Low Current, High Performance NPN Silicon Bipolar Transistor. Technical Data AT AT-32033

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1 Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-311 AT-333 Features High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation 9 MHz Performance: AT-311: 1 db NF, 14 db G A AT-333: 1 db NF, 12. db G A Characterized for End-Of- Life Battery Use (2.7 V) SOT-23 and SOT-143 SMT Plastic Packages Tape-And-Reel Packaging Option Available [1] Outline Drawing EMITTER BASE BASE 3 COLLECTOR EMITTER SOT-143 (AT-311) COLLECTOR 3 EMITTER SOT-23 (AT-333) Description Hewlett Packard s AT-311 and AT-333 are high performance NPN bipolar transistors that have been optimized for maximum f t at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-333 uses the 3 lead SOT-23, while the AT-3 11 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents. Optimized performance at 2.7 V makes these devices ideal for use in 9 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 9 MHz yield 1.2 db noise figures with 12 db or more associated gain at a 2.7 V, bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 ma makes these devices a good fit for 9 MHz pager applications. Voltage breakdowns are high enough for use at volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett Packard s 1 GHz f t, 3 GHz f MAX Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices. 1. Refer to Tape-and-Reel Packaging for Semiconductor Devices E

2 AT-311, AT-333 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1. V CBO Collector-Base Voltage V 11 V CEO Collector-Emitter Voltage V. I C Collector Current ma 32 P T Power Dissipation [2, 3] mw T j Junction Temperature C T STG Storage Temperature C -6 to Thermal Resistance [2] : θ jc = C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. T Mounting Surface = C. 3. Derate at 1.82 mw/ C for T C > 4 C. Electrical Specifications, T A = C AT-311 AT-333 Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max. NF G A h FE I CBO I EBO Noise Figure V CE = 2.7 V, I C = f =.9 GHz db 1. [1] 1.3 [1] 1. [2] 1.3 [2] Associated Gain V CE = 2.7 V, I C = f =.9 GHz db 12. [1] 14 [1] 11 [2] 12. [2] Forward Current Transfer Ratio V CE = 2.7 V, I C = Collector Cutoff Current V CB = 3 V µa.2.2 Emitter Cutoff Current V EB = 1 V µa Notes: 1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss =.3 db; output loss =.3 db. 2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss =.3 db; output loss =.3 db. 1 pf V BB RF IN W = 1 CKT A: L = 38 CKT B: L = 38 W = 1 L = 187 TEST CIRCUIT BOARD MATL =.62" FR-4 (ε = 4.8) W = 3 L = 6 W = 3 L = 6 W = 1 L = 187 CKT A: W = 3 L = x 2 CKT B: W = 3 L = 6 V CC NOT TO SCALE 1 pf CKT A: Ω CKT B: Ω RF OUT W = 1 CKT A: L = CKT B: L = 8 DIMENSIONS IN MILS Figure 1. Test Circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. 4-4

3 Characterization Information, T A = C AT-311 AT-333 Symbol Parameters and Test Conditions Units Typ. Typ. P 1dB G 1dB Power at 1 db Gain Compression (opt tuning) V CE = 2.7 V, I C = ma f =.9 GHz dbm Gain at 1 db Gain Compression (opt tuning) V CE = 2.7 V, I C = ma f =.9 GHz db 16. IP 3 Output Third Order Intercept Point (opt tuning) V CE = 2.7 V, I C = ma f =.9 GHz dbm S 21 E Gain in Ω System V CE = 2.7 V, I C = f =.9 GHz db NOISE FIGURE (db) ma 1 ma ma Ga (db) 1 1 ma 1 ma ma Ga (db) 1 1 ma 1 ma ma Figure 2. AT-311 and AT-333 Minimum Noise Figure vs. Frequency and Current at V CE = 2.7 V. Figure 3. AT-311 Associated Gain at Optimum Noise Match vs. Frequency and Current at V CE = 2.7 V. Figure 4. AT-333 Associated Gain at Optimum Noise Match vs. Frequency and Current at V CE = 2.7 V. P 1dB (dbm) 1-1 ma ma ma ma ma ma Figure. AT-311 and AT-333 Power at 1 db Gain Compression vs. Frequency and Current at V CE = 2.7 V. Figure 6. AT db Compressed V CE = 2.7 V. Figure 7. AT db Compressed V CE = 2.7 V. 4-

4 AT-311, AT-333 Typical Performance P 1dB (dbm) ma ma ma ma ma ma Figure 8. AT-311 and AT-333 Power at 1 db Gain Compression vs. Frequency and Current at V CE = V. Figure 9. AT db Compressed V CE = V. Figure 1. AT db Compressed V CE = V P 1dB (dbm) Figure 11. AT-311 and AT-333 Power at 1 db Gain Compression vs. Frequency and Current at V CE = 1 V. Figure 12. AT db Compressed V CE = 1 V. Figure 13. AT db Compressed V CE = 1 V Ga (dbm) 1 - Ga NF. 1 NOISE FIGURE (db) Ga (dbm) 1-1. Ga 1. NF. 1 NOISE FIGURE (db) IP3 (dbm) 1 1 ma ma TEMPERATURE ( C) TEMPERATURE ( C) FREQUENCY (MHz) Figure 14. AT-311 Noise Figure and Associated Gain at V CE = 2.7 V, I C = 2 ma vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded). Figure. AT-333 Noise Figure and Associated Gain at V CE = 2.7 V, I C = 2 ma vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded). Figure 16. AT-311 and AT-333 Third Order Intercept vs. Frequency and Bias at V CE = 2.7 V, with Optimal Tuning. 4-6

