KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package AIGW50N65H5 650V 50A 1.66V 175 C AG50EH5 PG-TO247-3

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1 HighspeedfastIGBTinTRENCHSTOP TM 5technology FeaturesandBenefits: HighspeedH5technologyoffering: BestinClassefficiencyinhardswitchingandresonant topologies PlugandplayreplacementofpreviousgenerationIGBTs 650Vbreakdownvoltage LowgatechargeQG Maximumjunctiontemperature175 C Dynamicallystresstested QualifiedaccordingtoAECQ101 Greenpackage(RoHScompliant) CompleteproductspectrumandPSpiceModels: G C E Applications: Offboardcharger Onboardcharger DC/DCconverter PowerFactorcorrection Packagepindefinition: Pin1gate Pin2&backsidecollector Pin3emitter KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package AIGW50N65H5 650V 50A 1.66V 175 C AG50EH5 PGTO2473 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1

2 TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditions Revision History Disclaimer Datasheet 2 V2.1

3 MaximumRatings Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25 Cvaluelimitedbybondwire TC=100 C IC Pulsedcollectorcurrent,tplimitedbyTvjmax 1) ICpuls A Turn off safe operating area VCE 650V,Tvj 175 C,tp=1µs 1) A Gateemitter voltage TransientGateemittervoltage(tp 10µs,D<0.010) PowerdissipationTC=25 C PowerdissipationTC=100 C VGE Ptot ±20 ± Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, 2) wave soldering 1.6mm (0.063in.) from case for 10s 260 Mounting torque, M3 screw Maximum of mounting processes: 3 A V W C M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction case Thermal resistance junction ambient Rth(jC) 0.55 K/W Rth(ja) 40 K/W ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 V Collectoremitter saturation voltage VCEsat VGE=15.0V,IC=50.0A Tvj=25 C Tvj=125 C Tvj=175 C Gateemitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25 C Tvj=175 C Gateemitter leakage current IGES VCE=0V,VGE=20V 100 na Transconductance gfs VCE=20V,IC=50.0A 62.0 S V µa 1) Defined by design. Not subject to production test. 2) Package not recommended for surface mount applications Datasheet 3 V2.1

4 ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 2800 Output capacitance Coes VCE=25V,VGE=0V,f=1MHz 54 Reverse transfer capacitance Cres 11 Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case QG VCC=520V,IC=50.0A, VGE=15V pf nc LE 13.0 nh SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 21 ns Rise time VCC=400V,IC=25.0A, tr 12 ns VGE=0.0/15.0V, Turnoff delay time td(off) RG(on)=12.0Ω,RG(off)=12.0Ω, 173 ns Fall time Lσ=30nH,Cσ=30pF tf 11 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 0.45 mj Turnoff energy Eoff diode reverse recovery mj Total switching energy Ets 0.61 mj Turnon delay time td(on) Tvj=25 C, 20 ns Rise time VCC=400V,IC=6.0A, tr 4 ns VGE=0.0/15.0V, Turnoff delay time td(off) RG(on)=12.0Ω,RG(off)=12.0Ω, 187 ns Fall time Lσ=30nH,Cσ=30pF tf 24 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 0.10 mj Turnoff energy Eoff diode reverse recovery mj Total switching energy Ets 0.14 mj Datasheet 4 V2.1

5 SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=150 C Turnon delay time td(on) Tvj=150 C, 20 ns Rise time VCC=400V,IC=25.0A, tr 13 ns VGE=0.0/15.0V, Turnoff delay time td(off) RG(on)=12.0Ω,RG(off)=12.0Ω, 200 ns Fall time Lσ=30nH,Cσ=30pF tf 13 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 0.61 mj Turnoff energy Eoff diode reverse recovery mj Total switching energy Ets 0.85 mj Turnon delay time td(on) Tvj=150 C, 18 ns Rise time VCC=400V,IC=6.0A, tr 4 ns VGE=0.0/15.0V, Turnoff delay time td(off) RG(on)=12.0Ω,RG(off)=12.0Ω, 225 ns Fall time Lσ=30nH,Cσ=30pF tf 31 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 0.16 mj Turnoff energy Eoff diode reverse recovery mj Total switching energy Ets 0.23 mj Datasheet 5 V2.1

6 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] TC,CASETEMPERATURE[ C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj 175 C) TC,CASETEMPERATURE[ C] Figure 2. Collectorcurrentasafunctionofcase temperature (VGE 15V,Tvj 175 C) VGE = 20V 120 VGE = 20V IC,COLLECTORCURRENT[A] V 15V 12V 10V 8V 7V 6V IC,COLLECTORCURRENT[A] V 15V 12V 10V 8V 7V 6V 30 5V 30 5V VCE,COLLECTOREMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=150 C) Datasheet 6 V2.1

7 IC,COLLECTORCURRENT[A] Tvj=25 C Tvj=150 C VCEsat,COLLECTOREMITTERSATURATION[V] IC=6.25A IC=12.5A IC=25A IC=50A VGE,GATEEMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=20V) Tvj,JUNCTIONTEMPERATURE[ C] Figure 6. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 td(off) tf td(on) tr 1000 td(off) tf td(on) tr t,switchingtimes[ns] t,switchingtimes[ns] IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tvj=150 C,VCE=400V, VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamic RG,GATERESISTANCE[Ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,tvj=150 C,VCE=400V, VGE=0/15V,IC=25A,dynamictestcircuitin Datasheet test circuit in Figure E) 7 Figure E) V2.1

8 t,switchingtimes[ns] td(off) tf td(on) tr VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] typ. min. max Tvj,JUNCTIONTEMPERATURE[ C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,vce=400v,vge=0/15v, IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E) Tvj,JUNCTIONTEMPERATURE[ C] Figure 10. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.5mA) 2.4 Eoff Eoff 9 Eon Ets 2.1 Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,tvj=150 C,VCE=400V, VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω, RG,GATERESISTANCE[Ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,tvj=150 C,VCE=400V, VGE=0/15V,IC=25A,dynamictestcircuitin Datasheet dynamic test circuit in Figure E) 8 Figure E) V2.1

9 Eoff Eon Ets 1.0 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Tvj,JUNCTIONTEMPERATURE[ C] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,vce=400v,vge=0/15v, IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,tvj=150 C,VGE=0/15V, IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) VCC=130V VCC=520V 1E+4 Cies Coes Cres VGE,GATEEMITTERVOLTAGE[V] C,CAPACITANCE[pF] QG,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=50A) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collectoremittervoltage (VGE=0V,f=1MHz) Datasheet 9 V2.1

10 1 Zth(jc),TRANSIENTTHERMALIMPEDANCE[K/W] D = E6 1E5 1E tp,pulsewidth[s] single pulse i: ri[k/w]: τi[s]: 1.8E4 1.7E Figure 17. IGBTtransientthermalimpedance (D=tp/T) Datasheet 10 V2.1

11 AIGW50N65H5 High speed switching series fifth generation Package Drawing PGTO2473 Datasheet 11 V 2.1

12 AIGW50N65H5 High speed switching series fifth generation Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a 10% VGE b t Qa IC(t) Qb di 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 12 V 2.1

13 AIGW50N65H5 High speed switching series fifth generation Revision History AIGW50N65H5 Revision:, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 Data sheet created Datasheet 13 V 2.1

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