4 21 I/O10 38 WE2 55 I/O21 5 A3 22 I/O11 39 WE3 56 I/O20 6 A2 23 I/O12 40 WE4 57 I/O19 7 A1 24 I/O13 41 A18 58 I/O18 8 A0 25 I/O14 42 NC 59 I/O17 9 NC 26 I/O15 43 NC 60 I/O16 10 I/O0 27 Vcc 44 I/O31 61 VCC 11 I/O1 28 A11 45 I/O30 62 A10 12 I/O2 29 A12 46 I/O29 63 A9 13 I/O3 30 A13 47 I/O28 64 A8 14 I/O4 31 A14 48 I/O27 65 A7 15 I/O5 32 A15 49 I/O26 66 A6 16 I/O6 33 A16 50 I/O25 67 WE1 17 I/O7 34 CE1 51 I/O24 68 CE4 Package Outline Dual-Cavity CQFP "F2" Top View Pin SQ ±.010 Pin SQ Pin 61 Limited Availability Use ''F18'' package for new designs Pin ±.002 * REF +3 / ± R REF Pin Pin ±.005 Detail A.010 ±.010 Pin REF Pin 43 See Detail A All dimensions in inches *.180 available, call factory for details 7

8 Pin Numbers & Functions 68 Pins Single-Cavity CQFP Pin # Function Pin # Function Pin # Function Pin # Function 1 GND 18 GND 35 OE 52 GND 2 CE3 19 I/O8 36 CE2 53 I/O23 3 A5 20 I/O9 37 A17 54 I/O22 4 A4 21 I/O10 38 WE2 55 I/O21 5 A3 22 I/O11 39 WE3 56 I/O20 6 A2 23 I/O12 40 WE4 57 I/O19 7 A1 24 I/O13 41 A18 58 I/O18 8 A0 25 I/O14 42 NC 59 I/O17 9 NC 26 I/O15 43 NC 60 I/O16 10 I/O0 27 Vcc 44 I/O31 61 VCC 11 I/O1 28 A11 45 I/O30 62 A10 12 I/O2 29 A12 46 I/O29 63 A9 13 I/O3 30 A13 47 I/O28 64 A8 14 I/O4 31 A14 48 I/O27 65 A7 15 I/O5 32 A15 49 I/O26 66 A6 16 I/O6 33 A16 50 I/O25 67 WE1 17 I/O7 34 CE1 51 I/O24 68 CE4 Package Outline CQFP Single Cavity "F18" Pin SQ ± SQ ±.009 Pin 1 Pin 61 Pin REF.015 ± ± MIN SQ REF Detail A Pin 26 Pin NOM Pin 44 Pin 43 All dimensions in inches See Detail A 8

9 CIRCUIT TECHNOLOGY Ordering Information Model Number DESC Part Number Speed Package ACT S512K32N 017F1Q HYC 17ns 1.56"sq CQFP ACT S512K32N 020F1Q HYC 20ns 1.56"sq CQFP ACT S512K32N 025F1Q HYC 25ns 1.56"sq CQFP ACT S512K32N 034F1Q HYC 35ns 1.56"sq CQFP ACT S512K32N 045F1Q HYC 45ns 1.56"sq CQFP ACT S512K32N 055F1Q HYC 55ns 1.56"sq CQFP ACT S512K32N 017F2Q HMC 17ns.88"sq CQFP ACT S512K32N 020F2Q HMC 20ns.88"sq CQFP ACT S512K32N 025F2Q HMC 25ns.88"sq CQFP ACT S512K32N 035F2Q HMC 35ns.88"sq CQFP ACT S512K32N 045F2Q HMC 45ns.88"sq CQFP ACT S512K32N 055F2Q HMC 55ns.88"sq CQFP ACT S512K32N 017F18Q H9C 17ns.94"sq CQFP ACT S512K32N 020F18Q H9C 20ns.94"sq CQFP ACT S512K32N 025F18Q H9C 25ns.94"sq CQFP ACT S512K32N 035F18Q H9C 35ns.94"sq CQFP ACT S512K32N 045F18Q H9C 45ns.94"sq CQFP ACT S512K32N 055F18Q H9C 55ns.94"sq CQFP ACT S512K32N 017P1Q HXC 17ns 1.38"sq PGA-Type ACT S512K32N 020P1Q HXC 20ns 1.38"sq PGA-Type ACT S512K32N 025P1Q HXC 25ns 1.38"sq PGA-Type ACT S512K32N 035P1Q HXC 35ns 1.38"sq PGA-Type ACT S512K32N 045P1Q HXC 45ns 1.38"sq PGA-Type ACT S512K32N 055P1Q HXC 55ns 1.38"sq PGA-Type ACT S512K32N 017P7Q HTC 17ns 1.09"sq PGA-Type ACT S512K32N 020P7Q HTC 20ns 1.09"sq PGA-Type ACT S512K32N 025P7Q HTC 25ns 1.09"sq PGA-Type ACT S512K32N 035P7Q HTC 35ns 1.09"sq PGA-Type ACT S512K32N 045P7Q HTC 45ns 1.09"sq PGA-Type ACT S512K32N 055P7Q HTC 55ns 1.09"sq PGA-Type Aeroflex Circuit Technology Memory Type S = SRAM Memory Depth, Locations Memory Width, Bits Pinout Options N = None Memory Speed, ns Specification subject to change without notice Aeroflex Circuit Technology 35 South Service Road Plainview New York Model Number Breakdown ACT S 512K 32 N 020 F18 Q Screening C = Commercial Temp, 0 C to +70 C I = Industrial Temp, -40 C to +85 C T = Military Temp, -55 C to +125 C M = Military Temp, -55 C to +125 C, Screened * Q = MIL-PRF Compliant/SMD * Screened to the individual test methods of MIL-STD-883 Package Type & Size Surface Mount Packages Thru-Hole Packages F1 = 1.56"SQ 68 Pin CQFP P1 = 1.385"SQ PGA 66 Pins F2 =.88"SQ 68 Pin Dual-Cavity CQFP P7 = 1.085"SQ PGA 66 Pins F18 =.94"SQ 68 Leads CQFP Single-Cavity Low Profile Telephone: (516) FAX: (516) Toll Free Inquiries: 1-(800)

ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module

ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module CT-S128K32 High Speed 4 Megabit SRM Multichip Module Features 4 Low Power CMOS 128K x 8 SRMs in one MCM Overall configuration as 128K x 32 Input and Output TTL Compatible 17, 20, 25, 35, 45 & 55ns ccess

More information

White Electronic Designs

White Electronic Designs 12Kx32 EEPROM MODULE, SMD 5962-9455 FEATURES Access Times of 120**, 140, 150, 200, 250, 300ns Packaging: 66-pin, PGA Type, 27.3mm (1.075") square, Hermetic Ceramic HIP (Package 400) 6 lead, 22.4mm sq.

More information

LP621024E-I Series 128K X 8 BIT CMOS SRAM. Document Title 128K X 8 BIT CMOS SRAM. Revision History. AMIC Technology, Corp.

LP621024E-I Series 128K X 8 BIT CMOS SRAM. Document Title 128K X 8 BIT CMOS SRAM. Revision History. AMIC Technology, Corp. 128K X 8 BIT CMOS SRAM Document Title 128K X 8 BIT CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue January 14, 2008 Preliminary 1.0 Final version release September 21, 2010

More information

OPTIONS. Low Power Data Retention Mode. PIN ASSIGNMENT (Top View) I/O 16 I/O 17 I/O 18 I/O 19 I/O17 I/O18 I/O19. Vss I/O20 I/O21 I/O22 I/O23

OPTIONS. Low Power Data Retention Mode. PIN ASSIGNMENT (Top View) I/O 16 I/O 17 I/O 18 I/O 19 I/O17 I/O18 I/O19. Vss I/O20 I/O21 I/O22 I/O23 512K x 32 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-94611 & 5962-95624 (Military Pinout) MIL-STD-883 FEATURES Operation with single 5V supply Vastly improved Icc Specs High speed:

More information

AS6C K X 8 BIT LOW POWER CMOS SRAM

AS6C K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Description Issue Date Rev. 1.0 Rev. 1.1 Initial Issue Add package 48-ball 8mm 10mm TFBGA Revised ORDERING INFORMATION in page 11 Jan.09.2012 July.12.2013 0 FEATURES Fast access

More information

128Kx8 CMOS MONOLITHIC EEPROM SMD

128Kx8 CMOS MONOLITHIC EEPROM SMD 128Kx8 CMOS MONOLITHIC EEPROM SMD 5962-96796 WME128K8-XXX FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns JEDEC Approved Packages 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300) 32 lead,

More information

HM628128BI Series. 131,072-word 8-bit High speed CMOS Static RAM

HM628128BI Series. 131,072-word 8-bit High speed CMOS Static RAM 131,072-word 8-bit High speed CMOS Static RAM ADE-203-363A(Z) Rev. 1.0 Apr. 28, 1995 The Hitachi HM628128BI is a CMOS static RAM organized 131,072-word 8-bit. It realizes higher density, higher performance

More information

512K x 8 4Mb Asynchronous SRAM

512K x 8 4Mb Asynchronous SRAM SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp 512K x 8 4Mb Asynchronous SRAM GS74108ATP/J/X 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 8, 10, 12 ns CMOS low power operation:

More information

16Mbit, 512KX32 CMOS S-RAM MODULE

16Mbit, 512KX32 CMOS S-RAM MODULE 16Mbit, 512KX32 CMOS S-RAM MODULE Features Access Times: 17 and 20ns Package Options: 66-Pin Ceramic PGA 1.080" SQ 66-Pin Ceramic PGA 1.173" SQ 68-Lead Ceramic QFP 0.88" SQ Fit & Function JEDEC 68-CQFJ

More information

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout CMOS Static RAM 1 Meg (K x -Bit) Revolutionary Pinout IDT714 Features K x advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/gnd) for reduced noise Equal access and cycle times

More information

8K X 8 BIT LOW POWER CMOS SRAM

8K X 8 BIT LOW POWER CMOS SRAM February 2007 FEATURES Access time :55ns Low power consumption: Operation current : 15mA (TYP.), VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible

More information

64K x 16 1Mb Asynchronous SRAM

64K x 16 1Mb Asynchronous SRAM TSOP, FP-BGA Commercial Temp Industrial Temp 64K x 16 1Mb Asynchronous SRAM GS71116AGP/U 7, 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 7, 8, 10, 12 ns CMOS low power operation:

