SP2555NUTG 2.5V 45A Diode Array
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- Dominic Gordon
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1 SP2555NUTG 2.5V 45A Diode Array RoHS Pb GREEN Description The SP2555NUTG is a low-capacitance, TVS Diode Array designed to provide protection against ESD (electrostatic discharge), CDE (cable discharge events), EFT (electrical fast transients), and lightning induced surges for highspeed, differential data lines. It s packaged in a μdfn package (3. x 2.mm) and each device can protect up 4 channels or 2 differential pairs, up to 45A (IEC nd edition,) and up to 3kV ESD (IEC 1-4-2). The flow-through design minimizes signal distortion, reduces voltage overshoot, and provides a simplified PCB design. The SP2555NUTG with its low capacitance and low clamping voltage makes it ideal for high-speed data interfaces such as 1GbE applications found in notebooks, switches, etc. Pinout Features ESD, IEC 1-4-2, ±3kV contact, ±3kV air EFT, IEC 1-4-4, 4A (5/5ns) Lightning, IEC nd edition, 45A (t P =8/2μs) Low capacitance of 2.5pF@V (TYP) per I/O Low leakage current of.1μa (TYP) at 2.5V μdfn-1 package is optimized for high-speed data line routing Provides protection for two differential data pairs (4 channels) up to 45A Low operating and clamping voltage AEC-Q11 qualified Halogen free, Lead free and RoHS compliant Functional Block Diagram Applications LINE1 IN (Pin 1) LINE1 OUT (Pin 1) LINE2 IN (Pin 2) LINE2 OUT (Pin 9) 1/1/1 Ethernet WAN/LAN Equipment Desktops, Servers and Notebooks LVDS Interfaces Integrated Magnetics Smart TV Application Example GND LINE3 IN (Pin 4) LINE3 OUT (Pin 7) GND RJ-45 Connector Ethernet PHY LINE4_IN (Pin 5) LINE4_OUT (Pin ) Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. SP2574N SP2555 TP+ TP- TP1+ TP1- TP2+ TP2- TP3+ TP3-
2 Absolute Maximum Ratings Symbol Parameter Value Units Peak Current (t p =8/2μs) 45 A P Pk Peak Pulse Power (t p =8/2μs) 1 W T OP Operating Temperature -4 to 5 C T STOR Storage Temperature -55 to 15 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T OP =25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM I R 1µA 2.5 V Reverse Leakage Current I R V RWM = 2.5V, T = 25 C.1.5 µa Snap Back Voltage V SB I SB = 5mA 2. V = 1A, t p = 8/2μs, Any I/O to Ground 4.5 = 1A, t p = 8/2μs, Any I/O to Ground 7.5 Clamp Voltage V C = 25A, t p = 8/2μs, Any I/O to Ground V = 45A, t p = 8/2μs, Line-to-Line 1, two I/O Pins connected together on each line 19 Dynamic Resistance 2 R DYN TLP, t p =1ns, Any I/O to Ground.1 Ω IEC (Contact) ±3 kv ESD Withstand Voltage V ESD IEC (Air) ±3 kv Diode Capacitance C I/O to GND C I/O to I/O Between I/O Pins and Ground V R = V, f = 1MHz Between I/O Pins V R = V, f = 1MHz 2.5 pf 1.2 pf Notes: 1. Rating with 2 pins connected together per sugguested diagram ( For example, pin1 is connected to pin 1, pin 2 is connected to Pin 9, Pin 4 is connected to pin 7 and pin 5 is connected to pin ) 2. Transmission Line Pulse (TLP) with 1ns width, 2ns rise time, and average window t1=7ns to t2= 9ns
3 Capacitance vs. Reverse Bias Clamping Voltage vs. (I/O to GND) Capacitance (pf) Clamp Voltage (V C ) Bias Voltage (V) Peak Pulse Current- (A) Clamping Voltage vs. (Line-to-Line) 8/2μS Pulse Waveform Clamp Voltage (V C ) Peak Pulse Current- (A) Percent of 11% 1% 9% 8% 7% % 5% 4% 3% 2% 1% % Time (μs) Transmission Line Pulsing(TLP) Plot TLP Current (A) TLP Voltage (V)
4 Temperature TVS Diode Arrays (SPA Diodes) Soldering Parameters Reflow Condition Pre Heat Ordering Information Pb Free assembly - Temperature Min (T s(min) ) 15 C - Temperature Max (T s(max) ) 2 C - Time (min to max) (t s ) 18 secs Average ramp up rate (Liquidus) Temp (T L ) to peak 3 C/second max T S(max) to T L - Ramp-up Rate 3 C/second max - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) 15 seconds Peak Temperature (T P ) 2 +/-5 C Time within 5 C of actual peak Temperature (t p ) 2 4 seconds Ramp-down Rate C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 2 C Part Number Package Marking Min. Order Qty. SP2555NUTG µdfn-1 (3.x2.mm) SP T P T L T S(max) T S(min) 25 Product Characteristics Lead Plating Lead Material Lead Coplanarity Substrate material Body Material Pre-Plated Frame Copper Alloy.4 inches(.mm) Silicon Molded Epoxy Flammability UL 94 V- MSL Rating Level 1 t S Preheat Ramp-up time to peak temperature t P t L Ramp-down Time Critical Zone TL to TP Part Numbering System Part Marking System TVS Diode Arrays (SPA Diodes) Series SP2555N U T G G= Green T= Tape & Reel Package μdfn-1 (3.x2.mm)
5 Package Dimensions µdfn-1 (3.x2.mm) D b1 L Package µdfn-1 (3.x2.mm) E L1 JEDEC Symbol MO-229 Millimeters Inches Min Nom Max Min Nom Max 1.98mm 1.mm A3 e PIN1 INDICATOR A A1.95mm.95mm.25mm 1.4mm 1.98mm.85mm e2 b e1.95mm.95mm.25mm 1.4mm A A A3.15 Ref. Ref b b D E e. BSC.24 BSC e1.5 BSC.2 BSC e2.95 BSC.37 L L mm.mm.5mm.5mm.mm.mm Recommended Soldering Pads Layout.4mm.mm.5mm.5mm.mm.mm Recommended Stencil Apertures Recommended Stencil thickness 5mils Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI Tape & Reel Specification µdfn-1 (3.x2.mm) T K Top Cover Tape 5 Max W P A B P P2 ø1.55±.5 E F ø1.±.1 Device Orientation in Tape Pin1 Location Package µdfn-1 (3.x2.mm) Symbol Millimeters A 2.3 +/-.1 B 3.2 +/-.1 E /-.1 F 3.5 +/-.5 K 1. +/-.1 P 4. +/-.1 P 4. +/-.1 P2 2. +/-.1 T.3 +/-.5 W /-.1
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