Revision: Rev

Transcription

1 Hipac SIM Card Interface EMI Filter and ESD Protection Application Note AN243 Revision: Rev RF and Protection Devices

2 Edition Published by Infineon Technologies AG Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

3 Application Note AN243 Revision History: Previous Revision: no Revision Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG A-GOLD, BlueMoon, COMNEON, CONVERGATE, COSIC, C166, CROSSAVE, CanPAK, CIPOS, CoolMOS, CoolSET, CONVERPATH, CORECONTROL, DAVE, DUALFALC, DUSLIC, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, E-GOLD, EiceDRIVER, EUPEC, ELIC, EPIC, FALC, FCOS, FLEXISLIC, GEMINAX, GOLDMOS, HITFET, HybridPACK, INCA, ISAC, ISOFACE, IsoPACK, IWORX, M-GOLD, MIPAQ, ModSTACK, MUSLIC, my-d, NovalithIC, OCTALFALC, OCTAT, OmniTune, OmniVia, OptiMOS, OPTIVERSE, ORIGA, PROFET, PRO-SIL, PrimePACK, QUADFALC, RASIC, ReverSave, SatRIC, SCEPTRE, SCOUT, S-GOLD, SensoNor, SEROCCO, SICOFI, SIEGET, SINDRION, SLIC, SMARTi, SmartLEWIS, SMINT, SOCRATES, TEMPFET, thinq!, TrueNTRY, TriCore, TRENCHSTOP, VINAX, VINETIC, VIONTIC, WildPass, X-GOLD, XMM, X-PMU, XPOSYS, XWAY. Other Trademarks AMBA, ARM, MULTI-ICE, PRIMECELL, REALVIEW, THUMB of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO. OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Sattelite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update Application Note AN243, Rev / 13

4 List of Content, Figures and Tables Table of Content 1 Introduction Features Overview System Specification SIM Card and Universal Integrated Circuit Card (UICC) Smart Card Interface SIM Card Interface Requirements Electrical Requirements Infineon BGF106c SIM Card ESD Protection and EMI Filter Application ESD Protection EMI Filter PCB Layout Authors List of Figures Figure 1 BGF106c in WLP-8-11-N-3D... 5 Figure 2 BGF106c Internal Schematic... 5 Figure 3 SIM / USIM Card adapter in a mobile phone. Contact pins are heavily exposed to ESD Contact and air discharge strikes... 6 Figure 4 BGF106c pinout referred to SIM card interface data and voltge supply lines... 7 Figure 5 BGF106c ESD Protection Concept... 8 Figure 6 Clamping +15kV IEC Contact Discharge, I/O (C1/C3) and RST line... 9 Figure 7 Clamping +15kV IEC Contact Discharge, clock line (B1/B3)... 9 Figure 8 BGF106c Forward Transmission Figure 9 BGF106c Time Domain Simulation assuming a 50Ohm driver and 30pF system capacitance Figure 10 BGF106c PCB Layout Suggestion List of Tables Table 1 Smart Card supply levels and current levels... 6 Table 2 SIM card interface data and power supply lines... 7 Table 3 SIM card interface electrical requirements according to ISO/IEC , ISO/IEC and ETSI TS V8.0.0 ( )... 7 Table 4 BGF106c Frequency Response Application Note AN243, Rev / 13

5 Introduction 1 Introduction 1.1 Features ESD protection circuit and EMI filter interface for the SIM card ESD protection according to IEC for ±15 kv contact discharge on external IOs Wafer level package with SnAgCu solder balls 400 m solder ball pitch RoHS and WEEE compliant package Figure 1 BGF106c in WLP-8-11-N-3D 1.2 Overview BGF106C is an ESD protection circuit and EMI filtering interface for SIM cards. All external IOs are protected against ESD pulses of ±15 kv contact discharge according to IEC The wafer level package is a green lead-free and halogen-free package with a size of only 1.2 mm x 1.2 mm and a total height of 0.6 mm Figure 2 BGF106c Internal Schematic Application Note AN243, Rev / 13

