Introduction to Integrated Flash Controller and a Comparison with Enhanced Local Bus Controller
|
|
- Alexandrina McCormick
- 6 years ago
- Views:
Transcription
1 Introduction to Integrated Flash Controller and a Comparison with Enhanced Local Bus Controller FTF-NET-F0151 Ram Gudemaranahalli Applications Engineer A P R TM External Use
2 Session Introduction This session provides an introduction to the Integrated Flash Controller (IFC) and the different sub controllers within it. It also provides a brief comparison with the older enhanced Local Bus Controller (elbc) to highlight the different merits that IFC has. External Use 1
3 Session Objectives After completing this session you will be able to: Understand the purpose of IFC Be able to understand different controllers within IFC Understand how to interface IFC with different types of flash memories Compare merits and demerits of IFC with respect to elbc External Use 2
4 Agenda Introduction to Integrated Flash Controller (IFC) Differences between IFC and elbc (enhanced Local Bus Controller) NOR controller NAND controller GPCM controller Normal GPCM GASIC controller External Use 3
5 Usage of Integrated Flash Controller (IFC) Role of IFC After the power is turned on, a typical system: Starts execution from non-volatile memory, typically NOR/NAND flash memory Copies the code to main memory (DDRx) Starts the execution from main memory Core U-boot/ BIOS Flash Storage ROM/Hard Drive Main Memory DDRx External Use 4
6 Initial Boot A system must be able to talk to non-volatile memory without any software configuration steps Integrated Flash Controller does this initial booting job with two controllers: NOR controller Standard and page mode NOR flash Support booting NAND flash control machine (FCM) NAND memory for storage Support booting GPCM Normal GPCM: memory addressed devices, standard NOR flash, SRAM, ROM, FPGA Generic ASIC: FPGA No booting External Use 5
7 IFC Versions Currently three major versions of IFC: rev 1.0, rev 1.1 and rev 2.0 How to know the version number IFC revision control register (IFC_REV), offset 0x0 Some improvements in rev rev2.0 Synchronous NOR support. Improved NAND SRAM size and 16KB page support Internal DMA IFC is little endian IFC Usage: IFC1.0: P1010, P2021 IFC 1.1: B9164,B3241, T4240, P1040., P2022, T1040, T2080, LS1020a Rev 2.0: To be announced External Use 6
8 IFC, elbc Comparison Machine Features IFC elbc Devices max page size Error correction per sector Flexible timing control allows interfacing with proprietary NAND IFC rev1.0: 4KB IFC rev1.1: 8KB IFC rev 2.0: 16KB IFC rev1.0: 4-bit, 8-bit/512Byte IFC rev1.1: 4-bit, 8-bit/512Byte 24-bit, 40-bit/1Kbyte Yes 2KB 1-bit /512Bytes Limited capability NAND Flash Provide cache, copy-back and multi-plane command support Programmable command and data transfer sequences BBI page position Configurable block size constraint to multiple of 32 pages, up to 2048 pages Yes No Up to 15 Up to 8 Configurable between (second and last page) First two pages of each block Internal SRAM size 9KB, 18KB(Rev2.0) 5KB Max initial boot code size for NAND flash 8KB,16KB(Rev 2.0) 4KB Yes No SRAM parallelism Not-Allowed Allowed External Use 7
9 IFC, elbc Comparison (continued) Machine Features IFC elbc Compatible with page mode NOR flash Yes No Support True-Address/Data-Muxed devices //recheck Yes No NOR Flash Flexible timing control allows interfacing with variety of NOR devices Yes Limited capability Synchronous NOR support Yes(Rev2.0) No Other GPCM Yes (with enhanced timing control) UPM No Yes Yes GASIC Yes No External Use 8
10 Interface Signals Name IFC elbc Address/Data IFC_AD LAD Address IFC_ADDR LA Address Valid IFC_AVD LALE/LFALE Chip Select IFC_CS_B LCS Write Enable IFC_WE_B LWE_B Command Latch Enable IFC_CLE LFCLE Output Enable IFC_OE_B LOE_B Write Protect IFC_WP_B LFWP_B Ready/Busy IFC_RB_B/IFCTA_B LFRB_B Buffer Control IFC_BCTL LBCTL Parity IFC_PAR[0:3] LDP[0:1] Parity Error IFC_PERR Not Available Clock IFC_CLK LCLK External Use 9
11 NOR Flash Control Machine External Use 10
12 Performance NOR Controller Support standard asynchronous NOR flash and synchronous NOR flash(rev 2.0) Support page mode NOR flash NOR Flash Type No support for synchronous burst mode NOR flash Burst Mode Supports address data multiplexed AVD-type NOR device Data bus width of 8/16/32 Standard Page Mode Complexity External Use 11
13 Page Mode Flash Standard NOR flash vs. Page Mode NOR tacc = 100 ns, tpacc = 25ns For 16-bit interface and a 32-byte cache line read Standard flash: 100ns x 16 = 1600 ns Page mode: 100ns + 15*25ns= 475ns #Denotes logic low signal External Use 12
14 Two Types of NOR Flash Non-AVD Regular NOR Flash Address is driven before CE# Set CSORn[NOR_MODE]=0 AVD NOR Flash Address is driven along with AVD# Set CSORn[NOR_MODE]=1 #Denotes logic low signal External Use 13
15 Interfacing IFC Non-AVD Regular 16 bit NOR Flash IFC NOR Flash IFC_AD[0:15] IFC_AD[0:15] latch latch_addr[0:15] DQ[15:0] A[23:8] IFC_ADDR[16:23] IFC_ADDR[24] x A[7:0] IFC_AVD IFC_OE# IFC_WE# IFC_CS# IFC_WP# AVD# OE# WE# CE# WP# HRESET NC RST# WAIT CLK P1010 GND #Denotes logic low signal External Use 14
16 Interfacing IFC AVD-type 16 bit NOR Flash IFC NOR Flash IFC_AD[0:15] IFC_ADDR[16:23] IFC_AD[0:15] IFC_ADDR[16:23] DQ[15:0] A[23:8] A[7:0] IFC_AVD IFC_OE# IFC_WE# IFC_CS# IFC_WP# AVD# OE# WE# CE# WP# HRESET NC RST# WAIT CLK P1010 #Denotes logic low signal GND External Use 15
