Enabling TB-Class and GB/s-Performance SSDs with HLNAND
|
|
|
- Bernice Franklin
- 5 years ago
- Views:
Transcription
1 Enabling TB-Class and GB/s-Performance SSDs with HLNAND November 2011
2 Agenda Introduction HyperLink NAND (HLNAND) Flash Technology Signal Integrity Summary 2
3 NAND Flash History Vendor and product differentiation tied mainly to density and reliability Reliability decreases with cell size Cell scaling nearly at wall 3
4 Nearly at Scaling Wall, What s Next? How will Flash producers make a compelling story at the wall? Reliability will still play a differentiating role Feature enrichment and performance improvements will also help distinguish products and serve product niches 4
5 Flash Market Landscape Cloud 5
6 Flash-based Emerging Market Source: SanDisk Feb
7 Consumer SSD Market 200+ SSD vendors, but little differentiation 7
8 Enterprise-Grade Storage SSDs Critical Factors: Reliability Performance/Power (High IOPS & Throughput) Scalability 8
9 Agenda Introduction HyperLink NAND (HLNAND) Flash Technology Signal Integrity Summary 9
10 Conventional NAND Flash Interface 8 bit, bidirectional, multi-drop bus Asynchronous LVTTL signaling up to 40Mb/s/pin Speed degradation with more than 4 devices on bus Chip Enable (CE) signal required for each device Power hungry 3.3V I/O or 1.8V I/O Recently DDR NAND (ONFI, Toggle) introduced Host Interface Controller CE 1 CE 2 CE 3 NAND NAND NAND 10
11 Performance and Scalability (Multi-drop Bus) Adding more channels: System design complexity Poor Signal Integrity (SI) Higher power consumption ECC/IO overhead per channel Complex PCB design requiring 7-10 layers Adding more devices per channel: Compromise between performance and # of devices 11
12 HLNAND Topology Daisy-chain, point-to-point connection ring topology Cleaner signaling than multi-drop bus High speed and no-roll-off with increasing load Host Interface Controller HLNAND HLNAND HLNAND HLNAND 12
13 Performance and Scalability (HLNAND Ring Topology) Higher performance 800MB/s and beyond (compared to 200MB/s & 400MB/s for conventional architecture) Virtually unlimited number of devices can be cascaded (higher number of ways per channel) Minimizing the number of channels per system 13
14 Performance and Scalability (HLNAND Ring Topology) Superior signal integrity (SI) No ODT required Statistically 50% lower power consumption per channel due to powersaving feature Scalable without diminishing performance for Tera Byte-Class & GB/s-Performance SSDs 14
15 HLNAND Parts HLNAND 1.0 (DDR266) HLNAND 2.0 (DDR533/667/800) E/S Sample Available Available HLNAND Interface Chip TSMC 180nm TSMC 90nm NAND Core MCP Memory Capacity 32nm/2xnm Async. or DDR-type NAND 128Gb ~ 1Tb (4 ~ 16 die stacked) 32nm/2xnm Async. or DDR-type NAND 128Gb ~ 1Tb (4 ~ 16 die stacked) I/O Data Rate 266 MB/s 533/667/800 MB/s Package 14mm x 18mm 100-ball BGA 14mm x 18mm 100-ball BGA 15
16 HL & HL2 MCP Architecture Bank 0 Bank 1 32Gb/ 64Gb NAND (LUN 0) 32Gb/ 64Gb NAND (LUN 1) 32Gb/ 64Gb NAND (LUN 0) 32Gb/ 64Gb NAND (LUN 1) X8 X8 x8 HyperLink In HLNAND1/2 Bridge Chip x8 HyperLink Out X8 X8 32Gb/ 64Gb NAND (LUN 0) 32Gb/ 64Gb NAND (LUN 1) 32Gb/ 64Gb NAND (LUN0) 32Gb/ 64Gb NAND (LUN 1) Four-bank architecture Fully independent LUN (Logical Unit) operation Bank 2 Bank3 16
17 HLNAND vs. HLNAND2 HLNAND (HL1) HLNAND2 (HL2) STI STO STI STO STI STO Up to DDR-266 Parallel distributed clock 1.8V LVCMOS DDR-533/DDR-667/DDR-800 Source-synchronous differential clock JEDEC 1.2V HSUL_12 17
18 256Gb HLNAND E/S in
19 256Gb HLNAND2 E/S in 2011 Achieved fully working engineering sample of 256Gb HLNAND2 in Sep
20 HLNAND: 9-die Stacked View 20
