Monolithic Amplifier CMA-545G1+ Low Noise, High IP to 2.2 GHz. The Big Deal

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1 Low Noise, High IP3 Monolithic Amplifier 50Ω The Big Deal 0.4 to 2.2 GHz Ceramic, Hermetically Sealed, Nitrogen filled Low profile case,.045 high High Gain, 31.5 db Low Noise Figure, 1.0 db High IP3, dbm Class 1B HBM ESD rating (500V) CASE STYLE: DL1721 Product Overview Mini-Circuits is a E-PHEMT based Low Noise MMIC Amplifier operating from 0.4 to 2.2 GHz with a unique combination of low noise and high IP3 making this amplifier ideal for sensitive receiver applications. This design operates on a single +5V supplyand is internally matched to 50 ohms. The MMIC amplifier is bonded to a multilayer integrated LTCC substrate and then hermetically sealed under a controlled nitrogen atmosphere with gold-plated covers and eutectic AuSn solder. These amplifiers have been tested to MIL requirements for gross leak, fine leak, thermal shock, vibration, acceleration, mechanical shock, and HTOL. Key Features Feature High Gain db Ultra Low Noise: 0.8 db NF at 0.9 GHz High IP3: +36 dbm IP3 at 0.9 GHz Power: +22 dbm at 0.9 GHz Internally Matched Ceramic Hermetic Package Max Input Power +25 dbm High Reliability Advantages Incorporating multiple stages of amplification, the provides high gain reducing cost and PCB board space. Excellent Noise Figure, measured in a 50 Ohm environment without any external matching. When combined with high gain of this design, it suppresses second stage NF contribution. Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noise Receiver Front End (RFE) giving the user advantages at both ends of the dynamic range: sensitivity & two-tone IM dynamic range The maintains consistent output power capability over the full operating temperature range making it ideal to be used in remote applications such as LNB s as the L Band driver stage No external matching elements required to achieve the advertized noise and output power over the full band Low Inductance, repeatable transitions, excellent reliability Ruggedized design operates up to input powers often seen at Receiver inputs. Low, small signal operating current of 160 ma nominal maintains junction temperatures typically below 130 C at 85 C ground lead temperature Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com Page 1 of 5

2 Low Noise, High IP3 Monolithic Amplifier GHz Product Features High Gain, 32 db typ. at 0.9 GHz Ultra Low Noise Figure, 0.8 db typ. at 0.9 GHz High IP3, 36 dbm typ. at 0.9 GHz High Pout, P1dB up to 22 dbm typ. at 0.9 GHz Single Positive Supply Voltage, 5V Class 1B HBM ESD rating (500V) Small size - 3mm x 3mm x 1.14mm Ceramic, hermetic, Nitrogen filled No external matching components required Typical Applications Cellular ISM GSM WCDMA LTE GPS CASE STYLE: DL1721 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications General Description is a high dynamic range, low noise, high IP3, high output power, monolithic amplifier. Manufactured using E-PHEMT* technology enables it to work with a single positive supply voltage. Unconditionally stable over the operating frequency. Terminal finish is Ni-Pd-Au and it has repeatable performance from lot to lot due to fully automated, tightly controlled semiconductor and assembly processes. simplified schematic and pad description Bias Bias Gnd RF In NC RF-IN 2,4,5,7 paddle Bias 6 RF-OUT and DC GND Bias Gnd RF NC Out, DC Top View Function Pad Number Description (See Application Circuit, Fig. 2) RF-IN 3 RF input pad (connected to RF-IN via C1) RF-OUT & DC 6 RF output pad (connected to RF-OUT via blocking external cap C2, and Supply voltage Vs via RF Choke L2) BIAS 1 & 8 Bias pad 1 connects to Vs via L1 & pad 8 connects to Vs GND bottom paddle 2&7 Connected to ground NOT USED 4,5 No internal connection; recommend connecting to ground *Enhancement mode Pseudomorphic High Electron Mobility Transistor. Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com REV. B M DJ/BT/CP Page 2 of 5