17 Key Points in NOR Setup External latch is not needed for AVD NOR flash For non-avd NOR flash, address latch is needed After power on reset, CSORn[PGRD_EN] is set to 0 Software must set this bit to enable page read mode When choosing page-mode flash, page size must be same as cache line (ie: 32 bytes) Take advantage of page mode Use DMA to copy code from NOR flash to DDR Enable cache External Use 16
18 NAND Flash Control Machine External Use 17
19 Overview of NAND Flash Higher-density / lower-cost than regular flash (NOR flash) IO device using commands to read/write No address bus Page-oriented, not suitable for random access Possible bit error Usually a certain number of blocks are marked bad by manufacturer During the operation, more blocks can go bad ECC is a must No execute in place (XIP) Long wait time for random address Possible bit error only known after whole page read and ECC check External Use 18
20 NAND Controller Features and Facts Support x8/x16 NAND devices ONFI (Open NAND Flash Interface) asynchronous interface with mandatory commands BCH coding for 4/8 bit error correction per block IFC rev1.1 adds support of 24-bit/1K, 40-bit/1K Page size: Support 512 bytes, 2K and 4K IFC rev1.1 adds support of 8K page IFC rev 2.0 adds support of 16K page Configurable block size, from 32 to 2048 pages per block External Use 19
21 SRAM Buffer SRAM Buffer System Bus NAND interface NAND devices 4K Due to the slowness of NAND devices, SRAM buffer is used to decouple the system bus from NAND accessing System bus read/write to the memory bank (defined by CSPR[BA]/AMASK[AM]) actually accesses SRAM For NAND write: (1) Data is transferred to SRAM. (2) Start NAND write with NANDSEQ_STRT; data transferred from SRAM to NAND During the write, SRAM must not be accessed For NAND read: (1) Start the NAND read with NANDSEQ_STRT; Data transferred from NAND to SRAM SRAM must not be accessed during the read operation (2) Core accesses data from SRAM External Use 20
22 How Does NAND Controller Work Different vendors might have slightly different sequences Commands might be different, especially for small page NAND FCM takes a generic approach: User has flexibility/responsibility to define command sequence based on NAND NAND controller also supports a few standard commands Programming model 1. Generate the command sequence 2. AC timing control External Use 21
23 How to Generate the Command Sequence Method1: NAND_FIR0-2 op0 op1 CA0 op2 RA0 op3 WBCD op4 op5 NOP op6 op7 op8 op9 op10 op11 op12 op13 op14 NAND_FIR0 NAND_FIR1 NAND_FIR2 cmd0 cmd1 cmd2 cmd3 cmd4 cmd5 cmd6 cmd7 CW0 NAND_FCR0 NAND_FCR1 CMD1 ONFI 2.2 Page Program Cycle type CMD CMD DQ 80h 10h Number of column address cycles depends on page size NAND_CSEL CSEL Select which CS MS IFC_COL0 CA External Use 22 Start the operation RA IFC_ROW0 NANDSEQ_STRT FIR_STRT Number of row address cycles depends on CSOR_NAND[RAL] BC NAND_BC Number of data cycles depends on NAND_BC BC=0 for whole page
24 NAND AC Timing Control NAND interface is asynchronous all the control and data signals have to maintain proper AC timing AC timing is defined in four registers IFC_FTIM0_CSn_NAND, IFC_FTIM1_CSn_NAND IFC_FTIM2_CSn_NAND, IFC_FTIM3_CSn_NAND External Use 23
25 AC Timing Control: Mapping Between ONFI Spec and IFC Registers ONFI AC Timing Parameter tadl tals, tcls, tds, twp talh, tclh, tdh, twh trp treh trr twb twc IFC control FTIM1_CSx[TADLE] FTIM0_CSx[TWP] IFC drives ALE/CLE/DQx at the falling edge of WE#. TWP > max{tals, tcls, tds, twp} FTIM0_CSx[TWCHT] IFC negates ALE/CLE/DQx at the same time after WE# high. TWCHT > max{talh, tclh, tdh} FTIM0_CSx[TWH] FTIM1_CSx[TRP] FTIM2_CSx[TREH] FTIM1_CSx[TRR] FTIM1_CSx[TWBE] TWH+TWP > twc External Use 24
26 AC Timing Control ONFI AC Timing Parameter trc tww tcs tch IFC Control TRP + TREH > trc FTIM3_CSx[TWW] Command latch cycle: Satisfied automatically during Data write cycle: FTIM0_CSx[TWH] > tch trhz trea twhr tir trhw CSORx_NAND[TRHZ] > trhz FTIM2_CSx[TRAD] Data sampling point trp-trea+trhoh FTIM2_CSx[TWHRE] Satisfied automatically since it is much smaller than twhr CSORx_NAND[TRHZ] > trhw External Use 25
27 Booting from NAND and Reset Configuration NAND controller is selected as the boot ROM location cfg_rcw_src example: 1_0000_00xx: 8-bit NAND Flash, 512-byte page, 32 pages/block 1_0000_01xx :8-bit NAND Flash, 2 KB page, 64 pages/block NAND controller searches for a valid boot block Reads data until 8K SRAM buffer is filled ECC errors are corrected if possible and enabled. Boot stops if error is uncorrectable, the device reset sequence is halted indefinitely until Poreset_b is asserted The CPU is released to start fetching instructions from the SRAM buffer External Use 26
28 Interfacing 8-bit NAND with P1010 Bit reversing External Use 27
29 Interfacing 16-bit NAND with P1010 For elbc For IFC Byte swapping Bit reversing External Use 28
30 GPCM External Use 29
31 GPCM Controller GPCM supports two modes: Normal GPCM Generic ASIC Enable GPCM and select mode CSPRn[MSEL]: 0b10 for GPCM CSORn[GPMODE]: 0 for normal GPCM, 1 for generic ASIC Normal GPCM is similar to elbc GPCM with new programming model Generic ASIC is a new function External Use 30
