Onyx: A Prototype Phase-Change Memory Storage Array
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1 Onyx: A Prototype Phase-Change Memory Storage Array Ameen Akel * Adrian Caulfield, Todor Mollov, Rajesh Gupta, Steven Swanson Non-Volatile Systems Laboratory, Department of Computer Science and Engineering University of California, San Diego * Now at Micron Technology 1
2 4 KB Operation Request Latencies Disk Flash Current PCM Projected PCM Log Operation Request Latency (us) Write Read 2
3 Advantages of Studying PCM SSDs Understand current PCM performance With current storage infrastructure Versus other NV tech: e.g. Flash SSDs PCM performance may differ from simulation Variance in write latency due to data Wear-out characteristics Use real applications to gauge performance Understand how software should change for PCM Prepare to integrate future-generation PCM 3
4 Overview Motivation PCM Devices Technology Overview Micron P8P Devices Onyx Architecture Logical Architecture PCM DIMMs Physical Architecture Performance Analysis Applications and Conclusions 4
5 PCM: The Device Level PCM storage medium: Chalcogenide Resistance depends on molecular phase Writes Heaters are attached to the chalcogenide Current passed through heaters to change phase Allows bit-alterable writes Reads Measure resistance through chalcogenide area Resistance sensed by ability to sink current M. Breitwisch et al VLSI '07 5
6 PCM: The Device Level PCM storage medium: Chalcogenide Resistance depends on molecular phase Writes Heaters are attached to the chalcogenide Current passed through heaters to change phase Allows bit-alterable writes Reads Measure resistance through chalcogenide area Resistance sensed by ability to sink current XRD-measurements amorph fcc hexagonal M. Wuttig, et. al., FP6 Project CAMELS. 6
7 PCM Write Operations in Depth Material heated to > 600 C then cooled quickly Amorphous ~ 350 C then cooled slowly Crystalline Set and reset Reset 0 state Set 1 state 10 ns ns 7
8 PCM Projections Future PCM latency projections * : Operation Read Set Reset Latency 48 ns 150 ns 40 ns Process node progression: 90, 45, 32, 20, 9 nm *B. C. Lee, et. al. Architecting Phase Change Memory as a Scalable DRAM Alternative. ISCA
9 P8P PCM First-generation NOR-flash replacement Part: NP8P128A13B1760E (P8P) Process Node: 90 nm Capacity: 16 MB Per Device Bandwidth, Latency, Current Write (64 bytes): 0.5 MB/s, 120 us, 35 ma Read (16 bytes): 48.6 MB/s, 314 ns, 15 ma Lifetime: One million writes until first bit error 9
10 Overview Motivation PCM Devices Technology Overview Micron P8P Devices Onyx Architecture Logical Architecture PCM DIMMs Physical Architecture Performance Analysis Applications and Conclusions 10
11 Moneta: SSD for Emulated Fast NVMs CPU Moneta Application File System OS IO Stack Moneta Driver DRAM PCIe DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM-based NV-SSD emulator Learn by building Hardware Controller & interconnect Software Driver, file system, apps Uses optimized software stack Decreases request latency Improves request concurrency 11
12 Onyx: Phase-Change Memory SSD Application File System Based on Moneta * OS IO Stack Onyx Driver Shares hardware Shares software stack CPU DRAM DRAM PCM replaces DRAM Uses real PCM Onyx PCIe Custom PCM controller PCM PCM PCM PCM PCM PCM *A. M. Caulfield, et. al. Moneta: A highperformance storage array architecture for next-generation, non-volatile memories. MICRO
13 Moneta/Onyx Architecture Host via PIO Request Queue Scoreboard Ring Control Transfer Buffers DMA Control Ring (4 GB/s) 2GB PCM 2GB PCM 2GB PCM Tag Status Registers 2GB PCM Host via DMA 13
14 Onyx PCM Controller Request Completion Late Completion On PCM write completion Early Completion On request reception Start-Gap Wear Leveling * Low overhead wear leveling (two registers + logic) Prevents hot spots from wearing out memory Rotates line in memory every gap interval *M. K. Qureshi, et. al. Enhancing lifetime and security of PCMbased main memory with start-gap wear leveling. MICRO
15 Closer Look at a PCM DIMM 8 Ranks of 5 PCM devices 64 data bits + 16 ECC bits Effectively 16 ranks per memory interface Shared control and data lines Capacity: 640 MB / DIMM Address[0:25] Device 0 Device 1 Device 2 Device 3 Device 4 Data[0:15] Data[16:31] Data[32:47] Data[48:63] Data[64:79] 15
16 Prototyping Advanced SSDs Built on RAMP s BEE3 board Four FPGAs connected in a ring Four DIMM slots per FPGA PCIe 1.1 x8 host connection System capacity: 10 GB 16
17 Overview Motivation PCM Devices Technology Overview Micron P8P Devices Onyx Architecture Logical Architecture PCM DIMMs Physical Architecture Performance Analysis Applications and Conclusions 17
18 Read Performance 2000 Onyx FusionIO Moneta Bandwidth (MB/s) Request Size (KB) 18
19 Write Performance 2000 Onyx-Late Onyx-Early FusionIO Moneta Bandwidth (MB/s) Request Size (KB) 19
20 BerkeleyDB Performance 8000 Onyx FusionIO Moneta Transactions / Second BTree BDB Benchmark HashTable 20
21 Potential PCM Applications As a read cache First-gen PCM read speeds compete with flash Next-gen PCM should improve read performance Replace DRAM in high-performance apps PCM cost will likely drop below DRAM Will scale aggressively past DRAM Outpace flash in high-performance SSDs Reduces complexity of management Provides higher-rated lifetime Saves power, logic, and design time 21
22 Conclusions Onyx designed to maximize PCM performance More improvements possible as PCM scales Onyx architecture will scale with PCM Onyx will benefit from faster reads and writes PCM simplifies SSD management relative to flash and improves small access performance 22
23 Thank You! Questions? 23
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