1-Mbit (64K x 16) Static RAM

Transcription

1 1-Mbit (64K x 16) Static RAM Features Temperature ranges Commercial: 0 C to 70 C Industrial: 40 C to 85 C Automotive-A: 40 C to 85 C Automotive-E: 40 C to 125 C Pin and function compatible with CY7C1021BV33 High speed t AA = 8 ns (Commercial & Industrial) t AA = 12 ns (Automotive-E) CMOS for optimum speed and power Low active power: 325 mw (max) Automatic power down when deselected Independent control of upper and lower bits Available in Pb-free and non Pb-free 44-pin 400 Mil SOJ, 44-pin TSOP II and 48-Ball FBGA packages Functional Description The CY7C1021CV33 is a high performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO 1 through IO 8 ), is written into the location specified on the address pins (A 0 through A 15 ). If Byte High Enable (BHE) is LOW, then data from IO pins (IO 9 through IO 16 ) is written into the location specified on the address pins (A 0 through A 15 ). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on IO 1 to IO 8. If Byte High Enable (BHE) is LOW, then data from memory appears on IO 9 to IO 16. For more information, see the Truth Table on page 9 for a complete description of Read and Write modes. The input and output pins (IO 1 through IO 16 ) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines. Logic Block Diagram DATA IN DRIVERS A 7 A 6 A 5 A 4 A 3 A 2 ROW DECODER 64K x 16 RAM Array IO 0 IO 7 IO 8 IO 15 A 1 A 0 SENSE AMPS COLUMN DECODER A 8 A 9 A 10 A 11 A 12 A 13 A 14 A 15 BHE WE CE OE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA Document Number: Rev. *H Revised October 11, 2007

2 Selection Guide Unit Maximum Access Time ns Maximum Operating Current Comm l/ind l ma Automotive-A 80 ma Automotive-E 90 ma Maximum CMOS Standby Current Comm l/ind l ma Automotive-A 5 ma Automotive-E 10 ma Pin Configuration Figure Pin SOJ/TSOP II [1] Figure Ball FBGA Pinout [1] A 4 A 3 A 2 A 1 A 0 CE IO 1 IO 2 IO A 5 A 6 A 7 OE BHE BLE IO 16 IO 15 IO 14 IO IO 4 V CC V SS V SS 33 V CC IO 5 32 IO 12 IO IO 11 IO IO 10 IO IO 9 WE NC A 15 A A 9 A A 10 A A 11 NC NC 1 BLE IO 8 IO 9 V SS V CC IO 14 IO 15 NC OE BHE A 0 A 3 A 1 A 4 IO 10 A 5 A 6 IO 11 NC A 7 IO 12 NC NC IO 13 A 14 A 15 NC A 12 A 13 A 8 A 9 A 10 A 2 NC CE IO 0 IO 2 IO 1 IO 3 V CC IO 4 V SS IO 5 IO 6 WE IO 7 A 11 NC A B C D E F G H Note 1. NC pins are not connected on the die. Document Number: Rev. *H Page 2 of 14

3 Pin Definitions Pin Name SOJ, TSOP Pin Number A 0 A , 18 21, 24 27, IO 1 IO 16 [2] 7 10, 13 16, 29 32, BGA Pin Number A3, A4, A5, B3, B4, C3, C4, D4, H2, H3, H4, H5, G3, G4, F3, F4 B6, C6, C5, D5, E5, F5, F6, G6, B1, C1, C2, D2, E2, F2, F1, G1 IO Type Input NC 22, 23, 28 A6, D3, E3, E4, G2, H1, H6 No Connect WE 17 G5 Input or Control CE 6 B5 Input or Control BHE, BLE 40, 39 B2, A1 Input or Control OE 41 A2 Input or Control Description Address Inputs. Used to select one of the address locations. Input or Output Bidirectional Data IO lines. Used as input or output lines depending on operation. No Connects. Not connected to the die. Write Enable Input, Active LOW. When selected LOW, a write is conducted. When deselected HIGH, a read is conducted. Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip. Byte Write Select Inputs, Active LOW. BHE controls IO 16 IO 9, BLE controls IO 8 IO 1. Output Enable, Active LOW. Controls the direction of the IO pins. When LOW, the IO pins are allowed to behave as outputs. When deasserted HIGH, the IO pins are tri-stated and act as input data pins. V SS 12, 34 D1, E6 Ground Ground for the device. Connected to ground of the system. V CC 11, 33 D6, E1 Power Supply Power Supply Inputs to the Device. Note 2. IO 1 IO 16 for SOJ/TSOP and IO 0 IO 15 for BGA packages. Document Number: Rev. *H Page 3 of 14