32 Normal GPCM Mode: Write Normal GPCM can be used to generate standard NOR flash interface compatible control signals ALE timing controlled by FTIM0_CSn TACSE: Address to CS assertion TEADC: Pulse width of ALE TEAHC: ALE to address hold time WE timing for read controlled by FTIM2_CSn TCS: CS to WE assertion time TWP: WE pulse width TCH: WE negation to CS negation GPCM Write External Use 31
33 Normal GPCM Mode: Read ALE timing controlled by FTIM0_CSn TACSE: Address to CS assertion TEADC: Pulse width of ALE TEAHC: ALE to address hold time OE timing for read controlled by FTIM1_CSn TACO: CS to OE time TRAD: OE pulse width GPCM Read External Use 32
34 Normal GPCM Mode: External Termination Option for external termination by IFCTA CSORn[RGETA], CSORn[WGETA] 0: Terminated by internal TRAD counter for read or TWP for write or IFCTA if it is asserted earlier than internal timer expiration 1: Only terminated by assertion of IFCTA, not internal timer This feature is useful if response time is variable External Use 33
35 Generic ASIC A simple interface useful for talking to FPGA IFC supports the following features on GASIC interface: Support for x8/16-bit device Address and data are shared on AD I/O bus; dedicated address pins are not used The following address and data sequences will be supported on I/O bus 16-bit I/O: AADD 8-bit I/O: AAAADDDD Configurable even/odd parity on address/data bus supported Parity error detection supported GASIC interface does not support: Boot from GASIC Burst transaction External Use 34
36 Generic ASIC: 16-bit Interface Read External Use 35
37 Generic ASIC: 16-bit Interface Write External Use 36
38 Unsupported Features GPCM Autoboot No machine interleaving Command based NOR flash External Use 37
39 Introducing The QorIQ LS2 Family Breakthrough, software-defined approach to advance the world s new virtualized networks New, high-performance architecture built with ease-of-use in mind Groundbreaking, flexible architecture that abstracts hardware complexity and enables customers to focus their resources on innovation at the application level Optimized for software-defined networking applications Balanced integration of CPU performance with network I/O and C-programmable datapath acceleration that is right-sized (power/performance/cost) to deliver advanced SoC technology for the SDN era Extending the industry s broadest portfolio of 64-bit multicore SoCs Built on the ARM Cortex -A57 architecture with integrated L2 switch enabling interconnect and peripherals to provide a complete system-on-chip solution External Use 38
40 QorIQ LS2 Family Key Features SDN/NFV Switching Data Center Wireless Access Unprecedented performance and ease of use for smarter, more capable networks High performance cores with leading interconnect and memory bandwidth 8x ARM Cortex-A57 cores, 2.0GHz, 4MB L2 cache, w Neon SIMD 1MB L3 platform cache w/ecc 2x 64b DDR4 up to 2.4GT/s A high performance datapath designed with software developers in mind New datapath hardware and abstracted acceleration that is called via standard Linux objects 40 Gbps Packet processing performance with 20Gbps acceleration (crypto, Pattern Match/RegEx, Data Compression) Management complex provides all init/setup/teardown tasks Leading network I/O integration 8x1/10GbE + 8x1G, MACSec on up to 4x 1/10GbE Integrated L2 switching capability for cost savings 4 PCIe Gen3 controllers, 1 with SR-IOV support 2 x SATA 3.0, 2 x USB 3.0 with PHY External Use 39
41 See the LS2 Family First in the Tech Lab! 4 new demos built on QorIQ LS2 processors: Performance Analysis Made Easy Leave the Packet Processing To Us Combining Ease of Use with Performance Tools for Every Step of Your Design External Use 40
42 Freescale Semiconductor, Inc. External Use
43 Backup slides Address shifting External Use 42
44 Multiplexed Bus Address and data are multiplexed in the same pins to reduce pin counts. LALE (Local bus Address Latch Enable): Indicates the address phase There are two main variations: 32-bit bus: LAD[0:31] LA[27:31] 16-bit bus: LAD[0:15] LA[16:31] lad[0:26] la[0:26] lad[0:15] la[0:15] lale latch la[0:31] lale latch la[0:31] la[27:31] la[16:31] Advantage: Higher performance Advantage: Fewer pins, narrower latch External Use 43
45 How FCM Operates Write data to NAND 1. Initialize FCM registers for write 2. Set FMR[OP]=00, normal operation Fill the buffer with the data 3. Set FMR[OP]=11 after the data (usually one whole page) is in the buffer 4. Dummy write to memory bank or write to LSOR to start the write sequence 5. FCM reads data from buffer, writes to NAND Core is free to access the other 4K buffer when FCM writes to NAND core OP=00 OP=11 data 0 data 1 4K data n 4K write to LSOR or dummy write data 0 data 1 data n Large Page NAND External Use 44
46 Freescale Semiconductor, Inc. External Use
Introduction to Pre-Boot Loader Supported by QorIQ Processors
Introduction to Pre-Boot Loader Supported by QorIQ Processors FTF-NET-F0152 Zhongcai Zhou Application Engineer A P R. 2 0 1 4 TM External Use Introduction What does Pre-Boot Loader (PBL) do? Device configuration
More informationNAND Flash Module DESCRIPTION: FEATURES: 69F64G16, 69F128G16, 69F256G16. DDC s 64, 128, and 256 Gb high density NAND flash features a x8 wide bus.
Module 69F64G16, 69F128G16, 69F256G16 FEATURES: High density 64, 128, or 256 Gb Supports higher speed designs with less capacitance/fewer I/O's to drive NAND Flash Interface Single Level Cell (SLC) Technology
More informationNAND Flash Module DESCRIPTION: FEATURES: 29F32G08. DDC s 32 Gb high density NAND flash features a x8 wide bus.
