3 V, SUPER MINIMOLD 900 MHz Si MMIC AMPLIFIER

Transcription

1 3 V, SUPER MINIMOLD 9 MHz Si MMIC AMPLIFIER FEATURES HIGH DENSITY SURFACE MOUNTING: pin super minimold or SOT-33 package GAIN: : Gs = 1 db TYP : Gs = 19 db TYP NOISE FIGURE: : NF = 3.3 db TYP : NF =.8 db TYP SUPPLY VOLTAGE: VCC =.7 to 3.3 V DESCRIPTION Gain, GS (db) GS GS GAIN vs. FREQUENCY VCC = 3. V NEC's and are Silicon RFIC's which are manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for cellular radio and other communication receivers. The /8TB are pin compatible and have comparable performance as the larger UPC77T/8T, so they are suitable for use as a replacement to help reduce system size. The IC's are housed in a pin super minimold or SOT-33 package. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. 1 ELECTRICAL CHARACTERISTICS (TA = C, ZL = ZS = Ω) PART NUMBER PACKAGE OUTLINE SO SO SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ICC Circuit Current (no signal)vcc = 3. V ma VCC = ma GS Small Signal Gain, f = 9 MHz, VCC = 3. V db f = 9 MHz, VCC = db. 11. fl 1 Lower Limit Operating Frequency, VCC = 3. V GHz.. VCC = GHz. fu Upper Limit Operating Frequency, VCC = 3. V GHz VCC = GHz PSAT Saturated Output Power, f = 9 MHz, VCC = 3. V dbm f = 9 MHz, VCC = dbm -1-1 NF Noise Figure, f = 9 MHz, VCC = 3. V db f = 9 MHz, VCC = db.. RLIN Input Return Loss, f = 9 MHz, VCC = 3. V db f = 9 MHz, VCC = db 11 1 RLOUT Output Return Loss, f = 9 MHz, VCC = 3. V db f = 9 mhz, VCC = db 13 1 ISOL Isolation, f = 9 MHz, VCC = 3. V db 3 3 f = 9 MHz, VCC = db 3 3 OIP3 SSB Output Third Order Intercept, POUT = - dbm f1 = 9 MHz, f = 9 MHz, VCC = 3. V dbm -3-1 f1 = 9 MHz, f = 9 MHz, VCC = dbm -1 - RTH (J-A) Thermal Resistance (Junction to Ambient) Mounted on a x x 1. mm epoxy glass PWB C/W 3 3 Note: 1.The gain at fl is 3 db down from the gain at 9 MHz..The gain at fu is 3 db down from the gain at 9 MHz. California Eastern Laboratories

2 , ABSOLUTE MAXIMUM RATINGS 1 (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V. ICC Total Supply Current ma 1 PIN Input Power dbm RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS MIN TYP MAX VCC Supply Voltage V TOP Operating Temperature C - 8 PT Total Power Dissipation mw TOP Operating Temperature C - to +8 TSTG Storage Temperature C - to +1 TEST CIRCUIT Notes: 1. Operation in excess of any one of these parameters may result in permanent damage.. Mounted on a x x 1. mm epoxy glass PWB (TA = 8 C). 1 pf C3 VCC Ω IN C1 1 C Ω OUT 1 pf, 3, 1 pf TYPICAL PERFORMANCE CURVES (TA = C) CURRENT vs. SUPPLY VOLTAGE CURRENT vs. OPERATING TEMPERATURE 1 1 Circuit Current, ICC (ma) Gain, GS (db) Supply Voltage, VCC (V) GAIN vs. FREQUENCY AND TEMPERATURE - C + C +8 C 1 3 Gain, GS (db) Circuit Current, ICC (ma) Operating Temperature TOP ( C) GAIN AND NOISE FIGURE vs. FREQUENCY 3. V VCC = 3. V V Noise Figure, NF (db) Vcc = 3. V Icc = ma.7 V 3. V

3 , TYPICAL PERFORMANCE CURVES (TA = C) RETURN LOSS vs. FREQUENCY ISOLATION vs. FREQUENCY RLout (VCC = 3. V) RLin (VCC = ) Input Return Loss, RLIN (db) Output Return Loss, RLOUT (db) Output Power, POUT (dbm) RLin (VCC = 3. V) VCC = 3. V ICC = ma Frequency, f (GHZ) POWER vs. FREQUENCY RLout (VCC = ) 1 OUTPUT POWER vs. INPUT POWER AND VOLTAGE f = 9 MHZ PSAT P1dB 3. V.7 V Output Power, POUT (dbm) Output Power (dbm) Isolation, ISOL (db) 1 3 VCC = 3. V Frequency, f (GHZ) POWER vs. FREQUENCY Psat VCC = ICC = 3 ma P1dB 1 OUTPUT POWER vs. INPUT POWER AND TEMPERATURE VCC = 3. V f = 9 MHZ - C + C +8 C - C TA = +8 C + C Input Power PIN (dbm) Input Power PIN (dbm)