3 Monolithic E-PHEMT MMIC Amplifier Electrical Specifications (1) at 25 C, Vd=5V, Zo=50Ω, (refer to characterization circuit) Parameter Condition (MHz) Min. Typ. Max. Units Frequency Range GHz Noise Figure db Gain db Input db db IP dbm db Compression (2) dbm DC Volts (Vd) V DC Current (Id) ma DC Current Variation Vs. Temperature (3) ma/ C DC Current Variation Vs. Voltage ma/mv Thermal Resistance (5) 48 C/W (1) Measured on Mini-Circuits Characterization test board TB See Characterization Test Circuit (Fig. 1) (2) Current increases at P1dB (3) (Current at 85 C - Current at -45 C)/130 DC Current Histogram Absolute Maximum Ratings (4) Parameter Ratings Operating Temperature (5) -55 C to 105 C Storage Temperature -65 C to 125 C Channel Temperature 150 C DC Voltage 6V Power Dissipation 1.35 W Input Power 25 dbm (4) Permanent damage may occur if any of these limits are exceeded. These maximum ratings are not intended for continuous normal operation. (5) Defined with reference to ground pad temperature < Current (ma) >190 Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com Page 3 of 5

4 Monolithic E-PHEMT MMIC Amplifier Characterization Test Circuit 3 2,4,5,7 paddle TB-758+ Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Characterization Test Board TB-758+) Gain, power at 1dB compression (P1dB), IP3 (OIP3), Noise Figure are measured using Agilent s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain: Pin=-25 dbm 2. IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dbm/tone at output. 3. Vs adjusted for 5V at device (Vd), compensating loss of bias tee. Recommended Application Circuit Suggested PCB Layout (PL-405) 3 2,4,5,7 paddle TB-758+ Component Description DUT C1, C2, C5, C6 100 pf C3, C4 1µF L1 36 nh L2 47 nh Fig 2. Recommended Application Circuit Product Marking MCL CMA- 545G1+ DC YYWW ceramic body model Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com Page 4 of 5

5 Monolithic E-PHEMT MMIC Amplifier Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Data Table Performance Data Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style DL1721 Ceramic package, exposed paddle, Terminla finish: NiPdAu Tape & Reel F66-1 Standard quantities available on reel 7 reels with, 50, 100, 0, 500 or 1K, 2K devices. Suggested Layout for PCB Design Evaluation Board Environmental Ratings PL-405 TB-758+ ENV-68 ESD Rating Human Body Model (HBM): Class 1B (500 to <1000V) in accordance with ANSI/ESD STM Machine Model (MM): Class M1 (pass 35V) in accordance with ANSI/ESD STM MSL Rating Moisture Sensitivity: MSL1 (these parts are hermetic, air cavity and therefore, MSL ratings do not strictly apply. For handling purpose, use MSL1) Qualification Testing Test Description Test Method/Process Results 1 Hermeticity (fine and gross leak) MIL-STD-2 Method 112, Cond. C & D Pass 2 Acceleration, 30Kg, Y1 Direction MIL-STD-883 Method 01 Cond. E Pass 3 Vibration, 10-00Hz sine, g, 3 axis MIL-STD-2 Method 4, Cond. D Pass 4 Mechanical shock MIL-STD-2 Method 213, Cond. A Pass 5 PIND G Hz MIL-STD-750 Method 52.2 Pass 6 Temp Cycle -55C/+125C, 1000 Cycles MIL-STD-2 Method 107 Pass 7 Autoclave, 121C, RH 100%, 15 Psig, 96 hrs JESD22-A102C Pass 8 HTOL, 1000hrs, 105C at rated Voltage condition MIL-STD-2 Method 108, Cond. D Pass 9 Bend Test JESD22-B113 Pass 10 Resistance to soldering heat, 3x reflow, 260C peak JESD22-B102 Pass 11 Drop Test JESD22-B111 Pass 12 Adhesion Strength Push Test>10 lb Pass Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms ); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at Mini-Circuits P.O. Box , Brooklyn, NY (718) sales@minicircuits.com Page 5 of 5

6 MMIC Amplifier Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions Definitions: Input = -S11 (db) Gain(Power Gain) = S21 (db) Reverse Isolation = -S12 (db) = -S22 (db) TEST CONDITIONS: Vd = 5.00V, Id = Temperature = +25 C FREQ Gain Isolation Input Stability IP-3 1dB Comp. Noise Figure (MHz) (db) (db) (db) (db) K Measure (dbm) (dbm) (db) /26/13 Page 1 of 9

7 MMIC Amplifier Typical Performance Data Definitions: Input = -S11 (db) Gain(Power Gain) = S21 (db) Reverse Isolation = -S12 (db) = -S22 (db) TEST CONDITIONS: Vd = 4.75V, Id = Temperature = +25 C FREQ Gain Isolation Input Stability IP-3 1dB Comp. Noise Figure (MHz) (db) (db) (db) (db) K Measure (dbm) (dbm) (db) /26/13 Page 2 of 9

