Enabled (both during preconditioning and measurement) 4KB for random writes, 2MB for sequential writes
|
|
- Shonda Sherman
- 5 years ago
- Views:
Transcription
1 Technical Note Introduction e.mmc Validation and Use Model Performance Introduction This technical note describes performance measurement of the Micron automotive e.mmc 5.0 device during validation and use model simulation. Use model simulation performance results differ from Micron validation performance results (found in the appropriate Micron e.mmc data sheet) due to different testing conditions. This technical note also shows that use model performance can be improved by altering commands and chunk size distribution. Validation Performance Conditions used to validate Micron automotive e.mmc 5.0 performance are shown in the table below. See the appropriate Micron data sheet for e.mmc device performance specifications (with no system overhead). Table 1: Validation Conditions Feature Condition Notes Bus x8, HS400 (or other frequency conditions) 1 Ambient temperature 25 C Byte [167] of EXT_CSD register 1Fh 2 Cache Starting access address Data chunk sizes Random write performance span Enabled (both during preconditioning and measurement) Aligned to 4KB 4KB for random writes, 2MB for sequential writes 1GB 3 Notes: 1. Accesses are close-ended. 2. The device protects previously written data during power failure. 3. Data chunk size is defined as the total amount of user data transferred within a unique READ MULTIPLE or WRITE MULTIPLE command; 1000 accesses performed for each chunk size. 1 Products and specifications discussed herein are subject to change by Micron without notice.
2 e.mmc performance potential during actual application use can be evaluated by measuring the total time to complete all commands during use model simulation. Features of a typical infotainment use model (Use_A) are shown in the tables below. One use model loop represents one hour of application use. Table 2: Command Distribution per Loop Command Occurrence Percentage CMD % CMD18 126, % CMD % CMD % Table 3: Data Size per Loop Command READ WRITE Data Size MB 14.54MB Table 4: Command Access Type per Loop Command Access Type Occurrence Percentage Random read 27, % Sequential read 99, % Random write % Sequential write % 2
3 The figures below show chunk size distribution for each Use_A loop. Figure 1 shows that 4KB and 32KB are the most frequently used read chunk sizes (40.13% and 50.83% respectively), and Figure 2 shows that 2KB is the most frequently used write chunk size (94.24%). Figure 1: Read Chunk Size Occurrence per Loop Figure 2: Write Chunk Size Occurrence per Loop The table below shows that enabling cache reduces the total write time for one Use_A loop by three times. Table 5: Command Duration for One Use Model Loop Cache Enabled Cache Disabled READ commands 216s 216s WRITE commands 1.7s 5.1s All commands 217.7s 221.1s Note: 1. Time measured using HS400 mode, x8 DDR after a full sequential preconditioning performed. 3
4 Use Model Improvement To improve use model performance, one strategy is to attempt to use 100% sequential reads after 100% sequential write preconditioning, both with 4KB chunk size multiples and 4KB command address multiples. This ideal use model was used to improve upon Use_A, which only attempts to achieve 100% sequential reads and not 100% sequential writes, and can be referred to when configuring use model performance. Use_A was modified to create Use_B, which uses 100% sequential reads at 32KB and 100% sequential writes at 4KB. Use_B and Use_A have the same quantity of read data ( MB per loop) and of written data (14.54 MB per loop), but Use_B command and chunk size distribution have been improved. Table 6: Use_A and Use_B Feature Comparison per Loop Feature Use_A Use_B Data read per loop MB MB Data written per loop 14.54MB 14.54MB CMD17 percentage 0.02% 0.00% CMD18 percentage 95.02% 95.27% CMD24 percentage 0.00% 0.00% CMD25 percentage 4.96% 4.73% CMD18 + CMD17 occurrence 126,558 75,055 CMD25 occurrence Random reads 21.53% 0% Sequential reads 78.47% 100% Random writes 99.83% 0% Sequential writes 0.17% 100% Read chunk size ~40% at 4KB, ~50% at 32KB 100% at 32KB Written chunk size ~94% at 2KB 100% at 4KB The table below shows use model performance improvement when switching to only sequential reads/writes and aligning chunk size distribution in Use_B. Notice that WRITE command improvement is more evident because only 0.17% of writes in Use_A were sequential. Table 7: Use_A and Use_B Command Duration Comparison for One Use Model Loop Use_A Duration Use_B Duration Cache state Cache enabled Cache disabled Cache enabled Cache disabled READ commands 216s 216s 211s 211s WRITE commands 1.7s 5.1s 1.2s 2.9s All commands 217.7s 221.1s 212.2s 213.9s Note: 1. Time measured using HS400 mode, x8 DDR after a full sequential preconditioning performed. 4
5 Figure 3: Use_A and Use_B WRITE Command Duration Comparison for One Use Model Loop 6 5 Duration (s) Use Improvement 0 Use_A cache enabled Use_A cache disabled Use Model Use_B cache enabled Use_B cache disabled 5
6 Revision History Revision History Rev. A 05/16 Initial release 8000 S. Federal Way, P.O. Box 6, Boise, ID , Tel: Sales inquiries: Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. 6
Command Register Settings Description Notes
Technical Note e.mmc Automotive 5.0 Cache Features TN-FC-50: e.mmc Automotive 5.0 Cache Features Introduction Introduction This technical note introduces an optional cache feature defined in the e.mmc
More informationMaximum Monolithic Density Density Number of Stacks N25Q512Axxx. 512Mb 2 256Mb N25Q00AAxxx 1Gb 4 MT25Qxs01Gxxx. 1Gb 2 512Mb MT25Qxs02Gxxx 2Gb 4
Technical te N25Q and MT25Q Serial Flash Stacked Devices Introduction Introduction This technical note describes the features of stacked devices for N25Q and MT25Q. These devices are memory with two or
More informationTechnical Note. Improving Random Read Performance Using Micron's SNAP READ Operation. Introduction. TN-2993: SNAP READ Operation.
