Qualification Report. June, 1994, QTP Version 1.0. PAL20 Series MARKETING PART NUMBER DEVICE DESCRIPTION. Industry Standard 20-Pin PLDs

Transcription

1 Qualification Report June, 1994, QT Version 1.0 AL20 Series MARKETING ART NUMBER AL16L8 AL16R8 AL16R6 AL16R4 DEVIE DESRITION Industry Standard 20-in LDs Industry Standard 20-in LDs Industry Standard 20-in LDs Industry Standard 20-in LDs

2 RODUT DESRITION (for qualification) Information provided in this document is intended for generic qualification and technically describes the ypress part supplied: Marketing art #: Device Description: ypress Division: AL16L8 4.5-ns, Industry Standard 20-in LDs ypress Semiconductor orporation Overall Die (or Mask) REV Level (pre-requisite for qualification): Die Size (stepping): 112 mils x 121 mils What ID markings on Die: 6A310A ypress Qualification completion/marketing Availability Dates (urrent REV): Jan, 1994 now TEHNOLOGY/FAB ROESS DESRITION Number of Metal Layers: 2 Metal omposition: Metal 1: 1%SiAl, Ti Metal 2: Ti,TiW,1%SiAl,Ti assivation Type and Materials: Free hosphorus contents in top glass layer(%): Die oating(s), if used: None Generic rocess Technology/Design Rule (µ-drawn): 3KA lasmox / 15,00KA Oxynitride None Gate Oxide Material/Thickness (MOS): SiO2 /195A Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer rocess ID: Single oly, Double Metal /0.8µm ypress Semiconductor, Round Rock, TX Fab 2 / S2

3 AGE 3 ackage Outline, Type, or Name: Mold ompound Name/Manufacturer: Lead Frame material: Lead Finish, composition: LASTI AKAGE/ASSEMBLY DESRITION opper 20-pin,300-mil lastic DI Sumitomo EME-6300H(R) Solder plated, 85%Sn, 15%b Die Attach Area lating: Silver Spot Die Attach ad Dim: 140 mils x 160 mils Die Attach Method: aste Die Attach Material: Silver Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.3 mil Name/Location of Assembly (prime) facility: Assembly Line ID and rocess ID: Omedata, Indonesia ypress Bangkok, Thailand Indns-O / 27 ALHA-X / 27 HERMETI AKAGE/ASSEMBLY DESRITION ackage Outline, Type, or Name: 20-in, 300-mil erdi Mold ompound Name/Manufacturer: N/A Lead Frame material: Alloy 42 Lead Finish, composition: Solder Dipped, 63%Sn, 37%b Die Attach Area lating: None Die Attach ad Dim: 170 mils x 280 mils Die Attach Method: aste Die Attach Material: Silver Glass Wire Bond Method: Ultrasonic Wire Material/Size: Aluminum / 1.25 mil Name/Location of Assembly (prime) facility: ypress Bangkok, Thailand Assembly Line ID and rocess ID: Alpha-X / D2

4 AGE 4 OTHER INFORMATION For approval by similarity, identify other devices using the same basic die with bonding or metal mask options or test selections and explain: AL16L8/AL16R8/AL16R6/AL16R4 If ypress is planning any changes in the near future, identify change (Qtr/Yr) in: Die Design Rev./Shrink: None Die rocess hange: None Fab/Assembly site change: None ross Licensee/Licensor: None Other Devices to be qualified in this technology: Other ackages to be qualified for this device: ESD Voltage Rating (per MIL STD-008, Method 3018): Flammability lassification (UL-94V): Alternate Fab/Assembly Locations: 1/8 or None L, L >2,000V lease attach the following Qualification / Reliability data for the die revision and ackage type, for the fab and assembly sites identified above (mark [X] if included): 1 X HAST (5.5V, 140, 85%RH, 15psig) 7 X Operating Life at (temp): 150 /125 2 X Temperature ycles (-65 to 150 ) 8 X Latchup Testing 3 X Temperature ycles (-40 to 125 ) 9 X Steady State Life (HTSSL, 5.75V, 150 ) 4 X Data Retention Bake, Hermetic (250 ) 10 Temperature Humidity Bias (5.5V, 85, 85%RH) 5 X Data Retention Bake, lastic (165 ) 11 X Other: urrent Density Internal Water Vapor Input apacitance Read & Record 6 X ESD Tests (MIL-STD 883, method 3015) 12

