M0360. Rev: /08
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- Opal Marshall
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1 MEMORY SPECIFICATIONS 32MX8 BASED 33,554,432words x 72Bit Synchronous Dynamic RAM Memory Module (Unbuffered DIMM) Centon's 256MB ECC UNBUFFERED Memory Module is 33,554,432 words by 72Bit Synchronous Dynamic RAM Memory Module which is assembled with 9 pieces of a 32MX8Bit TSOP Synchronous Dynamic RAM stacks on the printed circuit board. The module is optimized for high density and large capacity in a compact size MB 2008 CENTON ELECTRONI, INC., ALISO VIEJO, CA ALL SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE.
2 Pinout Information 1 Vss 29 B Vss 113 B * NC 59 VDD RAS 143 VDD 4 32 Vss Vss A0 61 NC A1 145 NC 6 VDD 34 A2 62 NC 90 VDD 118 A3 146 NC 7 35 A4 63 CKE1* A5 147 NC 8 36 A6 64 Vss A7 148 Vss 9 37 A A A BA DQ8 39 BA A Vss 40 VDD 68 Vss 96 Vss 124 VDD 152 Vss 13 DQ9 41 VDD CK CK A Vss Vss NC CKE VDD * 157 VDD 18 VDD 46 B VDD 130 B B B NC NC CB0 49 VDD CB4 133 VDD CB1 50 NC 78 Vss 106 CB5 134 NC 162 Vss 23 Vss 51 NC 79 CK2 107 Vss 135 NC 163 CK3 24 NC 52 CB2 80 NC 108 NC 136 CB6 164 NC 25 NC 53 CB3 81 NC 109 NC 137 CB7 165 SA0 26 VDD 54 Vss 82 SDA 110 VDD 138 Vss 166 SA1 27 WE SLC 111 CAS SA2 28 B VDD 112 B VDD Pin Name Function A0-A12 Address input (Row=A0-A12,Column=A0-A9) BA0-BA1 Select bank -3 Data input/output CB0-CB7 Check Bit (Data-in/Data-out) CK0,CK2 Clock inputs CKE0, Clock enable input 0,2 Chip select input RAS Row address strobe CAS Column address strobe WE Write enable B0-B7 Data input output mask VDD Power supply (3.3V) VSS Ground SDA Serial data I/O SCL Serial clock SA0-SA2 Address in EEPROM NC No connection Note: * : these pins are not used in this module. CPCB MB FEATURES * 33,554,432 words by 72 bits organization * Utilizes PC133 Compliant, SDRAM components * NON-Buffered, 4 clock implementation * Single power supply of 3.3V +/- 10% * Fully Synchronous with all signals registered positive edge of clock * CAS Latency: 3 * Support progammable Mode Register * Burst length; 1, 2, 4, 8 or full page * 4096 refresh cycles / 64ms * Supports Auto Refresh and Self refresh * All inputs and outputs LVTTL compatible * 168 pin JEDEC pin compatible * RoHS compliant COMPATIBILITY Centon s 256MB Memory ECC UNBUFFERED Module is fully compatible with industry standard 168 pin PC133 Memory Modules. APPLICATION Main/Expansion Memory Unit for personal omputers, workstations and Power PCs. ENVIRONMENT OPERATING STORAGE TEMPERATURE 0 o C to 70 o C -55 o C to 125 o C HUMIDITY 20% to 80% 5% to 80% WARRANTY Centon will repair or replace any Centon memory product that fails due to defective material or workmanship under normal use for the life of the product CENTON ELECTRONI, INC., ALISO VIEJO, CA ALL SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE.