8 MMIC Amplifier Typical Performance Data Definitions: Input = -S11 (db) Gain(Power Gain) = S21 (db) Reverse Isolation = -S12 (db) = -S22 (db) TEST CONDITIONS: Vd = 5.25V, Id = Temperature = +25 C FREQ Gain Isolation Input Stability IP-3 1dB Comp. Noise Figure (MHz) (db) (db) (db) (db) K Measure (dbm) (dbm) (db) /26/13 Page 3 of 9

9 MMIC Amplifier Typical Performance Data Definitions: Input = -S11 (db) Gain(Power Gain) = S21 (db) Reverse Isolation = -S12 (db) = -S22 (db) TEST CONDITIONS: Vd = 5.00V, Id = Temperature = -45 C FREQ Gain Isolation Input Stability IP-3 1dB Comp. Noise Figure (MHz) (db) (db) (db) (db) K Measure (dbm) (dbm) (db) /26/13 Page 4 of 9

10 MMIC Amplifier Typical Performance Data Definitions: Input = -S11 (db) Gain(Power Gain) = S21 (db) Reverse Isolation = -S12 (db) = -S22 (db) TEST CONDITIONS: Vd = 4.75V, Id = Temperature = -45 C FREQ Gain Isolation Input Stability IP-3 1dB Comp. Noise Figure (MHz) (db) (db) (db) (db) K Measure (dbm) (dbm) (db) /26/13 Page 5 of 9

11 MMIC Amplifier Typical Performance Data Definitions: Input = -S11 (db) Gain(Power Gain) = S21 (db) Reverse Isolation = -S12 (db) = -S22 (db) TEST CONDITIONS: Vd = 5.25V, Id = Temperature = -45 C FREQ Gain Isolation Input Stability IP-3 1dB Comp. Noise Figure (MHz) (db) (db) (db) (db) K Measure (dbm) (dbm) (db) /26/13 Page 6 of 9

12 MMIC Amplifier Typical Performance Data Definitions: Input = -S11 (db) Gain(Power Gain) = S21 (db) Reverse Isolation = -S12 (db) = -S22 (db) TEST CONDITIONS: Vd = 5.00V, Id = Temperature = +85 C FREQ Gain Isolation Input Stability IP-3 1dB Comp. Noise Figure (MHz) (db) (db) (db) (db) K Measure (dbm) (dbm) (db) /26/13 Page 7 of 9

13 MMIC Amplifier Typical Performance Data Definitions: Input = -S11 (db) Gain(Power Gain) = S21 (db) Reverse Isolation = -S12 (db) = -S22 (db) TEST CONDITIONS: Vd = 4.75V, Id = Temperature = +85 C FREQ Gain Isolation Input Stability IP-3 1dB Comp. Noise Figure (MHz) (db) (db) (db) (db) K Measure (dbm) (dbm) (db) /26/13 Page 8 of 9

14 MMIC Amplifier Typical Performance Data Definitions: Input = -S11 (db) Gain(Power Gain) = S21 (db) Reverse Isolation = -S12 (db) = -S22 (db) TEST CONDITIONS: Vd = 5.25V, Id = Temperature = +85 C FREQ Gain Isolation Input Stability IP-3 1dB Comp. Noise Figure (MHz) (db) (db) (db) (db) K Measure (dbm) (dbm) (db) /26/13 Page 9 of 9

15 OUTPUT RETURN LOSS (db) OUTPUT RETURN LOSS (db) INPUT RETURN LOSS (db) INPUT RETURN LOSS (db) ISOLATION (db) ISOLATION (db) GAIN (db) GAIN (db) MMIC Amplifier Typical Performance Curves 40 GAIN vs. FREQUENCY & TEMPERATURE INPUT POWER = dBm, Vd = 5.00V 40 GAIN vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = dBm, Temperature = +25 C C +25 C +85 C V 5.00V 5.25V ISOLATION vs. FREQUENCY & TEMPERATURE INPUT POWER = dBm, Vd = 5.00V 75 ISOLATION vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = dBm, Temperature = +25 C C +25 C +85 C V 5.00V 5.25V INPUT RETURN LOSS vs. FREQUENCY & TEMPERATURE INPUT POWER = dBm, Vd = 5.00V 25 INPUT RETURN LOSS vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = dBm, Temperature = +25 C C C +85 C V V 5.25V OUTPUT RETURN LOSS vs. FREQUENCY & TEMPERATURE INPUT POWER = dBm, Vd = 5.00V -45 C +25 C +85 C OUTPUT RETURN LOSS vs. FREQUENCY & DEVICE VOLTAGE INPUT POWER = dBm, Temperature = +25 C 4.75V 5.00V 5.25V /26/13 Page 1 of 2

