Highly Reliable 50 V RF Power LDMOS Devices Designed Specifically for Broadcast and ISM Applications
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1 November 2008 Highly Reliable 50 V RF Power LDMOS Devices Designed Specifically for Broadcast and ISM Applications PN118 Antoine Rabany Chengdu Design Center Development Manager owners. Freescale Semiconductor, Inc
2 New 50V LDMOS Devices for Industrial and Broadcast Applications Freescale breaks new ground with 50V RF power LDMOS New standards set for RF power transistors designed specifically for industrial, broadcast and pulsed applications MUNICH, Germany (Freescale Technology Forum) Oct. 16, 2007 Freescale Semiconductor has expanded its portfolio of 50 V LDMOS RF power transistors with three new devices that set new standards for efficiency, gain, and thermal resistance when compared to competing bipolar and MOSFET devices. The introduction provides competitive advantages for Freescale s growing roster of industrial customers, while creating entirely new RF power opportunities for the company in broadcast, scientific, medical, radar and pulsed applications markets. owners. Freescale Semiconductor, Inc
3 Evolution of Freescale s 50 V LDMOS Supporting ISM and Broadcast Applications Phase I: June 2006 IMS/MTTS, San Francisco 50 V VHV6 LDMOS technology introduction (MRF6V2300N) A key technology enhancement, tailor-made for Broadcast and ISM markets Over-molded plastic packaging a first in ISM, the most cost-effective solutions available Performance levels exceed those of competitive products Phase II: June 2007 IMS/MTTS, Hawaii Industry s first 1 kw rated RF Power Amplifier for ISM (MRF6VP11KH) First 50 V LDMOS 1 kw device, suitable for pulsed applications requiring high output power Best-in-class drain efficiency of 65% at 1kW peak in Class C Significant cost and board space savings Phase III: October 2007 Freescale Technology Forum, Munich 50 Volt RF Power Amplifiers for HF/VHF/UHF markets (MRF6VP41KH,MRF6VP2600H) Unprecedented power levels covering the HF/VHF broadcast band Industry s first air-cavity packaged device optimized for solder-down mounting Portfolio supports Broadcast and Pulsed Radar applications Phase IV: April 2008 National Association of Broadcasters (NAB), Las Vegas 50% more power than leading competitor for UHF markets (MRF6VP3450H) Unprecedented power levels covering the UHF broadcast band Multiple technology innovations produce extremely rugged device Portfolio supports analog and digital Broadcast applications owners. Freescale Semiconductor, Inc
4 1) Operation up to 3.8 GHz Frequency in MHz LDMOS Products Maximum Frequency of Operation Year Introduced LDMOS Development Trends 3) Cost effective overmolded plastic packaging 2) Multi-stage power IC s 4) 50V LDMOS device MRF6V2300NB Gain & Efficiency vs Output Power technology Power Gain (db) Gain Drain Eff MHz, 50V Output Power (Watts) owners. Freescale Semiconductor, Inc
5 Technology Comparison Matrix Attribute Si VMOS 28V RF- LDMOS 50V RF- LDMOS CW eff. at P1dB Power Gain Thermal resistance CW Power Density High Intrinsic Zin / Zout (wideband) On-Die Passives Integration Variability / Performance spread Technology Maturity Reliability owners. Freescale Semiconductor, Inc
6 Freescale Introduced 50 Volt LDMOS to ISM Market June, 2006 Key technology enhancement tailor-made for HF/VHF/UHF markets Utilizing long history of RF experience and innovation, Freescale introduced a 50 V extension to the widely accepted 28 V LDMOS technology VHV6 LDMOS Performance levels exceed those of competitive ISM products Highest gain figures in the industry - up to 27 db! Less gain stages needed saves cost and board space Exceptional efficiency - up to 70% Today - Proven, mature technology with production data for >1 year Over-molded plastic packaging A first in ISM, the most cost-effective solutions available! owners. Freescale Semiconductor, Inc