4 , TYPICAL PERFORMANCE CURVES (TA = C) GAIN vs. FREQUENCY AND TEMPERATURE GAIN and NOISE FIGURE vs. FREQUENCY - C Gain, GS (db) C +8 C Gain, GS (db) 1 1 VCC =.7 V VCC = VCC =.7 V VCC = 3. V VCC = 3. V 3 Noise Figure NF (db) VCC = 3. V ICC = ma Frequency, f (GHz) ISOLATION vs. FREQUENCY RETURN LOSS vs. FREQUENCY RLin (VCC = ) Isolation, ISOL (db) VCC = 3. V Input Return Loss RLin (db) Output Return Loss RLout (db) 1 3 RLOUT (VCC = ) RLIN (VCC = 3. V) RLout (VCC = 3. V) VCC = 3. V Frequency, f (GHZ) Frequency, f (GHZ) POWER vs. FREQUENCY POWER vs. FREQUENCY Psat - 8. P1dB PSAT -1. P1dB -1. VCC = 3. V ICC = ma 1 -. VCC = ICC = 3. ma 1

5 , TYPICAL PERFORMANCE CURVES (TA = C) OUTPUT POWER vs. INPUT POWER AND VOLTAGE OUTPUT POWER vs. INPUT POWER AND TEMPERATURE TA = +8 C V 3. V C + C TA = +8 C + C - C -3 f = 9 MHZ VCC = 3. V f = 9 MHZ Input Power, PIN (dbm) Input Power, PIN (dbm) PIN DESCRIPTION Pin Pin Applied No. Name Voltage Description Internal Equivalent Circuit (V) 1 Input.8 1 Signal input pin. An internal matching.8 circuit, configured with resistors, enables Ω connection over a wide bandwidth. A multi-feedback circuit is designed to cancel the deviations of hfe and resistance. This pin must be coupled to the signal source with a blocking capacitor. 1 IN VCC OUT Output.79 1 Signal output pin. An internal matching.7 circuit, configured with resistors, enables Ω connection over a wide bandwidth. This pin must be coupled to the output load with a blocking capacitor. VCC.7 to 3.3 Power supply pin. This pin should be externally equipped with a bypass capacitor to minimize ground impedance. 3 GND GND GND Ground pin. This pin should be connected 3 to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to minimize impedance difference. The above diagram is for the. The resistor marked with a star does not exist in the UPC 78TB. Notes: 1....

6 , TYPICAL SCATTERING PARAMETERS (TA = C) 1. G 3. G. G.1 G.1 G 1. G 3. G. G S11 Coordinates in Ohms Frequency in GHz VCC = VOUT = 3. V S VCC = VOUT = 3. V, ICC =. ma FREQUENCY S11 S1 S1 S GHz MAG ANG MAG ANG MAG ANG MAG ANG K

7 , TYPICAL SCATTERING PARAMETERS (TA = C).1 G 1. G. G 3. G.1 G 1. G S11 VCC = VOUT = 3. V, ICC =. ma Coordinates in Ohms Frequency in GHz VCC = VOUT = 3. V S FREQUENCY S11 S1 S1 S GHz MAG ANG MAG ANG MAG ANG MAG ANG K

8 , OUTLINE DIMENSIONS (Units in mm) PIN CONNECTIONS PACKAGE OUTLINE S (Top View) (Top View) (Bottom View).1±.1 1.±.1.± (All Leads).9±.1..13± INPUT. GND 3. GND. OUTPUT. GND. VCC C1S *Marking is an example of 1 to.1 SYSTEM APPLICATION EXAMPLE DIGITAL CELLULAR SYSTEM BLOCK DIAGRAM Example of 9 MHz Band Digital Cellular Phone RX DEMO I Q SW PSC+PLL PLL TX PA φ 9 I Q, applicable ORDERING INFORMATION PART NUMBER MARKING QTY -E3-A C1S 3K/Reel -E3-A C1T 3K/Reel Note: Embossed Tape, 8 mm wide. Pins1, and 3 face perforated side of tape. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 9 Patrick Henry Drive Santa Clara, CA (8) Telex FAX (8) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE /11/

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