Module FEATURES: High density Based on 32Gb x8 NAND flash die Supports higher speed designs with less capacitance/fewer I/O's to drive NAND Flash Interface Single Level Cell (SLC) Technology ONFI 2.2 Compliant
More informationNAND Flash Module DESCRIPTION: FEATURES: 69F12G24, 69F24G24
Module FEATURES: High density 12 Gb or 24 Gb Based on 4 Gb x8 NAND flash die Supports higher speed designs with less capacitance/fewer I/O's to drive NAND Flash Interface Single Level Cell (SLC) Technology
More informationNAND Flash Module DESCRIPTION: FEATURES: 69F96G24, 69F192G24
Module FEATURES: High density 96 Gb or 192 Gb Based on 32 Gb x8 NAND flash die Supports higher speed designs with less capacitance/fewer I/O's to drive NAND Flash Interface Single Level Cell (SLC) Technology
More information1G-BIT 3.3V NAND FLASH MEMORY
MIGRATION FROM 1G-BIT 3.3V NAND FLASH MEMORY 1 Table of Contents 1. INTRODUCTION... 3 2. FEATURES COMPARISON... 3 3. DC ELECTRICAL CHARACTERISTICS NO DIFFERENCE... 4 4. AC TIMING CHARACTERISTICS FOR OPERATION
More informationMX60LF8G18AC. 3V, 8G-bit NAND Flash Memory MX60LF8G18AC. P/N: PM2192 REV. 1.1, January 24,
3V, 8G-bit NAND Flash Memory MX60LF8G18AC 1 Contents 1. FEATURES...6 2. GENERAL DESCRIPTIONS...7 Figure 1. Logic Diagram...7 2-1. ORDERING INFORMATION...8 3. PIN CONFIGURATIONS...10 3-1. PIN DESCRIPTIONS...12
More informationPre-enabling designs with ONFI (Open NAND Flash Interface) Shahed Ameer Applications Engineer Flash Memory Group, Intel
Pre-enabling designs with ONFI (Open NAND Flash Interface) Shahed Ameer Applications Engineer Flash Memory Group, Intel Agenda Reasons for ONFI Current situation Why ONFI is needed What is ONFI How to
More informationW29N01HV W29N01HV 1G-BIT 3.3V NAND FLASH MEMORY. Release Date: Oct 15, Revision A
W29N01HV 1G-BIT 3.3V NAND FLASH MEMORY 1 Revision A Table of Contents 1. GENERAL DESCRIPTION... 6 2. FEATURES... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS... 7 3.1 Pin assignment 48-pin TSOP1(x8)... 7
More information1Gbit NAND FLASH FMND1GXXX3D. 3V/1.8V, x8/x16 1G-BIT NAND FLASH. Rev.09 (Sep ) 1
FMND1GXXX3D 3V/1.8V, x8/x16 1G-BIT NAND FLASH Rev.09 (Sep. 8. 2016) 1 Documents title 1Gbit (128Mx8Bit, 64Mx16Bit) NAND FLASH Revision History Revision No. History Draft date Remark 0.0 Initial Draft Apr.05.2013
More informationW29N01HZ/W W29N01HZ/W 1G-BIT 1.8V NAND FLASH MEMORY. Release Date: January, 11 th, Revision E
W29N01HZ/W 1G-BIT 1.8V NAND FLASH MEMORY 1 Revision E Table of Contents 1. GENERAL DESCRIPTION... 6 2. FEATURES... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS... 7 3.1 Pin assignment 48 pin TSOP1 (x8)...
More informationW29N01HZ/W W29N01HZ/W 1G-BIT 1.8V NAND FLASH MEMORY. Release Date: September, 20 th, Revision D
W29N01HZ/W 1G-BIT 1.8V NAND FLASH MEMORY 1 Revision D Table of Contents 1. GENERAL DESCRIPTION... 6 2. FEATURES... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS... 7 3.1 Pin assignment 48 pin TSOP1 (x8)...
More informationA33 Nand Flash Controller Specification
A33 Nand Flash Controller Specification Revision 1.0 Feb.28,2014 Copyright 2014 by Allwinner. All rights reserved Page 1 of 29 DECLARATION THIS DOCUMENTATION IS THE ORIGINAL WORK AND COPYRIGHTED PROPERTY
More informationComputer Memory. Textbook: Chapter 1
Computer Memory Textbook: Chapter 1 ARM Cortex-M4 User Guide (Section 2.2 Memory Model) STM32F4xx Technical Reference Manual: Chapter 2 Memory and Bus Architecture Chapter 3 Flash Memory Chapter 36 Flexible
More informationQorIQ Optimization Suite (QOS) Packet Analysis Tool
QorIQ Optimization Suite (QOS) Packet Analysis Tool FTF-SDS-F0004 Petru Lauric Dragos Badea A P R. 2 0 1 4 TM External Use Introduction Performance analysis and debug tool designed specifically for the
More informationMX30LF2G28AB MX30LF4G28AB. 3V, 2G/4G-bit NAND Flash Memory. MX30LFxG28AB. P/N: PM2029 REV. 1.3, February 08,
3V, 2G/4G-bit NAND Flash Memory MX30LFxG28AB 1 Contents 1. FEATURES...6 2. GENERAL DESCRIPTIONS...7 Figure 1. Logic Diagram...7 2-1. ORDERING INFORMATION...8 3. PIN CONFIGURATIONS...10 3-1. PIN DESCRIPTIONS...12
More informationCopyright 2016 Xilinx
Zynq Architecture Zynq Vivado 2015.4 Version This material exempt per Department of Commerce license exception TSU Objectives After completing this module, you will be able to: Identify the basic building
More informationTHIS SPEC IS OBSOLETE
THIS SPEC IS OBSOLETE Spec No: 001-47864 Spec Title: INTERFACING TI OMAPV1030 PROCESSOR TO ASTORIA'S PSEUDO-NAND PROCESSOR-PORT - AN47864 Sunset Owner: Dhanraj Rajput (DBIR) Replaced by: None Interfacing
More informationMX30LF1208AA 512M-bit NAND Flash Memory
MX30LF1208AA 512M-bit NAND Flash Memory 1 Contents 1. FEATURES...4 2. GENERAL DESCRIPTIONS...4 Figure 1. MX30LF1208AA Logic Diagram... 4 2-1. ORDERING INFORMATION...5 3. PIN CONFIGURATIONS...6 3-1. PIN
More informationAddress connections Data connections Selection connections
Interface (cont..) We have four common types of memory: Read only memory ( ROM ) Flash memory ( EEPROM ) Static Random access memory ( SARAM ) Dynamic Random access memory ( DRAM ). Pin connections common
More informationSolve Performance Optimization Problems with the QorIQ Optimization Suite Scenarios Tool
