GSE0524A. 4-Line ESD Protection Low Capacitance Bi-direction TVS. Product Description. Applications. Packages & Pin Assignments SOT-23-6L GSE0524A
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1 4-Line ESD Protection Low Capacitance Bi-direction TVS Product Description The is a 4-channel ultra low capacitance rail clamp ESD protection diodes array. Each channel consists of a pair of ESD diodes that steer positive or negative ESD current to either the positive or negative rail. A Zener diode is integrated in to the array between the positive and negative supply rails. In the typical applications, the negative rail pin (assigned as GND) is connected with system ground. The Positive ESD current is steered to the ground through an ESD diode and Zener diode and the positive ESD voltage is clamped to the Zener voltage. The is idea to protect high speed data lines. SOT-23-6L package type is provided for easy PCB layout. Features 4 channels of ESD protection Provides ESD protection to IEC level 4 ±17kV air discharge ±12kV contact discharge Channel I/O to GND capacitance: 0.9pF(Max) Channel I/O to I/O capacitance: 0.45pF(Max) Low clamping voltage 5V low operating voltage Improved Zener structure Optimized package for easy high speed data lines PCB layout ROHS compliant Applications USB 2.0 Power and Data Line Protection Monitors and Flat Panel Displays Digital Visual Interface (DVI) 10/100/1000 Ethernet Notebook Computer ATM Interface IEEE 1394 Firewire Ports MP3 Players Video Graphics Cards Set-top box Packages & Pin Assignments SOT-23-6L Marking Information 1
2 Ordering Information GS P/N Package Code Pb Free Code R F Part Number Package Quantity RF SOT-23-6L 3000 PCS Absolute Maximum Ratings (T A =25ºC Unless otherwise noted) Symbol Parameter Typical Unit P pk Peak Pulse Power ( t p = 8/20 μs ) 150 W I pp Maximum Peak Pulse Current ( t p = 8/20 μs ) 5 A V pp ESD per IEC (Air ) ±17 KV V pp ESD per IEC (Contact ) ±12 KV T J Operating Junction Temperature -55 ~ 125 ºC T STG Storage Temperature Range -55 ~ 150 ºC Electrical Characteristics (T A =25ºC Unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit V RWM Reverse Working 5 V V BR Reverse Breakdown I t = 1mA 6 V I R Reverse Leakage Current V RWM = 5V, T=25ºC 1 μa V C 1 Positive Clamping I pp = 1A, t p = 8/20 μs Positive pulse V V C 2 C j Negative Clamping Junction Capacitance Between Channel I pp = 1A, t p = 8/20 μs Negative pulse V R = 0V, f = 1MHz Between I/O Pin 1.8 V pf C j 2 Junction Capacitance Between I/O to GND V R = 0V, f = 1MHz 0.9 pf 2
3 Typical Characteristics 3
4 Typical Characteristics (continue) 4
5 Package Dimension SOT-23-6L Dimensions Symbol Millimeters Inches Min Max Min Max A A A b c D E E e TYP REF e L REF REF L θ 0º 8º 0º 8º 5
6 NOTICE Information furnished is believed to be accurate and reliable. However Globaltech Semiconductor assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Globaltech Semiconductor. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information without express written approval of Globaltech Semiconductor. CONTACT US GS Headquarter 4F.,No.43-1,Lane11,Sec.6,Minquan E.Rd Neihu District Taipei City 114, Taiwan (R.O.C) Wu-Xi Branch No.21 Changjiang Rd., WND, Wuxi, Jiangsu, China (INFO. &. TECH. Science Park Building A 210 Room) sales_cn@gs-power.com 824 Bolton Drive Milpitas. CA RD Division Version_1.0 Notice
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