Introduction Technical Note Improving Random Read Performance Using Micron's SNAP READ Operation Introduction NAND flash devices are designed for applications that require nonvolatile, high-density, fast
More informationMonitoring Ready/Busy Using the READ STATUS (70h) Command
Introduction Technical Note Monitoring Ready/Busy Status in 2Gb, 4Gb, and 8Gb Micron NAND Flash Devices For detailed NAND Flash device information, refer to www.micron.com/products/nand/. Introduction
More informationTechnical Note. Refresh Features for Micron e.mmc Automotive 5.0 Devices. Introduction. TN-FC-54: Refresh Features for e.mmc Automotive 5.
Technical te TN-FC-54: Refresh Features for e.mmc Automotive 5.0 Introduction Refresh Features for Micron e.mmc Automotive 5.0 Devices Introduction This technical note describes additional data refresh
More informationTechnical Note. Refresh Features for Micron e.mmc Automotive 5.1 Devices. Introduction. TN-FC-60: Refresh Features for e.mmc Automotive 5.
Technical Note TN-FC-60: Refresh Features for e.mmc Automotive 5.1 Introduction Refresh Features for Micron e.mmc Automotive 5.1 Devices Introduction This technical note introduces the concept of data
More informationTechnical Note NAND Flash Performance Increase with PROGRAM PAGE CACHE MODE Command
Technical Note NAND Flash Performance Increase with PROGRAM PAGE CACHE MODE Command TN-29-14: Increasing NAND Flash Performance Overview Overview NAND Flash devices are designed for applications requiring
More informationTechnical Note. Booting from Embedded MMC (e.mmc) Introduction. TN-FC-06: Booting from Embedded MMC. Introduction
Technical Note Booting from Embedded MMC (e.mmc) Introduction Introduction This technical note describes the features of booting a system (such as a wireless or embedded platform) from an embedded MultiMediaCard
More informationTechnical Note. One-Time Programmable (OTP) Operations. Introduction. TN-29-68: 2Gb: x8, x16 NAND Flash Memory. Introduction
Technical Note Introduction Introduction This technical note describes one-time programmable () operations in the following Micron NAND Flash devices: MT29F2G08ABAEAH4 MT29F2G08ABAEAWP MT29F2G08ABBEAH4
More informationTechnical Note. Migrating from Micron M25PE to Micron MT25Q 128Mb. Introduction. TN-25-36: Migrating from M25PE to MT25Q 128Mb.
Technical Note TN-25-36: Migrating from to MT25Q 128Mb Introduction Migrating from Micron to Micron MT25Q 128Mb Introduction The purpose of this technical note is to compare the features of Micron Flash
More informationSMART Self-Test Reference for P400e SATA SSDs
Introduction SMART Self-Test Reference for P400e SATA SSDs Introduction This technical note describes the self-test modes, commands, values, and result checks for the self-monitoring, analysis, and reporting
More informationTechnical Note. Reset Configurations for MT25Q, MT25T, and N25Q Flash Memory Devices. Introduction
Technical Note Reset onfigurations for MT25Q, MT25T, and N25Q Flash Memory Devices Introduction This technical note provides a list of the reset configurations available for the MT25Q, MT25T, and N25Q
More informationMicron part numbers e MMC registers Multilevel cell (MLC) to single-level cell (pslc) setting flow
Technical Note Introduction Migrating from e MMC Version 4.4 to 4.41 Devices Introduction This technical note describes the changes to the JEDEC e MMC specification from version 4.4 to version 4.41. It
More informationTechnical Note. Maximize SPI Flash Memory Design Flexibility With a Single Package. Introduction
Technical Note Maximize SPI Flash Memory Design Flexibility With a Single Package TN-25-08: Maximize SPI Flash Memory Design Flexibility Introduction Introduction This technical note discusses how a single
More informationTechnical Note. Migrating from Micron M25P to Micron MT25Q 128Mb. Introduction. TN-25-34: Migrating from M25P to MT25Q 128Mb.
