Load IPS5551T FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
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1 Data Sheet No. PD6168-D IPS5551T FUY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Input referenced to + Vcc E.S.D protection Input referenced to Vcc Description The IPS5551T is a fully protected three terminal high side switch with built-in short-circuit, over-temperature, ESD protection, inductive load capability. The input signal is referenced to Vcc. When the input voltage Vcc - Vin is higher than the specified threshold, the output power MOSFET is turned on. When the Vcc - Vin is lower than the specified Vil threshold, the output MOSFET is turned off. Input noise immunity is improved by an hysterisis. When the input is left floating, an internal current source pulls it up to Vcc. The over-current protection latches off the high side switch if the output current exceeds the specified Isd. The over-temperature protection latches off the switch if the junction temperature exceeds the specified value Tsd. The device is reset by opening the input pin high. Typical Connection Product Summary Rds(on) 6.mΩ (max) V clamp Ishutdown Vcc (op.) Truth Table Op. Conditions Normal Normal Over current Over current Over-temperature Over-temperature (3) In H H H (3) In is referenced to Vcc. In = means (Vcc -Vin) >Vih In = H means (Vcc - Vin) <Vil 4V A V Out H (latched) (latched) + VCC Package Vcc Input signal ogic control Out In oad SUPER TO22 (Refer to lead assignment for correct pin configuration) 1
2 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Vcc lead. (Tj = 25 o C unless otherwise specified). PCB mounting uses the standard footprint with 7µm copper thickness Symbol Parameter Min. Max. Units Test Conditions V cc -V in max Maximum input voltage V cc -V in1 max Max. transient Input voltage (less than 1s) Iin max Maximum input current -1 2 ma V cc -V out max Maximum output voltage V Isd cont. Diode max. continuous current (1) (rth = 62 o C/W) 2.8 Isd1 cont. Diode max. continuous current (1) (rth = 5 o C/W) 35 Isd pulsed Diode max. pulsed current (1) Pd Power dissipation (rth = 62 o C/W) 2 W ESD1 Electrostatic discharge voltage (Human Body) tbd C = pf, R = 15Ω ESD2 Electrostatic discharge voltage (Machine Model) tbd kv C = 2 pf, R = Ω, =1µH T stor. Max. storage temperature Tj max. Max. junction temperature Tlead ead temperature (soldering 1 seconds) 3 V A o C Thermal Characteristics Symbol Parameter Typ. Max. Units Test Conditions Rth 1 Thermal resistance free air 6 Rth 2 Thermal resistance with standard footprint 6 o C/W Rth 3 Thermal resistance with 1" footprint 35 Rth 4 Thermal resistance junction to case.7 Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vcc - Vin Continuous input voltage 6 18 Vcc Supply to power ground voltage 6 18 Iout Continuous output current (rth c/amb. < 5 o C/W, Tj = 125 o C) 35 Iout Continuous output current Tamb=85 o C (TAmbient = 85 o C, Tj = 125 o C, free air) 8 V A (1) imited by junction temperature. Pulsed current is also limited by wiring 2
3 Static Electrical Characteristics (Tj = 25 o C and Vcc = 14V unless otherwise specified.) Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) 1 ON state resistance Iout=35A,Vcc -Vin=12V see Fig. 6 mω Rds(on) 2 ON state resistance 4.6 Iout=17A, Vcc -Vin= 6V Rds(on) 3 ON state resistance Tj = 15 o C 7.4 Iout = 35A, Tj = 15 o C Vclamp 1 Vcc to Vout active clamp voltage 35 4 Iout = 1mA Vclamp 2 Vcc to Vout active clamp voltage Iout = 35A - t < us V Vsd Body diode forward voltage.85 1 Id = 35A, Vcc -Vin = V Vcc (op) Operating voltage range Iq Quiescent current 13 5 µa Vcc-Vin=V,Vcc-Vout= 12V Iin Input current Vcc - Vin = 14V ma Iin, on Input current when ON 1.3 Vcc - Vin = Vih Vih High level input threshold voltage Vcc - Vin (note 2) Vil ow level input threshold voltage V Vcc - Vin (note 2) Vhys Input hysterisis Switching Electrical Characteristics Vcc = 14V, Resistive oad =.4Ω, T j = 25 o C, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Tdon Turn-on delay time to Vcc -Vout =.9 Vcc 1 3 Tr 1 Rise time to Vcc -Vout = 5 V 16 5 µs See figure 2 Tr 2 Rise time from the end of Tr1 to Vcc -Vout =.1 Vcc 2 4 dv/dt (on) Turn on dv/dt V/µs Eon Turn ON energy 25 mj Tdoff Turn-off delay time Vcc -Vout =.1 Vcc 13 3 Tf Fall time to Vcc -Vout =.9 Vcc 25 µs 5 dv/dt (off) Turn OFF dv/dt 2 6 V/µs Eoff Turn OFF energy 6 mj See figure 3 Protection Characteristics T j = 25 o C, and Vcc = 14V (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature shutdown threshold 165 o C Isd Over current shutdown threshold 6 15 A See fig. 4 Treset Minimum time for protection reset 5 µs (2) Input threshold are measured directly between the input pin and the tab. Any parasitic resistance in common between the load current path and the input signal path can significantly affect the thresholds. 3
4 Functional Block Diagram VCC 4V clamp 1k 6mA Charge pump IN 35V + 4.7V 4.1V - S Q evel shift driver R Over curren + - A Over temperatur + - Tj 165 C VOUT ead Assignments 2 (Vcc) In Vcc Out Super TO22 4
5 Vcc-Vin Vcc-Vin max Vcc-Vin1 max Vcc-Vin (op) Vih Vil Vhys Iin Iin max Iin1,2 Iin(on) Vcc In IPS 5551 Out Vcc-Vout Vcc-Vout max Vclamp1 Vclamp2 Iout Iout max -Ids cont. -Ids pulsed Iout 85 C Isd Iq Vcc-Vin Vcc 9% Vcc-Vout 5V 1 % Td on Tr1 DV/dt(on) Tr2 Figure 1 - Voltages and currents definition Figure 2 - Switching time definitions (turn-on) Vcc-Vin Vcc-Vin 12V V 9% Vcc-Vout DV/dt(off) Iout Isd OI shutdown t < T reset t > T reset 1 % Td off Tf Tjsd Tj OT shutdown Figure 3 - Switching time definitions (turn-off) Figure 4 - Protection timing diagram 5
6 T clamp Vcc - Vin Iout Vclamp Vcc - Vout ( Vcc ) POWER Measurement ( see Appl. Notes to evaluate power dissipation ) Figure 5 - Active clamp waveforms Figure 6 - Rds(on) measurement schematic Figure 7 - Rds(on) (mω) Vs Vcc-Vin (V) Figure 8 - Normalized Rds(on) (%) Vs Tj ( o C) 6
7 5 4 3 single pulse 1 Hz rth=6 C/W dt=25 C Hz rth=6 C/W dt=25 C Figure 9 - Rds(on) (mω) Vs Iout (A) Figure 1 - Iclamp (A) Vs Inductive oad (µh) 8 imited by package 6 Rthc/amb= 1 C/W Rthc/amb= 5 C/W Current path capability should be above this curve 4 2 Rthc/amb= 1 C/W Rthc/amb= 2 C/W Free air 1 oad characteristic should be below this curve Tj = 25 c free air Figure 11 - Max. load current (A) Vs Temperature ( o C) Figure 12 - Iout (A) Vs Protection resp. Time (ms) 7
8 12 1.E+2 Free air 1.E+1 1inch² PCB E+ 1.E-1 Infinite heatsink 2 1.E Figure 13 - Isd (A) Vs Tj ( o C) 1.E-3 1E-5 1E Figure 14 - Transient thermal impedance ( o C/W) Vs Time (s) Figure 15 - Icc (ma) Vs Vcc-Vin (V) Figure 16 - Iin (ma) Vs Tj ( o C) 8
9 5 4 8 Eon Eoff 3 2 VIH VI Hysteresis Figure 17 - Vih, Vil threshold (V) Vs Tj ( o C) Figure 18 - Eon, Eoff (mj) Vs Iout (A). I=Imax vs (see fig.1) A I=1A.1.1 1E+1 1E+2 1E+3 1E+4 1E+5 1E+6 Figure 19 - Eon (mj) Vs Inductive load (µh) (Vcc = 14V, R load =.5Ω) 9
10 DZ1 VCC D2 R1 IN IPS V Battery OUT on off OAD System ground DZ1, R1 : optional additional voltage transient protection D2 : optional additional reverse battery protection See application note for details Power ground Case outline Super TO22 Figure 2 - Automotive typical connection A 11. [.433] 1. [.394] 5. [.196] 4. [.158] B 9. [.354] 8. [.315].25 [.1] B A 1.5 [.59].5 [.2] 15. [.59] 14. [.552] [.531] 12.5 [.493] [.157] 3.5 [.138] 14.5 [.57] 13. [.512] EAD ASSIGNMENTS MOS F ET 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN IGBT 1 - GATE 2 - COECTOR 3 - EMIT TER 4 - COECTOR 2.55 [.] 2X 1.3 [.51] 3X.9 [.36].25 [.1] B A 1. [.39] 4X.7 [.28] 3. [.118] 2.5 [.99] O S 1. DIMENSIONING & TOERANCING PER ASME Y14.5M CONT RO ING DIMENS ION: MIIMET ER. 3. DIMENSIONS ARE SHOWN IN MIIMETERS [INCHES]. 4. OUTINE CONFORMS TO JEDEC OUTINE TO-273AA IR WORD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245 Tel: (31) Data and specifications subject to change without notice. 6/21/22 1
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