4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
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1 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY DESCRIPTIONS The SU514PG is a 4-channel ultra low capacitance rail clamp ESD protection ioes array. Each channel consists of a pair of ESD ioes that steer positive or negative ESD current to either the positive or negative rail. A zener ioe is integrate in to the array between the positive an negative supply rails. In the typical applications, the negative rail pin (assigne as GND) is connecte with system groun. The Positive ESD current is steere to the groun through an ESD ioe an Zener ioe an the positive ESD voltage is clampe to the zener voltage. The SU514PG is iea to protect high spee ata lines. FEATURES * 4 channels of ESD protection; * Provies ESD protection to IEC level 4 - ±15kV air ischarge - ±1kV contact ischarge; * Channel I/O to GND capacitance:.4pf(max) * Channel I/O to I/O capacitance:.25pf(max) * Low clamping voltage; * 5V low operating voltage; * Improve zener structure; * Optimize package for easy high spee ata lines PCB layout; * RoHS compliant. APPLICATIONS * HDMI/DVI ports; * Display Port interface; * 1M / 1M / 1G Ethernet; * USB 2. interface; * VGA interface; * Set-top box; * Flat panel Monitors / TVs; * PC / Note book. ORDERING INFORMATION Part No. Package Marking Material Packing SU514PGTR DFN-1-2.5x1.x Halogen free Tape&Reel PIN CONFIGURATION Page 1 of 5
2 ABSOLUTE MAXIMUM RATINGS Characteristics Symbol Ratings Unit Peak Pulse Power(8/2μs) P PP 15 W Peak Pulse Current(8/2μs) I PP 5 A ESD per IEC (Air) V ESD1 ±15 kv ESD per IEC (Contact) V ESD2 ±1 kv Operating Temperature Range Topr -55 ~ +125 C Storage Temperature Range Tstg -55 ~ +15 C Lea Solering Temperature T L 26(1sec) C ELECTRICAL CHARACTERISTICS (Tamb=25 C) Characteristics Symbol Test Conitions Min. Typ. Max. Unit Reverse Working V RWM V I F V F I F=1mA V Reverse Breakown Reverse Leakage Current Positive Clamping Negative Clamping Junction Capacitance Between Channel Junction Capacitance Between I/O An GND V BR I R V C1 V C2 C J1 C J2 I t =1mA; V V RWM =5V, T=25 C; μa I PP=1A, t P=8/2μs; Positive pulse; V I PP=1A, t P=8/2μS; Negative pulse; V V R=V, f=1mhz; Between I/O pins pf V R=V, f=1mhz; pf Page 2 of 5
3 TYPICAL ELECTRICAL CHARACTERISTICS CURVE Typical curve of C IN following V IN Typical curve of C IO-to-IO following V IN Input Capacitor (pf) f=1mhz T=25 C Input Capacitor (pf) f=1mhz T=25 C Input (V) Input (V) 插入损耗 S21(I/O-to-GND) Analog crosstalk Insert consumption (B) Analog crosstalk (B) GHz: -3B Frequency (Hz) Frequency (Hz) Transmission line pulse (TLP) 18 Transmission line pulse (TLP) current (A) VDD to GND V_Pulse 输电线路脉冲 TLP_I 1ns + TLP_V DUT - I/O to GND Transmission line pulse (TLP) voltage (V) Page 3 of 5
4 PACKAGE OUTLINE DFN-1-2.5X1.X.6-.5 UNIT: mm 2.5±.1.2±.5 N6.5TYP N1 Top view 1.±.1.41~.61 Bottom view N1 ~.5 N5.4±.1.3~.46.6±.5 Sie view.15ref CAUTION ELECTROSTATIC SENSITIVE DEVICE DO NOT OPEN OR HANDLE EXPECT AT A STATIC-FREE WORKSTATION MOS DEVICES OPERATE NOTES: Electrostatic charges may exist in many things. Please take following preventive measures to prevent effectively the MOS electric circuit as a result of the amage which is cause by ischarge: The operator must put on wrist strap which shoul be earthe to against electrostatic. Equipment cases shoul be earthe. All tools use uring assembly, incluing solering tools an soler baths, must be earthe. MOS evices shoul be packe in antistatic/conuctive containers for transportation. Disclaimer: reserves the right to make changes to the information herein for the improvement of the esign an performance without further notice! Customers shoul obtain the latest relevant information before placing orers an shoul verify that such information is complete an current.. All semiconuctor proucts malfunction or fail with some probability uner special conitions. When using proucts in system esign or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety stanars strictly an take essential measures to avoi situations in which a malfunction or failure of such proucts coul cause loss of boy injury or amage to property. will supply the best possible prouct for customers! Page 4 of 5
5 ATTACHMENT Revision History Date REV Description Page Initial release Moify ORDERING INFORMATION Moify the value of V ESD2 Page 5 of 5
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