More information

16Mbit, 512KX32 CMOS S-RAM MODULE

16Mbit, 512KX32 CMOS S-RAM MODULE 16Mbit, 512KX32 CMOS S-RAM MODULE Features Access Times: 25, 35 and 45ns Package Options: 66-Pin Ceramic PGA 1.385" SQ 66-Pin Ceramic PGA 1.173" SQ 68-Lead Ceramic QFP 0.88" SQ Fit & Function JEDEC 68-CQFP

More information

AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY. Feb

AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY. Feb REVISION HISTORY Revision Description Issue Date 1.0 Initial issue Feb 2007 2.0 Add-in industrial temperature option for 28-pin 600 July 2017 mil PDIP. Standby current(isb1) reduced to be 20uA for I-grade

More information

256K x 16 4Mb Asynchronous SRAM

256K x 16 4Mb Asynchronous SRAM FP-BGA Commercial Temp Industrial Temp 256K x 16 4Mb Asynchronous SRAM GS74117AX 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 8, 10, 12 ns CMOS low power operation: 130/105/95

More information

IDT71016S/NS. CMOS Static RAM 1 Meg (64K x 16-Bit)

IDT71016S/NS. CMOS Static RAM 1 Meg (64K x 16-Bit) CMOS Static RAM 1 Meg (4K x 1-Bit) IDT711S/NS Features 4K x 1 advanced high-speed CMOS Static RAM Equal access and cycle times Commercial and Industrial: //2 One Chip Select plus one Output Enable pin

More information

IDT71V124SA/HSA. 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

IDT71V124SA/HSA. 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout 33V CMOS Static RAM 1 Meg (K x -Bit) Center Power & Ground Pinout IDT71VSA/HSA Features K x advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/gnd) for reduced noise Equal access

More information

S-2812A/2817A. Rev.1.1. CMOS 16K-bit PARALLEL E 2 PROM

S-2812A/2817A. Rev.1.1. CMOS 16K-bit PARALLEL E 2 PROM Rev.1.1 CMOS 16K-bit PARALLEL E 2 PROM The S-2812A and the S-2817A are low power 2K 8-bit parallel E 2 PROMs. The S-2812A features wide operating voltage range, and the S-2817A features 5-V single power

More information

Rev. No. History Issue Date Remark

Rev. No. History Issue Date Remark 128K X 8 BIT LOW VOLTAGE CMOS SRAM ocument Title 128K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue ate Remark 0.0 Initial issue February 19, 2002 Preliminary 0.1 Add 32L Pb-Free

More information

LP62S16256G-I Series. Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM. Revision History. Rev. No. History Issue Date Remark

LP62S16256G-I Series. Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM. Revision History. Rev. No. History Issue Date Remark Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM ocument Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue ate Remark 0.0 Initial issue June 2, 2006 Preliminary PRELIMINARY

More information

3.3V CMOS Static RAM for Automotive Applications 4 Meg (256K x 16-Bit)

3.3V CMOS Static RAM for Automotive Applications 4 Meg (256K x 16-Bit) .V CMOS Static RAM for Automotive Applicatio Meg (25K x -Bit) IDTVYS IDTVYL Features 25K x advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise. Equal access and cycle

More information

MOS INTEGRATED CIRCUIT

MOS INTEGRATED CIRCUIT DATA SHEET 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT MOS INTEGRATED CIRCUIT µpd43256b Description The µpd43256b is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM. Battery

More information

Rev. No. History Issue Date Remark

Rev. No. History Issue Date Remark Preliminary 512K X 8 OTP CMOS EPROM Document Title 512K X 8 OTP CMOS EPROM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 17, 1998 Preliminary 1.0 Change CE from VIL to VIH

More information

P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM

P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM HIGH SPEED 3K x 8 3.3 STATIC CMOS RAM FEATURES 3.3 Power Supply High Speed (Equal Access and Cycle Times) 1///5 (Commercial) //5 (Industrial) Low Power Single 3.3 olts ±.3olts Power Supply Easy Memory

More information

White Electronic Designs

White Electronic Designs White Electronic Desig 512Kx8 STATIC RAM CMOS, MODULE FEATURES 512Kx8 bit CMOS Static Random Access Memory Access Times 2 through 1 Data Retention Function (EDI8F8512LP) TTL Compatible Inputs and Outputs

More information

CAT22C Bit Nonvolatile CMOS Static RAM

CAT22C Bit Nonvolatile CMOS Static RAM 256-Bit Nonvolatile CMOS Static RAM FEATURES Single 5V Supply Fast RAM Access Times: 200ns 300ns Infinite E 2 PROM to RAM Recall CMOS and TTL Compatible I/O Power Up/Down Protection 100,000 Program/Erase

More information

512Kx8 Monolithic SRAM, SMD

512Kx8 Monolithic SRAM, SMD 512Kx Monolithic SRAM, SMD 5962-956 FEATURES Access Times of,, 2,, 35, 45, 55 Data Retention Function (LPA version) TTL Compatible Inputs and Outputs Fully Static, No Clocks Organized as 512Kx Commercial,

More information

CMOS SRAM. K6T4008C1B Family. Document Title. Revision History. 512Kx8 bit Low Power CMOS Static RAM. Revision No. History. Remark. Draft Date 0.

