AT-41511, AT General Purpose, Low Noise NPN Silicon Bipolar Transistors. Data Sheet. Description. Features. Pin Connections and Package Marking
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1 AT-4111, AT-4133 General Purpose, Low Noise NPN Silicon Bipolar Transistors Data Sheet Description Avago s AT-4111 and AT-4133 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-4133 uses the 3 lead SOT-23, while the AT-4111 places the same die in the lower parasitic 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 4 micron emitter-to-emitter pitch of these transistors yields high performance products that can perform a multiplicity of tasks. The 14 emitter finger interdigitated geometry yields an intermediate-sized transistor with easy to match to impedances, low noise figure, and moderate power. Optimized for best performace from a to 8 volt bias supply, these transistors are also good performers at 2.7 V. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, or active mixer. An optimum noise match near ohms at 9 MHz makes these devices particularly easy to use as LNAs. Typical amplifier designs at 9 MHz yield 1 db noise figures with 1 db or more associated gain at a V, ma bias, with good gain and noise figure obtainable at biases as low as 2 ma. The AT-41 series bipolar transistors are fabricated using Avago s 1 GHz f T Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. Features General Purpose NPN Bipolar Transistor 9 MHz Performance: AT-4111: 1 db NF, 1. db G A AT-4133: 1 db NF, 14. db G A Characterized for 3,, and 8 Volt Use SOT-23 and SOT-143 SMT Plastic Packages Tape-and-Reel Packaging Option Available Lead-free Pin Connections and Package Marking EMITTER BASE BASE 41x COLLECTOR EMITTER SOT 143 (AT-4111) COLLECTOR 41x EMITTER SOT 23 (AT-4133) Notes: Top View. Package Marking provides orientation and identification. "x" is the date code.
2 AT-4111, AT-4133 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1. V CBO Collector-Base Voltage V 2 V CEO Collector-Emitter Voltage V 12 I C Collector Current ma P T Power Dissipation [2,3] mw 22 Thermal Resistance: [2] jc = C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. T Mounting Surface = 2 C. 3. Derate at 1.82 mw/ C for T C > 26 C. T j Junction Temperature C 1 T STG Storage Temperature C -6 to 1 Electrical Specifications, T A = 2 C AT-4111 AT-4133 Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max h FE Forward Current Transfer Ratio V CE = V I C = ma I CBO Collector Cutoff Current V CB = 3 V μa.2.2 I EBO Emitter Cutoff Current V EB = 1 V μa Characterization Information, T A = 2 C AT-4111 AT-4133 Symbol Parameters and Test Conditions Units Min Typ Min Typ NF Noise Figure f =.9 GHz db V CE = V, I C = ma f = 2.4 GHz G A Associated Gain f =.9 GHz db V CE = V, I C = ma f = 2.4 GHz 11 9 P 1dB Power at 1 db Gain Compression (opt tuning) f =.9 GHz dbm V CE = V, I C = 2 ma G 1dB Gain at 1 db Gain Compression (opt tuning) f =.9 GHz db V CE = V, I C = 2 ma IP 3 Output Third Order Intercept Point, f =.9 GHz dbm 2 2 V CE = V, I C =2 ma (opt tuning) S 21E 2 Gain in Ω system; V CE = V, I C = ma f =.9 GHz db f = 2.4 GHz
3 AT-4111, AT-4133 Typical Performance 3. 2 ma 3. 2 ma 3. NOISE FIGURE (db) ma 2, ma NOISE FIGURE (db) ma 1 ma ma NOISE FIGURE (db) ma 1 ma ma Figure 1. AT-4111 and AT-4133 Minimum Noise Figure vs. Frequency and Current at V CE = 2.7 V. Figure 2. AT-4111 and AT-4133 Minimum Noise Figure vs. Frequency and Current at V CE = V. Figure 3. AT-4111 and AT-4133 Minimum Noise Figure vs. Frequency and Current at V CE = 8 V , 2 ma PKG 11 PKG 11 G a PKG 11 (db) 1 1 ma 2 ma 1, 2 ma ma 2 ma PKG G a PKG 33 (db) G a (db) 1 1 PKG 33 1, 2 ma ma 1, 2 ma ma G a (db) 1 1 PKG 33 1, 2 ma ma 1, 2 ma ma.1 PKG Figure 4. AT-4111 and AT-4133 Associated Gain vs. Frequency and Current at V CE = 2.7 V. Figure. AT-4111 and AT-4133 Associated Gain vs. Frequency and Current at V CE = V. Figure 6. AT-4111 and AT-4133 Associated Gain vs. Frequency and Current at V CE = 8 V ma P 1 db (dbm) ma 1 ma ma P 1 db (dbm) ma 1 ma ma P 1 db (dbm) ma ma Figure 7. AT-4111 and AT-4133 P 1dB vs. Frequency and Bias at V CE = 2.7 V, with Optimal Tuning. Figure 8. AT-4111 and AT-4133 P 1dB vs. Frequency and Bias at V CE = V, with Optimal Tuning. Figure 9. AT-4111 and AT-4133 P 1dB vs. Frequency and Bias at V CE = 8 V, with Optimal Tuning. 3