21 HLNAND Interface Chip 21
22 256Gb HLNAND Performance (DDR266 and Room and 70 C 22
23 HLNAND2: (8+1)-die Stacked View To Be Updated 23
24 HLNAND2 Interface Chip Die Size = 5mm x 2mm = 10mm 2 24
25 256Gb HLNAND2 Performance (DDR800 Room Temp. 25
26 HLNAND/HLNAND2 Key Features DuplexRW (QDR533/QDR 1600): Simultaneous Read/Write operations, effective 533MBs/1600MBs data throughput Built-in EDC (Error Detection Code), on and off control Packet truncation for saving power Independent automatic status bus - separate status ring (STI/STO) 26
27 DuplexRW (QDR Operation) Simultaneously write to upstream device while reading from downstream device Effectively doubles data throughput HLNAND: doubled to 533MB/s HLNAND2: doubled to 1600MB/s Write Data Flow Target Device for Write HLNAND Controller Read Data Flow Target Device for Read 27
28 Built-in EDC (Error Detection Code) 6-byte Command Architecture 1 st Byte 2 nd Byte 3 rd Byte 4 th Byte 5 th Byte 6 th Byte Device ID OP Code ADD1 ADD2 ADD3 EDC 6 bytes Command 6 th byte EDC Input (user input) 1 st byte ~ 5 th byte command Input Built-in EDC Comparator Built-in EDC Generator Match? No No execution Yes Execute Operation 28
29 Packet Truncation Write Data Flow Target Device for Write HLNAND Controller No I/O Switching No Power Consumption HLNAND Controller No I/O Switching No Power Consumption Read Data Flow Target Device for Read 29
30 Independent Automatic Status Bus Separate Status Ring (STI/STO) 30
31 Agenda Introduction HyperLink NAND (HLNAND) Flash Technology Signal Integrity Summary 31
32 HLNAND2 Signal Integrity (Signal to Ball Assignment) Output Signal Group Input Signal Group 32
33 HLNAND2 Signal Integrity (General Topology Model) HOST/HLNAND PKG B1 Via TL1 Via TL2 Via TL3 Via HOST/HLNAND PKG B2 L=L1 W=W1 S=S1 L=L2 W=W2 S=S2 L=L3 W=W3 S=S3 L=L2 W=W2 S=S2 L=L1 W=W1 S=S1 3 Line Model for X-talk PCB Impedance = 50 Ω ±7.5 Ω Space of Lines = 4 and 8 mil Min. time width of RCV eye window = 0.66UI Driver Strength = 50 Ω ODT is not required 33
34 HLNAND2 SI Simulation (DDR-800 Point-To-Point, No Termination) TL2=4.5 TL2= % UI (963p) 75.4% UI (943p) TL2=5.5 TL2= % UI (929p) 74.1% UI (926p) 34
35 HLNAND2 Test Board 35
36 Measured Signal (CK Output/DQ Signals from 8th CK DQ0 36
37 Measured Data Eye (DQ Signals from 4th DQ0 37
38 Measured Data Eye (DQ Signals from 8th DQ0 (Data Eye) DQ0 38
39 Agenda Introduction HyperLink NAND (HLNAND) Flash Technology Signal Integrity Summary 39
40 HLNAND Target Market Application Specific High Performance Flash Memory 40
41 HLNAND Applications Consumer SSD Embedded Flash Enterprise SSD SSD Modules 41
42 HLSSD Development Native PCIe Flash Controller (ASIC/FPGA) X4 or x8 PCIe Gen2/Gen3 TB Capacity GB/s-Performance HLSSD PCIe 2.x 42
43 HLNAND Flash Benefits Higher Performance Longer System Longevity* Lower Power Consumption High Scalability Interface Extensibility Advanced Features Reduced Overall Cost * Monolithic HLNAND 43
44 Resource for HLNAND Flash 44
Looking Ahead to Higher Performance SSDs with HLNAND
Looking Ahead to Higher Performance SSDs with HLNAND Roland Schuetz Director, Applications & Business Initiatives MOSAID Technologies Inc. Soogil Jeong Vice President, Engineering INDILINX Infrastructure
HLNAND: A New Standard for High Performance Flash Memory
HLNAND: A New Standard for High Performance Flash Memory Peter Gillingham MOSAID Technologies Inc. gillingham@mosaid.com August 2008 1 Objectives Address performance and density requirements of Solid State
Technical Note. ONFI 4.0 Design Guide. Introduction. TN-29-83: ONFI 4.0 Design Guide. Introduction
