NEC XXXXXXXXXX. RF & Wireless. Semiconductors
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1 NEC XXXXXXXXXX 2014 RF & Wireless Semiconductors
2 About CEL California Eastern Laboratories (CEL) is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly NEC Electronics Corporation. These products include RF components, Optocouplers, Solid State Relays, and Lasers and Detectors for Fiber Optics. PRODUCTS by APPLICATION Front End Components for UHF to 2.5GHz Applications 2 LNAs for L to C-Band Applications & 5.8GHz WLAN/ Wi-Fi/ WiMAX Devices 4 PRODUCT SPECIFICATIONS RF Switch ICs SPDTs (Single Pole Double Throw) 5 DPDTs (Double Pole Double Throw) 5 GaAs FETs Low Noise GaAs FETs, 1 to 20GHz 6 Silicon MOSFET Devices CEL serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment (ATE) markets. With over 50 years experience in high frequency design, customer support and fulfillment, CEL is ide ally positioned to provide its customers with solutions tailored to meet their specific needs. CEL maintains extensive inventories and provides engineering and applications assistance at its technical centers in Santa Clara, CA. and Wauconda, IL. The company supports customers through sales offices, sales representatives and distributors in numerous locations. RF Power LD-MOSFETs 6 MOSFET for Microphone Impedance Conversion 6 Silicon Bipolar Transistors Small Signal Silicon Devices 7 Medium Power Transistors 7 Twin Transistors 7 Silicon RFICs 3V Silicon MMIC Amplifiers 8 5V Silicon MMIC Amplifiers 8 Upconverters 9 Downconverters 9 CEL /JEITA Cross Reference List 9 Dimensions 10 S-Parameters, SPICE Models, App Notes, Data Sheets, and more are available at cel.com/rf CEL Headquarters 4590 Patrick Henry Drive Santa Clara, CA Tel: (408) Fax: (408)
3 Front End Components for UHF to 2.5 GHz Applications Wi-Fi Bluetooth ZigBee Automated Meter Reading Mesh & Home Area Networks ISM Band applications LNAs High/Medium Power RFIC Switches IN Transceiver OUT Power Amplifiers Low Power RFIC Switches RFIC Switches (additional P/Ns available, see page 5) 450MHz 915MHz 2.4GHz UPG2409TB / T6X SPDT, High power, SOT-363 and TSON/QFN package options UPG2176T5N SPDT, High power, internally terminated (absorptive) UPG2415TK / T6X SPDT, High power, miniature and TSON/QFN package options UPG2408TB / TK SPDT, Medium power, SOT-363 and more compact package options UPG2406TK SPDT, Medium power, compact package (opposite logic vs. UPG2408TX) UPG2214TB / TK SPDT, Low power, High Isolation, SOT-363 and compact package options UPD5713TK SPDT, Single Control, ideal for low frequency applications 4 4 UPG2164T5N DPDT, Diversity/Transfer Switch (two selectable RF paths on) Power Amplifier Transistors (additional P/Ns available, see page 6) 450MHz 915MHz 2.4GHz NE A +39.5dBm, 9W, 7.5V LD MOSFET 4 4 NE dBm, 2W, 7.5V LDMOS FET 4 4 NE664M04 +26dBm, 3.6V Silicon Discrete NE678M04 +18dBm, 3.0 V Silicon Discrete NE677M04 +15dBm, 3.0 V Silicon Discrete Low Noise Amplifier Transistors 450MHz 915MHz 2.4GHz NE662M04 Silicon Discrete, NF = 1.1, Ga = 16.0, OIP3 = 2GHz NE3509M04 GaAs FET, NF = 0.40, Ga = 17.5, OIP3 = 2 GHz 4 4 NE3508M04 GaAs FET, NF = 0.45, Ga = 14.0, OIP3 = 2 GHz
