SP2574NUTG 2.5V 40A Diode Array

Transcription

1 TVS Diode Arrays (SPA Diodes 2.5V 40A Diode Array RoHS Pb GREEN Description The is a low-capacitance, TVS Diode Array designed to provide protection against ESD (electrostatic discharge, CDE (cable discharge events, EFT (electrical fast transients, and lightning induced surges for highspeed, differential data lines. It s packaged in a µdfn package (3.0 x mm and each device can protect up 4 channels or 2 differential pairs, up to 40A (IEC , 2nd edition and up to 30kV ESD (IEC The flow-through design minimizes signal distortion, reduces voltage overshoot, and provides a simplified PCB design. The with its low capacitance and low clamping voltage makes it ideal for high-speed data interfaces such as 1GbE applications found in notebooks, switches, etc. Pinout Functional Block Diagram Features ESD, IEC , ±30kV contact, ±30kV air EFT, IEC , 40A (5/50ns Lightning, IEC , 2nd edition 40A (t P =8/20μs Low capacitance of 3.8pF@0V (TYP per I/O Low leakage current of 0.1μA (TYP at 2.5V Applications μdfn-10 package is optimized for high-speed data line routing Provides protection for two differential data pairs (4 channels up to 40A Low operating and clamping voltage AEC-Q101 qualified RoHS compliant and lead-free LINE1 IN (Pin 1 LINE1 OUT (Pin 10 LINE2 IN (Pin 2 LINE2 OUT (Pin 9 10/100/1000 Ethernet WAN/LAN Equipment Desktops, Servers and Notebooks LVDS Interfaces Integrated Magnetics Smart TV Small Cells GND GND Application Example LINE3 IN (Pin 4 LINE3 OUT (Pin 7 LINE4_IN (Pin 5 LINE4_OUT (Pin 6 RJ-45 Connector Ethernet PHY Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. SP2574N TP0+ TP0- TP1+ TP1- TP2+ TP2- TP3+ TP3-

2 TVS Diode Arrays (SPA Diodes Absolute Maximum Ratings Symbol Parameter Value Units Peak Current (t p =8/20μs 40 1 A P Pk Peak Pulse Power (t p =8/20μs 1000 W T OP Operating Temperature -40 to 125 C T STOR Storage Temperature -55 to 150 C Notes:1. Rating with 2 pins connected together per sugguested diagram ( For example, pin1 is connected to pin 10, pin 2 is connected to Pin 9, Pin 4 is connected to pin 7 and pin 5 is connected to pin 6 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T OP =25ºC Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM I R 1µA 2.5 V Reverse Leakage Current I R V RWM = 2.5V, T = 25 C µa Breakdown Voltage V BR I t1 = 1μA V Snap Back Voltage V SB I H = 1mA 3.0 V = 1A, t p 4.5 = 10A, t p 7.5 Clamp Voltage V C = 25A, t p V = 40A, t p Line-to-Line 1, two I/O Pins connected together on each line Dynamic Resistance 2 R DYN TLP, t p =100ns, 0.13 Ω IEC (Contact ±30 kv ESD Withstand Voltage V ESD IEC (Air ±30 kv Between I/O Pins and Ground C I/O to GND pf Diode Capacitance V R = 0V, f = 1MHz Between I/O Pins C I/O to I/O 1.7 pf V R = 0V, f = 1MHz Notes: 1. Rating with 2 pins connected together per sugguested diagram ( For example, pin1 is connected to pin 10, pin 2 is connected to Pin 9, Pin 4 is connected to pin 7 and pin 5 is connected to pin 6 2. Transmission Line Pulse (TLP with 100ns width and 200ps rise time. 2 Normalized Capacitance vs. Voltage Insertion Loss (S Normalized Capacitance Insertion Loss(dB Bias Voltage (V Frequency (MHz

3 TVS Diode Arrays (SPA Diodes Clamping Voltage vs. (I/O to GND Clamping Voltage vs. (Line-to-Line, Two I/O Pins Connected Together Clamp Voltage (V C Clamp Voltage (V C Peak Pulse Current- (A Peak Pulse Current- (A Pulse Waveform Non-Repetitive Peak Pulse Power vs. Pulse Time Percent of 110% 100% 90% 80% 70% 60% 50% 40% 30% Peak Pulse Power (kw % 10% 0% Time (μs Pulse Duration - tp (µs Transmission Line Pulse (TLP Additional Information Datasheet Resources Samples TLP Current (A TLP Voltage (V

4 Temperature TVS Diode Arrays (SPA Diodes Soldering Parameters Reflow Condition - Temperature Min (T s(min 150 C Pb Free assembly T P Ramp-up t P Critical Zone TL to TP Pre Heat - Temperature Max (T s(max 200 C - Time (min to max (t s secs Average ramp up rate (Liquidus Temp (T L to peak T S(max to T L - Ramp-up Rate 3 C/second max 3 C/second max T L T S(max T S(min t S Preheat t L Ramp-down Reflow - Temperature (T L (Liquidus 217 C - Temperature (t L seconds 25 time to peak temperature Time Peak Temperature (T P /-5 C Time within 5 C of actual peak Temperature (t p seconds Ramp-down Rate 6 C/second max Time 25 C to peak Temperature (T P 8 minutes Max. Do not exceed 260 C Product Characteristics Lead Plating Lead Material Lead Coplanarity Substrate material Body Material Pre-Plated Frame Copper Alloy 004 inches (0.102mm Silicon Molded Epoxy Ordering Information Part Number Package Marking Min. Order Qty. µdfn-10 (3.0xmm ABR Flammability UL 94 V-0 Part Numbering System Part Marking System TVS Diode Arrays (SPA Diodes Series SP2574N U T G G= Green T= Tape & Reel ABR4 Package μdfn-10 (3.0xmm Pin 1

5 TVS Diode Arrays (SPA Diodes Package Dimensions µdfn-10 (3.0xmm D b1 L Package µdfn-10 (3.0xmm JEDEC MO-229 A3 E PIN1 INDICATOR A1 Recommended Solder Pads A e e2 e1 b L1 Millimeters Inches Symbol Min Nom Max Min Nom Max A A A Ref 06 Ref b b D E e 0 BSC 24 BSC e1 5 BSC 26 BSC e BSC 37 L L Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI Tape & Reel Specification µdfn-10 (3.0xmm T K0 Top Cover Tape 5 Max W P0 A0 B0 P P2 扑 : 1.55±5 E F : 1.0±0.1 Device Orientation in Tape Pin1 Location Package µdfn-10 (3.0xmm Symbol Millimeters A / B / E / F /- 5 K / P / P / P2 0 +/ T 0.3 +/- 5 W /- 0.10