Monolithic Amplifier CMA-252LN+ Ultra Low Noise, High IP to 2.5 GHz. The Big Deal

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1 Ultra Low, High IP3 Monolithic Amplifier 50Ω The Big Deal 1.5 to 2.5 GHz Ceramic, Hermetically Sealed, Nitrogen filled Low profile case,.045 high Ultra Low High Gain, High IP3 Class 1B HBM ESD (500V) CASE STYLE: DL1721 Product Overview Mini-Circuits is a E-PHEMT based Ultra-Low MMIC Amplifier with a unique combinations of low noise and high IP3 making this amplifier ideal for sensitive high dynamic range receiver applications. This design operates on a single 3 to 4V supply. The MMIC amplifier is bonded to a multilayer integrated LTCC substrate and then hermetically sealed under a controlled nitrogen atmosphere with goldplated covers and eutectic AuSn solder. These amplifiers have been tested to MIL requirements for gross leak, fine leak, thermal shock, vibration, acceleration, mechanical shock, and HTOL. Key Features Feature Advantages Ultra Low, 0.8 db at 1.8 GHz Excellent noise figure performance. Increases signal to noise ratio. High IP3, +29 dbm at 1.8 GHz Combining Low and High IP3 makes this MMIC amplifier ideal for use in Low Receiver Front End (RFE) as it gives the user advantages at both ends of the dynamic range: sensitivity & two-tone IM performance. Adjustable Current Provides users ability to set current consumption over a wide range from 25 to 80 ma. Ceramic Hermetic Package Low inductance, repeatable performance, excellent reliability Max Input Power, +27 dbm Ruggedized design operates up to high input powers often seen at Receiver inputs eliminating the need for an external limiter. High Reliability Low, small signal operating current of 57 ma nominal maintains junction temperatures typically below 100 C at 85 C ground lead temperature. Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com Page 1 of 6

2 Ultra Low, High IP3 Monolithic Amplifier Product Features Low, 0.8 db at 1.8 GHz High IP3, dbm typ. at 1.8 GHz P 17 dbm typ. at 1.8 GHz Adjustable Current, 25 to 80 ma Adjustable Gain, ±1.5 db Active Bias Small size - 3mm x 3mm x 1.14mm Ceramic, hermetic, Nitrogen filled No external matching components required Typical Applications Base station infrastructure Satellite Communication (Inmarsat) LTE GPS Tactical Air Navigation GHz CASE STYLE: DL1721 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications General Description The amplifier is fabricated using E-PHEMT technology and offers extremely high dynamic range with ultra low noise figure and good input and output return loss. Terminal finish is Ni-Pd-Au and it has repeatable performance from lot to lot due to fully automated, tightly controlled semiconductor and assembly processes. simplified schematic and pad description Bias Feedback Bias RF Gnd RF In NC RF-IN ,5,7 paddle 2 Ground RF-Out and DC-IN RF-Ground Function Pad Number Description RF IN 3 Connects to RF input via C1 and Pad 2 via L1 RF-OUT 6 Connects to RF out via C2, Pad 8 via R1, and C3 RF-Ground 2 Connects to ground via C4 and Pad 3 via L1 Bias 1 Connects to Supply voltage (Vs) via Rbias Feedback 8 Connected to pads 6, 1 via R1 and C3 Ground 7 & paddle Connects to ground Not connected 4,5 Recommend connection to ground GND Feed Gnd RF NC Back Out, DC Top View * Enhancement mode pseudomorphic High Electron Mobility Transistor. Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com REV. B M5058 BT/CP Page 2 of 6

3 Monolithic E-PHEMT MMIC Amplifier Electrical Specifications (1) at 25 C, unless noted Parameter (1) Measured on Mini-Circuits Characterization test board TB See Characterization Test Circuit (Fig. 1) R1=825Ω, R bias =619Ω (2) Current increases at P (3) (Current at 85 C - Current at -45 C)/1 Condition (GHz) Vs=4V Vs=3V Min. Typ. Max. Typ. Frequency Range GHz Gain db Input db db db compression (2) dbm IP dbm Device Operating Voltage V Device Operating Current at typ. voltage (2) ma DC Current Variation Vs. Temp. at typical voltage (3) µa/ C DC Current Variation Vs. Voltage ma/mv Thermal Resistance C/W Units db DC Current Histogram at Vs=4V Absolute Maximum Ratings (4) Parameter Ratings Operating Temperature (ground lead) -55 C to 105 C Storage Temperature -65 C to 125 C Junction Temperature 0 C Total Power Dissipation 0.55 W Input Power (CW), Vs=3V or 4V +25 dbm (5 min. max) + dbm (continuos) DC Voltage 5.5V (5) Permanent damage may occur if any of these limits are exceeded. Electrical maximum ratings are not intended for continuous normal operation Current (ma) Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com Page 3 of 6