6 System Specification 2 System Specification 2.1 SIM Card and Universal Integrated Circuit Card (UICC) Smart Card Interface The SIM (Subscriber Identity Module) [2G] or Universal Integrated Circuit Card Smart Card [3G] Interface is an essential buildingblock of mobile devices. No 2G or 3G mobile device will work, respectively be able to receive calls or make calls without a working SIM or USIM card. Therefore it is essential to protect this interface from any physical damage. Besides mechanical damage the SIM or Smart Card interface is heavily exposed to electrostatic discharge phenomena, figure 3. ESD exposed SIM-Card contact spring SIM-Card Figure 3 SIM / USIM Card adapter in a mobile phone. Contact pins are heavily exposed to ESD Contact and air discharge strikes 2.2 SIM Card Interface Requirements The BGF106c provides a sufficient ESD protection and EMI filtering to protect the smart card interface from electrostatic discharge destruction with respect to the electrical requirements of the smart card interface. Smart Card clock frequency ranges from 1MHz up to 20MHz, depending on the SIM card s supported clock speed. GSM standard clock speed is 4MHz. Furthermore there are three supply classes available - Class A, B and C. The logic levels of the SIM card correspond to the supply class, table 1. Table 1 Smart Card supply levels and current levels Symbol Parameter Conditions Min Max Unit Vcc supply Class A V Class B V Class C V Icc supply current Class A - 60 ma Class B - 50 ma Class C - 30 ma Application Note AN243, Rev / 13

7 System Specification 2.3 Electrical Requirements The BGF106c pinout relations to the SIM card interface lines are shown in table 2 and figure 4. Table 2 SIM card interface data and power supply lines Name Corresponding BGF106C Pin Purpose Vcc C2 Card Power Supply RST A2/A3; C1/C3 Card Reset Signal CLK B1/B3 Card Clock Signal Data I/O A2/A3; C1/C3 Card Data Signal Vcc RST CLK Data I/O RST CLK Data I/O C2 A2/A3 B1/B3 C1/C3 ->Vcc ->RST ->CLK ->Data I/O Figure 4 BGF106c pinout referred to SIM card interface data and voltge supply lines Table 3 SIM card interface electrical requirements according to ISO/IEC , ISO/IEC and ETSI TS V8.0.0 ( ). Symbol Parameter Conditions Min Max Unit CLK V IH V IL high-level input low-level input 0.7Vcc Vcc V Class A and B V Class C 0 0.2Vcc V t r rise time 9% of period t f fall time 9% of period Data I/O V IH V IL V OH V OL RST high-level input low-level input high-level output low-level output all classes 0.7Vcc Vcc V all classes Vcc V all classes 0.7Vcc Vcc V Class A Vcc V Class B Vcc V Class C Vcc V I OL =500µA Vcc V V IH high-level input all classes 0.8Vcc Vcc V Application Note AN243, Rev / 13

8 Infineon BGF106c SIM Card ESD Protection and EMI Filter Application Table 3 SIM card interface electrical requirements according to ISO/IEC , ISO/IEC and ETSI TS V8.0.0 ( ). Symbol Parameter Conditions Min Max Unit V IL low-level input all classes 0 0.2Vcc V t r rise time 100 ns t f fall time 100 ns 3 Infineon BGF106c SIM Card ESD Protection and EMI Filter Application Infineon s BGF106c ESD Protection and EMI filtering concept is based on a Pi filter structure (figure 4, 5). Two TVS diodes and a series resistor form a so called CRC lowpass filter structure. The junction capacitance of the TVS diodes provides the capacitance for the CRC lowpass filter. 3.1 ESD Protection As the SIM card is a fundamental building block of every mobile device the ESD protection has to provide very low clamping s to all the interface signal lines and supply lines. In the BGF106c every signal line is protected using two TVS diodes. With this concept clamping s performance can be drastically improved. In case of an ESD Strike the BGF106c clamps down the harmful in three stages to provide ultra low clamping s to the baseband controller. In the first stage the applied ESD strike is clamped by the TVS diode at the input pins of the BGF106c. Before the residual pulse reaches the second diode it is further decreased by the drop across the series resistors of the device. With this concept clamping s of less than 45V (peak ) and 30ns can be achieved when 15kV IEC Contact discharge is applied (figure 5, 6 and 7). 45V peak 15kV ESD Strike V R1 V clamp2 V clamp1 Clamping Baseband Chip Figure 5 BGF106c ESD Protection Concept Application Note AN243, Rev / 13