7 MRF6VP3450H Key Messages 50% more peak power than the nearest competitor. Revolutionizing the Broadcast industry with unprecedented combination of power, ruggedness and efficiency. Unprecedented Power Extremely Rugged Ultra Efficient 50 V VHV6 LDMOS: A key technology enhancement, tailor-made for Broadcast& ISM markets Multiple technology breakthroughs enable the MRF6VP3450H to handle stringent mismatched and PAR conditions Careful attention to the device s thermal design to maintain a low operating junction temperature 23 db 90 W Avg. (DVB-T OFDM Signal, 64 QAM) 23 db 450 W PEP (Two-tone Test) Unprecedented power levels covering the UHF broadcast band Operating at 50 V with 450 W Peak Power, 10 µsec Pulse Width, 2.5% Duty Cycle, the MRF6VP3450H can survive 10:1 VSWR at all phase angles Incorporates protection against electrostatic discharge (ESD), making it manufacturing friendly Exceptional efficiency: 28% (DVB-T OFDM Signal, 64 QAM) 45% (Two-tone Test) Low thermal resistance lessens the overall cooling capacity needed by the transmitter Less gain stages needed saving cost and board space and improving reliability Higher range of negative gate-source voltage improves RF overdrive capability Leading efficiency and low thermals decrease operating cost for TV broadcasters owners. Freescale Semiconductor, Inc
8 Standard 250 W Line-up owners. Freescale Semiconductor, Inc
9 Freescale 320 W Line-up owners. Freescale Semiconductor, Inc
10 MRF6VP3450H/HS Technical Features owners. Freescale Semiconductor, Inc
11 RF Power HF/VHF Broadcast Products owners. Freescale Semiconductor, Inc
12 Complete Broadcast Portfolio owners. Freescale Semiconductor, Inc
13 HF/VHF RF Power Portfolio for applications up to 450 MHz MRF6V2300N/NB Highlights Single-ended part operating at 50 V: TO-272 WB-4 TO-270 WB W Rated P1dB 27 db Gain at 220 MHz 68% Efficiency at CW P1dB 0.24 o C/W Θ jc RoHS compliant upgrade of the MRF151G MRF6V2010N/NB Production qualified owners. Freescale Semiconductor, Inc
14 HF/VHF RF Power Portfolio for applications up to 450 MHz MRF6V2150N/NB Highlights Single Ended part operating at 50 V: TO-272 WB-4 TO-270 WB W Rated P1dB 25.5 db Gain at 220 MHz 69% Efficiency at CW P1dB 0.3 o C/W Θ jc MRF6V2010N/NB RoHS compliant upgrade of the MRF151 Production qualified owners. Freescale Semiconductor, Inc
15 HF/VHF RF Power Portfolio for applications up to 450 MHz MRF6V2010N/NB TO TO Highlights Single Ended part operating at 50 V: 10 W Rated P1dB 25 db Gain at 220 MHz 68% Efficiency at CW P1dB RoHS compliant, driver Production qualified owners. Freescale Semiconductor, Inc
16 Freescale Broadcast Beyond Silicon COLLATERAL Product summary pages available online: Data sheets for all devices in production, contact Taura/Jeannette for prelim data sheets. Promotional brochure (Doc# BR1607 Rev. 1) MRF6VP3450H Fact Card (Doc# BRDCAST50V Rev. 0) Above documentation is available through Freescale s Literature Distribution Center Click on Order Literature under Related Links. SAMPLES / BOARDS Samples of all devices are available now Application demo boards available now Production NOW! MODELS Large-signal product models available in Q4, 2008 owners. Freescale Semiconductor, Inc
17 ISM Portfolio Overview owners. Freescale Semiconductor, Inc
