CitrusCom CS Applications. Features. Mechanical Characteristics. Description. Circuit Diagram. Pin Configuration

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1 Features Transient protection for high-speed data lines IEC (ESD) ±30kV (Air) ±30kV (Contact) IEC (EFT) 40A (5/50 ns) IEC (Surge) 10A (8/20μs) Package optimized for high-speed lines Provides protection for two line pairs Low capacitance: 2.5V (Typical) Low leakage current: V RWM (Typical) Low operating and clamping voltage Each I/O pin can withstand over 1000 ESD strikes for ±8kV contact discharge Description is a low-capacitance Transient Voltage Suppressor (TVS) array designed to provide electrostatic discharge (ESD) protection for high-speed data interfaces. With typical capacitance of 4.5pF only, is designed to protect parasitic-sensitive systems against over-voltage and over-current transient events. It complies with IEC (ESD), Level 4 (±15kV air, ±8kV contact discharge), IEC (electrical fast transient - EFT) (40A, 5/50 ns), IEC (Surge) (10A, 8/20μs), very fast charged device model (CDM) ESD and cable discharge event (CDE), etc. Applications 10/100/1000M Ethernet Ports WAN/LAN Equipment Desktops, Servers and Notebooks Cellular Phones Switching Systems Audio/Video Inputs Mechanical Characteristics DFN-8L package Flammability Rating: UL 94V-0 Marking: Part number, Date Packaging: Tape and Reel Circuit Diagram Pin1, 8 Pin2, 7 Pin3, 6 Pin4, 5 Pin Configuration is in a DFN-8L package. Each device can protect two high-speed line pairs. The flow-thru design minimizes trace inductance and reduces voltage overshoot associated with ESD events. The combined features of low capacitance and high ESD robustness make ideal for high-speed data port and high-frequency line (e.g., Gigabit Ethernet Ports) applications. The low clamping voltage of the guarantees a minimum stress on the protected IC DFN-8L (Top View) Revision C 03/30/

2 Absolute Maximum Rating Symbol Parameter Value Units Peak Pulse Current (8/20μs) 10 A P PK Peak Pulse Power (8/20μs) 100 Watts V ESD ESD per IEC (Air) ±30 kv ESD per IEC (Contact) ±30 T OPT Operating Temperature -45 to +85 C T STG Storage Temperature -55 to +150 C Electrical Characteristics (T = 25C) Symbol V RWM Parameter Nominal Reverse Working Voltage I I R Reverse Leakage V RWM V t1 Trigger Voltage I t1 V h Trigger V t1 Holding Voltage V t1 V h V RWM I t1 R I R It1 V RWM Vh V t1 V Holding V h C ESD C Δ Clamping Maximum Peak Pulse Current Parasitic Capacitance Variation in C ESD with Reverse Bias bias Bi-Directional TVS Symbol Test Condition Minimum Typical Maximum Units V RWM 2.5 V I R V RWM = 2.5V, T = 25C na V t1 I t1 = 1μA V V h = 1mA V C ESD C Δ = 2A, t p = 8/20μs = 10A, t p = 8/20μs V R = 2.5V, f = 1MHz Pin1, 8 to 2, 7 & Pin3, 6 to Pin4, 5 V R = 0V ~ 2.5V, f = 1MHz 5.0 V 8.0 V pf 1.3 pf Revision C 03/30/

3 Normalized Capacitance CitrusCom 8/20μs Pulse Waveform Clamping Voltage vs. Current Percent of Ipp Clamping Voltage(V) Time (us) Peak Pulse Current(A) Insertion Loss S21 Normalized Capacitance vs. Voltage Insertion Loss (db) E E E E E+10 Frequency (Hz) Reverse Voltage (V) ESD Clamping of I/O to GND (+8kontact per IEC ) ESD Clamping of I/O to GND (-8kontact per IEC ) Clamping Voltage (V) Clamping Voltage (V) Time (ns) Time (ns) Revision C 03/30/

4 Application Information Electronic equipment is susceptible to damage caused by a variety of sources, including Electrostatic Discharge (ESD), Electrical Fast Transients (EFT) and Lightning strikes. The was designed to protect the sensitive equipment from damage which may be induced by such transient events. This product can be configured in a connection to meet the requirement of differential line pairs as follows: TPOPA R1 C1 C5 TPONA TPOPB TPONB TPOPC R2 R3 C2 C3 Quad Transformer C6 C7 RJ45 TPONC TPOPD R4 C4 C8 TPOND Schematic Diagram for Gigabit Ethernet ESD/Surge Protection Revision C 03/30/

5 Package Outline DFN-8L Package Flow-Through MSL 1 & Thermally-Enhanced D 1 2 L E PIN1 DOT BY MARKING PIN1 IDENTIFICATION e b A2 A1 A SEATING PLANE Package Dimensions (Controlling dimensions are in millimeters) Symbol Dimensions (mm) Dimensions (Inches) Minimum Typical Maximum Minimum Typical Maximum A A A b D E e BSC 20 BSC L R Revision C 03/30/

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