5 AGE 5 roduct Family: Mfg Division: RODUT INFORMATION FOR QUALIFIATION BY SIMILARITY Industry Standard 20-in LDs ypress Semiconductor Supplier's art Number Rated Speed kg Size/ Type Die Revision Die Size mil x mil (stepping) Design Rule (µ) Fabrication rocess ID Line ID assivation Type Mold ompound Assembly Line Location ESD Volt Rating Availability (mm/yy) AL16L8 -** -**J -**D/DMB -**LMB 4.5 ns to 10ns 20.3 DI 20S L 20.3 DI 20S L 6A310A 112 x µ BiMOS 2 LTO + Oxynitride Sumitomo or Hysol Indns-O, Korea-A, Alpha-X >2,000V HBM 1/1994 AL16R8 -** -**J -**D/DMB -**LMB 4.5 ns to 10 ns 20.3 DI 20S L 20.3 DI 20S L 6A313A 112 x µ BiMOS 2 LTO + Oxynitride Sumitomo or Hysol Indns-O, Korea-A, Alpha-X >2,000V HBM 1/1994 AL16R6 -** -**J -**D/DMB -**LMB 4.5 ns to 10 ns 20.3 DI 20S L 20.3 DI 20S L 6A312A 112 x µ BiMOS 2 LTO + Oxynitride Sumitomo or Hysol Indns-O, Korea-A, Alpha-X >2,000V HBM 1/1994 AL16R4 -** -**J -**D/DMB -**LMB 4.5 ns to 10 ns 20.3 DI 20S L 20.3 DI 20S L 6A311A 112 x µ BiMOS 2 LTO + Oxynitride Sumitomo or Hysol Indns-O, Korea-A, Alpha-X >2,000V HBM 1/1994

6 AGE 6 DEVIE RELIABILITY SUMMARY Marketing art: AL16L8 Wafer Fab: Fab 2 - Round Rock, TX kg Description: 20-pin, 300-mil DI 20-pin, 300-mil DI Assembly: ypress Bangkok, Thailand Omedata, Indonesia High Temperature Dynamic Operating Life (HTOL, 5.75V, 150 ) - Early Failure Rate Device Assy Lot# Fab Lot # 48 Hours umulative AL16L / /505 High Temperature Dynamic Operating Life (HTOL, 5.75V, 125 ) - Early Failure Rate Device Assy Lot# Fab Lot # 96 Hours umulative AL16L /503 0/503 High Temperature Dynamic Operating Life (HTOL, 5.75V, 150 ) - Latent Failure Rate Device Assy Lot# Fab Lot # 500 Hours umulative AL16L8-D / /116 High Temperature Dynamic Operating Life (HTOL, 5.75V, 125 ) - Latent Failure Rate Device Assy Lot# Fab Lot # 168 Hours 1000 Hours 2000 Hours umulative AL16L /116 0/116 0/116 0/116 Group, Subgroup 1, Life Test (HTOL, 5.75V, 150 ) Device Assy Lot# Fab Lot # 184 Hours umulative AL16L8-DMB /160 0/ EOS 2 1 EOS