Solve Performance Optimization Problems with the QorIQ Optimization Suite Scenarios Tool FTF-SDS-F0201 Jessica Deery Software Developer, Digital Networking Sidharth Kodikal Software Developer, Digital
More informationMemory Systems for Embedded Applications. Chapter 4 (Sections )
Memory Systems for Embedded Applications Chapter 4 (Sections 4.1-4.4) 1 Platform components CPUs. Interconnect buses. Memory. Input/output devices. Implementations: System-on-Chip (SoC) vs. Multi-Chip
More informationECE 485/585 Microprocessor System Design
Microprocessor System Design Lecture 4: Memory Hierarchy Memory Taxonomy SRAM Basics Memory Organization DRAM Basics Zeshan Chishti Electrical and Computer Engineering Dept Maseeh College of Engineering
More informationZynq-7000 All Programmable SoC Product Overview
Zynq-7000 All Programmable SoC Product Overview The SW, HW and IO Programmable Platform August 2012 Copyright 2012 2009 Xilinx Introducing the Zynq -7000 All Programmable SoC Breakthrough Processing Platform
More information4Gb NAND FLASH HY27UF(08/16)4G2B
HY27UF(08/6)4G2B Series 4Gbit (52Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/6)4G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility
More information8 Gb NAND Flash H27U8G8T2B
8 Gb NAND Flash H27U8G8T2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses
More information1Gb NAND FLASH HY27US081G1M HY27US161G1M
1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described.
More informationMX30LF2G18AC MX30LF4G18AC. 3V, 2G/4G-bit NAND Flash Memory. MX30LFxG18AC P/N: PM2129 REV. 1.1, NOV. 18,
3V, 2G/4G-bit NAND Flash Memory MX30LFxG18AC 1 Contents 1. FEATURES...6 2. GENERAL DESCRIPTIONS...7 Figure 1. Logic Diagram...7 2-1. ORDERING INFORMATION...8 3. PIN CONFIGURATIONS...9 3-1. PIN DESCRIPTIONS...11
More informationEarly Software Development Through Emulation for a Complex SoC
Early Software Development Through Emulation for a Complex SoC FTF-NET-F0204 Raghav U. Nayak Senior Validation Engineer A P R. 2 0 1 4 TM External Use Session Objectives After completing this session you
More informationUMSDXXXGBP Micro-SD 3.0 Memory Card Specification
Micro-SD 3.0 Memory Card Specification Version 1.1 Revision History Revision History Draft Date Remark 1.0 First Release 2011-03-21 Andre 1.1 Mechanical Drawing updated 2011-07-01 Eric A. General Description
More information512Mb SLC NAND Flash Specification. (Preliminary)
52Mb SLC NAND Flash Specification A5U2A3ATS (Preliminary) Zentel Electronics Corp. /49 GENERAL DESCRIPTION The device is a 64Mx8bit with spare 2Mx8bit capacity. The device is offered in 3.3V Vcc Power
More informationIS34ML02G081 IS35ML02G081. 2Gb SLC-1b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE
IS34ML2G8 IS35ML2G8 2Gb SLC-b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 2Gb (x8) 3.3V NAND FLASH MEMORY with b ECC IS34/35ML2G8 FEATURES Flexible & Efficient Memory Architecture - Organization:
More informationRev 1.0 Aug DNSF1G08U0F-T. 1Gb NAND Flash Single-Level-Cell (1bit/Cell) datasheet - 1 -
Aug. 2018 DNSF1G08U0F-T 1Gb NAND Flash Single-Level-Cell (1bit/Cell) - 1 - Revision History Revision No. History Draft Date Remark 1.0 1. Initial issue Aug., 2018 Preliminary - 2 - Table Of Contents 1.0
More informationFive Key Steps to High-Speed NAND Flash Performance and Reliability
Five Key Steps to High-Speed Flash Performance and Reliability Presenter Bob Pierce Flash Memory Summit 2010 Santa Clara, CA 1 NVM Performance Trend ONFi 2 PCM Toggle ONFi 2 DDR SLC Toggle Performance
More informationComputer Organization. 8th Edition. Chapter 5 Internal Memory
William Stallings Computer Organization and Architecture 8th Edition Chapter 5 Internal Memory Semiconductor Memory Types Memory Type Category Erasure Write Mechanism Volatility Random-access memory (RAM)
More informationIS34ML02G084 IS35ML02G084. 2Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE
IS34ML2G84 IS35ML2G84 2Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 2Gb(x8) 3.3V NAND FLASH MEMORY with 4b ECC IS34/35ML2G84 FEATURES Flexible & Efficient Memory Architecture - Organization:
More informationUMBC. Select. Read. Write. Output/Input-output connection. 1 (Feb. 25, 2002) Four commonly used memories: Address connection ... Dynamic RAM (DRAM)
Memory Types Two basic types: ROM: Read-only memory RAM: Read-Write memory Four commonly used memories: ROM Flash (EEPROM) Static RAM (SRAM) Dynamic RAM (DRAM) Generic pin configuration: Address connection
More informationDesign with the QorIQ T2081 and T1040 Processor Families
Design with the QorIQ T2081 and T1040 Processor Families FTF-NET-F0140 Chun Chang Application Engineer A P R. 2 0 1 4 TM External Use Session Introduction This session is relevant for customers designing
More informationIS34MW02G084/164 IS35MW02G084/164. 2Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE
IS34MW2G84/64 IS35MW2G84/64 2Gb SLC-4b ECC.8V X8/X6 NAND FLASH MEMORY STANDARD NAND INTERFACE 2Gb(x8/x6).8V NAND FLASH MEMORY with 4b ECC IS34/35MW2G84/64 FEATURES Flexible & Efficient Memory Architecture
More informationMIL-STD-1553 (T4240/T4160/T4080) 12/8/4 2 PMC/XMC 2.0 WWDT, ETR, RTC, 4 GB DDR3
Rugged 6U VME Single-Slot SBC Freescale QorIQ Multicore SOC 1/8/4 e6500 Dual Thread Cores (T440/T4160/T4080) Altivec Unit Secure Boot and Trust Architecture.0 4 GB DDR3 with ECC 56 MB NOR Flash Memory
