CDMSP M Surface Mount TVS Diode Array

Transcription

1 *RoHS COMPLIANT Features RoHS compliant* Protects four I/O lines Ultra-low capacitance ~.55 pf ESD protection > kv Surge protection Applications High Definition Multimedia Interface (HDMI) Digital Visual Interface (DVI) Ethernet // Mb/s SATA interface Portable electronics CDMSP-5M Surface Mount TVS Diode Array General Information The CDMSP-5M device provides ESD, EFT and Surge protection for high speed data ports meeting IEC -- (ESD), IEC -- (EFT) and IEC --5 (Surge) requirements. The Transient Voltage Suppressor array, protecting up to data lines, offers a Working Peak Reverse Voltage of 5 V and Minimum Breakdown Voltage of V. The MSOP-L packaged device will mount directly onto the industry standard MSOP-L footprint. Bourns Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration minimizes roll away. Line Line VDD Line Line GND Absolute Maximum Ratings (@ T A = 5 C Unless Otherwise Noted) Parameter Symbol Value Unit Operating Supply Voltage V DC V DC Voltage at any I/O Pin V D (Gnd -.5) to (Vdd +.5) V ESD Performance per IEC -- (I/O Pins) Air Discharge V ESD I/O kv Contact Discharge V ESD I/O kv ESD Performance per IEC -- (VDD, GND Pins) Air Discharge V ESD PW kv Contact Discharge V ESD PW kv Storage Temperature T STG -55 C to +5 C C Operating Temperature T OPR -55 C to +5 C C How To Order Common Code CD = Chip Diode Package MSP = MSOP- Package Working Peak Reverse Voltage 5 = 5 V RWM (Volts) Number of Lines M = Data Lines CD MSP - 5 M Typical Part Marking CDMSP-5M...B5 Schematic 5 8 *RoHS Directive /5/EC Jan 7 including Annex

2 CDMSP-5M Surface Mount TVS Diode Array Electrical Characteristics T A = 5 C Unless Otherwise Noted) Parameter Symbol Minimum Nominal Maximum Unit Reverse Standoff Voltage V RWM 5 V Leakage V RWM I D 5 µa Channel Leakage V RWM I CD µa Reverse Breakdown V RWM V BR V Forward I F = 5 ma V F.8 V ESD Clamping IEC -- + kv, Contact Mode ESD Clamping IEC -- + kv, Contact Mode V C.5 V V C.5 V ESD Dynamic Turn-On Resistance - I/O R dyn_io. Ohms ESD Dynamic Turn-On Resistance - V DD Channel Input Capacitance V PIN =5 V, V IN =.5 V, f = MHz R dyn_vdd. Ohms C IN pf Channel Input Capacitance V PIN =N/C, V IN =.5 V, f = MHz C IN-.7.8 pf Channel to Channel Input Capacitance V PIN =5 V, V IN =.5 V, f = MHz C CROSS-.8. pf (Between channel pins) Channel to Channel Input Capacitance VPIN=N/C, V IN =.5 V, f = MHz C CROSS-.. pf (Between channel pins) Variation of Channel Input Capacitance V PIN =5 V, V IN =.5 V, f = MHz C IN-.. pf (Channel x Pin to GND, Channel y Pin to GND) Variation of Channel Input Capacitance V PIN =N/C, V IN =.5 V, f = MHz C IN-.5.8 pf (Channel x Pin to GND, Channel y Pin to GND) Notes:. Test from V dd Pin to Gnd Pin 8. Test from Pin,, or 5 to Gnd Pin 8. Test from Gnd Pin 8 to V dd Pin

3 CDMSP-5M Surface Mount TVS Diode Array Product Dimensions Recommended Footprint This is a molded JEDEC MSOP-L package with lead free % Matte Sn on the lead frame. It weighs approximately 7 mg and has a flammability rating of UL V (.85 -.). -. (. -.). (.).8 (.8) 5.8 (.8).5 (.). (.) INDEX AREA.5 (.) TYP (. -.) (. -.) SEATING PLANE.5 -. (. -.) This LAND LAYOUT is for reference purposes only. Please consult your manufacturing partners to ensure your company s PCB design guidelines are met. Typical Application This ESD protection device is ideal in high speed data port protection such as HDMI where capacitance per line is critical parameter. See example connection below. 5 ~ 5 PLCS.. -. (.5 -.). -. (. -.). -. (. -.) DIMENSIONS = MILLIMETERS (IHES) ~ 8 ALL LEADS TMDS_D+ TMDS_D- TMDS_D+ TMDS_D- TMDS_D+ TMDS_D- 7 8 GND + V 7 8 GND + V 5 5 TMDS_D+ TMDS_D- C= nf (optional) TMDS_D+ TMDS_D- TMDS_D+ TMDS_D- C= nf (optional) TMDS_CK+ TMDS_CK+ TMDS_CK- TMDS_CK-

4 CDMSP-5M Surface Mount TVS Diode Array Characteristic Curves Insertion Loss S (I/O-to-GND) Insertion Loss S (I/O-to-GND) Insertion Loss (db) θ+8 θ+ VDD = 5 V GHz -.55 db.5 GHz - db Insertion Loss (db) θ+8 θ+ VDD = floated. GHz - db Analog Cross Talk Analog Cross Talk Analog Cross Talk (db) VDD = 5 V Analog Cross Talk (db) VDD = floated - θ+8 θ+ - θ+8 θ+ Transmission Line Pulsing (TLP) Measurement Transmission Line Pulsing (TLP) Current (A) 8 8 I/O to GND Transmission Line Pulsing (TLP) Transmission Line Pulsing (TLP) Measurement Transmission Line Pulsing (TLP) Current (A) 8 8 VDD to GND Transmission Line Pulsing (TLP) Customers should verify actual device performance in their specific applications

5 CDMSP-5M Surface Mount TVS Diode Array Characteristic Curves Typical Variation of C IN vs. V IN...8 VDD = 5 V, GND = V, f = MHz, T = 5 C Typical Variation of C IN vs. V IN...8 VDD = floated, GND = V, f = MHz, T = 5 C Typical Variation of C IO-to-IO vs. V IN VDD = 5 V, GND = V, f = MHz, T = 5 C Typical Variation of C IO-to-IO vs. V IN VDD = floated, GND = V, f = MHz, T = 5 C

6 CDMSP-5M Surface Mount TVS Diode Array Packaging Information The product will be dispensed in tape and reel format (see diagram below). P P d Index Hole E T B F W D D D P A C Trailer Device Leader End Start W pitches (min.) pitches (min.) Devices are packed in accordance with EIA standard RS-8-A. Direction of Feed Item Symbol MSOP-L Carrier Width A 5.5 ±. (. ±.) Carrier Length B.5 ±. (.8 ±.) Carrier Depth C.5 ±. (.5 ±.) Sprocket Hole d.55 ±.5 (. ±.) Reel Outside Diameter D 78 (7.8) 5. Reel Inner Diameter D (.) MIN.. ±. Feed Hole Diameter D (.5 ±.8) Sprocket Hole Position E.75 ±. (. ±.) Punch Hole Position F.5 ±.5 Punch Hole Pitch P (.8 ±.) 8. ±. (. ±.). ±. Sprocket Hole Pitch P (.57 ±.). ±.5 Embossment Center P (.7 ±.) Overall Tape Thickness Tape Width T W. ±. (.8 ±.). ±. (.7 ±.8) Reel Width W. (.57) Quantity per Reel -- DIMENSIONS: MM (IHES) Asia-Pacific: Tel: Fax: Europe: Tel: Fax: The Americas: Tel: Fax: /8