16 (db/ C) NOISE FIGURE (db) NOISE FIGURE (db) P1dB (dbm) P1dB (dbm) OUTPUT IP3 (dbm) OUTPUT IP3 (dbm) MMIC Amplifier Typical Performance Curves 50 OUTPUT IP3 vs. FREQUENCY & TEMPERATURE OUTPUT POWER = 5.00dBm, Vd = 5.00V 50 OUTPUT IP3 vs. FREQUENCY & DEVICE VOLTAGE OUTPUT POWER = 5.00dBm, Temperature = +25 C C +25 C +85 C V 5.00V 5.25V P1dB vs. FREQUENCY & TEMPERATURE Vd = 5.00V C +25 C +85 C P1dB vs. FREQUENCY & DEVICE VOLTAGE Temperature = +25 C 4.75V 5.00V 5.25V NOISE FIGURE vs. FREQUENCY & TEMPERATURE Vd = 5.00V C +25 C +85 C NOISE FIGURE vs. FREQUENCY & DEVICE VOLTAGE Temperature = +25 C V 5.00V 5.25V GAIN VARIATION vs. FREQUENCY & TEMPERATURE INPUT POWER = dBm, Vd = 5.00V +25 C to +85 C -45 C to +25 C -45 C to +85 C /26/13 Page 2 of 2

17 Case Style Outline Dimensions DL DL1721 PCB Land Pattern Suggested Layout, Tolerance to be within.002 CASE # A B C D E F G H J K L M N DL (3.00).118 (3.00).045 (1.14).008 (0.).075 (1.91).043 (1.09).012 (0.30).006 (0.15).022 (0.56).026 (0.66).117 (2.97).118 (3.00).075 (1.91) CASE # P Q R S T WT. GRAM DL (0.46).030 (0.76).041 (1.04).018 (0.46).008 (0.) Dimensions are in inches (mm). Tolerances: 3Pl..004, unless otherwise specified. Notes: 1. Case material: LTCC. 2. Termination finish: Nickel-Palladium-Gold plating DL Rev.: P (08/25/17) M File: 98-DL Sheet 4 of 5 This document and its contents are the property of Mini-Circuits.

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20 Mini-Circuits Environmental Specifications ENV68 All Mini-Circuits products are manufactured under exacting quality assurance and control standards, and are capable of meeting published specifications after being subjected to any or all of the following physical and environmental test. Specification Test/Inspection Condition Reference/Spec Operating Temperature -55 to 105 C Individual Model Data Sheet Storage Temperature -65 to 125 C Individual Model Data Sheet Thermal Shock (device level) -55 to 125 C, 100 cycles MIL-STD-2, Method 107 Thermal Shock (board level) -55 to 125 C, 1000 cycles MIL-STD-2, Method 107 Constant Acceleration Y1 plane only, 30 Kg MIL-STD-883, Method 01, Cond. E Vibration 10-00MHz sine, g, 3 axis MIL-STD-2, Method 4, Cond. D Mechanical Shock Y1 plane, 5 pulses,.5ms, 1.5 Kg MIL-STD-2, Method 213, Cond. A PIND Hz MIL-STD-750, Method 52.2 Resistance to Soldering Heat 3X Reflow, Peak Temperature 260 C, electrical End points JESD22-B102 Resistance to Solvent 15 pieces, 5 pieces each solvent, marking permanency MIL-STD-2, Method 215 Moisture Sensitivity Level Hermetic device, MSL-1 by construction JESD22-A113, MSL1/260 Hermeticity Fine Leak, Gross Leak MIL-STD-2, Method 112, Cond. C&D ENV68 Rev: A 08/27/15 M File: ENV68.pdf This document and its contents are the property of Mini-Circuits. Page: 1

21 Mini-Circuits Environmental Specifications ENV68 All Mini-Circuits products are manufactured under exacting quality assurance and control standards, and are capable of meeting published specifications after being subjected to any or all of the following physical and environmental test. Specification Test/Inspection Condition Reference/Spec Autoclave 15 psig, 100% RH, 121 C, 96 hours JEDEC-STD-22-B, Method A102 ENV68 Rev: A 08/27/15 M File: ENV68.pdf This document and its contents are the property of Mini-Circuits. Page: 2