4 Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature C to +150 C Ambient Temperature with Power Applied C to +125 C Supply Voltage on V CC Relative to GND [3] V to +4.6V DC Voltage Applied to Outputs in High Z State [3] V to V CC +0.5V DC Input Voltage [3] V to V CC +0.5V Current into Outputs (LOW) ma Static Discharge Voltage... >2001V (MIL-STD-883, Method 3015) Latch Up Current... >200 ma Operating Range Range Ambient Temperature (T A ) V CC Commercial 0 C to +70 C 3.3V ± 10% Industrial 40 C to +85 C Automotive-A 40 C to +85 C Automotive -E 40 C to +125 C Electrical Characteristics Over the Operating Range Parameter Description Test Conditions V OH Output HIGH Voltage V CC = Min, I OH = 4.0 ma V OL Output LOW Voltage V CC = Min, I OL = 8.0 ma V IH Input HIGH Voltage Min Max Min Max Min Max Min Max Unit V 2.0 V CC V 2.0 V CC V CC V CC V IL Input LOW Voltage [3] V I IX Input Leakage GND < V I < V CC Com l/ind l µa Current Auto-A 1 +1 Auto-E I OZ Output Leakage GND < V I < V CC, Com l/ind l µa Current Output disabled Auto-A 1 +1 Auto-E I CC V CC Operating V CC = Max, Com l/ind l ma Supply Current I OUT = 0 ma, Auto-A 80 f = f MAX = 1/t RC Auto-E 90 I SB1 Automatic CE Power Max V CC, Com l/ind l ma Down Current TTL CE > V IH Auto-A 15 Inputs V IN > V IH or V IN < V IL, f = f MAX Auto-E 20 I SB2 Automatic CE Power Max V CC, Com l/ind l ma Down Current CE > V CC 0.3V, Auto-A 5 CMOS Inputs V IN > V CC 0.3V, or V IN < 0.3V, f = 0 Auto-E 10 V Note 3. V IL (min) = 2.0V and V IH (max) = V CC + 0.5V for pulse durations of less than 20 ns. Document Number: Rev. *H Page 4 of 14

5 Capacitance Tested initially and after any design or process changes that may affect these parameters. Parameter Description Test Conditions Max Unit C IN Input Capacitance T A = 25 C, f = 1 MHz, V CC = 3.3V 8 pf C OUT Output Capacitance 8 pf Thermal Resistance Tested initially and after any design or process changes that may affect these parameters. Parameter Description Test Conditions SOJ TSOP II FBGA Unit Θ JA Thermal Resistance (Junction to Ambient) C/W Θ JC Thermal Resistance (Junction to Case) AC Test Loads and Waveforms Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51 Figure 3. AC Test Loads and Waveforms [4] C/W 8-ns devices: OUTPUT Z = 50Ω * CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TEST ENVIRONMENT 50 Ω 1.5V 30 pf* 10-, 12-, 15-ns devices: 3.3V OUTPUT 30 pf* R 317Ω R2 351Ω (a) (b) 3.0V GND ALL INPUT PULSES 90% 90% 10% 10% High-Z characteristics: R 317Ω 3.3V OUTPUT 5 pf R2 351Ω Rise Time: 1 V/ns (c) Fall Time: 1 V/ns (d) Note 4. AC characteristics (except High-Z) for all 8-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d). Document Number: Rev. *H Page 5 of 14