More informationFlash Controller Solutions in Programmable Technology
Flash Controller Solutions in Programmable Technology David McIntyre Senior Business Unit Manager Computer and Storage Business Unit Altera Corp. dmcintyr@altera.com Flash Memory Summit 2012 Santa Clara,
More informationHigh-Speed NAND Flash
High-Speed NAND Flash Design Considerations to Maximize Performance Presented by: Robert Pierce Sr. Director, NAND Flash Denali Software, Inc. History of NAND Bandwidth Trend MB/s 20 60 80 100 200 The
More informationDocument Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Document Title Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft. Aug. 2004 Preliminary 0.1 1) Correct Fig.10 Sequential out cycle after read 2) Add the text to Fig.1,
More informationELEC 5200/6200 Computer Architecture and Design Spring 2017 Lecture 7: Memory Organization Part II
ELEC 5200/6200 Computer Architecture and Design Spring 2017 Lecture 7: Organization Part II Ujjwal Guin, Assistant Professor Department of Electrical and Computer Engineering Auburn University, Auburn,
More informationDocument Title 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
Document Title Memory HY27US(08/16)281A Series Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Sep. 2004 Preliminary 0.1 1) Correct Summary description & page.7 - The Cache feature
More informationZynq Architecture, PS (ARM) and PL
, PS (ARM) and PL Joint ICTP-IAEA School on Hybrid Reconfigurable Devices for Scientific Instrumentation Trieste, 1-5 June 2015 Fernando Rincón Fernando.rincon@uclm.es 1 Contents Zynq All Programmable
More informationChapter 6 Storage and Other I/O Topics
Department of Electr rical Eng ineering, Chapter 6 Storage and Other I/O Topics 王振傑 (Chen-Chieh Wang) ccwang@mail.ee.ncku.edu.tw ncku edu Feng-Chia Unive ersity Outline 6.1 Introduction 6.2 Dependability,
More information1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC NAND Flash Memory for Embedded
Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC NAND Flash Memory for Embedded Distinctive Characteristics Density Gb / 2 Gb / 4 Gb Architecture Input / Output Bus Width: 8 bits / 6 bits Page size: 8: Gb: (2048 +
More informationK9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTI. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LINSE, EXPRESS OR
More informationOptimize your system designs using Flash memory
Optimize your system designs using Flash memory Howard Cheng Sr. Segment Applications Manager Embedded Solutions Group, Micron 2012 Micron Technology, Inc. All rights reserved. Products are warranted only
More informationW25N01GV 3V 1G-BIT SERIAL SPINAND FLASH MEMORY WITH DUAL/QUAD SPI. Publication Release Date: April 12, 2013 Preliminary - Revision A
3V 1G-BIT SERIAL SPINAND FLASH MEMORY WITH DUAL/QUAD SPI Preliminary - Revision A Table of Contents 1. GENERAL DESCRIPTIONS... 6 2. FEATURES... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS... 7 3.1 Pad Configuration
More information16Gb E-die NAND Flash SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Rev. 0.9.,Mar. 200 K9GAG08U0E K9LBG08U0E K9HCG08UE Final 6Gb E-die NAND Flash Multi-Level-Cell (2bit/cell) SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT
More information3.3V 4Gb SLC NAND Flash Memory Specification and Technical Notes
3.3V 4Gb SLC NAND Specification and Technical Notes PSU4GA3AT-bECC PSU4GA3AT (X8) Memory Cell: (22 x 8bit)/page x 64 page/block x 496 block/device Or 22 X 256K X 8bit Register: 22 X 8 Page Size: 22 Byte
More informationChapter 8 Memory Basics
Logic and Computer Design Fundamentals Chapter 8 Memory Basics Charles Kime & Thomas Kaminski 2008 Pearson Education, Inc. (Hyperlinks are active in View Show mode) Overview Memory definitions Random Access
More informationECE 485/585 Microprocessor System Design
Microprocessor System Design Lecture 5: Zeshan Chishti DRAM Basics DRAM Evolution SDRAM-based Memory Systems Electrical and Computer Engineering Dept. Maseeh College of Engineering and Computer Science
More informationDocument Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory
Document Title Memory HY27UG(08/16)2G2M Series Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004 Preliminary 1) Add Errata tcls tclh twp tals talh tds twc tr Specification
More informationThe D igital Digital Logic Level Chapter 3 1
The Digital Logic Level Chapter 3 1 Gates and Boolean Algebra (1) (a) A transistor inverter. (b) A NAND gate. (c) A NOR gate. 2 Gates and Boolean Algebra (2) The symbols and functional behavior for the
More informationSpansion SLC NAND Flash Memory for Embedded
Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 1-bit ECC, x8 and x16 I/O, 1.8V V CC S34MS01G1, S34MS02G1, S34MS04G1 Data Sheet (Preliminary) Spansion SLC NAND Flash Memory for
More information1 Gbit, 2 Gbit, 4 Gbit SLC NAND Flash for Embedded
Distinctive Characteristics Density 1 Gbit / 2 Gbit / 4 Gbit Architecture Input / Output Bus Width: 8-bits / 16-bits Page Size: x8 1 Gbit: (2048 + 64) bytes; 64-byte spare area 2 Gbit / 4 Gbit: (2048 +
More information3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ Revision L Table of Contents 1. GENERAL DESCRIPTIONS... 6 2. FEATURES... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS...