Technical Note TN-25-34: Migrating from to MT25Q 128Mb Introduction Migrating from Micron to Micron MT25Q 128Mb Introduction The purpose of this technical note is to compare the features of Micron Flash
More informationPower-Up, Power-Down, and Brownout Considerations on MT25Q, MT25T, and MT35X NOR Flash Memory
Technical Note TN-25-38: Power Supply Considerations for NOR Flash Devices Introduction Power-Up, Power-Down, and Brownout Considerations on MT25Q, MT25T, and MT35X NOR Flash Memory Introduction This technical
More informationTechnical Note. SMART Command Feature Set for the eu500. Introduction. TN-FD-35: eu500 eusb SMART Commands. Introduction
Technical Note SMART Command Feature Set for the eu500 Introduction Introduction This technical note provides the self-monitoring, analysis, and reporting technology (SMART) command (B0h) feature set for
More informationTechnical Note. Adding ECC to a Data Bus with DDR4 x16 Components. Introduction. TN-40-41: Adding ECC With DDR4 x16 Components.
Technical Note TN-40-41: Adding ECC With DDR4 Components Introduction Adding ECC to a Data Bus with DDR4 Components Introduction Systems with lower density memory requirements use DRAM components to save
More informationParallel NOR and PSRAM 88-Ball MCP Combination Memory
Features Parallel NOR and PSRAM 88-Ball MCP Combination Memory MT38W2021A902ZQXZI.X69, MT38W2021A502ZQXZI.X69 Features Micron Parallel NOR Flash and PSRAM components RoHS-compliant, green package Space-saving
More informationTechnical Note. Enabling On-Die ECC NAND with JFFS2. Introduction. TN-29-75: Enabling On-Die ECC NAND with JFFS2. Introduction.
Technical Note Enabling On-Die ECC NAND with JFFS2 Introduction Introduction Terminology The Micron NAND Flash memory with on-die ECC is specifically designed to work with application processors that have
More informationTechnical Note. Migrating from Cypress's FL-S and FS-S to Micron's MT25Q. Introduction
Technical Note TN-25-37: Migrating from Cypress's FL-S and FS-S to Micron's Introduction Migrating from Cypress's FL-S and FS-S to Micron's Introduction This technical note describes the process for converting
More informationParallel NOR and PSRAM 56-Ball MCP Combination Memory
Parallel NOR and PSRAM 56-Ball MCP Combination Memory MT38L3031AA03JVZZI.X7A 56-Ball MCP: 128Mb Parallel NOR and 64Mb PSRAM Features Features Micron Parallel NOR Flash and PSRAM components RoHS-compliant,
More informationTechnical Note. Design Considerations when using NOR Flash on PCBs. Introduction and Definitions
Technical Note Design Considerations when using NOR Flash on PCBs Introduction and Definitions TN-13-30: NOR Flash Memory: PCB Design Considerations Introduction and Definitions Table 1: Definitions Term
More informationProduct Brief LPDDR2-PCM and Mobile LPDDR2 121-Ball MCP
Features Product Brief LPDDR2-PCM and Mobile LPDDR2 121-Ball MCP MT66R7072A10AB5ZZW.ZCA, MT66R7072A10ACUXZW.ZCA MT66R5072A10ACUXZW.ZFA Features Micron LPDDR2-PCM and LPDDR2 components RoHS-compliant, green
More informationMigrating from Spansion Am29F to Micron M29F NOR Flash Memories
Technical Note Introduction Migrating from Spansion Am29F to Micron M29F Memories Introduction This technical note explains the process for migrating an application based on Spansion Am29F200B, Am29F400B,
More informationUser Guide. Storage Executive. Introduction. Storage Executive User Guide. Introduction
Introduction User Guide Storage Executive Introduction This guide describes how to install and use Storage Executive to monitor and manage Micron solid state drives (SSDs). Storage Executive provides the
More informationTechnical Note. ONFI 4.0 Design Guide. Introduction. TN-29-83: ONFI 4.0 Design Guide. Introduction
Introduction Technical Note ONFI 4.0 Design Guide Introduction The ONFI 4.0 specification enables high data rates of 667 MT/s and 800 MT/s. These high data rates, along with lower input/output capacitance,
More informationTechnical Note. SMART Command Feature Set for the Introduction. TN-FD-34: 5100 SSD SMART Implementation. Introduction
Technical Note SMART Command Feature Set for the 5100 Introduction Introduction This technical note provides the self-monitoring, analysis, and reporting technology (SMART) command (B0h) feature set for
More informationTechnical Note. SMART Command Feature Set for the M500DC. Introduction. TN-FD-26: M500DC SSD SMART Implimentation. Introduction
Technical Note SMART Command Feature Set for the M500DC Introduction Introduction This technical note provides the self-monitoring, analysis, and reporting technology (SMART) command (B0h) feature set
More informationTechnical Note. Enabling SD/uSD Card Lock/Unlock Feature in Linux. Introduction. TN-SD-01: Enabling SD/uSD Card Lock/Unlock in Linux.
