IS31LT3916 Non-Isolation T8 Lighting DEMO Board Guide

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1 Description The IS31LT3916 is a primary side, peak current mode, isolated or non-isolated type HBLED driver. The device works at a constant frequency in discontinuous conduction mode to provide a constant power to the output. It eliminates the need for an opto-coupler, TL431, or any other type of secondary side feedback. It operates from a wide input voltage range of 90VAC to 260VAC. The IS31LT3916 integrates over current protection, over voltage protection, as well as includes a thermal shutdown to halt the switching action in the case of abnormally high operating temperatures. Features Power factor correction to > % typical current accuracy High efficiency No loop compensation required Wide input voltage range: 90V to 260VAC Isolation and Non-isolation application Internal over-temperature protection Over voltage protection Primary side over current protection LED bulb lamp LED tube lamp General LED lamp Applications Quick Start Recommended Equipment 90~260VAC/50~60Hz power supply LED array(24 LEDs in series) Recommended Input and Output Ratings Input: 90~260VAC Output: 24LEDs in series(76v/240ma) 265VAC power supply 80V Vout (Total Vf) Absolute Maximum Ratings Caution: Do not exceed the conditions listed above, otherwise the board will be damaged or the output will be limited. Procedure The IS31LT3916 DEMO Board is fully assembled and tested. Follow the steps listed below to verify board operation. Caution: Do not turn on the power supply until all connections are completed. 1) Connect the positive terminal of the LEDs to the LED+ pin of the DEMO and the negative terminal of the LEDs to the LEDpin of the DEMO. 2) Connect the input pins (L and N) of the DEMO via the main power switch to AC power supply. 3) Turn on the power supply. Order information Part Number IS31LT3916-SLS2-EBT8 Package Type MSOP-8 Figure 1 Picture of DEMO Board (NOTE: Physical dimensions are (L x W x H): 220mm x 17mm x 12mm) Integrated Silicon Solution, Inc. 1

2 Bill of Materials No. Name Description Ref Des. Qty. Cost(RMB) 1 Fuse 1A,250V,3*10 F MOV 7D471K MOV X Cap 0.1uF,275VAC CX1,CX AL Cap 100uF±10%,100V,10mm*23mm C3,C SMD Cap NC C CBB Cap 100nF±10%,400V C SMD Cap 1nF±10%,16V,0805 C SMD Cap 1uF±10%,50V,0805 C SMD Cap 10uF±10%,50V,1206 C SMD Cap 1uF±10%,50V,1206 C Rectifying Bridge DB107,1A,1000V,DB-1 BD FR Diode ES2J,2A,600V,SMA D SMD Diode NC D SMD Diode 1N4148,200mA,75V,LL34 D SMD Diode M7,1A,1000V,SMA D SMD Resistor NC R SMD Resistor 4.7KΩ±5%,0805 R SMD Resistor 1MΩ±1%,1206 R5,R SMD Resistor 180KΩ±5%,1206 R6,R SMD Resistor 910KΩ±1%,1206 R7,R SMD Resistor 68KΩ±5%,1206 R SMD Resistor 0Ω,0805 R SMD Resistor 1Ω±1%,1206 R SMD Resistor NC R SMD Resistor 1.6MΩ±1%,0805 R SMD Resistor 68KΩ±1%,0805 R SMD Resistor 240KΩ±1%,0805 R SMD Resistor 13KΩ±1%,0805 R SMD Resistor 20KΩ±1%,0805 R SMD Resistor 0.91Ω±1%,1206 R20,R SMD Resistor 130KΩ±1%,0805 R SMD Resistor 10KΩ±1%,0805 R Inductor 3mH±10%,8*10mm,Isat 200mA L Common Mode EE12,L2-1=L2-2=30mH±10%, Chock 0.25mm,100Ts L Transformer ER2010,Tp:Ta=78:16,Lp=0.43mH±5% TR NMOS 4N60,4A/600V,TO-220 Q PCB 230mm x 17mm IC IS31LT3916,MSOP-8 U1 1 - Total Cost(Exclude IC) Integrated Silicon Solution, Inc. 2

3 F1 L2 L3 R2 BD1 L1 LED VAC MOV CX1 CX2 R4 C6 R5 R7 R6 TR C3 C4 C5 R8 C7 R9 R18 R11 R16 R19 C8 R15 R17 R10 U VCC GATE VSINE CS FSET NC FB GND R14 D3 Q1 R12 R13 R20 R21 D1 LED+ C9 D4 R22 D5 C10 R23 Figure 2. Schematic of DEMO Board Figure 3 PCB Layout- Top Layer Figure 4 PCB Component Placement Guide - Top Layer Figure 5 PCB Layout- Bottom Layer ELECTRICAL SPECIFCATIONS: 1. Primary inductance(lp)=430uh@60khz. MATERIALS: 1. Core: ER2010 (Ferrite Material TDK PC40 or equivalent) 2. Bobbin: ER2010, Primary: 5 pins, Secondary: 5 pins 3. Magnet Wires: Type 2-UEW 4. Layer Insulation Tape :3M1298 or equivalent. Transformer Design Figure 6 Transformer Integrated Silicon Solution, Inc. 3

4 NO. winding Start End number of number of number of diameter turns plies plies tape 1 Np T 0.33mm-2UEW *4mm 2 Ns T 0.19mm-2UEW *4mm remarks Input voltage(vac) PF THD(%) Input power(w) Output voltage(v) Output current(ma) Output power(w) Test result Efficiency(%) Output current(ma) Vin(VAC) Figure 7 Line regulation Efficiency(%) Vin(VAC) Figure 8 Efficiency&Vin Integrated Silicon Solution, Inc. 4

5 PF Vin(VAC) THD(%) PF THD Figure 9 PF,THD&Vin Integrated Silicon Solution, Inc. 5

6 EMI test Figure 10 Conduction EMI_L Integrated Silicon Solution, Inc. 6

7 Figure 11 Conduction EMI_N Copyright 2013 integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. 7