18 HF/VHF ISM Portfolio for ISM and Broadcast Applications up to 450 MHz owners. Freescale Semiconductor, Inc
19 Over-molded RF Plastic Packaging A Freescale Success Story Over 20 million devices delivered in RF over-molded plastic packages. Excellent reliability record RoHS compliant, Low thermal resistance: 0.3 C/W Freescale Competitive Products PCB Heatsink MRF6V2150N PCB PCB Heatsink PCB With 68% efficiency at 150 W: Tj is increased by +21 C With 55% efficiency and 0.6 C/W at 150 W: Tj is increased by +73 C Lower junction temperature means increased reliability and lifetime owners. Freescale Semiconductor, Inc
20 Benefits of Higher Gain ISM pulse example line-up owners. Freescale Semiconductor, Inc
21 MRF6VP11KH 1 kw Peak Push-Pull HF/VHF Device First 1 kw Peak rated LDMOS device P1 db 1080 W, Efficiency 65% P3 db 1308 W, Efficiency 70% θ JC 0.03 C/W (preliminary, pulsed conditions) PRF6VP11KH Power Sweep at 130 MHz Gain Power Gain (db) Efficiency P1dB=1080 W Drain Efficiency (%) Vdd = 50 V, Idq = 2 A F = 130 MHz 100usec, 20% P3dB=1308 W Output Power (W) owners. Freescale Semiconductor, Inc
22 MRF6VP41KH/HS for pulsed ISM and Broadcast Applications up to 450 MHz MRF6VP41KH/S Highlights Push-pull part operating at 50 V: NI W Pout peak 20.5 db Gain at 450 MHz 64% Drain Efficiency RoHS compliant air cavity ceramic package MRF6V2010N/NB owners. Freescale Semiconductor, Inc
23 MRF6VP41KH/HS 1 kw Peak Push-Pull HF/VHF Device First 1 kw Peak rated LDMOS device P1 db 1092 W, Efficiency 64% P3 db 1235 W, Efficiency 69% θ JC 0.03 C/W (preliminary, pulsed conditions) MRF6VP41KH Drivedown at 450 MHz Power Gain (db) Vdd = 50V, Idq = 150mA F = 450 MHz 100usec, 20% P1dB=1092 W P3dB=1235 W Drain Efficiency (%) Output Power (W) Gain Drain Efficiency owners. Freescale Semiconductor, Inc
24 MRF6VP2600H for ISM and Broadcast Applications up to 250 MHz MRF6VP2600H Highlights Push-pull part operating at 50 V: 600 W Rated P1dB NI-1230 Typical DVBT OFDM performance at 225 MHz 26 db Gain at 225 MHz 29% Drain Efficiency -61dBc ACPR MRF6V2010N/NB RoHS compliant air cavity ceramic package owners. Freescale Semiconductor, Inc
25 Benefits of Higher Gain ISM pulse example line-up owners. Freescale Semiconductor, Inc
26 Freescale RF Power Avionics MRF6V14300H and MRF6V10010N owners. Freescale Semiconductor, Inc
27 Evolution of Freescale s 50 V LDMOS 50 V VHV6 LDMOS Technology Introduction Industry s First 1 kw Rated RF Power Amplifier for ISM 50 V RF Power Amplifiers for HF/VHF/UHF Markets 50 V VHV6 LDMOS UHF Broadband RF Power Amplifier 50 V RF Power Amplifiers for L-Band Markets June 2006 June 2007 October 2007 April 2008 June 2008 VHV6 is a 50 V extension to Freescale s widely accepted 28 V LDMOS technology This key technology enhancement is tailor-made for the Broadcast, Industrial, Scientific, Medical (ISM) & now pulsed Radar & Avionics markets Performance levels exceed those of competitive products High gain and efficiency figures Low thermal resistance lessens the overall cooling capacity needed by the transmitter Multiple technology innovations produce extremely rugged device Higher power density means more power per device... so less devices per system! Significant cost and board space savings owners. Freescale Semiconductor, Inc
