CGH40006S. 6 W, RF Power GaN HEMT, Plastic APPLICATIONS FEATURES

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Hugh Mitchell
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Rev 3.1 April 2017 CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits.

1 Rev 3.1 April 2017 CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package. Package Types: PN s: CGH40006S FEATURES APPLICATIONS Up to 6 GHz Operation 13 db Small Signal Gain at 2.0 GHz 11 db Small Signal Gain at 6.0 GHz 8 W typical at P IN = 32 dbm 65 % Efficiency at P IN = 32 dbm 28 V Operation 3mm x 3mm Package 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. 1

2 Absolute Maximum Ratings (not simultaneous) at 25 C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V DSS 84 Volts 25 C Gate-to-Source Voltage V GS -10, +2 Volts 25 C Storage Temperature T STG -65, +150 C Operating Junction Temperature T J 175 C Maximum Forward Gate Current I GMAX 2.1 ma 25 C Maximum Drain Current 1 I DMAX 0.75 A 25 C Soldering Temperature 2 T S 260 C Thermal Resistance, Junction to Case 3,4 R θjc 10.1 C/W 85 C Case Operating Temperature 3,4 T C -40, +150 C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at 3 Measured for the CGH40006S at P DISS = 8 W. 4 T C = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. The RTH for Cree s demonstration amplifier, CGH40006S-AMP1, with 13 (Ø20 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 5.1 C. The total Rth from the heat sink to the junction is 10.1 C +5.1 C = 15.2 C/W. Electrical Characteristics (T C = 25 C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics 1 Gate Threshold Voltage V GS(th) V DC V DS = 10 V, I D = 2.1 ma Gate Quiescent Voltage V GS(Q) -2.7 V DC V DS = 28 V, I D Saturated Drain Current I DS A V DS = 6.0 V, V GS = 2.0 V Drain-Source Breakdown Voltage V BR 120 V DC V GS = -8 V, I D = 2.1 ma RF Characteristics 2 (T C = 25 C, F 0 = 5.8 GHz unless otherwise noted) Small Signal Gain G SS db V DD Power Output at P IN = 30 dbm P OUT W V DD Drain Efficiency 3 η % V DD, P IN = 30 dbm Output Mismatch Stress VSWR 10 : 1 Y No damage at all phase angles, V DD, P IN = 32 dbm Dynamic Characteristics Input Capacitance C GS 2.7 pf V DS = 28 V, V gs = -8 V, f = 1 MHz Output Capacitance C DS 0.8 pf V DS = 28 V, V gs = -8 V, f = 1 MHz Feedback Capacitance C GD 0.1 pf V DS = 28 V, V gs = -8 V, f = 1 MHz Notes: 1 Measured on wafer prior to packaging. 2 Measured in Cree s narrow band production test fixture AD This fixture is designed for high volume test at 5.8 GHz and may not show the full capability of the device due to source inductance and thermal performance. The demonstration amplifier, CGH40006S-AMP1, is a better indicator of the true RF performance of the device. 3 Drain Efficiency = P OUT / P DC Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 2 CGH40006S Rev 3.1

3 Typical Performance 16 Small Signal Gain vs Frequency at 28 V of the CGH40006S in the CGH40006S-AMP Gain (db B) CGH40006S - S Frequency (GHz) 0 Input & Output Return Losses vs Frequency at 28 V of the CGH40006S in the CGH40006S-AMP Gain (db B) CGH40006S - S11 CGH40006S - S Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 3 CGH40006S Rev 3.1

4 Typical Performance Power Gain vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 V DD GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz 12 Gain (d db) Output Power (dbm) 70% Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 V DD 60% 50% 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Drain Effic ciency 40% 30% 20% 10% 0% Output Power (dbm) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 4 CGH40006S Rev 3.1

5 Typical Performance Power Gain vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 V DD Gain (d db) GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Input Power (dbm) 100% 90% 80% 70% Drain Efficiency vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 V DD 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Drain Effic ciency 60% 50% 40% 30% 20% 10% 0% Input Power (dbm) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 5 CGH40006S Rev 3.1

6 Typical Performance 10 Power Gain vs Frequency of the CGH40006S in the CGH40006S-AMP1 at P IN = 32 dbm, V DD = 28 V db) Gain (d Frequency (GHz) Output Power vs Frequency of the CGH40006S in the CGH40006S-AMP1 at P IN = 32 dbm, V DD = 28 V Output Pow wer (W) Frequency (GHz) 70% Drain Efficiency vs Frequency of the CGH40006S in the CGH40006S-AMP1 at P IN = 32 dbm, V DD = 28 V 60% 50% ciency Drain Effic 40% 30% 20% 10% 0% Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 6 CGH40006S Rev 3.1