4 LNAs for L to C-Band Applications First, second and third stage devices for applications from 1 to 8GHz Tuner/ Receiver FIRST STAGE Filter SECOND STAGE THIRD STAGE LNAs by Application Application FIRST STAGE SECOND STAGE THIRD STAGE Satellite Radio and DAB GHz NE3508M04 NE3509M04 NE3510M04 NE3508M04 NE662M04 NE3508M04 LNA Performance (see Data Tables for additional specifications) Description NF Gain P1dB NE3508M04 GaAs HJ-FET 2.0GHz 2.0GHz M04 NE3509M04 GaAs HJ-FET 2.0GHz 2.0GHz M04 NE3510M04 GaAs HJ-FET 2.0GHz 2.0GHz M04 NE662M04 Silicon Transistor 2.0GHz 2.0GHz M04 3
5 2.4 & 5.8 GHz WLAN / Wi-Fi / WiMAX Devices Single and multi-throw switches, transistor, RFICs, discrete Silicon and GaAs low noise amplifiers designed specifically for Dual Band WLAN and WiMAX. LNAs 2.4 GHz 5-6 GHz Chipset Transceiver 2.4 GHz SPDT or DPDT RFIC Switches 5-6 GHz GaAs RFIC Switches to 2.5GHz Single & Multi Throw UPG2408TB SPDT, 3V, 0.50dB Insertion Loss, High ESD immunity UPG2406TK SPDT, 1.8 or 2.7V control voltage, 0.45dB Insertion 2GHz, High ESD immunity GaAs RFIC Switches Broadband to 6GHz UPG2422TK SPDT for Dual Band WLAN, very cost-effective, V control voltage range UPG2163T5N SPDT, Insertion Loss: 2.4GHz, 6GHz, Isolation = 6GHz UPG2176T5N SPDT 2.4 6GHz, Insertion Loss: 2.4GHz, 5.5GHz, internal terminations UPG2415TK / T6X SPDT for Dual Band WLAN, high power, low insertion loss for Access Point applications UPG2409T6X SPDT for Dual Band WLAN, high power, low insertion loss for Access Point applications UPG2409TB SPDT GHz, Insertion Loss: 2.5GHz, 3.8GHz UPG2164T5N DPDT, Insertion Loss: 2.4GHz, 5.5GHz, 17dB 6GHz UPG2162T5N DPDT, Insertion Loss: 2.4GHz, 5.5 GHz, 27dB 6GHz LNAs NE3509M04 GaAs HJ FET, super low 0.40dB noise figure, 17dB 2.5GHz, OIP3 = +22dBm NE3508M04 GaAs HJ FET, super low 0.45dB noise figure, 14dB 2.5GHz, OIP3 = +31dBm 4
6 RF Switch ICs SPDTs (Single Pole Double Throw) (GHz, max) ICAL ELECTRICAL CHARACTERISTICS (TA = 25 C) Control Voltages Insertion Loss Isolation Input 0.1 db compression point Input 1.0 db compression point UPD5713TK , 2.8/0 2GHz 2GHz TK UPG2009TB /0 2GHz 2GHz +34 TB Description Single Control (1.8-Vdd), small size package, CMOS High power handling, low insertion loss, high isolation UPG2030TK /0 2GHz 2GHz TK Medium power, small size package UPG2155TB /0 2GHz 2GHz +37 TB UPG2163T5N /0 2.5GHz 6GHz 2.5GHz 6GHz 2.5GHz 6GHz UPG2176T5N /0 3.5GHz 3.5GHz +37 T5N UPG2214TB , 3.0/0 2GHz 2GHz +23 UPG2214TK , 3.0/0 2GHz 2GHz +23 UPG2406TK , 2.7/0 2GHz 2GHz (1.8V), 26(3.0V) +20 (1.8V), 26(3.0V) +25 (1.8V), 30.5 (3.0V) T5N TB TK TK High power handling, low harmonics, lowest cost high power switch Highest isolation, great 2.4 and 6GHz performance Absorptive, high power and high linearity to 6GHz Low insertion loss, high