SP11xx Series Discrete Unidirectional TVS Diode

Transcription

1 SP11xx Series Discrete Unidirectional TVS Diode RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact and air discharge, IEC ) without performance degradation. Additionally, each diode can safely dissipate 80A (SP1105S) of 8/20μs surge current (IEC nd edition) with very low clamping voltages. Pinout and Functional Block Diagram PIN1 Features ESD, IEC , ±30kV contact, ±30kV air EFT, IEC , 40A (5/50ns) Lightning, IEC nd edition, 80A (t P =8/20μs, SP1105S) Low clamping voltage Low leakage current Moisture Sensitivity Level (MSL-1) Lead free and RoHS compliant PIN2 Applications Switches / Buttons Test Equipment / Instrumentation Point-of-Sale Terminals Medical Equipment Notebooks / Desktops / Servers Computer Peripherals Automotive Electronics Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.

2 Absolute Maximum Ratings Symbol Parameter Value Units T OP Operating Temperature -40 to 125 C T STOR Storage Temperature -55 to 150 C Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. SP1105 Electrical Characteristics (T OP Reverse Standoff WM 1μA 5.0 V Reverse Drop =1mA 6.0 V =5V 1.0 μa Clamp 1 V C =1A, =8/20µs, Fwd 7.3 V =70A, t P =8/20μs, Fwd 10.9 V =100ns, I/O to GND 0.05 Ω =8/20µs 70 A ESD Withstand 1 V ESD Diode Capacitance 1 C D Reverse Bias=0V, f=1mhz 630 pf SP1105S Electrical Characteristics (T OP Reverse Standoff WM 1μA 5.0 V Reverse Drop =1mA V =5V 1.0 μa Clamp 1 V C =40A, =8/20µs, Fwd 8.3 V =80A, t P =8/20μs, Fwd 9.2 V =100ns, I/O to GND 0.05 Ω =8/20µs 80 A ESD Withstand 1 V ESD Diode Capacitance 1 C D Reverse Bias=0V, f=1mhz 630 pf

3 SP1112 Electrical Characteristics (T OP Reverse Standoff WM 1μA 12.0 V Reverse Drop =1mA 13.3 V =12V 1.0 μa =1A, =8/20µs, Fwd 15.2 V Clamp 1 V C =40A, t P =8/20μs, Fwd 26.5 V =100ns, I/O to GND 0.05 Ω =8/20µs 40.0 A ESD Withstand 1 V ESD Diode Capacitance 1 C D-GND Reverse Bias=0V, f=1mhz 230 pf SP1115 Electrical Characteristics (T OP Reverse Standoff WM 1μA 15.0 V Reverse Drop =1mA 16.7 V =15V 1.0 μa I Clamp 1 PP =1A, =8/20µs, Fwd 19.3 V V C =30A, =8/20µs, Fwd 30.2 V =100ns, I/O to GND 0.05 Ω =8/20µs 30.0 A ESD Withstand 1 V ESD Diode Capacitance 1 C I/O-GND Reverse Bias=0V, f=1mhz 180 pf SP1124 Electrical Characteristics (T OP Reverse Standoff WM 1μA 24.0 V Reverse Drop =1mA 26.7 V =24V 1.0 μa I Clamp 1 PP =1A, =8/20µs, Fwd 29.8 V V C =20A, =8/20µs, Fwd 44.7 V =100ns, I/O to GND 0.1 Ω =8/20µs 20.0 A ESD Withstand 1 V ESD Diode Capacitance 1 C I/O-GND Reverse Bias=0V, f=1mhz 130 pf Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns

4 8/20μS Pulse Waveform Transmission Line Pulsing (TLP) Plot 110% % 90% 25 SP1112 SP1115 SP1124 Percent of 80% 70% 60% 50% 40% TLP Current (A) SP1105(S) 30% 20% 5 10% 0% Time (μs) TLP (V) SP1105, SP1105S Clamping voltage vs. for 8/20μs waveshape SP1112, SP1115, SP1124 Clamping voltage vs. for 8/20μs waveshape Clamp (V C ) SP1105 SP1105S Clamp (V C ) SP1124 SP1115 SP Peak Pulse Current - (A) Peak Pulse Current - (A) Capacitance vs. Bias Capacitance (pf) SP1105(S) 100 SP1112 SP1115 SP Bias (V)

5 SP1105 IEC kv Contact ESD Clamping SP1105 IEC kv Contact ESD Clamping SP1105S IEC kv Contact ESD Clamping SP1105S IEC kv Contact ESD Clamping SP1112 IEC kv Contact ESD Clamping SP1112 IEC kv Contact ESD Clamping

6 Temperature TVS Diode Arrays (SPA Diodes) SP1115 IEC kv Contact ESD Clamping SP1115 IEC kv Contact ESD Clamping SP1124 IEC kv Contact ESD Clamping SP1124 IEC kv Contact ESD Clamping Soldering Parameters Reflow Condition Pre Heat - Temperature Min (T s(min) ) 150 C - Temperature Max (T s(max) ) 200 C Pb Free assembly T P Ramp-up t P Critical Zone TL to TP - Time (min to max) (t s ) secs Average ramp up rate (Liquidus) Temp (T L ) to peak 3 C/second max T L T S(max) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 3 C/second max - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) seconds Peak Temperature (T P ) /-5 C T S(min) 25 t S time to peak temperature Time Time within 5 C of actual peak Temperature ( ) seconds Ramp-down Rate 6 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 260 C

7 Part Marking System Part Numbering System PIN1 xx K x Part code Part code : AA = SP UTG AB = SP UTG AC = SP UTG AD = SP UTG AE = SP1105S-01UTG Date code Assembly site TVS Diode Arrays (SPA Diodes) Number of Channels SP 11** 01 U T G Ordering Information G= Green T= Tape & Reel Package U: 1.6x1.0mm DFN Part Number Package Marking Min. Order Qty. SP UTG 1.6x1.0mm DFN AAKx 3000 SP UTG 1.6x1.0mm DFN ABKx 3000 SP UTG 1.6x1.0mm DFN ACKx 3000 SP UTG 1.6x1.0mm DFN ADKx 3000 SP1105S-01UTG 1.6x1.0mm DFN AEKx 3000 Package Dimensions D L 1.6x1.0mm DFN Symbol Millimeters Min Nor Max E b A h A Pin1 1 2 Top View e Bottom View h D E b L A1 A e 1.10 BSC h Side View 1.00 Recommended Soldering pad layout (mm)

8 Embossed Carrier Tape & Reel Specification T Do Y P (I) PO (II) E Symbol Millimeters A / BO D ±0.05 F(III) W B / K / F / KO SECTION Y-Y AO Y P1 X X P / W / User Feeding Direction REF 3 SECTION X-X Pin 1 Location