GSE3314 GS P/N. 4-Line ESD Protection Low Capacitance Bi-direction TVS. Product Description. Applications. Packages & Pin Assignments SOT-563 GSE3314

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1 4-Line ESD Protection Low Capacitance Bi-direction TVS Product Description are designed by bi-direction TVS diode, to protect high speed data interfaces. This product has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). The TVS diode prevents over-voltage on the power line, protecting any downstream components. The low capacitance configuration allows the user to protect high-speed data or transmission lines. This device is optimized for ESD protection of portable electronics. They may be used to meet the ESD immunity requirements of IEC , Level 4 (±15kV air, ±8kV contact discharge). Features Transient protection for data lines to IEC (ESD) ±15kV (air), ±8kV (contact) IEC (EFT) 40A (5/50ns) Small package saves board space Protects up to four I/O lines & power line Low capacitance (<3.5pF) for high-speed interfaces Low leakage current and clamping voltage Low operating voltage : 3.3V Solid-state silicon-avalanche technology Applications USB 2.0 Power and Data Line Protection Monitors and Flat Panel Displays Digital Visual Interface (DVI) 10/100/1000 Ethernet Notebook Computer SIM Ports ATM Interface IEEE 1394 Fire wire Ports Cellular Handsets & Accessories Portable Instrumentation Digital Cameras MP3 Players Video Graphics Cards Packages & Pin Assignments SOT-563 Marking Information GS P/N 3 1

2 Ordering Information GS P/N Package Code Pb Free Code X7 F Part Number Package Quantity X7F SOT PCS Absolute Maximum Ratings (T A =25ºC Unless otherwise noted) Symbol Parameter Typical Unit P pk Peak Pulse Power ( t p = 8/20μs ) 100 W I pp Maximum Peak Pulse Current ( t p = 8/20μs ) 5 A V pp ESD per IEC (Air ) ±15 KV V pp ESD per IEC (Contact ) ±8 KV T J Operating Junction Temperature -55 ~ 125 ºC T STG Storage Temperature Range -55 ~ 150 ºC T L Lead Soldering Temperature 260 ( 10sec ) ºC Electrical Characteristics (T A =25ºC Unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit V RWM V BR I R V C V C C j Reverse Stand Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance 3.3 V I t = 1mA V RWM = 5V, T=25ºC I pp = 1A, t p = 8/20μs I pp = 5A, t p = 8/20μs V R = 0V, f = 1MHz 3.6 V μa 7 V 12 V pf 2

3 Typical Characteristics Application Information Device Connection for Protection of Five Data Lines is designed to protect up to five bidirectional data lines. The device is connected as follows : 1. Bidirectional protection of five I/O lines is achieved by connecting pins 1, 3, 4, 5, and 6 to the data lines. Pin 2 is connected to ground. The ground connection should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. Circuit Board Layout Recommendations for Suppression of ESD Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: Place the TVS near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. 3

4 Package Dimension SOT-563 Symbol Dimensions Millimeters Inches Min Max Min Max A A e c D b E E L θ 7º REF 7º REF 4

5 NOTICE Information furnished is believed to be accurate and reliable. However Globaltech Semiconductor assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Globaltech Semiconductor. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information without express written approval of Globaltech Semiconductor. CONTACT US GS Headquarter 4F.,No.43-1,Lane11,Sec.6,Minquan E.Rd Neihu District Taipei City 114, Taiwan (R.O.C) Wu-Xi Branch No.21 Changjiang Rd., WND, Wuxi, Jiangsu, China (INFO. &. TECH. Science Park Building A 210 Room) sales_cn@gs-power.com 824 Bolton Drive Milpitas. CA RD Division Version_1.0 Notice