Green Memory Solution. Jung-Bae Lee

Transcription

1 Green Memory Solution Jung-Bae Lee

2 Contents Introduction Data Explosion and Data Center Expansion Data Center Issues: Power & Performance Samsung Green Memory Solution History of Green Memory Memory & Storage: DDR4 DRAM & NVMe PCIe SSD TCO Savings and Benefits of Samsung Solution Future Memory and Storage 2/25

3 Data Trends in Data Centers Paradigm shift from Web 2.0 to Web 3.0 triggered exponential data increase Tablet PC Laptop + 250B Photos uploaded/day 30hours Video uploaded/min WEB ,000 New tweets/min 3,000 Photos uploaded/min Mobile Database Remote Server 3/25 2,083 Check-ins/min Read Write

4 Growth of Data & Data Traffic DATA DATA World-wide Volume of data expected to double every 1.2 years 125% annual increase of data traffic handled by data center Data Growth Data Traffic Growth (ZB) DATA DATA DATA (ZB) SNS C Compute Client [ Oracle, 2013 ] 4/ [ Cisco, 2013 ]

5 Data Center Expansion Data center revenue will reach $20B by 2016 Strong storage volume demand accordingly (over 150 EB by 2016) Data Center Revenue Forecast Data Center Storage Forecast CAGR : 36% $19.5 $15.6 $11.9 (Exabyte) CAGR : 47% (Billion) $5.7 $ [ 451 Research, 1Q 2013 ] 5/ [ Gartner, 2013 ]

6 Issues with Data Traffic in Data Center Wide disparity between data traffic and data center infrastructure 3.7X data traffic increase but space and server/storage spending only projected to 1.7X and 1.2X increase 5.2 ZB 6.4 ZB 2.6 ZB 3.3 ZB 4.1 ZB 1.8 ZB 569 M 2 SF $88B $90B $94B $99B $103B $109B [ Reference : IDC s Data center Census, 12 / Gartner 13 ] 6/25

7 Key Concerns and Movements Data center CIOs (Chief Information Officer) 4 major problems Required power supply for maintaining and operating data centers Insufficient space for housing the increasing amounts of data Limited budget for maintenance Management as overall operational and security issues Data center industry s movements to solve issues Location, Location, Location: Cooler climate & low $ real estate Maximizing server efficiency with virtualization (Key technology breakthrough) 7/25 Source: SAMSUNG Memory Solutions Forum 2013

8 Power in Data Center Power-related cost occupies 31% from total data center cost Memory & Storage power portion including cooling takes 32% of total data center power Data Center Cost Portion Memory Power Portion [Worldwide Average PUE*: 1.65] 57% 8% 4% CPU 16% Others 25% Cooling and others 27% 13% 18% Power Distribution & Cooling Power Server Cost Networking Equipment Other Infrastructure Source : 8/25 HDD/SSD 10% HDD/SSD Cooling 7% DRAM Cooling 6% DRAM 9% *PUE : Power Usage Efficiency Source: Uptime Institute s 2013 Data Center Survey, SAMSUNG, EMC

9 Memory Power Portion in Data Center Memory power portion of data center getting more importance On-going effort for better PUE (Power Usage Efficiency) Consequently, better PUE to make relative increase in memory power portion (19% with PUE % * with PUE 1.2) [World wide average PUE* : 1.65] CPU 17% Others CPU 19% Others 17% CPU 22% Others 29% 39% Power, Board, Network Power, Board, Network Power, Board, Network 34% 25% 29% Source: Uptime Institute 2013 Data Center Survey, SAMSUNG, IDC, EMC *PUE (Power Usage Efficiency) = 9/25 Total facility power IT equipment power Ideal PUE is 1.0 if others is zero.

10 Performance in Data Center HDD DDR3 SSD DDR4 Virtualization as key technology for TCO (Total Cost of Ownership) reduction, requiring more performance from H/W to handle more data Typical Server Application Operating System H/W Traffic Hardware Typical Server Usage Optimized for Virtualization IOPS < 400 IOPS > 140K Latency > 50ms Latency < 5ns Server with Virtual Machine Application Operating System Hypervisor (Virtualization) Hardware Application Operating System MORE H/W Traffic Performance 1x Performance 1.39x Power 1x Power 0.85x 10/25

11 Let There Be Right Solution with Samsung Green Memory Solution DDR4 DRAM & NVMe PCIe SSD 다른이미지사용 11/25

12 History of Samsung Green Memory Since 2009, Samsung has been creating generations of Green Memory solution every year Power Efficiency & Technology Innovation 1 st Gen. 40nm-class DDR3 2Gb 2 nd Gen. 30nm-class DDR3 4Gb 3 rd Gen. 20nm-class DDR3 4Gb 30nm-class SATA 3G 4 th Gen. 20nm-class DDR3 4Gb 20nm-class SATA 6G Process Technology Innovation 12/25 20nm-class DDR4 4Gb V-NAND NVMe PCIe 5 th Gen. Solution Technology Innovation

13 World Best Memory and Storage Samsung s world best DRAM and SSD products leading the market 64Mb 256Mb 1Gb 2Gb 4Gb DDR4 DRAM 1Gb 2Gb 4Gb 8Gb 16Gb 32Gb 64Gb 3D V-NAND DRAM No.1 8 Production NAND No.1 MCP No.1 12 Production 16GB 32GB 64GB 256GB 512GB 800GB 1TB SSD No.1 World Best Semiconductor Company 13/25

