MASW Dual / Tri / Quaand GSM Applications Electrical Specifications: T A = 25 C, V C = 0V/2.5V, Z 0 = 50 Ω 4 Parameter Test Conditions Units Min
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1 MASW Dual / Tri / Quaand GSM Applications Features Dual / tri / quadband GSM / GPRS / EDGE 2.5V Operation Harmonics: m & 1 GHz Insertion Loss: 1 GHz T X R X Isolation: 2 GHz LeadFree 4 mm 20Lead PQFN Package RoHS Compliant* and 260 C Reflow Compatible Functional Block Diagram Description M/ACOM s MASW is a GaAs PHEMT MMIC single pole six throw (SP6T) high power switch in a 4 mm PQFN package. Designed for dual, tri, or quadband GSM/GPRS/EDGE mobile devices, the MASW is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. This part can be used in all systems operating up to 2.5 GHz requiring high power at low control voltage. The MASW is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. The MASW can also be purchased in die form as the MASWSS0091. Ordering Information 1,2 Part Number MASW000105TR3000 MASW SMB Package 3000 piece reel Sample Test Board 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. Pin Configuration Pin No. Function VRx1 4 5 Rx1 6 Rx2 7 VRx2 8 VRxC 9 VRx3 10 Rx3 11 Rx VRx Tx2 17 VTx2 18 ANT 19 VTx1 20 Tx1 Description Rx1 Control Rx1 Port Rx2 Port Rx2 Control Rx Common Control Rx3 Control Rx3 Port Rx4 Port Rx4 Control Tx2 Port Tx2 Control ANT Pad Tx1 Control Tx1 Port 21 Paddle 3 RF and DC 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. 1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. ADVANCED: Data Sheets contain information regarding a product M/ACOM Technology Solutions PRELIMINARY: Data Sheets contain information regarding a product M/ACOM Technology M/ACOM Technology Solutions Inc. and its affiliates reserve the right to make
2 MASW Dual / Tri / Quaand GSM Applications Electrical Specifications: T A = 25 C, V C = 0V/2.5V, Z 0 = 50 Ω 4 Parameter Test Conditions Units Min. Typ. Max. Insertion Loss 5 Ant T X Ant R X GHz GHz GHz GHz T X to R X, T X On GHz GHz Isolation T X to T X, T X On R X to T X, R X On GHz GHz GHz GHz R X to R X, R X On GHz GHz Return Loss GHz GHz T X P0.1 V C = 0 V / 2.5 V m 36 R X P1 V C = 0 V / 2.5 V m 24 IP3 2nd Harmonic 3rd Harmonic Trise, Tfall Ton, Toff T X to ANT ANT to R X GHz GHz GHz GHz 10% to 90% RF, 90% to 10% RF 50% control to 90% RF, 50% control to 10% RF 4. External DC blocking capacitors are required on all RF ports. 5. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 100 pf for 0.5 GHz 2.0 GHz. m c c µs 0.5 µs 0.9 Transients In Band mv 30 Control Current V C = 2.5 V µa ADVANCED: Data Sheets contain information regarding a product M/ACOM Technology Solutions PRELIMINARY: Data Sheets contain information regarding a product M/ACOM Technology M/ACOM Technology Solutions Inc. and its affiliates reserve the right to make
3 MASW Dual / Tri / Quaand GSM Applications Absolute Maximum Ratings 6,7 Functional Schematic Parameter Input Power ( GHz, 2.5V Control) Voltage Operating Temperature Storage Temperature Absolute Maximum +38 m +8.5 volts 40 C to 65 C to +150 C 6. Exceeding any one or combination of these limits may cause permanent damage to this device. 7. M/ACOM does not recommend sustained operation near these survivability limits. Truth Table 8,9 VTx1 VTx2 VRxC VRx1 VRx2 VRx3 VRx4 ANT Tx1 ANT Tx2 ANT Rx1 ANT Rx2 ANT Rx3 ANT Rx On Off Off Off Off Off Off On Off Off Off Off Off Off On Off Off Off Off Off Off On Off Off Off Off Off Off On Off Off Off Off Off Off On 8. Differential voltage, V (state 1) V (state 0), must be 2.5 V minimum. 9. State 0 = 0 V to +0.2 V, State 1 = 2.5 V to 5 V. 3 ADVANCED: Data Sheets contain information regarding a product M/ACOM Technology Solutions PRELIMINARY: Data Sheets contain information regarding a product M/ACOM Technology M/ACOM Technology Solutions Inc. and its affiliates reserve the right to make
4 MASW Dual / Tri / Quaand GSM Applications Typical Performance Curves T X Insertion Loss 0.0 R X Insertion Loss C C T X T X Isolation T X R X Isolation C C 55 R X T X Isolation R X R X Isolation C C ADVANCED: Data Sheets contain information regarding a product M/ACOM Technology Solutions PRELIMINARY: Data Sheets contain information regarding a product M/ACOM Technology M/ACOM Technology Solutions Inc. and its affiliates reserve the right to make
5 MASW Dual / Tri / Quaand GSM Applications Typical Performance Curves 3rd Harmonic vs. 1 GHz, Pin = +35 m, 100% Duty Cycle Vctrl (V) 40 C Qualification Qualified to M/ACOM specification REL201, Process Flow 2. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Lead Free 4 mm 20lead PQFN Reference Application Note S2083 for leadfree solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is 100% matte tin over copper. 5 ADVANCED: Data Sheets contain information regarding a product M/ACOM Technology Solutions PRELIMINARY: Data Sheets contain information regarding a product M/ACOM Technology M/ACOM Technology Solutions Inc. and its affiliates reserve the right to make
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LCDA15C-6. Low Capacitance TVS Diode Array For Multi-mode Tranciever Protection. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics
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GRF2243. Preliminary. LNA with Bypass Tuning Range: 0.1 to 5.0 GHz. Product Description. Features. Applications
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MMA044AA Datasheet 6 GHz 18 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier
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AQ1026 Series 15pF 30kV Bidirectional Discrete TVS
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UM5304EEBF. Quad Channel Low Capacitance ESD Protection Array UM5304EEAF SC70-6/SC88/SOT363 UM5304EECF TSOP-6/SOT23-6. General Description
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TQM4M9073 Through Line
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Description The SRV05-4A is a low capacitance TVS (Transient Voltage Suppressor) array designed to protect sensitive semiconductor components from electrical overstress when interfaced to high-speed data