6 Switching Characteristics Over the Operating Range [5] Parameter Description Min Max Min Max Min Max Min Max Unit Read Cycle [6] t power V CC (Typical) to the First Access µs t RC Read Cycle Time ns t AA Address to Data Valid ns t OHA Data Hold from Address Change ns t ACE CE LOW to Data Valid ns t DOE OE LOW to Data Valid ns t LZOE OE LOW to Low Z [7] ns t HZOE OE HIGH to High Z [7, 8] ns t LZCE CE LOW to Low Z [7] ns t HZCE CE HIGH to High Z [7, 8] ns [9] t PU CE LOW to Power Up ns [9] t PD CE HIGH to Power Down ns t DBE Byte Enable to Data Valid ns t LZBE Byte Enable to Low Z ns t HZBE Byte Disable to High Z ns Write Cycle [10] t WC Write Cycle Time ns t SCE CE LOW to Write End ns t AW Address Setup to Write End ns t HA Address Hold from Write End ns t SA Address Setup to Write Start ns t PWE WE Pulse Width ns t SD Data Setup to Write End ns t HD Data Hold from Write End ns t LZWE WE HIGH to Low Z [7] ns t HZWE WE LOW to High Z [7, 8] ns t BW Byte Enable to End of Write ns Notes 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, and input pulse levels of 0 to 3.0V. 6. t POWER gives the minimum amount of time that the power supply is at typical V CC values until the first memory access is performed. 7. At any given temperature and voltage condition, t HZCE is less than t LZCE, t HZOE is less than t LZOE, and t HZWE is less than t LZWE for any given device. 8. t HZOE, t HZBE, t HZCE, and t HZWE are specified with a load capacitance of 5 pf as in part (d) of AC Test Loads and Waveforms. Transition is measured ±500 mv from steady state voltage. 9. This parameter is guaranteed by design and is not tested. 10. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW, and BHE/BLE LOW. CE, WE, and BHE/BLE is LOW to initiate a write. The transition of these signals terminate the write. The input data setup and hold timing is referenced to the leading edge of the signal that terminates the write. Document Number: Rev. *H Page 6 of 14

7 Switching Waveforms Figure 4. Read Cycle No. 1 (Address Transition Controlled) [11, 12] ADDRESS trc t OHA t AA DATA OUT PREVIOUS DATA VALID DATA VALID Figure 5. Read Cycle No. 2 (OE Controlled) [12, 13] ADDRESS CE t RC t ACE OE BHE,BLE t DOE t LZOE t DBE t HZOE t HZCE DATA OUT t LZBE HIGH IMPEDANCE DATA VALID t HZBE HIGH IMPEDANCE V CC SUPPLY CURRENT t LZCE t PU 50% t PD 50% I CC I SB Notes 11. Device is continuously selected. OE, CE, BHE, and/or BLE = V IL. 12. WE is HIGH for read cycle. 13. Address valid prior to or coincident with CE transition LOW. Document Number: Rev. *H Page 7 of 14

8 Switching Waveforms (continued) Figure 6. Write Cycle No. 1 (CE Controlled) [14, 15] ADDRESS t WC CE t SA t SCE t AW t HA t PWE WE t BW BHE, BLE t SD t HD DATA IO Figure 7. Write Cycle No. 2 (BLE or BHE Controlled) t WC ADDRESS BHE, BLE t SA t BW t AW t HA t PWE WE t SCE CE t SD t HD DATA IO Notes 14. Data IO is high impedance if OE, BHE, and/or BLE= V IH. 15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. Document Number: Rev. *H Page 8 of 14

9 Switching Waveforms (continued) Figure 8. Write Cycle No. 3 (WE Controlled, LOW) ADDRESS t WC CE t SCE WE t SA t AW t PWE t HA BHE,BLE t BW t HZWE t SD t HD DATA IO t LZWE Truth Table CE OE WE BLE BHE IO 1 IO 8 IO 9 IO 16 Mode Power H X X X X High Z High Z Power Down Standby (I SB ) L L H L L Data Out Data Out Read All Bits Active (I CC ) L H Data Out High Z Read Lower Bits Only Active (I CC ) H L High Z Data Out Read Upper Bits Only Active (I CC ) L X L L L Data In Data In Write All Bits Active (I CC ) L H Data In High Z Write Lower Bits Only Active (I CC ) H L High Z Data In Write Upper Bits Only Active (I CC ) L H H X X High Z High Z Selected, Outputs Disabled Active (I CC ) L X X H H High Z High Z Selected, Outputs Disabled Active (I CC ) Document Number: Rev. *H Page 9 of 14