Technical Note TN-SD-: Enabling SD/uSD Card Lock/Unlock in Linux Introduction Enabling SD/uSD Card Lock/Unlock Feature in Linux Introduction The lock/unlock feature of SD/uSD cards enables the host system,
More informationTechnical Note. SMART Command Feature Set for the M510DC. Introduction. TN-FD-33: M510DC SSD SMART Implementation. Introduction
Technical Note SMART Command Feature Set for the M510DC Introduction Introduction This technical note provides the self-monitoring, analysis, and reporting technology (SMART) command (B0h) feature set
More informationTechnical Note Designing for High-Density DDR2 Memory
Technical Note Designing for High-Density DDR2 Memory TN-47-16: Designing for High-Density DDR2 Memory Introduction Introduction DDR2 memory supports an extensive assortment of options for the system-level
More informationOptions. Data Rate (MT/s) CL = 3 CL = 2.5 CL = 2-40B PC PC PC
DDR SDRAM UDIMM MT16VDDF6464A 512MB 1 MT16VDDF12864A 1GB 1 For component data sheets, refer to Micron s Web site: www.micron.com 512MB, 1GB (x64, DR) 184-Pin DDR SDRAM UDIMM Features Features 184-pin,
More informationTechnical Note Using Micron Asynchronous PSRAM with the NXP LPC2292 and LPC2294 Microcontrollers
TN-45-29: Using Micron Async PSRAM with NXP LPC2292/2294 Introduction Technical Note Using Micron Asynchronous PSRAM with the NXP LPC2292 and LPC2294 Microcontrollers Introduction The NXP LPC2292 and LPC2294
More informationMT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA, MT29F8G08MAA, MT29F16G08QAA,
Introduction Technical Note Improving NAND Flash Performance Using Two-Plane Command Enabled Micron Devices MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA, MT29F8G08MAA, MT29F16G08QAA, and MT29F32G08TAA
More informationTechnical Note. Client SATA SSD SMART Attribute Reference. Introduction. TN-FD-22: Client SATA SSD SMART Attribute Reference.
Technical Note Client SATA SSD SMART Attribute Reference Introduction Introduction This technical note describes the self-monitoring, analysis, and reporting technology (SMART) feature set available for
More informationDDR2 SDRAM UDIMM MT16HTF25664AZ 2GB MT16HTF51264AZ 4GB For component data sheets, refer to Micron s Web site:
DDR2 SDRAM UDIMM MT16HTF25664AZ 2GB MT16HTF51264AZ 4GB For component data sheets, refer to Micron s Web site: www.micron.com 2GB, 4GB (x64, DR): 240-Pin DDR2 SDRAM UDIMM Features Features 240-pin, unbuffered
More informationTechnical Note. Migrating from S29GL-S Devices to MT28FW NOR Flash Devices. Introduction. TN-13-41: Migrating S29GL-S to MT28FW NOR Flash Devices
Technical Note Migrating from S29GL-S Devices to MT28FW NOR Flash Devices TN-3-: Migrating S29GL-S to MT28FW NOR Flash Devices Introduction Introduction This technical note describes the process for converting
More informationNAND Flash Performance Improvement Using Internal Data Move
TN-29-15: NAND Flash Internal Data Move Introduction Technical Note NAND Flash Performance Improvement Using Internal Data Move Introduction IDM Overview Micron offers a NAND Flash feature known as internal
More informationDDR SDRAM UDIMM MT16VDDT6464A 512MB MT16VDDT12864A 1GB MT16VDDT25664A 2GB
DDR SDRAM UDIMM MT16VDDT6464A 512MB MT16VDDT12864A 1GB MT16VDDT25664A 2GB For component data sheets, refer to Micron s Web site: www.micron.com 512MB, 1GB, 2GB (x64, DR) 184-Pin DDR SDRAM UDIMM Features
More informationUser Guide. Storage Executive Command Line Interface. Introduction. Storage Executive Command Line Interface User Guide Introduction
User Guide Storage Executive Command Line Interface Introduction Introduction This guide describes how to use Micron's Storage Executive command line interface (CLI) to monitor, manage, and configure Micron
More information1. The values of t RCD and t RP for -335 modules show 18ns to align with industry specifications; actual DDR SDRAM device specifications are 15ns.