CMOS SRAM. K6T4008C1B Family. Document Title. Revision History. 512Kx8 bit Low Power CMOS Static RAM. Revision No. History. Remark. Draft Date 0. Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle

More information

AT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations

AT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations Features Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor

More information

HT CMOS 2K 8-Bit SRAM

HT CMOS 2K 8-Bit SRAM CMOS 2K 8-Bit SRAM Features Single 5V power supply Low power consumption Operating: 400mW (Typ.) Standby: 5µW (Typ.) 70ns (Max.) high speed access time Power down by pin CS TTL compatible interface levels

More information

MOS INTEGRATED CIRCUIT

MOS INTEGRATED CIRCUIT DATA SHEET 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT MOS INTEGRATED CIRCUIT μpd43256b Description The μpd43256b is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM. Battery

More information

16Mb(1M x 16 bit) Low Power SRAM

16Mb(1M x 16 bit) Low Power SRAM 16Mb(1M x 16 bit) Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING

More information

Low Power Pseudo SRAM

Low Power Pseudo SRAM Revision History Rev. No. History Issue Date 1.0 1. New Release. 2. Product Process change from 90nm to 65nm 3. The device build in Power Saving mode as below : 3-1. Deep Power Down (DPD) 3-2. Partial

More information

CAT28C17A 16K-Bit CMOS PARALLEL EEPROM

CAT28C17A 16K-Bit CMOS PARALLEL EEPROM 16K-Bit CMOS PARALLEL EEPROM HALOGENFREE LEAD TM FREE FEATURES Fast Read Access Times: 200 ns Low Power CMOS Dissipation: Active: 25 ma Max. Standby: 100 µa Max. Simple Write Operation: On-Chip Address

More information

ICE27C Megabit(128KX8) OTP EPROM

ICE27C Megabit(128KX8) OTP EPROM 1- Megabit(128KX8) OTP EPROM Description The is a low-power, high-performance 1M(1,048,576) bit one-time programmable read only memory (OTP EPROM) organized as 128K by 8 bits. It is single 5V power supply

More information

DS1225Y 64k Nonvolatile SRAM

DS1225Y 64k Nonvolatile SRAM 19-5603; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS 64k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during

More information

AS7C34098A-8TIN 256K X 16 BIT HIGH SPEED CMOS SRAM

AS7C34098A-8TIN 256K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Jul.12.2012 Rev. 1.1 V CC - 0.2V revised as 0.2V for TEST CONDITION Jul.19.2012 of Average Operating Power supply Current Icc1 on

More information

4Mbit, 512KX8 5V Flash Memory (Monolithic)

4Mbit, 512KX8 5V Flash Memory (Monolithic) 4Mbit, 512KX8 5V Flash Memory (Monolithic) Features 5V Programming, 5V±10% Supply TTL Compatible Inputs and CMOS Outputs Access Times: 90, 120 and 150ns Low Vcc Write Inhibit 3.2v 8 Equal Size Sectors

More information

64Mbit, 2MX32 3V Flash Memory Module

64Mbit, 2MX32 3V Flash Memory Module 64Mbit, 2MX32 3V Flash Memory Module Features 3.0V ± 10% read and write operation 1,000,000 Block Erase Cycles Access Times: 70,90,120 &150ns 4X(32 Equal Sectors of 64-Kbyte Each) Package Options: Individual

More information

32-megabit DataFlash + 4-megabit SRAM Stack Memory AT45BR3214B

32-megabit DataFlash + 4-megabit SRAM Stack Memory AT45BR3214B Features 32-Mbit DataFlash and 4-Mbit SRAM Single 62-ball (8 mm x 12 mm x 1.2 mm) CBGA Package 2.7V to 3.3V Operating Voltage DataFlash Single 2.7V to 3.3V Supply Serial Peripheral Interface (SPI) Compatible

More information

ESMT M24L416256SA. 4-Mbit (256K x 16) Pseudo Static RAM. Features. Functional Description. Logic Block Diagram

ESMT M24L416256SA. 4-Mbit (256K x 16) Pseudo Static RAM. Features. Functional Description. Logic Block Diagram PSRAM 4-Mbit (256K x 16) Pseudo Static RAM Features Wide voltage range: 2.7V 3.6V Access time: 55 ns, 60 ns and 70 ns Ultra-low active power Typical active current: 1 ma @ f = 1 MHz Typical active current:

More information

1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs AT28LV010

1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs AT28LV010 BDTIC www.bdtic.com/atmel Features Single 3.3V ± 10% Supply Fast Read Access Time 200 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write

More information

AT28C K (32K x 8) Paged CMOS E 2 PROM. Features. Description. Pin Configurations

AT28C K (32K x 8) Paged CMOS E 2 PROM. Features. Description. Pin Configurations AT28C256 Features Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms

More information

4Mb Async. FAST SRAM Specification

4Mb Async. FAST SRAM Specification S6R4008V1M, S6R4016V1M, S6R4008C1M S6R4016C1M 4Mb Async. FAST SRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO NETSOL PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING

More information

4Mb Async. FAST SRAM A-die Specification

4Mb Async. FAST SRAM A-die Specification S6R4008V1A, S6R4016V1A, S6R4008C1A, S6R4016C1A, S6R4008W1A S6R4016W1A 4Mb Async. FAST SRAM A-die Specification NETSOL RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

More information

MOS INTEGRATED CIRCUIT

MOS INTEGRATED CIRCUIT DATA SHEET 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION MOS INTEGRATED CIRCUIT µpd444012a-x Description The µpd444012a-x is a high speed, low power, 4,194,304 bits (262,144

More information

FEATURES. Single Power Supply Operation - Low voltage range: 2.70 V V

FEATURES. Single Power Supply Operation - Low voltage range: 2.70 V V FEATURES Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V - IS39LV040: 512K x 8 (4 Mbit) - IS39LV010: 128K x 8 (1 Mbit) - IS39LV512: 64K x 8 (512 Kbit) - 70 ns access time - Uniform 4

More information

CAT28C K-Bit Parallel EEPROM

CAT28C K-Bit Parallel EEPROM 256K-Bit Parallel EEPROM HALOGENFREE LEAD TM FREE FEATURES Fast read access times: 120/150ns Low power CMOS dissipation: Active: 25 ma max Standby: 150 µa max Simple write operation: On-chip address and

More information

White Electronic Designs

White Electronic Designs 256Kx32 Static RM CMOS, High Speed Module FETURES 256Kx32 bit CMOS Static Random ccess Memory ccess Times: 12, 15, 20, and 25ns Individual Byte Selects Fully Static, No Clocks TTL Compatible I/O High Density

More information

2-Megabit (256K x 8) 5-volt Only CMOS Flash Memory AT29C020. Features. Description. Pin Configurations

2-Megabit (256K x 8) 5-volt Only CMOS Flash Memory AT29C020. Features. Description. Pin Configurations Features Fast Read Access Time - 90 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (256 bytes/sector) Internal Address and Data Latches for

More information

SST 29EE V-only 1 Megabit Page Mode EEPROM

SST 29EE V-only 1 Megabit Page Mode EEPROM Data Sheet SST 29EE010 July 1996 5.1 Features: Single 5.0-Volt Read and Write Operations CMOS SuperFlash EEPROM Technology Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low

More information

DS1265Y/AB 8M Nonvolatile SRAM

DS1265Y/AB 8M Nonvolatile SRAM 19-5616; Rev 11/10 www.maxim-ic.com 8M Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

More information

64K x 32 Static RAM Module

64K x 32 Static RAM Module 31 CYM1831 Features High-density 2-Mbit SRAM module 32-bit standard footprint supports densities from 16K x 32 through 1M x 32 High-speed CMOS SRAMs Access time of 15 ns Low active power 5.3W (max.) SMD

More information

ACT F128K8 High Speed 1 Megabit Monolithic FLASH

ACT F128K8 High Speed 1 Megabit Monolithic FLASH ACT F128K8 High Speed 1 Megabit Monolithic FLASH Features Low Power Monolithic 128K x 8 FLASH TTL Compatible Inputs and CMOS Outputs Access Times of 60, 70, 90, 120 and 150ns +5V Programing, +5V Supply

More information

1-Megabit (128K x 8) 5-volt Only Flash Memory AT29C010A. Features. Description. Pin Configurations

1-Megabit (128K x 8) 5-volt Only Flash Memory AT29C010A. Features. Description. Pin Configurations Features Fast Read Access Time - 70 ns 5-Volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector) Internal Address and Data Latches for

More information

512KX8 CMOS S-RAM (Monolithic)

512KX8 CMOS S-RAM (Monolithic) 512KX8 CMOS S-RAM (Monolithic) Features Access Times: 55, 70, 85 and 100ns Package Option: 32-Pin Ceramic DIP, JEDEC Approved Pinout 36-Lead Ceramic SOJ JEDEC Approved Revolutionary Pinout 32-Lead Ceramic

More information

DS1249Y/AB 2048k Nonvolatile SRAM

DS1249Y/AB 2048k Nonvolatile SRAM 19-5631; Rev 11/10 www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

More information

2Mb Ultra-Low Power Asynchronous CMOS SRAM. Features. Power Supply (Vcc)

2Mb Ultra-Low Power Asynchronous CMOS SRAM. Features. Power Supply (Vcc) 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Features Overview The is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device

More information

A23W8308. Document Title 262,144 X 8 BIT CMOS MASK ROM. Revision History. Rev. No. History Issue Date Remark

A23W8308. Document Title 262,144 X 8 BIT CMOS MASK ROM. Revision History. Rev. No. History Issue Date Remark Preliminary 262,144 X 8 BIT CMOS MASK ROM Document Title 262,144 X 8 BIT CMOS MASK ROM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue November 11, 1999 Preliminary PRELIMINARY (November,

More information

EDI8G322048C DESCRIPTION FEATURES PIN CONFIGURATION PIN NAMES

EDI8G322048C DESCRIPTION FEATURES PIN CONFIGURATION PIN NAMES 2048K x 32 Static RM CMOS, High Speed Module FETURES n 2048K x 32 bit CMOS Static n Random ccess Memory ccess Times: 20, 25, and 35ns Individual Byte Selects Fully Static, No Clocks TTL Compatible I/O

