General Purpose, Low Noise NPN Silicon Bipolar Transistor. Technical Data AT AT-41533
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1 General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-411 AT-433 Features General Purpose NPN Bipolar Transistor 9 MHz Performance: AT-411: 1 db NF,. db G A AT-433: 1 db NF, 14. db G A Characterized for 3,, and 8 Volt Use SOT-23 and SOT-143 SMT Plastic Packages Tape-and-Reel Packaging Option Available [1] Outline Drawing EMITTER BASE 4 COLLECTOR EMITTER SOT 143 (AT-411) COLLECTOR 4 Description Hewlett-Packard s AT-411 and AT-433 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-433 uses the 3 lead SOT-23, while the AT-4 11 places the same die in the lower parasitic 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 4 micron emitter-to-emitter pitch of these transistors yields high performance products that can perform a multiplicity of tasks. The 14 emitter finger interdigitated geometry yields an intermediate-sized transistor with easy to match to impedances, low noise figure, and moderate power. Optimized for best performace from a to 8 volt bias supply, these transistors are also good performers at 2.7 V. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, or active mixer. An optimum noise match near ohms at 9 MHz makes these devices particularly easy to use as LNAs. Typical amplifier designs at 9 MHz yield 1 db noise figures with db or more associated gain at a V, bias, with good gain and noise figure obtainable at biases as low as 2 ma. The AT-4 series bipolar transistors are fabricated using Hewlett-Packard s 1 GHz f T Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices. BASE EMITTER SOT 23 (AT-433) 1. Refer to Tape-and-Reel Packaging for Semiconductor Devices E 4-134
2 AT-411, AT-433 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1. V CBO Collector-Base Voltage V 2 V CEO Collector-Emitter Voltage V 12 I C Collector Current ma P T Power Dissipation [2,3] mw 2 T j Junction Temperature C T STG Storage Temperature C -6 to Thermal Resistance: [2] θ jc = C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. T Mounting Surface = C. 3. Derate at 1.82 mw/ C for T C > 26 C. Electrical Specifications, T A = C AT-411 AT-433 Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max h FE Forward Current Transfer Ratio V CE = V I C = I CBO Collector Cutoff Current V CB = 3 V µa.2.2 I EBO Emitter Cutoff Current V EB = 1 V µa Characterization Information, T A = C AT-411 AT-433 Symbol Parameters and Test Conditions Units Min Typ Min Typ NF Noise Figure f =.9 GHz db V CE = V, I C = f = 2.4 GHz G A Associated Gain f =.9 GHz db. 14. V CE = V, I C = f = 2.4 GHz 11 9 P 1dB Power at 1 db Gain Compression (opt tuning) f =.9 GHz dbm V CE = V, I C = G 1dB Gain at 1 db Gain Compression (opt tuning) f =.9 GHz db V CE = V, I C = IP 3 Output Third Order Intercept Point, f =.9 GHz dbm V CE = V, I C = (opt tuning) S 21E 2 Gain in Ω system; V CE = V, I C = f =.9 GHz db f = 2.4 GHz Ordering Information Part Number Increment Comments AT-411-BLK 1 Bulk AT-411-TR1 3 7" Reel AT-433-BLK 1 Bulk AT-433-TR1 3 7" Reel 4-13
3 AT-411, AT-433 Typical Performance NOISE FIGURE (db) , NOISE FIGURE (db) ma NOISE FIGURE (db) Figure 1. AT-411 and AT-433 Minimum Noise Figure vs. Frequency and Current at V CE = 2.7 V. Figure 2. AT-411 and AT-433 Minimum Noise Figure vs. Frequency and Current at V CE = V. Figure 3. AT-411 and AT-433 Minimum Noise Figure vs. Frequency and Current at V CE = 8 V , PKG 11 PKG 11 G a PKG 11 (db) 1 2 ma 1, 2 ma PKG G a PKG 33 (db) G a (db) 1 PKG 33 1, 1, G a (db) 1 PKG 33 1, 1,.1 PKG Figure 4. AT-411 and AT-433 Associated Gain vs. Frequency and Current at V CE = 2.7 V. Figure. AT-411 and AT-433 Associated Gain vs. Frequency and Current at V CE = V. Figure 6. AT-411 and AT-433 Associated Gain vs. Frequency and Current at V CE = 8 V P 1 db (dbm) 1 P 1 db (dbm) 1 P 1 db (dbm) Figure 7. AT-411 and AT-433 P 1dB vs. Frequency and Bias at V CE = 2.7 V, with Optimal Tuning. Figure 8. AT-411 and AT-433 P 1dB vs. Frequency and Bias at V CE = V, with Optimal Tuning Figure 9. AT-411 and AT-433 P 1dB vs. Frequency and Bias at V CE = 8 V, with Optimal Tuning.
