P850-G Series Dual TBU High-Speed Protectors

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1 *RoHS COMPLIANT eatures Extremely high speed performance Blocks high voltages and currents Two TBU protectors in one small package Simple, superior circuit protection Minimal PCB area RoHS compliant*, UL Recognized Bourns Model P850-G Series TBU HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. or new SLIC applications, we recommend that customers evaluate our TBU-PL Series. P850-G Series ual TBU High-Speed Protectors Transient Blocking Units - TBU evices Bourns Model P850-G TBU products are dual high-speed bidirectional protection components, constructed using MOSET semiconductor technology, designed to protect against faults caused by short circuits, AC power cross, induction and lightning surges. The TBU high speed protector, triggering as a function of the MOSET, blocks surges and provides an effective barrier behind which sensitive electronics are not exposed to large voltages or currents during surge events. The TBU device is provided in a surface mount N package and meets industry standard requirements such as RoHS and Pb ree solder refl ow profi les. Agency Approval UL recognized component ile # E Industry Standards escription Model Telcordia GR-089 Port Type 3, 5 P850-G ITU-T K.20, K.20E, K.2, K.2E, K.45 P850-G Absolute Maximum Ratings (T amb = 25 C) Symbol Parameter Value Unit V imp Maximum protection voltage for impulse faults with rise time µsec 850 V V rms Maximum protection voltage for continuous V rms faults 425 V T op Operating temperature range -40 to +85 C T stg Storage temperature range -65 to +50 C Electrical Characteristics (T amb = 25 C) Symbol Parameter Model Min. Typ. Max. Unit I op I trigger I out Maximum current through the device that will not cause current blocking Typical current for the device to go from normal operating state to protected state Maximum current through the device P850-G20-WH P850-G200-WH P850-G20-WH P850-G200-WH P850-G20-WH P850-G200-WH R device Series resistance of the TBU device Ω R bal Line-to line series resistance difference between two TBU devices 2 Ω t block Maximum time for the device to go from normal operating state to protected state µs I quiescent Current through the triggered TBU device with 50 Vdc circuit voltage 0.7 ma V reset Voltage below which the triggered TBU device will transition to normal operating state 22 V ma ma ma The P-G series TBU devices are bidirectional; specifi cations are valid in both directions. *RoHS irective 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 20/65/EU June 8, 20.

2 Applications Sensor protection Signal line protection P850-G Series ual TBU High-Speed Protectors Typical Performance Characteristics V-I Characteristics Time to Block vs. ault Current +I 0. -V reset Itrigger -I trigger V reset +V Time to Block (sec) ault Current (A) Trigger Current Temperature % of Trigger Current Temperature ( C)

3 P850-G Series ual TBU High-Speed Protectors Operational Characteristics The graphs below demonstrate the operational characteristics of the TBU device. or each graph the fault voltage, protected side voltage, and current is presented. V V2 Tip TEST CONIGURATION IAGRAM Pxxx-G Ring Equipment P850-G Lightning, 850 V P850-G Power ault, 230 Vrms, 25 A ma/div V/div. 200 ma/div. 2 µs/div. Ch V Ch2 V2 Ch3 Current 4 ms/div. Ch V Ch2 V2 Ch3 Current

4 P850-G Series ual TBU High-Speed Protectors Product imensions C PIN B A A H J 4A 3A K E TOP VIEW SIE VIEW BOTTOM VIEW Pads A and are internally connected; the same for pads 3A with 3, 4A with 4, and 6A with 6. This allows for one PCB layout to accommodate the Model P850. Recommended Pad Layout.225 (.048) 0.85 (.033) (.05) 0.30 (.02).25 (.049) 0.75 (.030).5 (.045) TBU devices have matte-tin termination fi nish. Suggested layout should use non-solder mask defi ne (NSM). Recommended stencil thickness is mm ( in.) with stencil opening size mm (.000 in.) less than the device pad size. As when heat sinking any power device, it is recommended that, wherever possible, extra PCB copper area is allowed. or minimum parasitic capacitance, do not allow any signal, ground or power signals beneath any of the pads of the device. J K 6A A G H G L Pad esignation Pad # Apply Pad # Apply A Tip In 4A Ring Out Tip In 4 Ring Out 2 NC 5 NC 3 Tip Out 6 Ring In 3A Tip Out 6A Ring In NC = Solder to PCB; do not make electrical connection, do not connect to ground. M M im. A A B C E G H J K L M P850-G Min. Typ. Max (.03) (.035) (.039) (.000) (.00) (.002) (.32) (.325) (.329) (0.54) (0.57) (0.6) (.045) (.049) (.053) (.04) (.045) (.049) (.029) (.032) (.036) (.043) (.047) (.05) (.05) (.07) (.09) (.00) (.02) (.04) (.028) (.030) (.03) (.028) (.030) (.03) (.05) (.07) (.08) IMENSIONS: Block iagram MM (INCHES) Thermal Resistances Part # Symbol Parameter Value Unit P850-G R th(j-a) Junction to leads (package) 9 C/W Junction to leads (per TBU device) 25 C/W 6&6A &A 4&4A 3&3A Reflow Profile Profile eature Pb-ree Assembly Average Ramp-Up Rate (Tsmax to Tp) 3 C/sec. max. Preheat - Temperature Min. (Tsmin) - Temperature Max. (Tsmax) - Time (tsmin to tsmax) 50 C 200 C sec. Time maintained above: - Temperature (TL) - Time (tl) 27 C sec. Peak/Classifi cation Temperature (Tp) 260 C Time within 5 C of Actual Peak Temp. (tp) sec. Ramp-own Rate 6 C/sec. max. Time 25 C to Peak Temperature 8 min. max.