4 AT-4111 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = ma AT-4111 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = ma Figure 1. AT-4111 Gains vs. Frequency at V CE = 2.7 V, I C = ma. AT-4133 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = ma AT-4133 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = ma Figure 11. AT-4133 Gains vs. Frequency at V CE = 2.7 V, I C = ma.
5 AT-4111 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = 2 ma AT-4111 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = 2 ma Figure 12. AT-4111 Gains vs. Frequency at V CE = 2.7 V, I C = 2 ma. AT-4133 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = 2 ma AT-4133 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 2.7 V, I C = 2 ma Figure 13. AT-4133 Gains vs. Frequency at V CE = 2.7 V, I C = 2 ma.
6 AT-4111 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = V, I C = ma AT-4111 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = V, I C = ma Figure 14. AT-4111 Gains vs. Frequency at V CE = V, I C = ma. AT-4133 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = V, I C = ma AT-4133 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = V, I C = ma Figure 1. AT-4133 Gains vs. Frequency at V CE = V, I C = ma.
7 AT-4111 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = V, I C = 2 ma AT-4111 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = V, I C = 2 ma Figure 16. AT-4111 Gains vs. Frequency at V CE = V, I C = 2 ma. AT-4133 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = V, I C = 2 ma AT-4133 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = V, I C = 2 ma Figure 17. AT-4133 Gains vs. Frequency at V CE = V, I C = 2 ma.
8 AT-4111 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = 1 ma AT-4111 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = 1 ma AT-4133 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = 1 ma Figure 18. AT-4111 Gains vs. Frequency at V CE = 8 V, I C = 1 ma. AT-4133 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = 1 ma Figure 19. AT-4133 Gains vs. Frequency at V CE = 8 V, I C = 1 ma.
9 AT-4111 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = 2 ma AT-4111 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = 2 ma Figure 2. AT-4111 Gains vs. Frequency at V CE = 8 V, I C = 2 ma. AT-4133 Typical Scattering Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = 2 ma AT-4133 Typical Noise Parameters, Common Emitter, Z o = Ω, V CE = 8 V, I C = 2 ma Figure 21. AT-4133 Gains vs. Frequency at V CE = 8 V, I C = 2 ma.
10 Ordering Information Part Numbers No. of Devices Comments AT-4111-BLKG AT-4133-BLKG 1 Bulk AT-4111-TR1G AT-4133-TR1G 3 7" Reel AT-4111-TR2G AT-4133-TR2G 1 13" Reel Package Dimensions SOT-23 Plastic Package e2 e1 SOT-143 Plastic Package e2 e1 B1 E XXX E1 E XXX E1 e L L B C e B C A1 D Notes: XXX-package marking Drawings are not to scale A SYMBOL A A1 B C D E1 e e1 e2 E L DIMENSIONS (mm) MIN MAX A1 D Notes: XXX-package marking Drawings are not to scale A SYMBOL A A1 B B1 C D E1 e e1 e2 E L DIMENSIONS (mm) MIN MAX For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2-29 Avago Technologies. All rights reserved. Obsoletes EN AV2-798EN - December 23, 29
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