S-24 Series. Rev.1.1 SERIAL NON-VOLATILE RAM

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Caitlin Owens
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1 Rev.. SERIL NON-VOLTILE RM S- Series The S- Series is a non-volatile CMOS RM, composed of a CMOS static RM and a non-volatile electrically erasable and programmable memory (E PROM) to backup the SRM. The organization is - word -bit (total bits) for the S-H and the S-S, and - word -bit (total bits) for the S-H and the S-S. Features bits S-H : TTL input, compatible with the of icor S-S : Schmitt input for STORE and RECLL pins bits S-H : TTL input S-S : Schmitt input for STORE and RECLL pins Non-volatile functions can be controlled by software and hardware Erroneous store protection :. V ll inputs and outputs are compatible with TTL * Except STORE and RECLL pins for the S-S Series +-V single power supply (+ V±%) Low current consumption Operating : m typ. Standby : µ max. E PROM store cycles : times E PROM data retention: years -pin P/SOP package Pin ssignment -pin P Top view V CC STORE RECLL GND STORE V CC -pin SOP Top view RECLL GND Chip enable Serial clock Serial data input Serial data output RECLL Recall STORE Store GND Ground V CC Power supply voltage (+ V) Figure Seiko Instruments Inc.

2 SERIL NON-VOLTILE RM S- Series Block Diagram Non-volatile E PROM Memory rray Store Recall Row Decoder Static RM Control Logic RECLL STORE V CC GND Instruction Register Column Decoder Instruction Decoder Counter bsolute Maximum Ratings Figure Table Parameter Symbol Ratings Unit Power supply voltage V CC -. to +. V Input voltage V IN -. to V CC +. V Output voltage V OUT. to V CC V Storage temperature under bias T bias - to+9 C Storage temperature T stg - to+ C Recommended Operating Conditions Table Pin Capacitance Parameter Symbol Conditions Min. Typ. Max. Unit Power supply voltage V CC... V High level input voltage V IH S-H Series : ll inputs. V CC V S-S Series :, and High level input voltage V IHS S-S Series : STORE and RECLL. V CC V Low level input voltage V IL S-H Series : ll inputs.. V S-S Series :, and Low level input voltage V ILS S-S Series : STORE and RECLL.. V Operating temperature T opr - + C Table (Ta= C, f=. MHz, V CC = V) Parameter Symbol Conditions Min. Typ. Max. Unit Input capacitance C IN V IN = V pf Output capacitance C OUT V OUT = V pf Seiko Instruments Inc.

3 SERIL NON-VOLTILE RM S- Series DC Electrical Characteristics Table (Ta=- C to C, V CC =+ V±%) Parameter Symbol Conditions Min. Typ. Max Unit Operating current consumption I CC unloaded m Sleep current I SL ll inputs are V CC µ Standby current I SB =GND, Other inputs are V CC µ Store current I STO m Input leakage current I LI V IN =GND to V CC. µ Output leakage current I LO V OUT =GND to V CC. µ Low level output voltage V OL CMOS : I OL = µ. V TTL : I OL =. m. V High level output voltage V OH CMOS : I OH =- µ V CC -. V TTL : I OH =- µ. V Store inhibition voltage V WI.. V Schmitt width V WD S-S Series : STORE and RECLL. V Data Hold Characteristics Table Parameter Symbol Conditions Min. Typ. Max Unit Data hold voltage V DH.V, RECLL V CC -.V.. V Data hold setup time t CDH ns Recovery time t R ns Data hold mode V CC.V t CDH t R V IH V IL V DH GND Figure Data hold timing chart Seiko Instruments Inc.

4 SERIL NON-VOLTILE RM S- Series C Electrical Chracteristics Parameter Input pulse voltage Input pulse rise/fall time I/O reference voltage Output load Table Measuring conditions Conditions S-H Series : ll inputs S-S Series :, and S-S Series : STORE and RECLL. to. V. to. V ns. V TTL+pF. Data input/output timing Table Parameter Symbol Min. Typ. Max Unit frequency f MHz high level pulse width t H. µs low level pulse width t L. µs Input data setup time t DS. µs Input data hold time t DH. µs data valid time t PD. µs Output disable time t HZ. µs setup time t S. µs hold time t H. µs deselect time t CDS. µs t S t H t CDS t H t L t DS t DH Invalid data Valid data Invalid data t PD t PD t HZ must be kept high during instructions. When rises after selecting, the first is taken into input and the fetch of an instruction starts. ll previous is ignored.. Recall Cycle Figure Control data timing Table Parameter Symbol Min. Typ. Max Unit Recall cycle time t RCC ns Recall pulse width t RCP ns Recall disable time t RCZ ns Recall enable time t ORC ns Recall data access time t RC ns * Recall times are not limited. t RCC t RCP RECLL t RC t RCZ t ORC Valid data Undefined data Figure Hardware recall Seiko Instruments Inc.