UDIMM MT4VDDT1664A 128MB MT4VDDT3264A 256MB For component data sheets, refer to Micron s Web site: www.micron.com 128MB, 256MB (x64, SR) 184-Pin UDIMM Features Features 184-pin, unbuffered dual in-line
More informationDDR SDRAM SODIMM MT8VDDT1664H 128MB 1. MT8VDDT3264H 256MB 2 MT8VDDT6464H 512MB For component data sheets, refer to Micron s Web site:
SODIMM MT8VDDT1664H 128MB 1 128MB, 256MB, 512MB (x64, SR) 200-Pin SODIMM Features MT8VDDT3264H 256MB 2 MT8VDDT6464H 512MB For component data sheets, refer to Micron s Web site: www.micron.com Features
More informationDDR SDRAM UDIMM MT8VDDT3264A 256MB MT8VDDT6464A 512MB For component data sheets, refer to Micron s Web site:
DDR SDRAM UDIMM MT8VDDT3264A 256MB MT8VDDT6464A 512MB For component data sheets, refer to Micron s Web site: www.micron.com 256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM Features Features 184-pin, unbuffered
More informationMT51J256M32 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks. Options 1. Note:
GDDR SGRM 8Gb: x6, x GDDR SGRM Features MTJ6M 6 Meg x I/O x 6 banks, Meg x 6 I/O x 6 banks Features = =.V ±% and.v ±% Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s 6 internal banks Four bank groups for t CCDL
More informationTechnical Note. J3F 32Mb, 64Mb, 256Mb Parallel NOR Flash Memory Software Device Drivers. Introduction. TN-12-50: J3F Software Device Drivers
Technical Note J3F 32Mb, 64Mb, 256Mb Parallel NOR Flash Memory Software Device Drivers TN-12-50: J3F Software Device Drivers Introduction Introduction This technical note provides a description of the
More informationDDR SDRAM UDIMM. Draft 9/ 9/ MT18VDDT6472A 512MB 1 MT18VDDT12872A 1GB For component data sheets, refer to Micron s Web site:
DDR SDRAM UDIMM MT18VDDT6472A 512MB 1 MT18VDDT12872A 1GB For component data sheets, refer to Micron s Web site: www.micron.com 512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM Features Features 184-pin,
More informationPARAMETER SYMBOL MIN MAX Address Access Time
TECHNICAL NOTE TN-00-17 TIMING SPECIFICATION DERATING FOR HIGH CAPACITANCE OUTPUT LOADING Introduction Memory systems are varied in the number of controllers, memory, and other devices that may share a
More informationOverview. TN-29-08: Hamming Codes for NAND Flash Memory Devices Overview
TN-9-8: Hamming Codes for NAND Flash Memory Devices Overview Technical Note Hamming Codes for NAND Flash Memory Devices For the latest NAND Flash product data sheets, see www.micron.com/products/nand/partlist.aspx.
More informationDDR SDRAM SODIMM MT16VDDF6464H 512MB MT16VDDF12864H 1GB
SODIMM MT16VDDF6464H 512MB MT16VDDF12864H 1GB 512MB, 1GB (x64, DR) 200-Pin DDR SODIMM Features For component data sheets, refer to Micron s Web site: www.micron.com Features 200-pin, small-outline dual
More informationTechnical Note. Migrating from Micron M29W Devices to MT28EW NOR Flash Devices. Introduction. TN-13-50: Migrating M29W to MT28EW NOR Flash Devices
Technical Note Migrating from Micron Devices to NOR Flash Devices TN-13-50: Migrating to NOR Flash Devices Introduction Introduction This technical note describes the process for converting a system design
More informationTechnical Note. Micron N25Q to Micron MT25Q Migration. Introduction. TN-25-01: Micron N25Q to Micron MT25Q Migration. Introduction
Technical Note Micron to Micron Migration TN-25-01: Micron to Micron Migration Introduction Introduction This technical note provides information to help convert a system design from the Micron Flash memory
More informationTechnical Note. Software Driver for M29EW NOR Flash Memory. Introduction. TN-13-12: Software Driver for M29EW NOR Flash Memory.