isolation, medium power, 1.8V-5.3V. Small size package, low inseriton loss, high isolation, medium power, 1.8V-5.3V. Small size package, cost effective medium power, 1.8V-5.3V UPG2408TB /0 2GHz 2GHz +29 TB Lowest cost medium power for UHF-3GHz UPG2408TK /0 2GHz 2GHz +29 TK UPG2409TB /0 UPG2409T6X /0 UPG2415TK /0 UPG2415T6X /0 UPG2422TK , 3.0/0 2.5GHz 3.8GHz 0.45@ 2.5GHz 0.65@6GHz 2.5GHz 6GHz 2.5GHz 6GHz 2.5GHz, 6GHz 2.5 GHz 3.8GHz 2.5 GHz GHz 2.5 GHz GHz 2.5 GHz GHz 2.5GHz 6GHz TB T6X TK T6X 2-6GHz 6GHz TK Small size package, cost effective medium power Lowest Cost high power SPDT, for Access Points to 3.8GHz High power, for Access Points to 6GHz, 1.5mm QFN package High power handling for Access Points to 6GHz, small size package High power handling for Access Points to 6GHz, 1.5mm QFN package Lowest cost 6GHz SPDT, medium power, small size package, low inseriton loss, high isolation, 1.8V-5.3V DPDTs (Double Pole Double Throw) ICAL ELECTRICAL CHARACTERISTICS (TA = 25 C) (GHz, max) Control Voltages UPG2164T5N /0 UPG2162T5N /0 Insertion Loss 2.4GHz 5.5GHz 2.4GHz 5.5GHz Isolation 2.4GHz 5.5GHz 2.4GHz 5.5 GHz Input db compression point Input db compression point UPD5738T6N /0 1GHz 1GHz T6N T5N T5N Description Lowest cost, lowest insertion loss DPDT. 6GHz operation. Best isolation of all DPDTs, up to 6GHz operation Only one control pin, low frequency operation, CMOS, 1.5V-3.6V 5
7 GaAs FETs Low Noise GaAs FETs, 1 to 20GHz Typical TA = 25 C Gate Length (μm) Gate Width (μm) Recommended Test NF/GA Bias VDS IDS NFOPT GA VDS Power Bias IDS P1dB Chip / Chip / Description NE3503M to M04 Plastic SMD NE3508M to M04 Plastic SMD NE3509M to M04 Plastic SMD NE3510M to M04 Plastic SMD NE3511S to S02 Micro-X Plastic NE3512S to S02 Micro-X Plastic NE3513M to M04 Plastic SMD NE3514S to S02 Micro-X Plastic NE3515S to S02 Micro-X Plastic NE3516S to S02 Plastic SMD NE3520S to S03 Micro-X Plastic NE3521M04 10 to M04 Plastic SMD Silicon MOSFET Devices RF Power LD-MOSFETs Typical TC = 25 C NE POUT Linear Gain Freq PIN Test Conditions VDS IDSQ Description 34 Pkg: Compact SMT NE A A Pkg: Compact SMT NE A A Pkg: Compact SMT NE A A Pkg: Compact SMT NE A A Pkg: Compact SMT MOSFET for Microphone Impedance Conversion Supply Voltage Circuit Current (μa) Input Capacitance (pf) Voltage Gain Output Noise Voltage (dbv) Total Harmonic Distortion (%) HBM ESD (KV) M53 (mm) NE5820M >8 1.0 x 1.2 x
8 Silicon Bipolar Transistors Small Signal Silicon Devices TEST f VCE NF/GA ICQ NF GA VCE MAG/MSG IC ft hfe IC MAX Description NE Pkg: 3 pin Super Mini Mold, SOT-323 style NE662M M04 Pkg: 4 pin low profile SOT-343 style NE Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE Pkg: 4 pin Super Mini Mold NE Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE Pkg: 3 pin Super Mini Mold, SOT-323 style NE Pkg: 3 pin Mini Mold, SOT-23 style NE Pkg: 4 pin Mini Mold NE Pkg: 4 pin Super Mini Mold NE Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE Pkg: 3 pin Super Mini Mold, SOT-323 