5 SERIL NON-VOLTILE RM S- Series. Store Cycle Table 9 Parameter Symbol Min. Typ. Max Unit Store time t ST ms Store pulse width t STP. µs Store disable time t STZ. µs Store times: times Data retention : years STORE t ST t STP t STZ Hi- Z Figure Hardware store Instruction Set Instruction Symbol Format I I I Table Function Write enable latch reset WRDS Reset write enable latch (Disable write and store) Write enable latch set WREN Set write enable latch (Enable write and store) Read RED Read data from RM address Write WRITE Write data into RM address Store STO Store RM data in E PROM Recall RCL Recall E PROM data into RM Sleep SLEEP Enter sleep mode : Don t care : ddress bit The format is composed of a start bit(), address( ) and an instruction(i I I ). ddress is for the S-H and the S-S. Seiko Instruments Inc.

6 SERIL NON-VOLTILE RM S- Series Operation. Internal latches The S- Series has two latches, one of which controls write operation of the SRM, and both of which control permission/inhibition of store operation of the E PROM.. Previous recall latch The previous recall latch controls permission/inhibition of store operation of E PROM. It is reset when the power is turned on, and it inhibits store operation of the E PROM. It is set by executing the software recall instruction or hardware recall, and it permits store operation of the E PROM.. Write enable latch The write enable latch controls permission/inhibition of both store operation of the E PROM and write operation of the SRM. It is reset when the power is turned on or by executing WRDS instruction, and it inhibits both store operation of the E PROM and write operation of the SRM. It is set by executing WREN instruction, and it permits both store operation of the E PROM and write operation of the SRM. When store operation of the E PROM is completed, the write enable latch is automatically reset. Therefore, in order to execute store operation again, it is necessary to execute WREN instruction and to set the write enable latch.. Both the previous recall latch and the write enable latch must be set for permission of store operation. Software recall instruction Hardware recall operation Power-on Set Reset Previous recall latch Set : permission Reset : inhibition E PROM store operation control WREN instruction Power-on WRDS instruction Store operation completed Set Reset Write enable latch Set : permission Reset : inhibition SRM write operation control Figure Internal latch. SRM mode. Read The data is read from the SRM through RED instruction. Inputting a start bit, address and instruction code causes data output on. In the S- Series, a bi-directional serial interface can be made by connecting and. See Figures and 9 for the timing.. Write The data is written into the SRM through WRITE instruction. Input data on after a start bit, address and instruction code. See Figures and for the timing. The write enable latch must be set before WRITE instruction. Seiko Instruments Inc.

7 SERIL NON-VOLTILE RM S- Series. E PROM mode Data is input to and output from the E PROM through the SRM.. Store The SRM data is copied into the E PROM when STO instruction is executed or STORE goes low. The SRM data does not change after STO instruction. Since the data stored in the E PROM is non-volatile, it is retained even if power is turned off. In the case that store operation is performed while data is output on and during read operation of the SRM, becomes high-impedance. During store operation, all other operations are inhibited. Both the previous recall latch and the write enable latch must be set before store operation.. Recall The E PROM data is recopied into the SRM when RECLL goes low or RCL instruction is executed. In the case that recall operation is performed while data is output on and during read operation of SRM, becomes highimpedance. During recall operation, all other operations are inhibited.. Sleep mode Executing SLEEP instruction disables operation of the SRM. The E PROM data is retained. The sleep mode can be released by recall operation. Since the S- Series is in standby status and the current consumption is low when is at GND level, it is not necessary to execute SLEEP instruction in order to reduce the current consumption while not operating.. Operation timing fter rose, when clock rises and goes high, a start bit is recognized and the fetch of an instruction starts. Data is fetched to terminal at the rise of clock.. Read D is output at the fall of the th clock, and others are output at the rise of the clock. 9 9 D 9 D : Don t care Figure Read mode timing(s-h, S-S) 9 D Figure 9 Read mode timing(s-h, S-S) : Don t care Seiko Instruments Inc.

8 SERIL NON-VOLTILE RM S- Series. Write Data is written to the SRM at the rise of clock. 9 9 D 9 Figure Write mode timing(s-h, S-S) 9 D Figure Write mode timing(s-h, S-S). Other operation modes must be low between instructions. I I I Figure Other operation modes timing Seiko Instruments Inc.