7 AGE 7 DEVIE RELIABILITY SUMMARY Marketing art: AL16L8 Wafer Fab: Fab 2 - Round Rock, TX kg Description: 20-pin, 300-mil DI 20-pin, 300-mil DI Assembly: ypress Bangkok, Thailand Omedata, Indonesia High Temperature Steady State Life Test (HTSSL, 5.75V, 150 ) Device Assy Lot# Fab Lot # 80 Hours 168 Hours umulative AL16L8-DMB /94 0/94 0/94 High Temperature Steady State Life Test (HTSSL, 5.75V, 125 ) Device Assy Lot# Fab Lot # 168 Hours 336 Hours umulative AL16L /80 0/80 0/80 Temperature ycle (ondition, -65 to 150 ) Device Assy Lot# Fab Lot # 100 ycles 1000 ycles umulative AL16L8-D /50 0/50 0/50 Temperature ycle (ondition, -40 to 125 ) Device Assy Lot# Fab Lot # 500 ycles 1000 ycles 1500 ycles umulative AL16L /48 0/48 0/48 0/48 Data Retension Bake (DRET 250 ) Device Lot# 96 Hours 168 Hours umulative AL16L8-D /94 0/94 0/94 Data Retension Bake (DRET 165 ) Device Lot# 168 Hours 552 Hours umulative AL16L /80 0/80 0/80

8 AGE 8 DEVIE RELIABILITY SUMMARY Marketing art: AL16L8 Wafer Fab: Fab 2 - Round Rock, TX kg Description: 20-pin, 300-mil DI 20-pin, 300-mil DI Assembly: ypress Bangkok, Thailand Omedata, Indonesia High Accelerated Saturation Test (HAST, 5.5V, 140, 85%RH, 15psig) Device Lot# 128 Hours umulative AL16L /47 0/103 AL16L /56

9 AGE 9 DEVIE RELIABILITY SUMMARY Marketing art: AL16L8 Wafer Fab: Fab 2 - Round Rock, TX kg Description: 20-pin, 300-mil DI 20-pin, 300-mil DI Assembly: ypress Bangkok, Thailand Omedata, Indonesia AL20 Series AL16L8/16R8/16R6/16R4 Electrostatic Discharge Human Body Model ircuit per Mil Std 883, Method 3015 >+2,000V Unit 1 >-2,000V >+2,000V Unit 2 >-2,000V >+2,000V Unit 3 >-2,000V (Highest passing voltage, +10% Guard-banded) Latchup Testing to ypress Internal Latch-up rocedure urrent Injection = 200mA Trigger Hot Socket = V 0-8V Temp = 150

10 AGE 10 REVIOUS QUALIFIATION Marketing art: AL16L8/16R4/16R6/16R8 rod. Family: BiMOS AL 20 Status: ompleted Results: ass omplete Date: June 1992 Mask Id: 6A310 rocess ID: S2 Technology: BiMOS rocess Loc: Fab1-San Jose, A ypress Test No. Stress/Test Reference Method Actual onditions Status * Qualification Data Reference Test Result Temp/Bias Hrs/yc SS/Fail ass Fail 22 HTOL - EFR/LFR /5.75V 125 /5.75V 48 Hrs. 80 Hrs. 500 Hrs. 12 Hrs. 24 Hrs. 48 Hrs. 96 Hrs. 168 Hrs Hrs Hrs. 0/2706 0/841 0/841 1/ /1746 0/1743 1/ /568 0/567 0/ High Temp. Steady State Life Test /5.75V 125 /5.75V 80 Hrs. 168 Hrs. 168 Hrs. 336 Hrs. 0/76 0/76 0/76 0/76 23 HAST /5.5V 100 Hrs. 0/90 24 Steam Test/Autoclave/T /100%RH 168 Hrs. 0/90 12 Temperature ycles JEDE 22, OND. B OND. -40 to to ys ys. 100 ys ys. 0/45 0/45 0/45 0/45 20 Mechanical Sequence 26 X-Ray 6 ESD-HBM orner ins Internal ins ESD-DM orner ins Internal ins Latch-up 50 Flammability & Oxygen Index 14 Moisture Resistance 9 Internal Water Vapor 2 Solvent Resistance 4 Internal Visual 1 hysical Dimensions 3 rogramming failures, FA# A rogramming failures, FA# A922401