More information

79C Megabit (512k x 8-bit) EEPROM MCM FEATURES DESCRIPTION: 79C0408. Logic Diagram

79C Megabit (512k x 8-bit) EEPROM MCM FEATURES DESCRIPTION: 79C0408. Logic Diagram 79C48 4 Megabit (512k x 8-bit) EEPROM MCM CE 1 CE 2 CE 3 CE 4 RES R/B WE OE 79C48 A -16 128K x 8 128K x 8 128K x 8 128K x 8 I/O -7 Logic Diagram FEATURES Four 128k x 8-bit EEPROMs MCM RAD-PAK radiation-hardened

More information

SST 29EE V-only 512 Kilobit Page Mode EEPROM

SST 29EE V-only 512 Kilobit Page Mode EEPROM Data Sheet SST 29EE512 June 1997 2.1 Features: Single 5.0-Volt Read and Write Operations CMOS SuperFlash EEPROM Technology Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low

More information

S-2900A. Rev.1.1. CMOS 512-bit SERIAL E 2 PROM

S-2900A. Rev.1.1. CMOS 512-bit SERIAL E 2 PROM Rev.1.1 CMOS 512-bit SERIAL E 2 PROM S-29A The S-29A is a wide operating voltage range, low power consumption 512-bit E 2 PROM. The organization is 64-word 8-bit, and can be read or written serially. It

More information

CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1,024 X 9, 2,048 X 9, 4,096 x 9 and 8,192 x 9

CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1,024 X 9, 2,048 X 9, 4,096 x 9 and 8,192 x 9 Integrated Device Technology, Inc. CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1,24 X 9, 2,48 X 9, 4,96 x 9 and 8,192 x 9 IDT72421 IDT7221 IDT72211 IDT72221 IDT72231 IDT72241 IDT72251 FEATURES: 64 x 9-bit

More information

1-megabit (64K x 16) 5-volt Only Flash Memory AT49F1024A Features Description Pin Configurations

1-megabit (64K x 16) 5-volt Only Flash Memory AT49F1024A Features Description Pin Configurations BDTIC www.bdtic.com/atmel Features Single-voltage Operation 5V Read 5V Reprogramming Fast Read Access Time 45 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time

More information

79LV Megabit (512K x 40-Bit) Low Low Voltage EEPROM MCM. Memory DESCRIPTION: FEATURES: Logic Diagram

79LV Megabit (512K x 40-Bit) Low Low Voltage EEPROM MCM. Memory DESCRIPTION: FEATURES: Logic Diagram 79LV24 2 Megabit (512K x 4-Bit) Low Low Voltage EEPROM MCM FEATURES: 512k x 4-bit EEPROM MCM RAD-PAK radiation-hardened agait natural space radiation Total dose hardness: - >1 krad (Si) - Dependent upon

More information

2-Mbit (128K x 16) Static RAM

2-Mbit (128K x 16) Static RAM 2-Mbit (128K x 16) Static RAM Features Temperature Ranges Industrial: 40 C to 85 C Automotive-A: 40 C to 85 C Automotive-E: 40 C to 125 C High speed: 55 ns Wide voltage range: 2.7V 3.6V Ultra-low active,

More information

MX27C K-BIT [32K x 8] CMOS EPROM FEATURES GENERAL DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATIONS PIN DESCRIPTION

MX27C K-BIT [32K x 8] CMOS EPROM FEATURES GENERAL DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATIONS PIN DESCRIPTION FEATURES 32K x 8 organization Single +5V power supply +125V programming voltage Fast access time: 45/55/70/90/100/120/150 ns Totally static operation Completely TTL compatible 256K-BIT [32K x 8] CMOS EPROM

More information

1 Megabit Serial Flash EEPROM SST45LF010

1 Megabit Serial Flash EEPROM SST45LF010 EEPROM FEATURES: Single.0-.V Read and Write Operations Serial Interface Architecture SPI Compatible: Mode 0 and Mode Byte Serial Read with Single Command Superior Reliability Endurance: 00,000 Cycles (typical)

More information

HM6264B Series. 64 k SRAM (8-kword 8-bit)

HM6264B Series. 64 k SRAM (8-kword 8-bit) 64 k SRAM (8-kword 8-bit) ADE-203-454B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM6264B is 64k-bit static RAM organized 8-kword 8-bit. It realizes higher performance and low power consumption by

More information

79C Megabit (512K x 40-Bit) EEPROM MCM FEATURES: DESCRIPTION: Logic Diagram. 512k x 40-bit EEPROM MCM

79C Megabit (512K x 40-Bit) EEPROM MCM FEATURES: DESCRIPTION: Logic Diagram. 512k x 40-bit EEPROM MCM 79C24 2 Megabit (512K x 4-Bit) EEPROM MCM FEATURES: 512k x 4-bit EEPROM MCM RAD-PAK radiation-hardened agait natural space radiation Total dose hardness: - >1 krad (Si) - Dependent upon orbit Excellent

More information

PYA28C K x 8 EEPROM FEATURES DESCRIPTION. Access Times of 150, 200, 250 and 350ns. Software Data Protection. Single 5V±10% Power Supply

PYA28C K x 8 EEPROM FEATURES DESCRIPTION. Access Times of 150, 200, 250 and 350ns. Software Data Protection. Single 5V±10% Power Supply PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 ma Active Current - 300 µa Standby Current Fast Write