9 Infineon BGF106c SIM Card ESD Protection and EMI Filter Application Figure 6 Clamping +15kV IEC Contact Discharge, I/O (C1/C3) and RST line Figure 7 Clamping +15kV IEC Contact Discharge, clock line (B1/B3) 3.2 EMI Filter GSM requirements regarding EMI are very harsh. Normally the baseband controller is shielded by a metal box on the mobile s pcb. Due to its nature as a human interface the SIM card interface can not be shielded. For this reason it is mandatory to provide a good suppression for signals at the GSM frequency bands, 850MHz and above. Hence, harmonics mainly generated by the SIM Card clock signal have to be attenuated. Whereas the data signals are less critical as their frequency is normally half the clock frequency. The EMI filter has to provide a strong attenuation for frequencies above 850MHz for 2G and 3G systems. Forward transmission measurements of the BGF106c show very good suppression of mobile frequencies (figure 8 and table 4). Therefore out of band interferer are blocked from radiating to the baseband controller as well as from radiating to the SIM card interface. Application Note AN243, Rev / 13

10 Infineon BGF106c SIM Card ESD Protection and EMI Filter Application Table 4 BGF106c Frequency Response Line A3 A2 (RST/Data) Line B3 A1 (CLK) Line C3 C1 (RST/Data) Passband attenuation db db db -3dB point relative to passband 280 MHz 460 MHz 290 MHz Min. attenuation (range 0.8-4GHz MHz MHz MHz Figure 8 BGF106c Forward Transmission On the other hand it has to be kept in mind that the Signal Integrity must not be affected by the EMI filter. Referring to the strict GSM requirements rise time of the signals must not exceed 9% of the cycle time independent of the maximum system capacitance of 30pF (C simcard +C driver +C EMI +C parasitics ). Below a system simulation is performed assuming a 50 Ohm driver impedance. For the load a worst case scenatio with a SIM card capacitance (C simcard.) of 10pF is created. The BGF106c contributes about 16pF (C EMI ). The remaining capacitance for the C driver +C parasitics fits with 4pF quite well. The logic levels are according to supply class C (1.8V Vcc). This simulation is a worst case simulation as SIM card capacitance normally lower than 10pF. It can be seen that for a 4MHz clock signal, standard GSM clock frequency, the maximum 15%/70% rise time of 18ns ( 9% of cycle time) is not exceeded, even for a 30pF system capacitance (figure 9). Application Note AN243, Rev / 13

11 Vout_10pF, V Vout_30pF, V BGF106c Infineon BGF106c SIM Card ESD Protection and EMI Filter Application 2.0 4MHz 5MHz SIM SIM Clock Clock Signal Signal *Vcc *Vcc Figure 9 time, nsec BGF106c Time Domain Simulation assuming a 50Ohm driver and 30pF system capacitance 3.3 PCB Layout The ultra small wafer level package, WLP-8-11-N-3D (1.2 x 1.2 x 0.6 mm³), is optimized for PCB space saving requirements in mobile devices and provides a straight forward layout possibility at the same time (figure 10). Figure 10 BGF106c PCB Layout Suggestion Application Note AN243, Rev / 13

12 Authors 4 Authors Thomas Schwingshackl Infineon Application Engineer RF and Protection Devices Alexander Glas Infineon Technical Marketing RF and Protection Devices Application Note AN243, Rev / 13

13 w w w. i n f i n e o n. c o m Published by Infineon Technologies AG AN243