More informationMark Redekopp, All rights reserved. EE 352 Unit 10. Memory System Overview SRAM vs. DRAM DMA & Endian-ness
EE 352 Unit 10 Memory System Overview SRAM vs. DRAM DMA & Endian-ness The Memory Wall Problem: The Memory Wall Processor speeds have been increasing much faster than memory access speeds (Memory technology
More informationESDRAM/SDRAM Controller For 80 MHz Intel i960hd Processor
ESDRAM/SDRAM Controller For 80 MHz Intel i960hd Processor AN-113 Enhanced Memory Systems Enhanced SDRAM (ESDRAM) is the memory of choice for high performance i960hx systems. The Enhanced Memory Systems
More informationEECS150 - Digital Design Lecture 17 Memory 2
EECS150 - Digital Design Lecture 17 Memory 2 October 22, 2002 John Wawrzynek Fall 2002 EECS150 Lec17-mem2 Page 1 SDRAM Recap General Characteristics Optimized for high density and therefore low cost/bit
More informationCS 320 February 2, 2018 Ch 5 Memory
CS 320 February 2, 2018 Ch 5 Memory Main memory often referred to as core by the older generation because core memory was a mainstay of computers until the advent of cheap semi-conductor memory in the
More informationIS34MW01G084/164 IS35MW01G084/164. 1Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE
IS34MWG84/64 IS35MWG84/64 Gb SLC-4b ECC.8V X8/X6 NAND FLASH MEMORY STANDARD NAND INTERFACE Gb (x8/x6).8v NAND FLASH MEMORY with 4b ECC IS34/35MWG84/64 FEATURES Flexible & Efficient Memory Architecture
More informationIntroduction read-only memory random access memory
Memory Interface Introduction Simple or complex, every microprocessorbased system has a memory system. Almost all systems contain two main types of memory: read-only memory (ROM) and random access memory
More informationK9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
K9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTI. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LINSE, EXPRESS OR
More informationThe Memory Component
The Computer Memory Chapter 6 forms the first of a two chapter sequence on computer memory. Topics for this chapter include. 1. A functional description of primary computer memory, sometimes called by
More informationChapter 5 Internal Memory
Chapter 5 Internal Memory Memory Type Category Erasure Write Mechanism Volatility Random-access memory (RAM) Read-write memory Electrically, byte-level Electrically Volatile Read-only memory (ROM) Read-only
More informationHigh-Performance, Highly Secure Networking for Industrial and IoT Applications
High-Performance, Highly Secure Networking for Industrial and IoT Applications Table of Contents 2 Introduction 2 Communication Accelerators 3 Enterprise Network Lineage Features 5 Example applications
More informationCENG3420 Lecture 08: Memory Organization
CENG3420 Lecture 08: Memory Organization Bei Yu byu@cse.cuhk.edu.hk (Latest update: February 22, 2018) Spring 2018 1 / 48 Overview Introduction Random Access Memory (RAM) Interleaving Secondary Memory
More informationExcalibur Solutions Using the Expansion Bus Interface. Introduction. EBI Characteristics
Excalibur Solutions Using the Expansion Bus Interface October 2002, ver. 1.0 Application Note 143 Introduction In the Excalibur family of devices, an ARM922T processor, memory and peripherals are embedded
More informationK9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS
More informationComputer Memory Basic Concepts. Lecture for CPSC 5155 Edward Bosworth, Ph.D. Computer Science Department Columbus State University
Computer Memory Basic Concepts Lecture for CPSC 5155 Edward Bosworth, Ph.D. Computer Science Department Columbus State University The Memory Component The memory stores the instructions and data for an
More informationKeyStone C665x Multicore SoC
KeyStone Multicore SoC Architecture KeyStone C6655/57: Device Features C66x C6655: One C66x DSP Core at 1.0 or 1.25 GHz C6657: Two C66x DSP Cores at 0.85, 1.0, or 1.25 GHz Fixed and Floating Point Operations
More informationQorIQ P4080 Processor Pre-Boot Loader Image Tool
June 23, 2010 QorIQ P4080 Processor Pre-Boot Loader Image Tool FTF-NET-F0402 Kelley Oswalt Applications Engineer Objective Introduce the PBL Image Tool and describe it s features and use in assisting the
More informationProduct Technical Brief S3C2413 Rev 2.2, Apr. 2006
Product Technical Brief Rev 2.2, Apr. 2006 Overview SAMSUNG's is a Derivative product of S3C2410A. is designed to provide hand-held devices and general applications with cost-effective, low-power, and
More informationMicro-SD 3.0 Memory Card. Specification Non-UHS
NO.1, Qun Yi Rd, Jhunan, Miaoli, Taiwan 350, R.O.C. Tel: 886-37-586-896 Fax: 886-37-587-868 Website: www.phison.com Email: Support@phison.com Phison Electronics Corporation Micro-SD 3.0 Memory Card Specification
More informationNAND Flash Module 69F64G16 69F128G16 69F256G16 FEATURES: Preliminary
Preliminary NAND Flash Module 69F64G16 69F128G16 69F256G16 FEATURES: NAND Flash Interface Single Level Cell (SLC) Technology ONFI 2.2 Compliant Operating Voltage VCC 3.0-3.6V VCCQ 1.7-1.95V or 3.0-3.6V
More informationMemory Device Evolution
Memory Device Evolution Cassino May 2008 Maurizio Di Zenzo Applications Lab Mgr Agenda Random access memories A quick comparison of technologies Details of external memory technologies Solutions for low
More informationLearn How VortiQa Application Identification Software (AIS) Can Detect Encrypted Web Application Traffic Using Heuristic Logic and SSL Proxy
Learn How VortiQa Application Identification Software (AIS) Can Detect Encrypted Web Application Traffic Using Heuristic Logic and SSL Proxy FTF-NET-F0017 Nageswara Rao A. V. K. A P R. 2 0 1 4 TM External
More informationProduct Technical Brief S3C2416 May 2008
Product Technical Brief S3C2416 May 2008 Overview SAMSUNG's S3C2416 is a 32/16-bit RISC cost-effective, low power, high performance micro-processor solution for general applications including the GPS Navigation
More information8051 INTERFACING TO EXTERNAL MEMORY
8051 INTERFACING TO EXTERNAL MEMORY Memory Capacity The number of bits that a semiconductor memory chip can store Called chip capacity It can be in units of Kbits (kilobits), Mbits (megabits), and so on
More information3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH
Featuring 3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS Revision F Table of Contents 1. GENERAL DESCRIPTIONS... 6 2. FEATURES...