5 AT-311 Typical Scattering Parameters, Common Emitter, Zo = Ω V CE = 1 V, I C = 1 ma AT-311 Typical Noise Parameters, Common Emitter, Zo = Ω, 1 V, I C = 1 ma AT-333 Typical Scattering Parameters, Common Emitter, Zo = Ω. [1] GHz noise parameter values are extrapolated, not measured. AT-333 Typical Noise Parameters, Common Emitter, Zo = Ω, 1 V, I C = 1 ma. [1] GHz noise parameter values are extrapolated, not measured. 4-7 V CE = 1 V, I C = 1 ma Figure 17. AT-311 Gains vs. Frequency at V CE = 1 V, I C = 1 ma Figure 18. AT-333 Gains vs. Frequency at V CE = 1 V, I C = 1 ma.

6 AT-311 Typical Scattering Parameters, Common Emitter, Zo = Ω V CE = 2.7 V, I C = AT-311 Typical Noise Parameters, Common Emitter, Zo = Ω, 2.7 V, I C =. [1] GHz noise parameter values are extrapolated, not measured. AT-333 Typical Scattering Parameters, Common Emitter, Zo = Ω V CE = 2.7 V, I C = AT-333 Typical Noise Parameters, Common Emitter, Zo = Ω, 2.7 V, I C = Figure 19. AT-311 Gains vs. Frequency at V CE = 2.7 V, I C =. 3. [1] GHz noise parameter values are extrapolated, not measured Figure. AT-333 Gains vs. Frequency at V CE = 2.7 V, I C =.

7 AT-311 Typical Scattering Parameters, Common Emitter, Zo = Ω V CE = 2.7 V, I C = ma AT-311 Typical Noise Parameters, Common Emitter, Zo = Ω, 2.7 V, I C = ma Freq. F min R n. [1] GHz noise parameter values are extrapolated, not measured. AT-333 Typical Scattering Parameters, Common Emitter, Zo = Ω Figure 21. AT-311 Gains vs. Frequency at V CE = 2.7 V, I C = ma. V CE = 2.7 V, I C = ma AT-333 Typical Noise Parameters, Common Emitter, Zo = Ω, 2.7 V, I C = ma 3. [1] GHz noise parameter values are extrapolated, not measured Figure 22. AT-333 Gains vs. Frequency at V CE = 2.7 V, I C = ma.

8 AT-311 Typical Scattering Parameters, Common Emitter, Zo = Ω V CE = V, I C = AT-311 Typical Noise Parameters, Common Emitter, Zo = Ω, 2.7 V, I C =. [1] GHz noise parameter values are extrapolated, not measured. AT-333 Typical Scattering Parameters, Common Emitter, Zo = Ω Figure 23. AT-311 Gains vs. Frequency at V CE = V, I C =. V CE = V, I C = AT-333 Typical Noise Parameters, Common Emitter, Zo = Ω, V, I C =. [1] GHz noise parameter values are extrapolated, not measured Figure 24. AT-333 Gains vs. Frequency at V CE = V, I C =.

9 AT-311 Typical Scattering Parameters, Common Emitter, Zo = Ω V CE = V, I C = ma AT-311 Typical Noise Parameters, Common Emitter, Zo = Ω, V, I C = ma. [1] GHz noise parameter values are extrapolated, not measured. AT-333 Typical Scattering Parameters, Common Emitter, Zo = Ω Figure. AT-311 Gains vs. Frequency at V CE = V, I C = ma. V CE = V, I C = ma AT-333 Typical Noise Parameters, Common Emitter, Zo = Ω, V, I C = ma. [1] GHz noise parameter values are extrapolated, not measured Figure 26. AT-333 Gains vs. Frequency at V CE = V, I C = ma.

10 Ordering Information Part Number Increment Comments AT-311-BLK 1 Bulk AT-311-TR1 3 7" Reel AT-333-BLK 1 Bulk AT-333-TR1 3 7" Reel Package Dimensions SOT-143 Plastic Package SOT-23 Plastic Package PACKAGE MARKING CODE.6 (.24).4 (.18) E B XXX C E 2.4 (.8) 1.78 (.7).92 (.36).78 (.31) 1.4 (.) 1. (.47).4 (.21).37 (.) 2.6 (.14) 2.1 (.83) 1.2 (.4).89 (.3) PACKAGE MARKING CODE.6 (.24).4 (.18) B C XXX 2.4 (.8) 1.78 (.7).4 (.21).37 (.) E 1.4 (.) 1. (.47) 2.6 (.14) 2.1 (.83) TOP VIEW TOP VIEW 3.6 (.1) 2.8 (.11) 1.2 (.41).8 (.33). (.6).9 (.3) 3.6 (.1) 2.8 (.11) 1.2 (.41).8 (.33).2 (.6).66 (.3) SIDE VIEW.1 (.4).13 (.).69 (.27).4 (.18) END VIEW.1 (.4).13 (.) SIDE VIEW.69 (.27).4 (.18) END VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) DIMENSIONS ARE IN MILLIMETERS (INCHES) 4-62

General Purpose, Low Noise NPN Silicon Bipolar Transistor. Technical Data AT AT-41533

General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-411 AT-433 Features General Purpose NPN Bipolar Transistor 9 MHz Performance: AT-411: 1 db NF,. db G A AT-433: 1 db NF, 14. db