3 Absolute Maximum Ratings Parameter Symbol Rating Units Supply Voltage VCC -1 to 4.6 V Voltage on any pin relative to VSS VIN, VOUT -1 to 4.6 V Short circuit output current IOUT 50 ma Power dissipation Pd 9 W Operating temperature TOPR 0 to +70 C Storage temperature TSTG -55 to +125 C Notes: 1. Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. 2. Functional operation should be restricted to recommended operation conditions. 3. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Recommended DC Operating Conditions Parameter Symbol Min Typ Max Notes Unit Supply Voltage V CC V Input Voltage High V IH V CC+0.3 1,2 V Input Low Voltage V IL ,3 V Notes: 1. All voltages are referenced to VSS=0V. 2. VIH(m ax) = VCC+1.2V for pulse width with < 3ns of duration 3. VIL(m in) = VSS -1.2V for pulse width with < 3ns of duration. DC Characteristics I (Ta=0 to 70C, Vcc=3.3+/-0.3V) Parameter (Test Condition) Input leakage current (VIN=0 to 3.6V, all other pins not under test=0v) Output leakage current (DOUT is disabled,vout=0 to 3.6V) Output low voltage (lol=2.0ma) Output high voltage (IOH=-2.0mA) ILI ua ILO ua VOL 0.4 V VOH 2.4 V DC Characteristics II (Ta=0 to 70C, Vcc=3.3+/-0.3V) Parameter Test Condition Operating Current Burst Length = 1,tRC>tRC(min),lOL = 0mA Icc ma Precharge standby CKE<VIL(max),tCK=min Icc2P 18 ma current in power-down mode CKE<VIL(max),tCK= Icc2PS 18 ma Precharge standby current in non powerdown mode Active standby current in power-down mode CKE>VIH(min)=/>VIH(min),tCK=min, Input signals are changed one time during 20ns CKE>VIH(min),CLK<VIL(max),tCLK=, Input signals are stable CKE<VIL(max),tCLK=min CKE & CLK<VIL(max),tCLK= Icc2N 180 ma Icc2NS 90 ma Icc3P 54 ma Icc3PS 54 ma Active standby current CKE>VIH(min), />VIH(min),tCLK=min, Input signals are in non power-down changed one time during 20ns Icc3N 225 ma mode CKE>VIH(min),CLK<VIL(max), tclk=, Input signals are stable Icc3NS 225 ma Burst mode current tclk=min,iol=0ma,all banks activated Icc ma Auto-refresh current trc>trc(min) Icc ma self-refresh current CKE < 0.2V 27 Icc6 LP ma Notes: 1. Icc1 & Icc4 depend on output loading and cycle rates. Specified values are measured with output open. 2. Min. of trcc (Refresh /RAS cycle time) is shown at AC CHARACTERISTI II. 3. LP indicates Low Power self-refresh current 2008 CENTON ELECTRONI, INC., ALISO VIEJO, CA ALL SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE.
4 Capacitance (Vcc=3.3V, Ta = 25deg C, f = 1MHz) Parameter Symbol Max Unit Address (A0 - A12, BA0-BA1) CADD 45 pf RAS, CAS, WE C IN 45 pf CKE (CKE0) CCKE 45 pf Clock (CLK0,CLK2) CCLK 30 pf (0,2) C 25 pf (0-7) C 10 pf DQ (-3) COUT 12 pf AC Characteristics I (Ta=0 to 70C, VCC=3.3V+/-0.3V,Vss=0V) Parameter Clock Cycle time /CAS Latency 3 tck ns Clock to valid output delay /CAS Latency 3 Tsac ns Output data hold time /CAS Latency 3 toh 3 2 ns Clock to Output in High-Z tohz 5.4 ns Clock to Output in Low-Z tolz 1 ns Clock high pulse width tch ns Clock low pulse width tcl ns Address setup time tas ns Address hold time tah ns Data input setup time tds ns Data input hold time tdh ns Note: 1. Assume tr/tf (input rise and fall time) is 1ns. 2. Access times to be measured with input signals of 1V/ns edge rate. AC Characteristics II (Ta=0 to 70C, VCC=3.3V+/-0.3V,Vss=0V) Parameter /RAS cycle time /RAS to /CAS Delay /RAS to /RAS Bank Active Delay /RAS precharge time /RAS active time /CAS to /CAS Delay Data-In to Precharge Command (Write Recovery) Mode Register set to Active Delay Refresh interval time trc(min) 65 ns trcd 20 ns trrd 15 ns trp 20 ns tras k ns tccd 1 CLK trdl 2 CLK trsc 2 CLK tref 64 ms 2008 CENTON ELECTRONI, INC., ALISO VIEJO, CA ALL SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE.
5 Block Diagram 0 B0 B1 DQ8 DQ U1 U B4 B5 U2 U4 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 2 B B U5 U7 U B6 B7 U6 U8 RAS CAS WE A0-An BA0,BA1 CKE0 VDD VSS CLK0 CLK2 SCL U1, U2, U3 U4, U5 U6, U7 U8, U9 SPD U19 A0 A1 A2 SA0 SA1 SA2 CLK1 CLK3 SDA GND GND 2008 CENTON ELECTRONI, INC., ALISO VIEJO, CA ALL SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE.
6 Mechanical Drawing 0.118"(2X) 5.250"±0.006" 5.014" 0.100" Max "±0.006" 0.118"(2X) 0.350" 0.450" 1.450" DETAIL A DETAIL B 4.550" DETAIL C 2.150" 0.050"±0.004" 0.157"±0.004"(2X) 0.100" MAX.(2X) R0.050"(4X) R0.079"(2X) 0.700" 0.250" 0.123"±0.005" 0.250" 0.123"±0.005" 0.100" Min 0.008"±0.006" 0.079"±0.004" 0.079"±0.004" 0.039"±0.002" 0.050" TYP. DETAIL A DETAIL B DETAIL C CENTON NEW ENGLAND TEL: (800) (800) FAX: (978) CENTON NORTHEAST TEL: (631) (800) FAX: (631) CENTON SOUTHWEST TEL: (949) (800) FAX: (949) CENTON ELECTRONI, INC., ALISO VIEJO, CA ALL SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE.
M Rev: /10
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