style NE Pkg: 3 pin Mini Mold, SOT-23 style NE Pkg: 4 pin Mini Mold, SOT-143 style NE Pkg: 4 pin Super Mini Mold NE Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE Pkg: 4 pin Super Mini Mold NE Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style NE Pkg: 3 pin Super Mini Mold, SOT-323 style NE Pkg: 3 pin Mini Mold, SOT-23 style NE Pkg: 4 pin Mini Mold, SOT-143 style NE Pkg: 3 pin Mini Mold, SOT-23 style (PNP) NE Pkg: 3 pin Mini Mold, SOT-23 style (PNP) Medium Power Transistors TEST f VCE P1dB MAG / MSG ft ICQ VCE IC hfe IC MAX Description NE Pkg: 4 pin SOT-89 style NE461M M02 Pkg: 4 pin high gain SOT-89 style NE663M M04 Pkg: 4 pin low profile SOT-343 style NE664M M04 Pkg: 4 pin low profile SOT-343 style NE677M M04 Pkg: 4 pin low profile SOT-343 style NE678M M04 Pkg: 4 pin low profile SOT-343 style NE Pkg: 4 pin SOT-89 style NE856M M02 Pkg: 4 pin high gain SOT-89 style Twin Transistors TEST NF/GA f VCE NF/GA IC NF GA MAG VCE S21E IC ft hfe IC MAX Pkg. Style UPA800T S06 SOT-363 NE680 UPA801T S06 SOT-363 NE856 UPA802T S06 SOT-363 NE681 UPA806T S06 SOT-363 NE685 UPA810T S06 SOT-363 NE856 UPA811T S06 SOT-363 NE680 Die 7
9 Silicon RFICs 3V Silicon MMIC Amplifiers 3dB down (MHz) VCC ICC ELECTRICAL CHARACTERISTICS 1 (TA = 25 C) NF Gain RLIN RLOUT P1dB ISOL MIN MAX MIN MAX Style UPC2745TB S06 / TB SOT-363 UPC2746TB S06 / TB SOT-363 UPC2748TB S06 / TB SOT-363 UPC2749TB S06 / TB SOT-363 UPC2762TB S06 / TB SOT-363 UPC8178TK TK 6 pin Recessed Lead UPC8179TK 4 Note TK 6 pin Recessed Lead Notes: 1. ZL = 50 Ω for all Electrical Characteristics MHz with output port matching 2. f = 500 MHz test condition 3. f = 900 MHz test condition 4. f = 1900 MHz test condition 5V Silicon MMIC Amplifiers 3dB down (MHz) VCC ICC ELECTRICAL CHARACTERISTICS 1 (TA = 25 C) NF Gain RLIN RLOUT P1dB ISOL MIN MAX MIN MAX Style UPC2708TB S06 / TB SOT-363 UPC2709TB S06 / TB SOT-363 UPC2710TB S06 / TB SOT-363 UPC3223TB S06 / TB SOT-363 UPC3224TB S06 / TB SOT-363 Notes: 1. ZL = 50 Ω for all Electrical Characteristics 2. f = 500 MHz test condition 3. f = 1000 MHz test condition 4. f = 1900 MHz test condition 8
10 Silicon RFICs continued Upconverters IF db Down (MHz) RF Output (MHz) VCC ELECTRICAL CHARACTERISTICS (TA = 25 C) ICC Conversion Gain PSAT 1 Noise Figure OIP3 Style UPC8106TB S06 /TB SOT-363 UPC8172TB S06 /TB SOT-363 Notes: 1. PIN = 0 dbm 2. RF = 900 MHz, LO = 660 MHz, PLO = -5 dbm 3. RF = 1900 MHz, LO = 1660 MHz, PLOIN = -5 dbm Downconverters ELECTRICAL CHARACTERISTICS (TA = 25 C) RF db Down (MHz) IF db Down (MHz) VCC ICC Conversion Gain PSAT Noise Figure Test Condition (Note) Style UPC2756TB S06 / TB SOT-363 UPC2757TB S06 / TB SOT-363 UPC2758TB S06 / TB SOT-363 UPC8112TB S06 / TB SOT-363 Note: 1. AGC Amp and Mixer Block only CEL /JEITA 1 Cross Reference List CEL JEITA 1 CEL JEITA 1 NE SC4536 NE SC5007 NE461M02 2SC5337 NE SC4227 NE SC4703 NE SC3583 NE SC5606 NE SC4094 NE662M04 2SC5508 NE SC5015 NE663M04 2SC5509 NE SC5010 NE664M04 2SC5754 NE SC5011 NE677M04 2SC5751 NE SC5006 NE678M04 2SC5753 NE SC4226 NE SC5013 NE SC3356 NE SC5008 NE SC3357 NE SC4228 NE856M02 2SC5336 NE SC3585 NE SA1977 NE SC5012 NE SA1978 Notes: 1. JEITA = Japan Electronics and Information Technology Industries Association 9