4 AT-411 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = AT-411 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = Figure 1. AT-411 Gains vs. Frequency at V CE = 2.7 V, I C =. AT-433 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = AT-433 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = Figure 11. AT-433 Gains vs. Frequency at V CE = 2.7 V, I C =.
5 AT-411 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = AT-411 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = Figure 12. AT-411 Gains vs. Frequency at V CE = 2.7 V, I C = ma. AT-433 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = AT-433 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = Figure 13. AT-433 Gains vs. Frequency at V CE = 2.7 V, I C =.
6 AT-411 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = V, I C = AT-411 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = V, I C = Figure 14. AT-411 Gains vs. Frequency at V CE = V, I C =. AT-433 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = V, I C = AT-433 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = V, I C = Figure. AT-433 Gains vs. Frequency at V CE = V, I C =.
7 AT-411 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = V, I C = AT-411 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = V, I C = Figure 16. AT-411 Gains vs. Frequency at V CE = V, I C =. AT-433 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = V, I C = AT-433 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = V, I C = Figure 17. AT-433 Gains vs. Frequency at V CE = V, I C =.
8 AT-411 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = AT-411 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = Figure 18. AT-411 Gains vs. Frequency at V CE = 8 V, I C =. AT-433 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = AT-433 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = Figure 19. AT-433 Gains vs. Frequency at V CE = 8 V, I C =.
9 AT-411 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = AT-411 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = Figure 2. AT-411 Gains vs. Frequency at V CE = 8 V, I C =. AT-433 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = AT-433 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = Figure 21. AT-433 Gains vs. Frequency at V CE = 8 V, I C =.
10 Package Dimensions SOT-143 Plastic Package.92 (.36).78 (.31) PACKAGE MARKING CODE E XXX C 1.4 (.) 1.2 (.47) 2.6 (.14) 2.1 (.83) B E.6 (.24).4 (.18) 2.4 (.8) 1.78 (.7).4 (.21).37 (.) 3.6 (.12) 2.8 (.11). (.6).9 (.3) 1.2 (.41).8 (.33).1 (.4).13 (.).69 (.27).4 (.18) DIMENSIONS ARE IN MILLIMETERS (INCHES) SOT-23 Plastic Package 1.2 (.4).89 (.3).4 (.21).37 (.) 3 PACKAGE MARKING CODE XXX 1.4 (.) 1.2 (.47) 2.6 (.14) 2.1 (.83) (.24).4 (.18) 2.4 (.8) 1.78 (.7) TOP VIEW 3.6 (.12) 2.8 (.11) 1.2 (.41).8 (.33).2 (.6).66 (.3).1 (.4).13 (.) SIDE VIEW.69 (.27).4 (.18) END VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) 4-143
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Product Description Features Reference: 5V/70 ma/3.6 GHz Gain: 17.8 db Eval Board NF: 0.65 db OP1dB: 19.5 dbm OIP3: 36.5 dbm High Isolation Shut Down State Flexible Bias Voltage is a broadband, linear,
GRF2870 Guerrilla Bloc Ultra-LNA GHz
Product Description is a fully integrated amplifier offering industry leading ultra-low noise and high linearity over 0.6 to 1.0 GHz with no external matching or bias de-coupling required. Features Reference:
GRF2072. Preliminary. Ultra-Low Noise Amplifier Tuning Range: GHz. Product Description. Features. Applications
Product Description Features Reference: 5V/70mA/2.5 GHz Gain: 19.8 db Eval Board NF: 0.55 db OP1dB: 20.0 dbm OIP3: 37.5 dbm Flexible Bias Voltage and Current Process: GaAs phemt is a broadband, linear,
Ordering Information Industry standard SOT343R package Device weight = g (typical) Available only in tape and reel packaging Available only in
Freescale Semiconductor Technical Data Document Number: MBC13916/D Rev. 2.2, 05/2006 MBC13916 MBC13916 General Purpose SiGe:C RF Cascode Low Noise Amplifier 1 Introduction The MBC13916 is a costeffective,
Monolithic Amplifier CMA-252LN+ Ultra Low Noise, High IP to 2.5 GHz. The Big Deal
Ultra Low, High IP3 Monolithic Amplifier 50Ω The Big Deal 1.5 to 2.5 GHz Ceramic, Hermetically Sealed, Nitrogen filled Low profile case,.045 high Ultra Low High Gain, High IP3 Class 1B HBM ESD (500V) CASE
MMA044AA Datasheet 6 GHz 18 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier
MMA044AA Datasheet 6 GHz 18 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA:
AOZ8101. Ultra-Low Capacitance TVS Diode Array. General Description. Features. Applications. Typical Application
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BC337/338. Symbol Parameter Value Units V CES V V V CEO. Symbol Parameter Test Condition Min. Typ. Max. Units V V BV CES. I C =0.
