Typical Performance 1. WCDMA 4FA_ACLR dbm LTE20M ACLR dbm

Transcription

1 Device Features OIP3 = 700 MHz Gain = MHz Output P1 db = 700 MHz 50 Ω Cascadable Highly Reliable InGaP/GaAs HBT Technology Lead-free/RoHS-compliant 24L QFN 4X4 SMT package BT33L YYWWXX Product Description The BT33L is a high dynamic range power amplifier housed in RoHS compliant 24L, 4x4mm QFN package. The BT33L uses a high reliability InGaP/GaAs HBT process technology. The BT33L is designed for use where high linearity and gain is required. The BT33L is able to deliver over 22 dbm output power from 200 to 1000MHz while maintaining superior ACLR performance with a few external matching components. All devices are 100% RF/DC screened. Applications Base station /Repeaters Infrastructure Commercial/Industrial/Military wireless system LTE / WCDMA /CDMA Wireless Infrastructure Application Circuits *external matching circuit: refer to the page 4 to 15. Typical Performance 1 Parameter Frequency Unit MHz Gain db S db S db OIP dbm P1dB dbm WCDMA 4FA_ACLR dbm LTE20M ACLR dbm Noise Figure db 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system. 2 OIP3 _ measured with two tones at an output of 20 dbm per tone separated by 1 MHz. * ACLR Channel Power measured at -50dBc. * ACLR Test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz offset, PAR 9.78 at 0.01% Prob. * LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±5MHz offset, PAR Prob. Min. Typical Max. Unit Bandwidth MHz I cq ma Ibias 4.0 ma V CC /V bias 5.0 V R TH 10.9 C/W Absolute Maximum Ratings Parameter Rating Unit Operating Case Temperature -40 to +85 C Storage Temperature -55 to +155 C Junction Temperature +150 C Operating Voltage Supply Current Input RF Power V A dbm *Operation of this device above any of these parameters may result in permanent damage. 1

2 Pin Configuration Pin No. Label 1 V REF 4,5 RF IN 14,15,16 RF OUT/V CC 18 I REF 2,3,6,13,17 N/C 7,8,9,10,11,12 19,20,21,22,23,24 Backside Paddle GND GND V-I Characteristics BeRex Evaluation Board *Dielectric constant _ 4.6 *RF pattern width 52mil *31mil thick FR4 PCB Figure about the reference position of components BT33L BMT332 2

3 Typical Device Data S-parameters (V cc & V Bias =+5V, I cq =400mA, T a =25 C) S-Parameter (V cc & V Bias = 5.0V, I cq = 400mA, T a = 25 C, calibrated to device leads) Freq S11 S11 S21 S21 S12 S12 S22 S22 [MHz] [Mag] [Ang] [Mag] [Ang] [Mag] [Ang] [Mag] [Ang]

4 Application Circuit: 200 MHz Schematic Diagram BOM Marks C pF Samsung C pF Samsung C pF Samsung C pF Samsung C uf Samsung C pF Samsung C N/C - C N/C - C N/C - C N/C - C pF Samsung C N/C - C N/C - C pF Samsung L nH Coilcraft L nH Taiyo Yuden L nH Taiyo Yuden R Ω Samsung R Ω Samsung R Ω Samsung R Ω Samsung U1 4x4 BT33L BEREX PCB Diagram Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin C6 5.5mm Input pin L2 2.5mm Output pin C11 2.0mm Output pin L3 3.4mm Output pin C17 5.7mm 4

5 Typical Performance 5

6 Typical Performance 3GPP WCDMA TM1 +64DPCH 4FA 3GPP LTE E-TM3.1 20MHz 6

7 Application Circuit: 540 MHz Schematic Diagram BOM Marks C pF Samsung C pF Samsung C pF Samsung C pF Samsung C uf Samsung C N/C - C N/C - C pF Samsung C pF Samsung C pF Samsung C N/C - C pF Samsung C N/C - C pF Samsung L nH Coilcraft L nH Taiyo Yuden L nH Taiyo Yuden R Ω Samsung R Ω Samsung R Ω Samsung R Ω Samsung U1 4x4 BT33L BEREX PCB Diagram Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin L2 5.5mm Input pin C13 2.5mm Input pin C10 1.3mm Output pin C11 1.8mm Output pin L3 3.4mm Output pin C17 7.0mm 7

8 Typical Performance 8

9 Typical Performance 3GPP WCDMA TM1 +64DPCH 4FA 3GPP LTE E-TM3.1 20MHz 9

10 Application Circuit: 700 MHz Schematic Diagram BOM Marks C pF Samsung C pF Samsung C pF Samsung C pF Samsung C uf Samsung C N/C - C pF Samsung C pF Samsung C pF Samsung C pF Samsung C N/C - C pF Samsung C pF Samsung C N/C - L nH Coilcraft L nH Taiyo Yuden L nH Taiyo Yuden R Ω Samsung R Ω Samsung R Ω Samsung R Ω Samsung U1 4x4 BT33L BEREX PCB Diagram Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin L2 5.0mm Input pin C13 2.5mm Input pin C10 1.0mm Output pin C11 2.5mm Output pin L3 3.3mm Output pin C16 8.3mm 10

11 Typical Performance 11

12 Typical Performance 3GPP WCDMA TM1 +64DPCH 4FA 3GPP LTE E-TM3.1 20MHz 12

13 Application Circuit: 900 MHz Schematic Diagram BOM Marks C pF Samsung C pF Samsung C pF Samsung C pF Samsung C uf Samsung C N/C - C N/C - C pF Samsung C pF Samsung C N/C - C N/C - C pF Samsung C N/C - C pF Samsung L nH Coilcraft L nH Taiyo Yuden L nH Taiyo Yuden R Ω Samsung R Ω Samsung R Ω Samsung R Ω Samsung U1 4x4 BT33L BEREX PCB Diagram Notice Below information is subject to change as conditions of the substrate. Reference Object Distance Input pin L2 5.5mm Input pin C13 2.5mm Input pin C10 1.3mm Output pin L3 3.3mm Output pin C17 5.6mm 13

14 Typical Performance 14

15 Typical Performance 3GPP WCDMA TM1 +64DPCH 4FA 3GPP LTE E-TM3.1 20MHz 15

16 Typical Performance (Pout vs Icc) 16

17 Package Outline Dimension 17

18 Suggested PCB Land Pattern and PAD Layout Tape & Reel Packaging information: Tape Width (mm): 12 / Reel Size (inches): 7 Device Cavity Pitch (mm): 8 / Devices Per Reel:

19 Package Marking BT33L YYWWXX YY = Year, WW = Working Week, XX = Wafer No. Lead plating finish 100% Tin Matte finish (All BeRex products undergoes a 1 hour, 150 degree C, Anneal bake to eliminate thin whisker growth concerns.) MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 1C Passes 1000V to < 2000 V Human Body Model (HBM) JEDEC Standard JESD22-A114B ESD Rating: Value: Test: Standard: Class C3 Passes >1000V Charged Device Model (CDM) JEDEC Standard JESD22-C101F MSL Rating: Standard: Level 1 at +260 C convection reflow JEDEC Standard J-STD-020 NATO CAGE code: 2 N 9 6 F 19