ESD9X5VL ESD9X5VL. X x. Transient Voltage Suppressor
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1 Ultra Small Profile, low capacitance Transient Voltage Suppressor Descriptions The is an ESD transient voltage suppression component which provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). It is particularly well-suited for cellular phones, portable device, digital cameras, power supplies and many other portable applications because of its small package and low weight. The is Uni-directional, Safely dissipate ESD strikes of Level 4, IEC , exceeding the maximum requirement. Using the MILSTD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the device provides protection for contact discharges to greater than +/-10KV Package Diagram 1 2 Pin Configuration The is available in a WBFBP-02C package with peak reverse working voltage of 5 voltages. X x Features Peak Reverse Working Voltage: 5V Low leakage current High ESD protection Level: >+/-15KV per HBM IEC Level 4 ESD Protection IEC Level 4 EFT Protection Small Body Outline: 1.0 x 0.6 x 0.5mm X= Date Code x = Specific Device Code Marking Diagram and explain Applications Cell phone handsets and accessories Personal Digital Assistants (PDAs) Notebooks, Desktops, and Serves Portable Instrumentation Digital Cameras MP3/MP4/PMP Players Order Information Device Package Shipping -2/TR WBFBP-02C 5000/Tape&Reel Will Semiconductor Ltd. 1 Jun, 2008 Ver1.4
2 Maximum Ratings Rating Symbol Value Units Maximum peak pulse current (tp=8/20us) Ipp 9.0 A ESD Per IEC (Air) ESD Per IEC (Contact) Vpp +/-15 +/-10 KV Maximum lead temperature for soldering during 10s TL 260 Storage temperature range Tstg -55 to +150 Operating temperature range Top -55 to +150 o C o C o C Electronics Parameter Symbol Parameter Vrwm Peak Reverse Working Voltage Ir Reverse Leakage Vrwm Vbr Breakdown It It Test Current Ipp Maximum Reverse Peak Pulse Current Vc Clamping Ipp Ppk Peak Power Dissipation C Junction Capacitance If Forward Current Vf Forward If Electronics Characteristics V RWM V C V BR I F I I R I T I PP V F Uni Directional TVS V V RWM (V) I R ( V RWM V BR I T (Note 2) I T C (pf) V C I PP = 1 A V C Device Device Marking Max Max Min ma Typ Max Max -2/TR x Per IEC Figures 2 and 3 See Below 2. V BR is measured with a pulse test current I T at an ambient temperature of 25 C. % OF PEAK PULSE CURRENT t r t P PEAK VALUE I 8 s PULSE WIDTH (t P ) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s HALF VALUE I RSM 20 s t, TIME ( s) Figure 1. 8 X 20 s Pulse Waveform Will Semiconductor Ltd. 2 Jun, 2008 Ver1.4.
3 Typical Performance Graph Figure 2. ESD Clamping Voltage Screenshot Positive 8 kv Contact per IEC Figure 3. ESD Clamping Voltage Screenshot Negative 8 kv Contact per IEC IEC Spec. Level Test Voltage (kv) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) IEC Waveform I peak 100% 90% 30 ns 60 ns 10% t P = 0.7 ns to 1 ns Figure 4. IEC Spec Will Semiconductor Ltd. 3 Jun, 2008 Ver1.4
4 Outline Dimension Top View Bottom View Side View Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A D E D REF 0.018REF E REF 0.016REF b e L L REF 0.000REF Will Semiconductor Ltd. 4 Jun, 2008 Ver1.4
5 PCB Layout Guide Will Semiconductor Ltd. 5 Jun, 2008 Ver1.4
6 2.5 mm < 2.5 mm 350 mm 3 < 350 mm 3 3 C/second max. - (Ts(min)) 150 C - m(ts(ax)) 200 C - ( ) (ts) seconds Ts(max) TL - 3 C/second max. Time maintained above: - (TL) 217 C - (tl) seconds (Tp) 245+0/-5 C 260+0/-5 C 10-30seconds 20-40seconds Temperature (tp) 6 C/second max. 25 C 8 minutes max. Welding temperature curve Will Semiconductor Ltd. 6 Jun, 2008 Ver1.4
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Description RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive components which are connected
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Transient Voltage Suppressors ESD Protection Diodes with Low Clamping Voltage The NUP0W transient voltage suppressor is designed to protect high speed data lines from ESD, EFT, and lightning. Features:
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Description diodes are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA s. They offer superior electrical characteristics such as
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