7 Typical Performance Third Order Intermodulation Distortion vs Average Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 V DD = 60 ma GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz IM3 (db Bc) Output Power (dbm) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Moisture Sensitivity Level (MSL) Classification Parameter Symbol Level Test Methodology Moisture Sensitivity Level MSL 3 (168 hours) IPC/JEDEC J-STD-20 Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 7 CGH40006S Rev 3.1

8 Typical Performance Simulated Maximum Available Gain and K Factor of the CGH40006S V DD Note 1. On a 20 mil thick PCB. Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006S V DD Minimum Noise Figure (db) Noise Resistance (Ohms) MAG (db) K Factor Note 1. On a 20 mil thick PCB. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 8 CGH40006S Rev 3.1

9 CGH40006S CW Power Dissipation De-rating Curve Power Dissipation (W) Note Maximum Case Temperature ( C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load j j j j j j j j j j j j2.07 Note 1. V DD = 28V, I DQ = 100mA in the package. Note 2. Optimized for power gain, P SAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Note ph source inductance is assumed between the package and RF ground (20 mil thick PCB). Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 9 CGH40006S Rev 3.1

CGH40006S-AMP1 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, AIN, 0505, 470 Ohms ( 5% tolerance) 1 R2 RES, AIN, 0505, 50 Ohms ( 5% tolerance) 1 R3 RES, AIN,

10 CGH40006S-AMP1 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, AIN, 0505, 470 Ohms ( 5% tolerance) 1 R2 RES, AIN, 0505, 50 Ohms ( 5% tolerance) 1 R3 RES, AIN, 0505, 360 Ohms ( 5% tolerance) 1 C1 CAP, 1.3 pf +/-0.1 pf, 0603, ATC 600S 1 C2 CAP, 2.7 pf +/-0.25 pf, 0603, ATC 600S 1 C10 CAP, 3.6 pf +/-0.1 pf, 0603, ATC 600S 1 C4,C11 CAP, 8.2 pf +/-0.25, 0603, ATC 600S 2 C6,C13 CAP, 470 pf +/-5%, 0603, 100 V 2 C7,C14 CAP, pf, CER, 100V, X7R, C8 CAP, 10 uf, 16V, SMT, TANTALUM 1 C15 CAP, 1.0 uf +/-10%, CER, 100V, X7R, C16 CAP, 33 uf, 100V, ELECT, FK, SMD 1 J3,J4 CONN, SMA, STR, PANEL, JACK, RECP 2 J1 HEADER RT>PLZ.1CEN LK 5POS 1 - PCB, RO5880, THK 1 Q1 CGH40006S 1 CGH40006S-AMP1 Demonstration Amplifier Circuit Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 10 CGH40006S Rev 3.1

11 CGH40006S-AMP1 Demonstration Amplifier Circuit Schematic CGH40006S-AMP1 Demonstration Amplifier Circuit Outline Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 11 CGH40006S Rev 3.1

12 Typical Package S-Parameters for CGH40006S (Small Signal, V DS, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S MHz MHz MHz MHz MHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz To download the s-parameters in s2p format, go to the CGH40006S Product Page and click on the documentation tab. Note 2. On a 20 mil thick PCB. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 12 CGH40006S Rev 3.1

13 Product Dimensions CGH40006S (Package Type ) Pin Input/Output 1 GND 2 RF IN 3 GND 4 GND 5 RF OUT 6 GND Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 13 CGH40006S Rev 3.1

250 parts / reel Copyright 2010-2017 All rights reserved.

15 Product Ordering Information Order Number Description Unit of Measure CGH40006S GaN HEMT Each CGH40006S-AMP1 Test board with GaN HEMT installed Each CGH40006S-TR Delivered in Tape and Reel 250 parts / reel Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 15 CGH40006S Rev 3.1

16 Disclaimer Specifications are subject to change without notice. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Sarah Miller Marketing & Export Cree, RF Components Ryan Baker Marketing Cree, Wireless Devices Tom Dekker Sales Director Cree, Wireless Devices Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 16 CGH40006S Rev 3.1

CGH W, RF Power GaN HEMT APPLICATIONS FEATURES

CGH W, RF Power GaN HEMT APPLICATIONS FEATURES Rev 4.0 May 2015 CGH40025 25 W, RF Power GaN HEMT Cree s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a