Technical Note TN-13-12: Software Driver for M29EW NOR Flash Memory Introduction Software Driver for M29EW NOR Flash Memory Introduction This technical note describes the C library source code for the
More informationNAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP )
NND Flash and Mobile LPDRM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMP ) MT29CxGxxMxxxxx Preliminary Features Features Micron NND Flash and LPDRM components RoHS-compliant, green package
More informationLinux Storage System Bottleneck Exploration
Linux Storage System Bottleneck Exploration Bean Huo / Zoltan Szubbocsev Beanhuo@micron.com / zszubbocsev@micron.com 215 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications
More informationComparing UFS and NVMe Storage Stack and System-Level Performance in Embedded Systems
Comparing UFS and NVMe Storage Stack and System-Level Performance in Embedded Systems Bean Huo, Blair Pan, Peter Pan, Zoltan Szubbocsev Micron Technology Introduction Embedded storage systems have experienced
More informationTwinDie 1.35V DDR3L SDRAM
TwinDie 1.35R3L SDRAM MT41K4G4 256 Meg x 4 x 8 Banks x 2 Ranks MT41K2G8 128 Meg x 8 x 8 Banks x 2 Ranks 16Gb: x4, x8 TwinDie DDR3L SDRAM Description Description The 16Gb (TwinDie ) DDR3L SDRAM (1.35V)
More informationLinux Storage System Analysis for e.mmc With Command Queuing
Linux Storage System Analysis for e.mmc With Command Queuing Linux is a widely used embedded OS that also manages block devices such as e.mmc, UFS and SSD. Traditionally, advanced embedded systems have
More informationEDW4032BABG 8 Meg x 32 I/O x 16 banks, 16 Meg x 16 I/O x 16 banks. Options 1. Note:
GR5 SGRM 4Gb: x16, x32 GR5 SGRM Features EW4032G 8 Meg x 32 I/O x 16 banks, 16 Meg x 16 I/O x 16 banks Features = = 1.6V/1.55V/1.5V ±3% and 1.35V ±3% ata rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s (MX) 16 internal
More informationMigrating from Macronix MX29GL-G/F and MX68GL-G Devices to MT28EW NOR Flash Devices
Technical Note TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Introduction Migrating from Macronix MX29GL-G/F and MX68GL-G Devices to MT28EW Introduction This technical note describes the process
More informationHow to Power On and Power Off the M29F Flash Memory Device
Technical Note TN-13-23: M29F Flash Memory Power Guidelines Introduction How to Power On and Power Off the M29F Flash Memory Device Introduction This technical note provides guidelines for providing power
More informationMobile LPDDR (only) 152-Ball Package-on-Package (PoP) TI-OMAP MT46HxxxMxxLxCG MT46HxxxMxxLxKZ
Mobile LPDDR (only) 152-Ball Package-on-Package (PoP) TI-OMAP MT6HxxxMxxLxCG MT6HxxxMxxLxKZ 152-Ball x Mobile LPDDR (only) PoP (TI-OMAP) Features Features / = 1.70 1.95V Bidirectional data strobe per byte
More informationDDR2 SDRAM UDIMM MT4HTF1664AY 128MB MT4HTF3264AY 256MB MT4HTF6464AY 512MB. Features. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM.
DDR2 SDRAM UDIMM MT4HTF1664AY 128MB MT4HTF3264AY 256MB MT4HTF6464AY 512MB 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Features Features 240-pin, unbuffered dual in-line memory module (UDIMM)
More information1.35V DDR3L SDRAM UDIMM
1.35V DDR3L SDRAM UDIMM MT4KTF25664AZ 2GB 2GB (x64, SR) 240-Pin DDR3L UDIMM Features Features DDR3L functionality and operations supported as defined in the component data sheet 240-pin, unbuffered dual
More informationMobile DRAM Power-Saving Features and Power Calculations
Technical Note TN-46-12: Mobile DRAM Power-Saving Features/Calculations Introduction Mobile DRAM Power-Saving Features and Power Calculations Introduction It s important for today s mobile system designer
More informationMigrating from Spansion S25FL512S to Micron N25Q 512Mb Flash Device
Technical Note TN-12-21: Migrating to Micron 512Mb Flash Device Introduction Migrating from Spansion 512S to Micron 512Mb Flash Device Introduction The purpose of this technical note is to compare features
More informationHuge Benefits With All-Flash and vsan 6.5
Huge Benefits With All-Flash and vsan 6.5 VMware s New vsan 6.5 Shows Substantial Gains With All-Flash Configurations Overview According to VMware, their release of vsan 6.5 brings real, tangible benefits,
More informationTwinDie 1.35V DDR3L SDRAM
TwinDie 1.35R3L SDRAM MT41K2G4 128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8 64 Meg x 8 x 8 Banks x 2 Ranks 8Gb: x4, x8 TwinDie DDR3L SDRAM Description Description The 8Gb (TwinDie ) DDR3L SDRAM (1.35V) uses
More informationBest Practices for SSD Performance Measurement
Best Practices for SSD Performance Measurement Overview Fast Facts - SSDs require unique performance measurement techniques - SSD performance can change as the drive is written - Accurate, consistent and
More informationOptimizing Performance and Reliability of Mobile Storage Memory
Optimizing Performance and Reliability of Mobile Storage Memory 8/5/14 You Sung Kim SK hynix America, Inc. August 2014 1 Memory Trend PC Era (1980~) CPU centric (GHz spec.) Smart & Mobile Era (2007~) Mobile
More information* Performance and power specifications subject to change
Features Industry Standard Embedded MultiMediaCard (emmc) Host Interface - JEDEC/MMC Standard Version 5.1 JESD84-B51 compliant - Backward compatible with previous MMC Performance - emmc clock speed: Up
More informationDDR2 SDRAM UDIMM MT9HTF6472AZ 512MB MT9HTF12872AZ 1GB MT9HTF25672AZ 2GB. Features. 512MB, 1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM UDIMM.