Introduction Technical Note ONFI 4.0 Design Guide Introduction The ONFI 4.0 specification enables high data rates of 667 MT/s and 800 MT/s. These high data rates, along with lower input/output capacitance,
Flash Technology: Mbps and Beyond
Flash Technology: 200-400Mbps and Beyond KeunSoo Jo Samsung Electronics Co. LTD Doug Wong Toshiba Sep. 29 th, 2010 Hsinchu Oct. 1 st, 2010 Seoul Oct. 4 th, 2010 San Jose Table of Agenda NAND Flash Primer
An Introduction. (for Military Storage Application) Redefining Flash Storage
An Introduction (for Military Storage Application) Redefining Flash Storage August 2014 The Opportunity One of very few independent SSD controller chip companies 6+ years of R&D and $30M invested to create
High-Speed NAND Flash
High-Speed NAND Flash Design Considerations to Maximize Performance Presented by: Robert Pierce Sr. Director, NAND Flash Denali Software, Inc. History of NAND Bandwidth Trend MB/s 20 60 80 100 200 The
DI-SSD: Desymmetrized Interconnection Architecture and Dynamic Timing Calibration for Solid-State Drives
DI-SSD: Desymmetrized Interconnection Architecture and Dynamic Timing Calibration for Solid-State Drives Ren-Shuo Liu and Jian-Hao Huang System and Storage Design Lab Department of Electrical Engineering
Flash Standards for Embedded Systems
Flash Standards for Embedded Systems Michael Abraham (mabraham@micron.com) Applications Engineering Manager Micron Technology, Inc. August 2008 1 Abstract OEMs are demanding that Flash-based interfaces
NAND Flash Module 69F64G16 69F128G16 69F256G16 FEATURES: Preliminary
Preliminary NAND Flash Module 69F64G16 69F128G16 69F256G16 FEATURES: NAND Flash Interface Single Level Cell (SLC) Technology ONFI 2.2 Compliant Operating Voltage VCC 3.0-3.6V VCCQ 1.7-1.95V or 3.0-3.6V
How Good Is Your Memory? An Architect s Look Inside SSDs
How Good Is Your Memory? An Architect s Look Inside SSDs Michael Abraham (mabraham@micron.com) Business Line Manager Micron Technology, Inc. August 2015 1 Early Storage Optimizations µc NAND Camera SmartMedia
Five Key Steps to High-Speed NAND Flash Performance and Reliability
Five Key Steps to High-Speed Flash Performance and Reliability Presenter Bob Pierce Flash Memory Summit 2010 Santa Clara, CA 1 NVM Performance Trend ONFi 2 PCM Toggle ONFi 2 DDR SLC Toggle Performance
SDRAM DDR3 256MX8 ½ Density Device Technical Note
SDRAM DDR3 256MX8 ½ Density Device Technical Note Introduction This technical note provides an overview of how the SGG128M8V79DG8GQF-15E DDR3 SDRAM device is configured and tested as a 1Gb device. This
Memory Device Evolution
Memory Device Evolution Cassino May 2008 Maurizio Di Zenzo Applications Lab Mgr Agenda Random access memories A quick comparison of technologies Details of external memory technologies Solutions for low
Achieving UFS Host Throughput For System Performance
Achieving UFS Host Throughput For System Performance Yifei-Liu CAE Manager, Synopsys Mobile Forum 2013 Copyright 2013 Synopsys Agenda UFS Throughput Considerations to Meet Performance Objectives UFS Host
Features. DDR2 UDIMM with ECC Product Specification. Rev. 1.2 Aug. 2011
Features 240pin, unbuffered dual in-line memory module (UDIMM) Error Check Correction (ECC) Support Fast data transfer rates: PC2-4200, PC3-5300, PC3-6400 Single or Dual rank 512MB (64Meg x 72), 1GB(128
Optimizing Your Memory Sub-System
Optimizing Your Memory Sub-System AKA Choosing the right memories Design with Freescale Toronto Jim Cooke Ecosystems Enablement JCooke@micron.com Les Marentette FAE Manager LMarentette@tech-trek.com November
Technical Note. GDDR5X: The Next-Generation Graphics DRAM. Introduction. TN-ED-02: GDDR5X: The Next-Generation Graphics DRAM.
