Wide Band Drive Amp BT09E. Application Note (Tune for OIP3)

Transcription

1 1. RF MMIC Innovator [Classification] Application Note [Date] [Revision No.] Rev.A [Measuring Instruments] - NA_Agilent 8753ES - SA_Agilent E4440A - SG_Agilent 4438C - SG_IFR 3416 Wide Band Drive Amp BT09E Application Note (Tune for OIP3) 1

2 Contents RF MMIC INNOVATOR MHZ APPLICATION MHZ TEST RESULT(GAIN, OIP3, P1, IRL, ORL, NF) MHZ S-PARAMETER MHZ TEST RESULT(WCDMA 1FA ACLR) MHZ TEST RESULT(LTE 20MHZ ACLR) MHZ APPLICATION MHZ TEST RESULT(GAIN, OIP3, P1, IRL, ORL, NF) MHZ S-PARAMETER MHZ TEST RESULT(WCDMA 1FA ACLR) MHZ TEST RESULT(LTE 20MHZ ACLR) MHZ APPLICATION MHZ TEST RESULT(GAIN, OIP3, P1, IRL, ORL, NF) MHZ S-PARAMETER MHZ TEST RESULT(WCDMA 1FA ACLR) MHZ TEST RESULT(LTE 20MHZ ACLR) MHZ APPLICATION MHZ TEST RESULT(GAIN, OIP3, P1, IRL, ORL, NF) MHZ S-PARAMETER MHZ TEST RESULT(WCDMA 1FA ACLR) MHZ TEST RESULT(LTE 20MHZ ACLR)

3 1. BT09E_1900MHz Application Note Ref. Des. Description/ Part Number Values Vendor C CAP - C CAP 1uF Samsung C CAP 62pF Samsung C CAP 0Ω Samsung C CAP 100pF Samsung C CAP 10pF Samsung BT09E B C CAP 2.7pF Samsung C CAP 2.7pF Samsung L IND 22nH Taiyo Yuden L IND 1.8nH Taiyo Yuden U1 SOT89PKG BT09E BEREX ` TITLE BT09E Evaluation Board Note: _PCB: 31mil thick FR4 1. The distance between the edge of the series cap(c6) and the Input Pin of BT09E is 2.4mm 2. The distance between the edge of the shunt cap(c7) and the Input Pin of BT09E is 1.2mm 3. The distance between the edge of the series ind(l2) and the Output Pin of BT09E is 3.5mm 4. The distance between the edge of the shunt cap(c8) and the Output Pin of BT09E is 5.6mm Date Drawing Number FILE NAME (1900 MHz) Rev. Drawn By SHEET 3

4 1.1 BT09E_1900MHz Test Result SN Freq [MHz] Vcc [V] Icc [ma] Gain OIP3 [dbm] (1) P1dB [dbm] IRL ORL NF (1) OIP3 was 1MHz offset 4

5 1.2 BT09E_1900MHz S-parameter 5

6 1.3 BT09E_ 1900MHz WCDMA 1FA ACLR [Test condition] power 14.4dBm 6

7 1.4 BT09E_ 1900MHz LTE 20MHz ACLR [Test condition] power 14.4dBm 7

8 2. BT09E_2140MHz Application Note Ref. Des. Description/ Part Number Values Vendor C CAP - C CAP 1uF Samsung C CAP 62pF Samsung C CAP 0Ω Samsung C CAP 22pF Samsung C CAP 1pF Samsung BT09E B C CAP 1.8pF Samsung C CAP 1.2pF Samsung L IND 10nH Taiyo Yuden L IND 1.8nH Taiyo Yuden U1 SOT89 PKG BT09E BEREX TITLE BT09E Evaluation Board Note: _PCB: 31mil thick FR4 1. The distance between the edge of the series cap(c6) and the Input Pin of BT09E is 2.4mm 2. The distance between the edge of the shunt cap(c7) and the Input Pin of BT09E is 0.5mm 3. The distance between the edge of the series ind(l2) and the Output Pin of BT09E is 3.5mm 4. The distance between the edge of the shunt cap(c8) and the Output Pin of BT09E is 5.6mm Date Drawing Number FILE NAME (2140 MHz) Rev. Drawn By SHEET 8

9 2.1 BT09E_2140MHz Test Result SN Freq [MHz] Vcc [V] Icc [ma] Gain OIP3 [dbm] (1) P1dB [dbm] IRL ORL NF (1) OIP3 was 1MHz offset 9

10 2.2 BT09E_2140MHz S-parameter 10

11 2.3 BT09E_ 2140MHz WCDMA 1FA ACLR [Test condition] power 14.1dBm 11

12 2.4 BT09E_ 2140MHz LTE 20MHz ACLR [Test condition] power 14dBm 12

13 3. BT09E_2650MHz Application Note Ref. Des. Description/ Part Number Values Vendor C CAP - C CAP 1uF Samsung C CAP 22pF Samsung C CAP 0 Ω Samsung C CAP 22pF Samsung BT09E B C CAP 0.75pF Samsung C CAP 1pF Samsung C CAP 1.2pF Samsung L IND 6.8nH Taiyo Yuden U1 SOT89 PKG BT09E BEREX TITLE BT09E Evaluation Board Drawing Number (2650 MHz) Rev. Note: _PCB: 31mil thick FR4 1. The distance between the edge of the series cap(c6) and the Input Pin of BT09E is 2.4mm 2. The distance between the edge of the shunt cap(c7) and the Input Pin of BT09E is 0.5mm 3. The distance between the edge of the shunt cap(c7) and the Output Pin of BT09E is 5.6mm Date FILE NAME Drawn By SHEET 13

14 3.1 BT09E_2650MHz Test Result SN Freq [MHz] Vcc [V] Icc [ma] Gain OIP3 [dbm] (1) P1dB [dbm] IRL ORL NF (1) OIP3 was 1MHz offset 14

15 3.2 BT09E_2650MHz S-parameter 15

16 3.3 BT09E_ 2650MHz WCDMA 1FA ACLR [Test condition] power 13.4dBm 16

17 3.4 BT09E_ 2650MHz LTE 20MHz ACLR [Test condition] power 13.1dBm 17

18 4. BT09E_3500MHz Application Note Ref. Des. Description/ Part Number Values Vendor C CAP - C CAP 1uF Samsung C CAP 22pF Samsung C CAP 0 Ω Samsung C CAP 22pF Samsung C CAP 0.75pF Samsung BT09E B C CAP 1pF Samsung C CAP 1pF Samsung L IND 6.8nH Taiyo Yuden U1 SOT89 PKG BT09E BEREX TITLE BT09E Evaluation Board Drawing Number (3500 MHz) Rev. Note: _PCB: 31mil thick FR4 1. The distance between the edge of the series cap(c6) and the Input Pin of BT09E is 1.2mm 2. The distance between the edge of the shunt cap(c7) and the Input Pin of BT09E is 3.6mm 3. The distance between the edge of the shunt cap(c7) and the Output Pin of BT09E is 1.7mm Date FILE NAME Drawn By SHEET 18

19 4.1 BT09E_3500MHz Test Result SN Freq [MHz] Vcc [V] Icc [ma] Gain OIP3 [dbm] (1) P1dB [dbm] IRL ORL NF (1) OIP3 was 1MHz offset 19

20 4.2 BT09E_3500MHz S-parameter 20

21 4.3 BT09E_ 3500MHz WCDMA 1FA ACLR [Test condition] power 13.2dBm 21

22 4.4 BT09E_ 3500MHz LTE 20MHz ACLR [Test condition] power 13.3dBm 22