14 Samsung Green DDR4 DRAM (1) 39% system performance improvement and 15% memory power reduction compared to existing DDR3 technology (1600Mbps, 1.35V 2133Mbps, 1.2V) More Performance Lower Power 29% 39% 15% 6% DDR3 DDR4 DDR3 DDR4 DDR3 DDR4 DDR3 DDR4 Integer Operation Floating Point Operation Memory Power System Power * Benchmark result (16GB 2DPC@DDR3 1.35V, DDR4 1.2V) [ Condition : 16GB 2DPC@ DDR3 1.35V, DDR4 1.2V ] 14/25

15 Samsung Green Memory - DDR4 DRAM (2) More reliability features compared to DDR3 Samsung s In-DRAM solution is the most efficient for Row Hammer operation Enhanced Reliability Row Hammer Free PPR CRC CA Parity DDR4 [ Better Performance ] [ Less Power ] 4% -6% PDA Mode DBI LRDIMM DDR3 Parity RDIMM Data ECC ptrr + 2x Ref In-DRAM (Samsung) ptrr + 2x Ref In-DRAM (Samsung) * PPR(Post Package Repair), CRC(Cyclic Redundancy Check), CA (Command, Address) Parity, PDA(Per DRAM Addressability), DBI(Data Bus Inversion) * ptrr : Pseudo Target Row Refresh * Condition : 3DPC & > 32GB/Ch. 15/25

16 Samsung Green NVMe PCIe SSD (1) NVMe PCIe provides superb bandwidth through multi-lane architecture, and better latency from efficient protocol and simple architecture 4,000MB/s CPU 600MB/s +567% Bandwidth Improvement CPU CPU PCIe HBA SATA CPU NVMe PCIe +67% Latency Improvement 16/25

17 Samsung Green NVMe PCIe SSD (2) NVMe PCIe SSD provides significant energy efficiency (x2000 compared to SATA HDD) 6 Watt 3x better in Power Low-power PCB/Circuits 700x better in Performance Low-power Controller 140K IOPS Low-power NAND 200 IOPS 2,000x Energy Effiency (IOPS/Watt) 17/25 2 Watt Power : condisdered with 8 hours active and 16 hours idle status Performance : workload considered with 7:3 read/write ratio

18 TCO savings Green Memory Green memory can dramatically reduce TCO (Total Cost Ownership) Better performance, less power and space with same cost Existing Server Green Memory Server Concurrent Users (1K people) 40,000 65,000 Power Consumption (KW) 2,600 Same Cost 2,300 Server (EA) 10,000 7,800 18/25 Source: SAMSUNG Green Memory - Official Website

19 Benefits from Samsung Solution TCO savings translated to increase in data center capacity and investment 3.4X improvements in space, 2X in server/storage 1.8 ZB 2.6 ZB 3.3 ZB 569 M 2 SF $88B $90B $94B 4.1 ZB 1620 $155B 5.2 ZB 1750 $164B 6.4 ZB 1900 $176B /25 [ Reference : IDC 12 / Gartner 13 / Samsung ]

20 CSV (Creating Shared Value) Samsung 5 th generation Green Memory solution saves 3.1 billion dollars, equivalent to 45TWh energy savings 100% Green 45TWh Reduction* 3.1 Billion Dollars 800M Trees (Singapore area x4.6) World population can use handset for 1.8 years Thermoelectric power plant 7.7 units reduction Solar Heat Power Station (Area of Hawaii x2) * Assumes 14 W/W Server & high-end storage change to 100% Green Memory 20/25

21 Future Technology - DRAM Samsung keeps leading process technology innovation Now 20nm process 1xnm process 1ynm process Mar. 11 th 14 - Qualification - Press Release TSV* for high capacity with low power, HBM* for high BW with low power 4H TSV Stack DRAM HBM upto 128GB capacity module (with 8Gb comp.) 8Channel 1024 I/O (128Bit per Channel) 256GB/s (2Gbps per Pin) 2/4/8H TSV Stack 21/25 * TSV : Thru Silicon Via, HBM : High BW Memory

22 Future Technology - SSD NAND scale-down to be continued with V-NAND technology Innovative features to be introduced with next generation SSDs SSD with V-NAND New Features Key_Value Storage Database Key_Value Communication Object Storage In Storage Processing Advantage Planar NAND Easy to produce with simple process V-NAND High reliability & process reuse Processing Distribution Challenge Shrinking under sub-10nm Stacking 22/25

23 Future Memory Low Performance High On-going technology innovation keeping up DRAM & NAND scale-down New memory solutions under development for future value creation Performance vs. Cost DRAM PRAM Storage Class Unified MRAM Embedded Unified NAND ReRAM Large size storage Maturity Low High Low Cost 23/25 High

24 Summary Samsung s world best DRAM and SSD products are leading the market Samsung has been creating generations of Green Memory solution every year since 2009 Samsung Green memory can dramatically reduce TCO (Total Cost of Ownership) DDR4 DRAM offers 39% improved performance and 15% reduced power compared with DDR3 NVMe PCIe SSD offers 2,000x better energy efficiency than SATA HDDs Future technology developments are on track DRAM & NAND keep shrinking with process technology innovation New features are going to be introduced with next generation SSDs New memory technologies (MRAM/PRAM) are under development as value creation products 24/25

25 Thank You