11 Dimensions Units in mm These dimensions are for the package only. For detailed dimensions including leads, please refer to the datasheet. 18 (1.25 x 2.0 x 0.9) 19 (0.8 x 1.6 x 0.75) 30 (1.25 x 2.0 x 0.9) 33 (1.5 x 2.9 x 1.4) 34 (2.5 x 4.5 x 1.5) 39 (1.5 x 2.9 x 1.1) 79A (4.2 x 4.4 x 0.9) M02 (2.45 x 4.5 x 1.5) Bottom View M04 (1.25 x 2.0 x 0.6) M05 (1.25 x 2.0 x 0.6) M53 (1.0 x 1.2 x 0.33) S02 / S03 (2.6 x 2.6 x 1.5) T / TB / S06 (1.25 x 2.0 x 0.9) TK (1.1 x 1.5 x 0.55) T5N / T6N (1.5 x 1.5 x 0.37) T6X / TSON 6 (1.5 x 1.5 x 0.37) Bottom View Bottom View Bottom View 10
12 U.S. Sales Representatives CEL Headquarters CT / MA / ME / NH / RI / VT Anchor Engineering Tel: (508) AZ / NM / NV Bager Electronics Tel: (480) Southern CA - LA / OC / SD Infinity Sales Tel: (714) Kansas Stan Clothier Co. Tel: (913) MN / ND / SD Stan Clothier Co. Tel: (952) Missouri Stan Clothier Co. Tel: (636) MD / VA / WV Strategic Sales Inc. Tel: (410) Colorado / Utah Thorson Rocky Mountain Tel: (303) Indiana / Kentucky TMC Tel: (317) Patrick Henry Drive Santa Clara, CA Tel: (408) Fax: (408) Upstate New York Ontec SSI Tel: (585) Wisconsin Stan Clothier Co. Tel: (608) Michigan TMC Tel: (248) CEL Regional Sales Offices Illinois Stan Clothier Co. Tel: (847) Northern NJ / NYC / LI Strategic Sales Inc. Tel: (973) Ohio / West PA TMC Tel: (513) CEL West Tel: (408) Fax: (408) CEL Southeast Tel: (408) Fax: (410) lowa Stan Clothier Co. Tel: (319) Southern NJ / East PA / DE Strategic Sales Inc. Tel: (856) TX / OK / AR / LA TTS Tel: (972) CEL Southwest Tel: (760) Fax: (408) CEL Northeast Tel: (408) Fax: (410) CEL Central Tel: (408) Fax: (913) CEL International Tel: (408) Fax: (908) Asia India International Marketing Services Tel: +(91) Hong Kong CEL Administrative Office Tel: +(852) Canada Ontario, Quebec, Maritime Provinces Astec Components Ltd. Tel: (905) Mexico Zapopan, Jalisco Everest Sales & Solutions Tel: +(53) Naucalpan, EDO de Mexico Everest Sales & Solutions Tel: +(52) Monterrey, Nuevo Leon Everest Sales & Solutions Tel: +52-1(811) Ciudad Juarez, Chihuahua Everest Sales & Solutions Tel: +52-1(656) Tijuana, Baja California Everest Sales & Solutions Tel: +52(664) South America Brazil VLA Solutions Tel: +(55) Africa/Middle East South Africa RF Design Tel: 27 (0) Israel Semix Marketing & Engineering Ltd. Tel: +(972) CEL South Central Tel: (408) Fax: (913) Distributors Arrow Electronics arrow.com Avnet, Inc. avnetexpress.com Avnet - Israel avnet-israel.com CEL Office for Distribution ners Tel: (408) Fax: (408) Digi-Key Corporation digikey.com Future Electronics futureelectronics.com Mouser Electronics mouser.com 2014 California Eastern Laboratories /4M Learn More
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