Maintenance/ Discontinued

Transcription

1 CCD Area Image Sensor MN39243AT Diagonal 6.0 mm (type-1/3) 480k-pixel CCD Area Image Sensor Overview The MN39243AT is a 6.0 mm (type-1/3) interline transfer CCD (IT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section and CCDs for signal readout. The electronic shutter function has made an exposure time of 1/ seconds possible. Further, this device has the features of high sensitivity, low noise, broad dynamic range, and low smear. This device has a total of pixels (798 horizontal 584 vertical) and provides stable and clear images with a resolution of 550 horizontal TV-lines and 420 vertical TV-lines. Part Number Size System Color or B/W MN39243AT 6.0 mm (type-1/3) CCIR B/W Features Effective pixel number: 753 (horizontal) 582 (vertical) High sensitivity Broad dynamic range Low smear Electronic shutter Applications Surveillance cameras FA, OA cameras Pin Assignments OD φ R RD VO LG OG φ H2 φ H (Top View) PW φ V4 φ V3 φ V2 φ V1 PT Sub IS Publication date: September 2001 SMD00010AEC 1

2 Block Diagram 16 PW (Internal connection) 16 PW 5 LG 4 VO 1 OD 3 RD Output section 2 φ R Pin Descriptions Pin No. Symbol Description 1 OD Output drain 2 φ R Reset pulse 3 RD Reset drain (1 dummy + OB OB1 + 2 dummies) 6 OG (2 columns OB columns valid area + 43 columns OB) Photo diode Vertical shift register Horizontal shift register 7 φ H2 8 φ H1 15 φv4 14 φ V3 13 φ V2 12 φ V1 9 IS 10 Sub 11 PT 4 VO Video output 12 φ V1 Vertical shift register clock pulse 1 5 LG Output load transistor gate 6 OG Output gate 7 φ H2 Horizontal register clock pulse 2 8 φ H1 Horizontal register clock pulse 1 Device Parameter (H V) Parameter Value Unit Total pixel number pixel Effective pixel number pixel Active pixel number pixel Image sensing block dimension mm 2 Pixel dimension µm 2 Pin No. Symbol Description 9 IS Horizontal CCD input source 10 Sub Substrate 11 PT P-well for protection circuit 13 φ V2 Vertical shift register clock pulse 2 14 φ V3 Vertical shift register clock pulse 3 15 φ V4 Vertical shift register clock pulse 4 16 PW P-well 2 SMD00010AEC

3 Absolute Maximum Ratings and Operating Conditions Parameter Absolute maximum rating Operating condition Lower limit Upper limit Min Typ Max V RD V V OD V V IS V V LG (Internal bias) V V OG (Internal bias) V V PT V V PW (Reference voltage) 0 V V φr *1, High-Low V Bias (Supplied internally) V V φh1 High V Low V V φh2 High V Low V V Sub * (Supplied internally) V φv Sub *2 V φv1 V φv2 V φv3 V φv V High V Middle V Low V Middle V Low V High V Middle V Low V Middle V Low V Operating temperature C Storage temperature C Note) *1 : Reset V φr(h) V φr(l) GND *3: Absolute maximum rating 0.2 < V φv V PT < 24.5 (V) *2: V Sub when using electronic shutter function *4: Relation between V PT and V φv(l) Set V PT that is to meet the following conditions for VL voltage of the vertical shift clock waveform. V PT VL (V φv1l to V φv4l ) High-Low Bias φv Sub High φv Sub Low GND φv Sub V Sub (Supplied internally) Unit SMD00010AEC 3

4 Optical Characteristics Parameter Symbol Conditions Min Typ Max Unit S/N ratio (dark) S/Nd Dark condition db Sensitivity So Standard condition (J chart) 750 mv Carrier saturation output Sa J chart mv Vertical smear Sm 1/10 V chart, F db Graph of Characteristics Relative sensitivity (%) CCD spectral characteristics Wavelength (nm) 4 SMD00010AEC

5 Timing Diagram High speed pulse timing φ H ns ± 3 ns CCD output φ R Clamp pulse (DS1) Sampling pulse (DS2) 3.2 ns ± 3 ns 13.0 ns ± 3 ns 6.7 ns +3.0 ns 2.7 ns +3.0 ns 4.3 ns 2.7 ns 17.5 ns ± 3 ns 17.5 ns ± 3 ns SMD00010AEC 5

6 Timing Diagram (continued) Rise time and fall time of each pulse φ V1, φ V3 φ V2, φ V4 φ H1, φ H2, φ R 10 ns 300 ns 300 ns 300 ns 300 ns 10 ns 300 ns DS1, DS2 300 ns 10 ns 10 ns 6 SMD00010AEC

7 Package Dimensions (unit: mm) WDIP016-P-0500C 14.00± ± Mounting position-up Reference plane Valid pixel center CCD 6.20± ±0.08 (12.77) 11.40±0 CCD ± Refractive index : ±0 (0.60) (0.77) 0.46± M 16 9 Mounting position-bottom 0.80 (1.30) 3.40±5 3.90± ±0 (0.38) (R 0.50) The center of the package is equal to the center of the effective pixel area. 2. The rotation angle of the effective pixel area: up to ±1.0 degree 3. The distance from the seal glass surface to the surface of the effective pixel area: 1.69 mm ± 0 mm 4. The tilt of the effective pixel area for the seal glass surface: up to 30 µm 5. Thickness of the seal glass: 0.8 mm ± 0 mm, and the refractive index: ±0.05 SMD00010AEC 7

8 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.