28 Avionics Portfolio Key Messages First 50-volt LDMOS power transistor line-up for L-Band radar applications High-performance line-up designed to offer industry-leading efficiency, gain and thermal resistance Unprecedented Power History of Innovation Ultra Efficient (Thermals) 50 V VHV6 LDMOS: A key technology enhancement, tailor-made for pulsed Radar and Avionics markets Combining our history of experience, innovation, reliability, and cost-consciousness, Freescale enables designers to accelerate their designs to succeed in a dynamic market. Careful attention to the device s thermal design to maintain a low operating junction temperature Unprecedented power levels covering the L-band 17 db Gain Experience and expertise in Design, Modeling, Characterization, Packaging, and Applications support drive innovation to multiple markets. Incorporates protection against electrostatic discharge (ESD), making it manufacturing friendly Exceptional Efficiency: 60% Low thermal resistance lessens the overall cooling capacity needed by the transmitter Less gain stages needed saving cost and board space and improving reliability Higher range of negative gate-source voltage improves RF overdrive capability Leading efficiency and low thermals decrease operating cost owners. Freescale Semiconductor, Inc
29 Freescale L-Band Line-up MMG3014N MRF6V10010N MRF6V14300H MMG3014N MRF6V10010N MRF6V14300H Totals Typical Gain 19.5 db 25 db 17 db 62 db P out 25 dbm 8 W 330 W 330 W Peak Drain Efficiency N/A 70% 60% 58% Current Draw ma.2 A 11.0 A 11.2 A V dd = 50 V, 1400 MHz, 300 μsec on 12% duty cycle pulsed mode, 0.5 db splitting and combining loss owners. Freescale Semiconductor, Inc
30 L-Band Portfolio: MRF6V14300H RF Power transistors designed for applications operating between 1200 and 1400 MHz, 1% to 12% duty cycle Devices are suitable for use in pulsed applications Single-ended device operating at 50 V 1400 MHz, 300 μsec pulse width, 12% duty cycle 330 W Peak Output Power 17 db Gain 60% Drain Efficiency <0.12 o C/W Θ jc Highlights RoHS compliant air cavity ceramic NI-780 package Samples available today! Production qualified today! owners. Freescale Semiconductor, Inc
31 L-Band Portfolio: MRF6V10010N RF Power transistors designed for applications operating between 1030 and 1400 MHz, 1% to 20% duty cycle These devices are suitable for use in pulsed applications Highlights Single-ended part operating at 50 V 1400 MHz, 300 μsec pulse width, 12% duty cycle 8 W Peak Output Power 22 db Gain 60% Efficiency RoHS compliant over-molded plastic PLD-1.5 package Samples available today! Production qualified today! owners. Freescale Semiconductor, Inc
32 MRF6V14300H and MRF6V10010N Features VHV6 (Very High Voltage,6 th generation) Enhancement to Freescale widely accepted 28 V LDMOS Qualified for operation at 50 V Industry leading RF figures of merit The final stage device MRF6V14300 is available in industry standard air-cavity ceramic package The driver is designed in innovative over-molded plastic package Internally matched for Ease of Use Integrated ESD Protection, with greater Negative Gate-Source Voltage Range for improved Class C Operation Commercial Off The Shelf Product (COTS) RoHS Compliant owners. Freescale Semiconductor, Inc
33 Freescale L-Band Beyond Silicon Samples / Boards Samples for both devices available now Test fixtures available upon request Large-signal product models: ADS compatible large-signal models are currently under development and are expected to be available in Q Direct application support by Freescale RF Power experts Detailed plastic and ceramic package mounting available owners. Freescale Semiconductor, Inc
34 Session Location Online Literature Library Related Session Resources Sessions Session ID Title Demos Pedestal ID Demo Title owners. Freescale Semiconductor, Inc
35 owners. Freescale Semiconductor, Inc
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