DDR2 SDRAM UDIMM MT9HTF6472AZ 512MB MT9HTF12872AZ 1GB MT9HTF25672AZ 2GB 512MB, 1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM UDIMM Features Features 240-pin, unbuffered dual in-line memory module Fast data transfer
More informationComparing Micron N25Q and Macronix MX25L Flash Devices
Technical Note TN-12-14: Comparing and Flash Devices Introduction Comparing Micron and Macronix Flash Devices Introduction The purpose of this technical note is to compare features of the Micron (32Mb
More informationTechnical Note. Comparing Micron N25Q and M25P Flash Devices. Introduction. TN-12-12: Comparing N25Q and M25P Flash Devices.
Technical Note Comparing Micron and Flash Devices TN-12-12: Comparing and Flash Devices Introduction Introduction The purpose of this technical note is to compare features of the Micron serial- Flash family
More informationDDR2 SDRAM SODIMM MT16HTF12864HZ 1GB MT16HTF25664HZ 2GB. Features. 1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM. Features
DDR SDRAM SODIMM MT6HTF864HZ GB MT6HTF5664HZ GB GB, GB (x64, DR) 00-Pin DDR SDRAM SODIMM Features Features 00-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC-300, PC-400,
More informationGLS85VM1016B / 1032B / 1064B Industrial Temp emmc NANDrive
Features Industry Standard Embedded MultiMediaCard (emmc) Host Interface - JEDEC/MMC Standard Version 4.4 JESD84-A44 compliant - Backward compatible with emmc 4.3 Performance - emmc clock speed: Up to
More informationOptimize your system designs using Flash memory
Optimize your system designs using Flash memory Howard Cheng Sr. Segment Applications Manager Embedded Solutions Group, Micron 2012 Micron Technology, Inc. All rights reserved. Products are warranted only
More informationGLS85VM1004A / 1008A / 1016A / 1032A Industrial Temp emmc NANDrive
Features Industry Standard Embedded MultiMediaCard (emmc) Host Interface - JEDEC/MMC Standard Version 4.4 JESD84-A44 compliant - Backward compatible with emmc 4.3 Performance - emmc clock speed: Up to
More informationTechnical Note. GDDR5X: The Next-Generation Graphics DRAM. Introduction. TN-ED-02: GDDR5X: The Next-Generation Graphics DRAM.
Technical Note TN-ED-02: GDDR5X: The Next-Generation Graphics DRAM Introduction GDDR5X: The Next-Generation Graphics DRAM Introduction Since its market introduction in 2008, GDDR5 SGRAM has been the choice
More informationNVMe SSD Performance Evaluation Guide for Windows Server 2016 and Red Hat Enterprise Linux 7.4
NVMe SSD Performance Evaluation Guide for Windows Server 2016 and Red Hat Enterprise Linux 7.4 Publication # 56367 Revision: 0.70 Issue Date: August 2018 Advanced Micro Devices 2018 Advanced Micro Devices,
More informationGLS85LP0512P / 1002P / 1004P / 1008P Industrial Grade PATA NANDrive
Features Industry Standard ATA / IDE Bus Interface - Host Interface: 16-bit access - Supports 48-bit address feature set - Supports up to PIO Mode-6 1) - Supports up to Multi-Word DMA Mode-4 2) - Supports
More informationi.mx 6UltraLite Product Usage Lifetime Estimates
NXP Semiconductors Document Number: AN5198 Application Notes Rev. 2, 08/2016 i.mx 6UltraLite Product Usage Lifetime Estimates 1. Introduction This document describes the estimated product lifetimes for
More informationTechnical Note Using CellularRAM to Replace UtRAM
Technical Note Using CellularRAM to Replace UtRAM TN-45-13: CellularRAM replacing UtRAM Introduction Introduction The Micron family of CellularRAM devices is designed to be backward compatible with 6T
More informationi.mx 6Solo/6DualLite Product Lifetime Usage Estimates
Freescale Semiconductor, Inc. Application Note Document Number: AN4725 Rev. 2, 02/2015 i.mx 6Solo/6DualLite Product Lifetime Usage Estimates This document describes the estimated product lifetimes for
More informationDDR2 SDRAM UDIMM MT16HTF25664AZ 2GB MT16HTF51264AZ 4GB. Features. 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM. Features
DDR2 SDRAM UDMM MT16HTF25664AZ 2GB MT16HTF51264AZ 4GB 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDMM Features Features 240-pin, unbuffered dual in-line memory module Fast data transfer rates: PC2-8500, PC2-6400,