10 Ordering Information Speed (ns) Ordering Code Package Diagram Package Type Operating Range 8 CY7C1021CV33-8VXC pin (400-Mil) Molded SOJ (Pb-free) Commercial CY7C1021CV33-8ZXC 44-pin TSOP Type II (Pb-free) CY7C1021CV33-8BAXC ball FBGA (Pb-free) 10 CY7C1021CV33-10VC pin (400-Mil) Molded SOJ Commercial CY7C1021CV33-10VXC 44-pin (400-Mil) Molded SOJ (Pb-free) CY7C1021CV33-10ZXC pin TSOP Type II (Pb-free) CY7C1021CV33-10ZI pin TSOP Type II Industrial CY7C1021CV33-10ZXI 44-pin TSOP Type II (Pb-free) CY7C1021CV33-10BAXI ball FBGA (Pb-free) 12 CY7C1021CV33-12VC pin (400-Mil) Molded SOJ Commercial CY7C1021CV33-12VXC 44-pin (400-Mil) Molded SOJ (Pb-free) CY7C1021CV33-12ZXC pin TSOP Type II (Pb-free) CY7C1021CV33-12VI pin (400-Mil) Molded SOJ Industrial CY7C1021CV33-12VXI 44-pin (400-Mil) Molded SOJ (Pb-free) CY7C1021CV33-12ZXI pin TSOP Type II (Pb-free) CY7C1021CV33-12BAI ball FBGA CY7C1021CV33-12BAXI 48-ball FBGA (Pb-free) CY7C1021CV33-12VE pin (400-Mil) Molded SOJ Automotive-E CY7C1021CV33-12VXE 44-pin (400-Mil) Molded SOJ (Pb-free) CY7C1021CV33-12ZSE pin TSOP Type II CY7C1021CV33-12ZSXE 44-pin TSOP Type II (Pb-free) CY7C1021CV33-12BAE ball FBGA 15 CY7C1021CV33-15VXC pin (400-Mil) Molded SOJ (Pb-free) Commercial CY7C1021CV33-15ZXC pin TSOP Type II (Pb-free) CY7C1021CV33-15ZI pin TSOP Type II Industrial CY7C1021CV33-15ZXI 44-pin TSOP Type II (Pb-free) CY7C1021CV33-15BAXI ball FBGA (Pb-free) CY7C1021CV33-15ZSXA pin TSOP Type II (Pb-free) Automotive-A Document Number: Rev. *H Page 10 of 14

11 Package Diagrams Figure Pin (400 Mil) Molded SOJ *B Document Number: Rev. *H Page 11 of 14

12 Package Diagrams (continued) Figure Pin Thin Small Outline Package Type II *A Document Number: Rev. *H Page 12 of 14

13 Package Diagrams (continued) Figure Ball FBGA (7 x 7 x 1.2 mm) TOP VIEW PIN 1 CORNER (LASER MARK) BOTTOM VIEW Ø0.05 M C Ø0.25MCAB Ø0.30±0.05(48X) PIN 1 CORNER A A B B C C 7.00±0.10 D E F G 7.00± D E F G H H A A B 7.00± B 7.00± C 0.53± ± C 0.15(4X) SEATING PLANE 0.36 C 1.20 MAX *G Document Number: Rev. *H Page 13 of 14

14 Document History Page Document Title: CY7C1021CV33, 1-Mbit (64K x 16) Static RAM Document Number: REV. ECN NO. Issue Date Orig. of Change Description of Change ** /06/01 HGK New datasheet *A /08/02 HGK Ram7 version C4K x 16 Async Removed Preliminary *B /25/02 HGK I SB1 and I CC values changed *C /31/02 DFP Updated BGA pin E4 to NC *D See ECN RKF 1) Added Automotive Specifications to datasheet 2) Added Pb-free devices in the Ordering Information *E See ECN SYT Added Pb-free on page 9 and 10 *F See ECN NXR Added Automotive-A operating range Corrected typo in the Pin Definition table Changed the description of I IX from Input Load Current to Input Leakage Current in DC Electrical Characteristics table Removed I OS parameter from DC Electrical Characteristics table Updated the ordering information table *G See ECN VKN Added t POWER specification in the AC Switching Characteristics table Added footnote 8 *H See ECN VKN/AESA Corrected TSOP II package outline Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: Rev. *H Revised October 11, 2007 Page 14 of 14 All product and company names mentioned in this document are the trademarks of their respective holders.