Technical Note TN-ED-02: GDDR5X: The Next-Generation Graphics DRAM Introduction GDDR5X: The Next-Generation Graphics DRAM Introduction Since its market introduction in 2008, GDDR5 SGRAM has been the choice
IoT, Wearable, Networking and Automotive Markets Driving External Memory Innovation Jim Cooke, Sr. Ecosystem Enabling Manager, Embedded Business Unit
IoT, Wearable, Networking and Automotive Markets Driving External Memory Innovation Jim Cooke, Sr. Ecosystem Enabling Manager, Embedded Business Unit JCooke@Micron.com 2016Micron Technology, Inc. All rights
Memory Requirement for Server Application
Server Memory Trends (Past and Future) Server Memory Forum 2011 Memory Requirement for Server Application High End -DB server HPC/ MC In-Memory System TeraByte System Large Capacity Mid End - Application
NAND Interleaving & Performance
NAND Interleaving & Performance What You Need to Know Presented by: Keith Garvin Product Architect, Datalight August 2008 1 Overview What is interleaving, why do it? Bus Level Interleaving Interleaving
Features. DDR2 UDIMM w/o ECC Product Specification. Rev. 1.1 Aug. 2011
Features 240pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC2-4200, PC3-5300, PC3-6400 Single or Dual rank 512MB (64Meg x 64), 1GB(128 Meg x 64), 2GB (256 Meg x 64) JEDEC
Innovations in Non-Volatile Memory 3D NAND and its Implications May 2016 Rob Peglar, VP Advanced Storage,
Innovations in Non-Volatile Memory 3D NAND and its Implications May 2016 Rob Peglar, VP Advanced Storage, Micron @peglarr 2015 Micron Technology, Inc All rights reserved Products are warranted only to
The Memory Hierarchy 1
The Memory Hierarchy 1 What is a cache? 2 What problem do caches solve? 3 Memory CPU Abstraction: Big array of bytes Memory memory 4 Performance vs 1980 Processor vs Memory Performance Memory is very slow
NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP )
NND Flash and Mobile LPDRM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMP ) MT29CxGxxMxxxxx Preliminary Features Features Micron NND Flash and LPDRM components RoHS-compliant, green package
Organization Row Address Column Address Bank Address Auto Precharge 128Mx8 (1GB) based module A0-A13 A0-A9 BA0-BA2 A10
GENERAL DESCRIPTION The Gigaram is ECC Registered Dual-Die DIMM with 1.25inch (30.00mm) height based on DDR2 technology. DIMMs are available as ECC modules in 256Mx72 (2GByte) organization and density,
Interfacing FPGAs with High Speed Memory Devices
Interfacing FPGAs with High Speed Memory Devices 2002 Agenda Memory Requirements Memory System Bandwidth Do I Need External Memory? Altera External Memory Interface Support Memory Interface Challenges
Silicon Media Limited. C4 2.5 SATA Solid State Drive Specification (7mm & 9mm height compatible) SMSS325MxxxG-C4-x
Silicon Media Limited C4 2.5 SATA Specification (7mm & 9mm height compatible) SMSS325MxxxG-C4-x Version 1.2 Document Number: S-12157 ALL RIGHTS ARE STRICTLY RESERVED. ANY PORTION OF THIS PAPER SHALL NOT
Selecting a Flash Memory Solution for Embedded Applications
NOR NAND Flash Guide Selecting a Flash Memory Solution for Embedded Applications When looking for flash memory for your embedded applications, Micron has the right solution: Our many years of embedded
2. Link and Memory Architectures and Technologies
2. Link and Memory Architectures and Technologies 2.1 Links, Thruput/Buffering, Multi-Access Ovrhds 2.2 Memories: On-chip / Off-chip SRAM, DRAM 2.A Appendix: Elastic Buffers for Cross-Clock Commun. Manolis
MIRA M2320 series Halfslim SSD Specification. v0.1
1 MIRA M2320 series Halfslim SSD Specification v0.1 2 Revision History Date Version Changes compared to previous issue Jun 1 nd, 2012 0.1 - Initial Release 3 Table of Contents Introduction:... 4 Main Feature:...
MT51J256M32 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks. Options 1. Note:
GDDR SGRM 8Gb: x6, x GDDR SGRM Features MTJ6M 6 Meg x I/O x 6 banks, Meg x 6 I/O x 6 banks Features = =.V ±% and.v ±% Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s 6 internal banks Four bank groups for t CCDL
3D NAND Technology Scaling helps accelerate AI growth
3D NAND Technology Scaling helps accelerate AI growth Jung Yoon, Ranjana Godse IBM Supply Chain Engineering Andrew Walls IBM Flash Systems August 2018 1 Agenda 3D-NAND Scaling & AI Flash density trend
Flash Controller Solutions in Programmable Technology
Flash Controller Solutions in Programmable Technology David McIntyre Senior Business Unit Manager Computer and Storage Business Unit Altera Corp. dmcintyr@altera.com Flash Memory Summit 2012 Santa Clara,
What is an Synchronous SRAM?