BC337/338 BC337/338 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328 NPN Epitaxial Silicon Transistor 1 TO-92 1. Collector 2. Base
GRF4200. Preliminary. High Gain, Linear Driver Tuning Range: GHz. Product Description. Features. Applications
Product Description Features Reference: 5V/35mA/1.9 GHz EVB NF: 4.0 db Gain: 21.5 db OP1dB: 18.0 dbm is a linear gain block designed for small cell, wireless infrastructure and other high performance applications.
GRF2243. Preliminary. LNA with Bypass Tuning Range: 0.1 to 5.0 GHz. Product Description. Features. Applications
Product Description Features Reference: 3.3V/15mA/2.5 GHz Gain: 19.8 db EVB NF: 0.75 db is a low noise amplifier (LNA) with low loss bypass which requires only a single control input. It is designed for
M3Z2V4~M3Z75V ZENER DIODES 200mW ZENER VOLTAGE REGULATORS
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GRF2505. Released. Broadband LNA/Linear Driver 4.0 to 6.0 GHz. Product Description. Features. Applications
Product Description is a broadband, ultra-low noise, linear amplifier offering the highest levels of performance for demanding 802.11ac and wireless backhaul LNA and PA driver applications. Features Reference:
MCH3007. RF Transistor 12V, 30mA, ft=8ghz, NPN Single MCPH3. Features. Specifications
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500mW, 5% Tolerance SMD Zener Diodes
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TA = 25 C unless otherwise noted. Symbol Parameter Value Units
BCP53 BCP53 C SOT-223 B C E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from
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GRF2073-W. Preliminary. Ultra-LNA: SDARS/Compenser/GPS. Product Description. Features. Automotive Applications
Product Description Features Reference: 5V/70 ma/2332.5 MHz Gain: 20.5 db NF: 0.40 db OP1dB: 19.8 dbm OIP3: 35.0 dbm is a linear, ultra-low noise amplifier designed for automotive satellite radio multi-stage
GRF5110. Preliminary dbm Power-LNA Tuning Range: GHz. Product Description
Preliminary Product Description is a high linearity PA /Linear Driver with low noise figure (NF). It delivers excellent P1dB, IP3 and NF over a wide range of frequencies with fractional bandwidths of roughly
1 GHz wideband low-noise amplifier with bypass. The LNA is housed in a 6-pin SOT363 plastic SMD package.
Rev. 2 14 September 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a wideband amplifier with. It is designed specifically for high linearity, low-noise applications over
GRF4042. Low Noise Amplifier with Bypass & Guerrilla Armor ; GHz. Features. Applications. Preliminary. Product Description
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AOZ8900. Ultra-Low Capacitance TVS Diode Array PRELIMINARY. Features. General Description. Applications. Typical Application
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Enables prolonged battery life. Saves DC power consumption when it is not reguired.
Ultra Low Noise, Low Current, Shutdown Monolithic Amplifier 50Ω 10 to 13 GHz The Big Deal Ultra-low noise figure, 1.3 db Low Current, 13 ma at 3V and 29mA at 5V Excellent ESD protection, Class 1C Small
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Product Description GRF2541 is an ultra-low noise amplifier (LNA) with bypass designed for IEEE 802.11a/n/ac/p applications in the 5GHz band (5.1 GHz to 5.925 GHz). The device exhibits outstanding de-embedded
500mW, 5% Tolerance SMD Zener Diodes
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GRF2051. Ultra-Low Noise Amplifier; Tuning Range: GHz. Features. Applications. Preliminary. Product Description. Functional Block Diagram Ven
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LCD and Camera EMI Filter Array with ESD Protection
LCD and Camera EMI Filter Array with ESD Protection Features Six and eight channels of EMI filtering with integrated ESD protection 0.4mm pitch, 15-bump, 2.360mm x 1.053mm footprint Chip Scale Package
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GRF2505. Linear PA Driver/Ultra-low Noise Amplifier; GHz. Features. Applications. Preliminary. Product Description. Functional Block Diagram
Linear PA Driver/Ultra-low Noise Amplifier; 4.0-6.0 GHz Package: 6-Pin DFN Product Description Features Broadband: 4.0 GHz to 6.0 GHz 0.80 db Noise Figure at 5.5 GHz 13.2 db gain, +33 dbm OIP3 and +20.5
MMA043AA Datasheet 0.5 GHz 12 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier
MMA043AA Datasheet 0.5 GHz 12 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA:
500mW, 2% Tolerance Zener Diodes
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Low forward voltage Ultra small SMD plastic package Low capacitance Flat leads: excellent coplanarity and improved thermal behavior.
Rev. 01 14 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated
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