4 Monolithic E-PHEMT MMIC Amplifier Recommended Application and Characterization Test Circuit Rbias ,5,7, paddle TB-759+ Fig 1. Application and Characterization circuit Note: This block diagram is used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-759+) Gain, loss, power at compression (P1 db), output IP3 (OIP3) and noise figure measured using Agilent s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and loss: Pin= -25dBm 2. IP3 (OIP3): Two tones, spaced 2.5 MHz apart, 2 dbm/tone at output. Suggested PCB Layout (PL-405) Typical Device Current vs Rbias (at R1=825 ohms) Vs=4V Vs=3V 70 Current (ma) Rbias (Ohms) Product Marking MCL CMA- 252LN+ DC YYWW ceramic body model Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com Page 4 of 6

5 Monolithic E-PHEMT MMIC Amplifier Adjustable Gain Performance (vs. R1) at Vs=4V S21Amplitude (db) S21 (Amplitude,dB) Vs. Frequency and R1 Values 825 Ohms 2740 Ohms 274 Ohms 57.6 Ohms MHz S11 Amplitude (db) S11 (Amplitude,dB) Vs. Frequency and R1 Values 825 Ohms 2740 Ohms 274 Ohms 57.6 Ohms MHz S22 Amplitude (db) S22 (Amplitude,dB) Vs. Frequency and R1 Values 825 Ohms 2740 Ohms 274 Ohms 57.6 Ohms MHz NF (db) (db) Vs. Frequency and R1 Values Ohms 2740 Ohms Ohms 57.6 Ohms MHz Adjustable Gain Performance (vs. R1) at Vs=3V S21 Amplitude (db) S21 (Amplitude, db) vs. Frequency and R! Values Ohms 2740 Ohms Ohms 57.6 Ohms MHz S21 Amplitude (db) S11 (Amplitude, db) vs. Frequency and R1 Values Ohms 2740 Ohms Ohms 57.6 Ohms MHz S22 Amplitude (db) S22 (Amplitude, db) vs. Frequency and R1 Values Ohms 2740 Ohms Ohms 57.6 Ohms MHz NF (db) (db) vs. Frequency and R1 Values Ohms 2740 Ohms Ohms 57.6 Ohms MHz Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com Page 5 of 6

6 Monolithic E-PHEMT MMIC Amplifier Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Data Table Performance Data Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style DL1721 Ceramic package, exposed paddle, Terminla finish: NiPdAu Tape & Reel F66-1 Standard quantities available on reel 7 reels with, 50, 100, 0, 500 or 1K, 2K devices. Suggested Layout for PCB Design Evaluation Board Environmental Ratings PL-406 TB-759+ ENV-68 ESD Rating Human Body Model (HBM): Class 1A (250 to <1000V) in accordance with ANSI/ESD STM Machine Model (MM): Class M1 (pass 25V) in accordance with ANSI/ESD STM MSL Rating Moisture Sensitivity: MSL1 (these parts are hermetic, air cavity and therefore, MSL ratings do not strictly apply. For handling purpose, use MSL1) Qualification Testing Test Description Test Method/Process Results 1 Hermeticity (fine and gross leak) MIL-STD-2 Method 112, Cond. C & D Pass 2 Acceleration, Kg, Y1 Direction MIL-STD-883 Method 01 Cond. E Pass 3 Vibration, 10-00Hz sine, g, 3 axis MIL-STD-2 Method 4, Cond. D Pass 4 Mechanical shock MIL-STD-2 Method 213, Cond. A Pass 5 PIND G Hz MIL-STD-750 Method 52.2 Pass 6 Temp Cycle -55C/+125C, 1000 Cycles MIL-STD-2 Method 107 Pass 7 Autoclave, 121C, RH 100%, Psig, 96 hrs JESD22-A102C Pass 8 HTOL, 1000hrs, 105C at rated Voltage condition MIL-STD-2 Method 108, Cond. D Pass 9 Bend Test JESD22-B113 Pass 10 Resistance to soldering heat, 3x reflow, 260C peak JESD22-B102 Pass 11 Drop Test JESD22-B111 Pass 12 Adhesion Strength Push Test>10 lb Pass Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms ); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com Page 6 of 6