More information

1 Mbit / 2 Mbit / 4 Mbitsn(x8) Many-Time Programmable Flash GLS37VF010 / GLS37VF020 / GLS37VF040

1 Mbit / 2 Mbit / 4 Mbitsn(x8) Many-Time Programmable Flash GLS37VF010 / GLS37VF020 / GLS37VF040 Mbit / 2 Mbit / 4 Mbitsn(x8) Many-Time Programmable Flash FEATURES: GLS37VF52 / 00 / 020 / 0402.7V-Read 52Kb / Mb / 2Mb / 4Mb (x8) MTP flash memories Organized as 28K x8 / 256K x8 / 52K x8 2.7-3.6V Read

More information

79LV2040B. 20 Megabit (512K x 40-Bit) Low Low Voltage EEPROM MCM. Memory FEATURES: DESCRIPTION: Logic Diagram

79LV2040B. 20 Megabit (512K x 40-Bit) Low Low Voltage EEPROM MCM. Memory FEATURES: DESCRIPTION: Logic Diagram 79LV24B 2 Megabit (512K x 4-Bit) Low Low Voltage EEPROM MCM FEATURES: 512k x 4-bit EEPROM MCM RAD-PAK radiation-hardened agait natural space radiation Total dose hardness: - >1 krad (Si) - Dependent upon

More information

28LV Megabit (128K x 8-Bit) EEPROM. Memory DESCRIPTION: FEATURES: 28LV011. Logic Diagram

28LV Megabit (128K x 8-Bit) EEPROM. Memory DESCRIPTION: FEATURES: 28LV011. Logic Diagram 28LV11 1 Megabit (128K x 8-Bit) EEPROM V CC V SS High Voltage Generator I/O I/O7 RDY/Busy RES OE I/O Buffer and Input Latch CE WE Control Logic Timing RES 28LV11 A A6 Y Decoder Y Gating A7 Address Buffer

More information

AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations

AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations Features Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram (Erase and Program) Internal Address and Data Latches for 64-Bytes Internal Program Control

More information

WINTEC I. DESCRIPTION: III. TIMING

WINTEC I. DESCRIPTION: III. TIMING ISIONS ZONE DESCRIPTION APPVD 1/26/01 NR I. DESCRIPTION: III. TIMING is a 8Mx64 industry standard 8-pin PC-100 DIMM Manufactured with 4 8Mx 400-mil TSOPII-54 100MHz Synchronous DRAM devices Requires 3.3V+/-0.3V

More information

4-Mbit (512K x 8) Static RAM

4-Mbit (512K x 8) Static RAM 4-Mbit (512K x 8) Static RAM Features Temperature Ranges Commercial: 0 C to 70 C Industrial: 40 C to 85 C Automotive: 40 C to 125 C High speed t AA = 10 ns Low active power 324 mw (max.) 2.0V data retention

More information

DS1220AB/AD 16k Nonvolatile SRAM

DS1220AB/AD 16k Nonvolatile SRAM DS122AB/AD 16k Nonvolatile SRAM www.dalsemi.com FEATURES years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile

More information

Product Change Notification (PCN)

Product Change Notification (PCN) Product Change Notification (PCN) Alliance Memory Inc. 511 Taylor Way, Suite 1, San Carlos, CA 94070 Main +1(650)610-6800 FAX +1(650)620-9211 Date: June 1, 2017 PCN TRACKING NO:PCN-29052017-01 Subject:

More information

4-Megabit (512K x 8) 5-volt Only CMOS Flash Memory AT49F040 AT49F040T AT49F040/040T AT49F040/040T. Features. Description. Pin Configurations

4-Megabit (512K x 8) 5-volt Only CMOS Flash Memory AT49F040 AT49F040T AT49F040/040T AT49F040/040T. Features. Description. Pin Configurations Features Single Voltage Operation 5V Read 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte By

More information

TK28F K (64K X 8) CMOS FLASH MEMORY

TK28F K (64K X 8) CMOS FLASH MEMORY TK28F512 512K (64K X 8) CMOS FLASH MEMORY September 24, 2015 (v2.0) Product Overview Features o Non-volatile Flash Memory Data retention with no voltage applied o Fast 120 ns Read access time o Flash Electrical

More information

S-2900A. Rev CMOS 512-bit SERIAL E 2 PROM

S-2900A. Rev CMOS 512-bit SERIAL E 2 PROM Rev.1.11 CMOS 512-bit SERIAL E 2 PROM S-29A The S-29A is a wide operating voltage range, low power consumption 512-bit E 2 PROM. The organization is 64-word 8-bit, and can be read or written serially.