9 SERIL NON-VOLTILE RM S- Series Interface with CPU with Serial Port When and are high at the rise of, high of is regarded as a start bit and the clock generates and the high of is fetched. When is low, is not regarded as a start bit until becomes high at the rise of. fter power on or after an instruction is performed, must be set for preparing the fetch of the start bit of the next instruction. Figures to show the timings of write/read, and other operation modes, and interfacing examples are shown in Figures to. ~CLK Fetch data Fetch CPU data 9 Start bit D 9 D D dummy bit Fetch CPU data Need not to be fetched Figure Read mode timing(s-h, S-S) ~CLK Fetch data Fetch CPU data 9 Start bit D D dummy bit Fetch CPU data Need not to be fetched Figure Read mode timing(s-h, S-S) ~CLK Fetch data Write to SRM 9 9 Start bit D 9 Dummy bit Figure Write mode timing(s-h, S-S) ~CLK Fetch data Write to SRM 9 Start bit D Dummy bit Figure Write mode timing(s-h, S-S) Execute instruction ~CLK Fetch data 9 Start bit I I I Dummy bit: Figure Other operation mode timing Recommended to be set to for fetching the start bit of next instruction Seiko Instruments Inc. 9

10 SERIL NON-VOLTILE RM S- Series Interfacing example : With Intel, P. V CC, P. P. STORE RECLL GND Figure Interfacing example : With other CPU When the S- Series is connected to CPU other than Intel and, delay circuit should be set by a capacitor and a resistor at terminal (Figure 9), delaying the signal more than ns as in Figure to assure the data hold time (t DHU ) and the data setup time (t DSU ) of CPU. CPU kω V CC STORE RECLL GND pf Figure 9 t t PD (without delay) Valid data Valid data Valid data Valid data (with delay) t PD t DSU t DHU Figure The maximum speed of the clock (f M ) is expressed by the following formula: f M = t = t DSU +t DHU +t PD max. For example, when interfacing with NEC µpd series, f M is as follows: µpd series t DSU : ns min. t DHU : ns min. S- Series t PD : ns min., ns max. f M = = t 9 = ++ = 9 khz. µs Seiko Instruments Inc.

11 SERIL NON-VOLTILE RM S- Series Ordering Information S- Rewriting times : times Package Blank : P F : SOP Temperature I : C to C Memory size : -bit : -bit Input level H : ll pins TTL compatible S : Schmitt input for STORE and RECLL pins Seiko Instruments Inc.

12 SERIL NON-VOLTILE RM S- Series Characteristics. DC Characteristics. Operating current consumption I CC mbient temperatureta. Operating current consumption I CC Power supply voltage V CC V CC =. V Ta=- C I CC (m) I CC (m) V CC (V). Operating current consumption I CC frequency f. Sleep/standby current consumption I SL /I SB mbient temperature Ta Ta= C V CC =. V. I CC (m) I SL /I SB (µ). V CC =. V k k M f (Hz). Store current consumption I STO mbient temperature Ta. Store current consumption I STO Power supply voltage V CC Ta= C I STO (m) V CC =. V I STO (m) V CC (V). Store inhibition voltage V WI mbient temperature Ta V WI (V) Seiko Instruments Inc.

13 SERIL NON-VOLTILE RM S- Series. Input voltage V IN mbient temperature Ta S-H Series : ll inputs S-S Series :, and.9 Input voltage V IN Power supply voltage V CC S-H Series : ll inputs S-S Series :, and. V CC =. V. Ta= C V IN (V) V IN (V)... Input voltage V IN mbient temperature Ta S-S Series : STORE and RECLL V CC (V). Input voltage V IN Power supply voltage V CC S-S Series : STORE and RECLL V IHS V IHS V IN (V) V ILS V IN (V) V ILS V CC =. V Ta= C V CC (V). High level output current I OH mbient temperature Ta. Low level output current I OL mbient temperature Ta V CC =. V V OH =.V V CC =. V V OL =.V I OH (m) I OL (m). High level output voltage V OH mbient temperature Ta. Low level output voltage V OL mbient temperature Ta V OH (V).. V CC =. V V OL (V).. V CC =. V.. Seiko Instruments Inc.

14 SERIL NON-VOLTILE RM S- Series. C Characteristics. pulse width t mbient temperature Ta. pulse width t Power supply voltage V CC. V CC =. V. Ta= C t (µs). t (µs). V CC (V). Input data setup time t DS mbient temperature Ta. Input data hold time t DH mbient temperature Ta V CC =. V V CC =. V t DS (ns) t DH (ns). data valid time t PD mbient temperature Ta. Recall pulse width t RCP mbient temperature Ta V CC =. V V CC =. V t PD (ns) t RCP (ns). Recall cycle time t RCC mbient temperature Ta. Store time t ST mbient temperature Ta. V CC =. V V CC =. V t RCC (µs). t ST (ms) Seiko Instruments Inc.

15 SERIL NON-VOLTILE RM S- Series. Rewriting Characteristics Ta= C Minimum store voltage (V) Store cycle (times) Seiko Instruments Inc.

18 The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar rrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. lthough Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.

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