7 NOTE: Use PDF Bookmarks to view DATA at required conditions Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 4.00V, Id = Temperature = +25 C FREQ Gain Isolation Input Stability Page 1 of 18

8 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 3.50V, Id = Temperature = +25 C FREQ Gain Isolation Input Stability Page 2 of 18

9 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 4.50V, Id = Temperature = +25 C FREQ Gain Isolation Input Stability Page 3 of 18

10 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 4.00V, Id = Temperature = -45 C FREQ Gain Isolation Input Stability Page 4 of 18

11 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 3.50V, Id = Temperature = -45 C FREQ Gain Isolation Input Stability Page 5 of 18

12 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 4.50V, Id = Temperature = -45 C FREQ Gain Isolation Input Stability Page 6 of 18

13 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 4.00V, Id = Temperature = +85 C FREQ Gain Isolation Input Stability Page 7 of 18

14 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 3.50V, Id = Temperature = +85 C FREQ Gain Isolation Input Stability Page 8 of 18

15 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 4.50V, Id = Temperature = +85 C FREQ Gain Isolation Input Stability Page 9 of 18

16 NOTE: Use PDF Bookmarks to view DATA at required conditions Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 3.00V, Is = Temperature = +25 C FREQ Gain Isolation Input Stability Page 10 of 18

17 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 2.70V, Is = Temperature = +25 C Input FREQ Gain Isolation Stability Page 11 of 18

18 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 3.V, Is = Temperature = +25 C FREQ Gain Isolation Input Stability Page 12 of 18

19 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 3.00V, Is = Temperature = -45 C Input FREQ Gain Isolation Stability Page 13 of 18

20 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 2.70V, Is = Temperature = -45 C FREQ Gain Isolation Input Stability Page 14 of 18

21 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 3.V, Is = Temperature = -45 C Input FREQ Gain Isolation Stability Page of 18

22 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 3.00V, Is = Temperature = +85 C FREQ Gain Isolation Input Stability Page 16 of 18

23 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 2.70V, Is = Temperature = +85 C Input FREQ Gain Isolation Stability Page 17 of 18

24 Input = -S11 (db) = -S22 (db) TEST CONDITIONS: Vd = 3.V, Is = Temperature = +85 C FREQ Gain Isolation Input Stability Page 18 of 18

25 OUTPUT RETURN LOSS (db) OUTPUT RETURN LOSS (db) INPUT RETURN LOSS (db) INPUT RETURN LOSS (db) ISOLATION (db) ISOLATION (db) GAIN (db) GAIN (db) MMIC Amplifier Typical Performance Curves GAIN vs. FREQUENCY & TEMPERATURE INPUT POWER = -25dBm, Vd = 4V 5-45 C +25 C +85 C GAIN vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = -25dBm, Temperature = +25 C 5 3.5V 4V 4.5V ISOLATION vs. FREQUENCY & TEMPERATURE INPUT POWER = -25dBm, Vd = 4V - 45 C +25 C +85 C ISOLATION vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = -25dBm, Temperature = +25 C 3.5V 4V 4.5V INPUT RETURN LOSS vs. FREQUENCY & TEMPERATURE INPUT POWER = -25dBm, Vd = 4V INPUT RETURN LOSS vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = -25dBm, Temperature = +25 C C +25 C V 4V +85 C 4.5V OUTPUT RETURN LOSS vs. FREQUENCY & TEMPERATURE INPUT POWER = -25dBm, Vd = 4V OUTPUT RETURN LOSS vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = -25dBm, Temperature = +25 C C +25 C +85 C V 4V 4.5V Page 1 of 4