More information

My-MS. MM27C ,072 x 8 CMOS EPROM PRELIMINARY INFORMATION ISSI IS27C010 FEATURES DESCRIPTION FUNCTIONAL BLOCK DIAGRAM

My-MS. MM27C ,072 x 8 CMOS EPROM PRELIMINARY INFORMATION ISSI IS27C010 FEATURES DESCRIPTION FUNCTIONAL BLOCK DIAGRAM IS27C010 ISSI MM27C010 131,072 x CMOS EPROM PRELIMINARY INFORMATION FEATURES Fast read access time: 90 ns JEDEC-approved pinout High-speed write programming Typically less than 16 seconds 5V ±10% power

More information

I/O 0 I/O 7 WE CE 2 OE CE 1 A17 A18

I/O 0 I/O 7 WE CE 2 OE CE 1 A17 A18 2M x 8 Static RAM Features High speed t AA = 8, 10, 12 ns Low active power 1080 mw (max.) Operating voltages of 3.3 ± 0.3V 2.0V data retention Automatic power-down when deselected TTL-compatible inputs

More information

1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs

1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs Features Single 3.3V ± 10% Supply Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle

More information

256K-Bit PARALLEL EEPROM

256K-Bit PARALLEL EEPROM 256K-Bit PARALLEL EEPROM FEATURES Fast read access times: 120/150ns Low power CMOS dissipation: Active: 25 ma max Standby: 150 µa max Simple write operation: On-chip address and data latches Self-timed

More information

128K 8 CMOS FLASH MEMORY

128K 8 CMOS FLASH MEMORY 128K 8 CMOS FLASH MEMORY GENERAL ESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K 8 bits. The device can be programmed and erased in-system with a standard 5V power

More information

AT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8)

AT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) AT24C01A/02/04/08/16 Features Low Voltage and Standard Voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 2.5 (V CC = 2.5V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 128

More information

64K-Bit CMOS PARALLEL EEPROM

64K-Bit CMOS PARALLEL EEPROM 64K-Bit CMOS PARALLEL EEPROM FEATURES Fast read access times: 90/120/150ns Low power CMOS dissipation: Active: 25 ma max. Standby: 100 µa max. Simple write operation: On-chip address and data latches Self-timed

More information

128Mbit, 4MX32 5V Flash Memory Module

128Mbit, 4MX32 5V Flash Memory Module 128Mbit, 4MX32 5V Flash Memory Module Features 5V Programming, 5V±10% Supply Access Times: 90, 120 and 150ns Package Options: 66-Pin Ceramic PGA 1.173" SQ 66-Pin Ceramic PGA 1.385" SQ Individual Byte Selection

More information

IDT7134SA/LA. HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM

IDT7134SA/LA. HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM Features High-speed access : 5/45//7 (max.) Industrial: / (max.) Commercial: 2//5/45//7 (max.) Low-power operation IDT714 Active: 7mW (typ.) Standby: 5mW (typ.) IDT714 Active: 7mW (typ.) Standby: 1mW (typ.)

More information

4 Megabit (512K x8) Multi-Purpose Flash SST39SF040

4 Megabit (512K x8) Multi-Purpose Flash SST39SF040 Megabit (K x) Multi-Purpose Flash FEATURES: Organized as K X Single.0V Read and Write Operations Superior Reliability Endurance: 0,000 Cycles (typical) Greater than 0 years Data Retention Low Power Consumption:

More information

4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE. Rev. No. History Issue Date Remark

4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE. Rev. No. History Issue Date Remark 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. History Issue Date Remark 0.0 Initial issue July 23, 2003 1.0 Remove 24/26-pin

More information

Battery-Voltage. 16K (2K x 8) Parallel EEPROMs AT28BV16. Features. Description. Pin Configurations

Battery-Voltage. 16K (2K x 8) Parallel EEPROMs AT28BV16. Features. Description. Pin Configurations Features 2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 ma Active Current 50 µa CMOS Standby Current Read Access Time - 250 ns Byte Write - 3 ms Direct Microprocessor Control

More information

LY62L K X 16 BIT LOW POWER CMOS SRAM

LY62L K X 16 BIT LOW POWER CMOS SRAM REVISION ISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Jul.25.2004 Rev. 1.1 Revised Package Outline Dimension(TSOP-II) Apr.12.2007 Rev. 1.2 Added ISB1/IDR values when TA = 25 and TA = 40

More information

PY291A DESCRIPTION. Windowed devices for reprogramming. EPROM Technology for reprogramming. Fully TTL Compatible Inputs and Outputs

PY291A DESCRIPTION. Windowed devices for reprogramming. EPROM Technology for reprogramming. Fully TTL Compatible Inputs and Outputs 2K x 8 reprogrammable prom FEATURES EPROM Technology for reprogramming High Speed 20/25/35/50 ns (Commercial) 25/35/50 ns (Industrial) 35/50 ns (Military) Low Power Operation: 660 mw Single 5±10% Power

More information

MB85R M Bit (128 K 8) Memory FRAM CMOS DS E DESCRIPTIONS FEATURES FUJITSU SEMICONDUCTOR DATA SHEET

MB85R M Bit (128 K 8) Memory FRAM CMOS DS E DESCRIPTIONS FEATURES FUJITSU SEMICONDUCTOR DATA SHEET FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-5E Memory FRAM CMOS 1 M Bit (128 K 8) MB85R1001 DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x

More information

LY62L K X 16 BIT LOW POWER CMOS SRAM

LY62L K X 16 BIT LOW POWER CMOS SRAM Y6225716 256K 16 BIT OW POWER CMOS SRAM REVISION ISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Apr.19.2006 Rev. 2.0 Revised ISB(max) : 0.5mA => 1.25mA May.11.2006 Rev. 2.1 Adding 44-pin

More information

CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018

CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018 CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018 IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240

More information