5 P850-G Series 2 mm ual SM TBU Trimming High-Speed Potentiometer Protectors How to Order orm actor P = Two TBU protectors in one device Impulse Voltage Rating 850 = 850 V irectional Indication for Paired evices G = Bidirectional Iop Indicator 20 = 00 ma 200 = 200 ma P G 20 - WH Typical Part Marking MANUACTURER S TRAEMARK* MARKING NUMBER 85GA = P850-G20-WH 85GB = P850-G200-WH PIN MANUACTURING ATE COE* - ST IGIT INICATES THE YEAR S 6-MONTH PERIO. - 2N IGIT INICATES THE WEEK NUMBER IN THE 6-MONTH PERIO. - 3R & 4TH IGITS INICATE SPECIIC LOT OR THE WEEK. 6-MONTH PERIO COES: A = JAN-JUN 2009 C = JAN-JUN 200 E = JAN-JUN 20 B = JUL-EC 2009 = JUL-EC 200 = JUL-EC 20 EXAMPLE: ARBC - ST IGIT A = JAN-JUN N IGIT R = WEEK 8; WEEK O APRIL 27-3R & 4TH IGITS BC = LOT SPECIIC INORMATION *TRANSITION ROM ULTEC TRAEMARK AN LOT COE TO BOURNS TRAEMARK AN ATE COE IN Packaging Specifications (per EIA468-B) B t TOP COVER TAPE P 0 P 2 E A N W C K 0 B 0 G (MEASURE AT HUB) A 0 P CENTER LINES O CAVITY EMBOSSMENT USER IRECTION O EE QUANTITY: 3000 PIECES PER REEL A B C G N Min. Max. Min. Max. Min. Max. Min. Max. Ref. Ref (2.835) (3.002) (.059) (.098) (.504) (.53) (.795) (.650) (4.06) A 0 B 0 E Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. max (.65) (.73) (.333) (.34) (.059) (.063) (.059) (.065) (.073) (.29) (.299) K0 P P0 P 2 t W Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.. (.043).3 (.05) 7.9 (.3) 8. (.39) 3.9 (.59) 4. (.6).9 (.075) 2. (.083) 0.25 (.00) 0.35 (.04) 5.7 (.68) 6.3 (.642) IMENSIONS: MM (INCHES)

6 P850-G Series ual TBU High-Speed Protectors Reference esigns A cost-effective protection solution combines the Bourns TBU protection device with a pair of MOVs or Bourns GTs and a diode bridge. The diagram below illustrates a common confi guration of these components. The graphs to the right demonstrate the operational characteristics of the circuit. V V2 or new SLIC applications, we recommend that customers evaluate our new TBU-PL series. MOVs or GTs Pxxx-G -V RE Equipment Common Confi guration iagram P850-G Configuration (ITU-T K.20, K.2, K.20E, K.2E, K.45) Product Qty. Part Number Source TBU evice P850-G20-WH Bourns, Inc. MOV 2 MOV-036K Bourns, Inc. iode bridge 2 GS2004S-V MMB2004S Vishay iodes Inc. 00 V/div ma/div ns/div. Ch V Ch2 V2 Ch3 Current P850-G Solution: 4000 V Lightning 0/700 µsec, 00 A Asia-Pacific: Tel: ax: EMEA: Tel: ax: The Americas: Tel: ax: REV. 06/5 TBU is a registered trademark of Bourns, Inc. in the United States and other countries.