More informationMemories: Memory Technology
Memories: Memory Technology Z. Jerry Shi Assistant Professor of Computer Science and Engineering University of Connecticut * Slides adapted from Blumrich&Gschwind/ELE475 03, Peh/ELE475 * Memory Hierarchy
More informationCOMPUTER ARCHITECTURES
COMPUTER ARCHITECTURES Random Access Memory Technologies Gábor Horváth BUTE Department of Networked Systems and Services ghorvath@hit.bme.hu Budapest, 2019. 02. 24. Department of Networked Systems and
More informationTopic 21: Memory Technology
Topic 21: Memory Technology COS / ELE 375 Computer Architecture and Organization Princeton University Fall 2015 Prof. David August 1 Old Stuff Revisited Mercury Delay Line Memory Maurice Wilkes, in 1947,
More informationTopic 21: Memory Technology
Topic 21: Memory Technology COS / ELE 375 Computer Architecture and Organization Princeton University Fall 2015 Prof. David August 1 Old Stuff Revisited Mercury Delay Line Memory Maurice Wilkes, in 1947,
More informationTECHNICAL PAPER Interfacing the Byte- Wide SmartVoltage FlashFile Memory Family to the Intel486 Microprocessor Family
E TECHNICAL PAPER Interfacing the Byte- Wide SmartVoltage FlashFile Memory Family to the Intel486 Microprocessor Family October 1996 Order Number: 297805-001 Information in this document is provided in
More informationMPC8260 PowerQUICC II TM to CAM Interfacing
MPC8260 PowerQUICC II TM to CAM Interfacing Eric Jackson Technical Marketing, NCSD Networking & Computing Systems Group Motorola, Semiconductor Product Sector Abstract The purpose of this document is to
More informationWilliam Stallings Computer Organization and Architecture 8th Edition. Chapter 5 Internal Memory
William Stallings Computer Organization and Architecture 8th Edition Chapter 5 Internal Memory Semiconductor Memory The basic element of a semiconductor memory is the memory cell. Although a variety of
More informationMobile DiskOnChip G3
512Mbit/1Gbit Flash Disk with MLC NAND and M-Systems x2 Technology Preliminary Data Sheet, June 2003 Highlights Mobile DiskOnChip G3 is one of the industry s most efficient storage solutions, using Toshiba
More informationMainstream Computer System Components
Mainstream Computer System Components Double Date Rate (DDR) SDRAM One channel = 8 bytes = 64 bits wide Current DDR3 SDRAM Example: PC3-12800 (DDR3-1600) 200 MHz (internal base chip clock) 8-way interleaved
More informationMainstream Computer System Components CPU Core 2 GHz GHz 4-way Superscaler (RISC or RISC-core (x86): Dynamic scheduling, Hardware speculation
Mainstream Computer System Components CPU Core 2 GHz - 3.0 GHz 4-way Superscaler (RISC or RISC-core (x86): Dynamic scheduling, Hardware speculation One core or multi-core (2-4) per chip Multiple FP, integer
More informationCENG4480 Lecture 09: Memory 1
CENG4480 Lecture 09: Memory 1 Bei Yu byu@cse.cuhk.edu.hk (Latest update: November 8, 2017) Fall 2017 1 / 37 Overview Introduction Memory Principle Random Access Memory (RAM) Non-Volatile Memory Conclusion
More informationW29N08GV W29N08GV 8G-BIT 3.3V NAND FLASH MEMORY 2 CHIP STACKED 8G-BIT. Release Date: May 17 th, Revision C
2 CHIP STACKED 8G-BIT W29N08GV 8G-BIT 3.3V NAND FLASH MEMORY 1 Revision C Table of Contents 1. GENERAL DESCRIPTION... 7 2. FEATURES... 7 3. PACKAGE TYPES AND PIN CONFIGURATIONS... 8 3.1 Pin Assignment
More informationW29N02GW/Z W29N02GW/Z 2G-BIT 1.8V NAND FLASH MEMORY. Release Date: December 4 th, Revision E
W29N02GW/Z 2G-BIT 1.8V NAND FLASH MEMORY 1 Revision E Table of Contents 1. GENERAL DESCRIPTION... 7 2. FEATURES... 7 3. PACKAGE TYPES AND PIN CONFIGURATIONS... 8 3.1 Pin assignment 48-pin TSOP... 8 3.2
More informationDesign Choices for FPGA-based SoCs When Adding a SATA Storage }
U4 U7 U7 Q D U5 Q D Design Choices for FPGA-based SoCs When Adding a SATA Storage } Lorenz Kolb & Endric Schubert, Missing Link Electronics Rudolf Usselmann, ASICS World Services Motivation for SATA Storage
More informationMCF5307 DRAM CONTROLLER. MCF5307 DRAM CTRL 1-1 Motorola ColdFire
MCF5307 DRAM CONTROLLER MCF5307 DRAM CTRL 1-1 MCF5307 DRAM CONTROLLER MCF5307 MCF5307 DRAM Controller I Addr Gen Supports 2 banks of DRAM Supports External Masters Programmable Wait States & Refresh Timer
More informationMemory System Overview. DMA & Endian-ness. Technology. Architectural. Problem: The Memory Wall
The Memory Wall EE 357 Unit 13 Problem: The Memory Wall Processor speeds have been increasing much faster than memory access speeds (Memory technology targets density rather than speed) Large memories
More information