More informationDDR2 SDRAM SODIMM MT8HTF12864HZ 1GB MT8HTF25664HZ 2GB. Features. 1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM. Features
DDR2 SDRAM SODIMM MT8HTF12864HZ 1GB MT8HTF25664HZ 2GB 1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM Features Features 200-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates:
More informationImage Sensor Demo System Kits
Image Sensor Demo System Kits Introduction Introduction The Micron Imaging demonstration system family supports the full line of Micron s CMOS image sensor products. The current demonstration system is
More informationMaking Informed Memory Choices FTF-IND-F0378
Making Informed Memory Choices FTF-IND-F0378 Freescale Technology Forum Jim Cooke JCooke@micron.com Mike Kim MikeKim@micron.com April 10, 2014 2014 Micron Technology, Inc. All rights reserved. Products
More informationModule height: 30mm (1.18in) Note:
DDR3 SDRAM UDIMM MT8JTF12864AZ 1GB MT8JTF25664AZ 2GB 1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM Features Features DDR3 functionality and operations supported as defined in the component data sheet 240-pin,
More information440GX Application Note
DDR Memory and the PowerPC 440GP/GX DDR SRAM Controller January 22, 2008 Abstract DDR (double data rate) memory is very similar to existing SDRAM (synchronous dynamic random access memory) in many ways,
More informationLSI MegaRAID Advanced Software Evaluation Guide V3.0
LSI MegaRAID Advanced Software Evaluation Guide V3.0 Contents: n Current sightings to be aware of with Evaluation Kits n MegaRAID Controller Cards that support Advanced Software n Optimum Controller Settings
More informationMUS- INDNGFF60XXXXX(3)
Please visit us at www.maximustek.com/en for more information. MUS- INDNGFF60XXXXX(3) Maximus NGFF 60mm Industrial Solid State Drive Data Sheet Version 1.1 Aug, 2013 Revision History Revision Date Description
More informationWHITE PAPER. Optimizing Virtual Platform Disk Performance
WHITE PAPER Optimizing Virtual Platform Disk Performance Optimizing Virtual Platform Disk Performance 1 The intensified demand for IT network efficiency and lower operating costs has been driving the phenomenal
More informationEnabling NAND On-Die ECC for OMAP3 Using Linux/Android OS with YAFFS2
Introduction Enabling NAND On-Die ECC for OMAP3 Using Linux/Android OS with YAFFS2 Introduction Considerations Process shrinks on the newest generations of NAND Flash devices have lead to a gradual increase
More information1.35V DDR3L SDRAM SODIMM
1.35V DDR3L SDRAM SODIMM MT4KTF12864HZ 1GB MT4KTF25664HZ 2GB 1GB, 2GB (x64, SR) 204-Pin 1.35V DDR3L SODIMM Features Features DDR3L functionality and operations supported as defined in the component data
More informationMigrating from MX30LF2G(4G)28AB to MX30LF2G(4G)18AC
Migrating from MX30LF2G(4G)28AB to MX30LF2G(4G)18AC 1. Introduction This application note is a migration guide for migrating Macronix MX30LF2G(4G)28AB to MX30LF2G(4G)18AC 2Gb(4Gb) SLC NAND Flash. The document
More informationTechnical Note DDR2 (Point-to-Point) Package Sizes and Layout Basics
Introduction Technical Note DDR2 (Point-to-Point) Package Sizes and Layout Basics Introduction Point-to-point designers face many challenges when laying out a new printed circuit board (PCB). The designer
More informationDDR2 SDRAM UDIMM MT18HTF12872AZ 1GB MT18HTF25672AZ 2GB MT18HTF51272AZ 4GB. Features. 1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM UDIMM.
DDR SDRAM UDIMM MT8HTF87AZ GB MT8HTF567AZ GB MT8HTF57AZ 4GB GB, GB, 4GB (x7, ECC, DR) 40-Pin DDR SDRAM UDIMM Features Features 40-pin, unbuffered dual in-line memory module Fast data transfer rates: PC-8500,
More informationMicron and Hortonworks Power Advanced Big Data Solutions
Micron and Hortonworks Power Advanced Big Data Solutions Flash Energizes Your Analytics Overview Competitive businesses rely on the big data analytics provided by platforms like open-source Apache Hadoop
More informationi.mx 6ULL Product Usage Lifetime Estimates
NXP Semiconductors Document Number: AN5337 Application Note Rev. 1, 03/2017 i.mx 6ULL Product Usage Lifetime Estimates 1. Introduction This document describes the estimated product lifetimes for the i.mx
More information