Synchronous y SRAMs What is an Synchronous SRAM? Address Control Reg Async SRAM Data In/Out Clock 15 Register A Register is an element which is capable of storing binary data. A clock is a stream of positive
3SE4 Series. Customer Approver. Innodisk Approver. Customer: Customer Part Number: Innodisk Part Number: Innodisk Model Name: Date:
3SE4 Series Customer: Customer Part Number: Innodisk Part Number: Innodisk Model Name: Date: Innodisk Approver Customer Approver Table of contents msata 3SE4 LIST OF FIGURES... 6 1. PRODUCT OVERVIEW...
Product Brief LPDDR2-PCM and Mobile LPDDR2 121-Ball MCP
Features Product Brief LPDDR2-PCM and Mobile LPDDR2 121-Ball MCP MT66R7072A10AB5ZZW.ZCA, MT66R7072A10ACUXZW.ZCA MT66R5072A10ACUXZW.ZFA Features Micron LPDDR2-PCM and LPDDR2 components RoHS-compliant, green
8. Migrating Stratix II Device Resources to HardCopy II Devices
8. Migrating Stratix II Device Resources to HardCopy II Devices H51024-1.3 Introduction Altera HardCopy II devices and Stratix II devices are both manufactured on a 1.2-V, 90-nm process technology and
Technical Note Designing for High-Density DDR2 Memory
Technical Note Designing for High-Density DDR2 Memory TN-47-16: Designing for High-Density DDR2 Memory Introduction Introduction DDR2 memory supports an extensive assortment of options for the system-level
power supply Tamper Detect function will detect possible data modification from outside magnetic
FEATURES High bandwidth Read and Write at 52MB/sec Quad I/O with the use of dual purpose pins to maintain a low pin count Operates in both standard, single SPI mode and high speed quad SPI mode Fast quad
Enabling success from the center of technology. Interfacing FPGAs to Memory
Interfacing FPGAs to Memory Goals 2 Understand the FPGA/memory interface Available memory technologies Available memory interface IP & tools from Xilinx Compare Performance Cost Resources Demonstrate a
Maximizing heterogeneous system performance with ARM interconnect and CCIX
Maximizing heterogeneous system performance with ARM interconnect and CCIX Neil Parris, Director of product marketing Systems and software group, ARM Teratec June 2017 Intelligent flexible cloud to enable
TITLE. on SSD Boards. Image. Topic: Topic: Seong-Jin Mun, (Samsung Electronics Inc.)
TITLE Topic: Far-Field o Nam elementum EMI commodo Analysis mattis. Pellentesque Methodology and Verification on SSD Boards Topic: o malesuada blandit euismod. Seong-Jin Mun, (Samsung Electronics Inc.)
Parallel NOR and PSRAM 56-Ball MCP Combination Memory
Parallel NOR and PSRAM 56-Ball MCP Combination Memory MT38L3031AA03JVZZI.X7A 56-Ball MCP: 128Mb Parallel NOR and 64Mb PSRAM Features Features Micron Parallel NOR Flash and PSRAM components RoHS-compliant,
Key Features 240-pin, dual in-line memory module (DIMM) ECC 1-bit error detection and correction. Registered inputs with one-clock delay.
C M 7 2 D D 1 0 2 4 R- X X X Key Features 240-pin, dual in-line memory module (DIMM) Ultra high density using 512 MBit SDRAM devices ECC 1-bit error detection and correction Registered inputs with one-clock
RML1531MH48D8F-667A. Ver1.0/Oct,05 1/8
DESCRIPTION The Ramaxel RML1531MH48D8F memory module family are low profile Unbuffered DIMM modules with 30.48mm height based DDR2 technology. DIMMs are available as ECC (x72) modules. The module family
2GB DDR3 SDRAM 72bit SO-DIMM
2GB 72bit SO-DIMM Speed Max CAS Component Number of Part Number Bandwidth Density Organization Grade Frequency Latency Composition Rank 78.A2GCF.AF10C 10.6GB/sec 1333Mbps 666MHz CL9 2GB 256Mx72 256Mx8
Technical Note DDR2 (Point-to-Point) Package Sizes and Layout Basics
Introduction Technical Note DDR2 (Point-to-Point) Package Sizes and Layout Basics Introduction Point-to-point designers face many challenges when laying out a new printed circuit board (PCB). The designer
SLC NAND FLASH and LPDDR2 162-Ball MCP (Multi-Chip Package)
SLC NND FLSH and LPDDR2 162-Ball MCP (Multi-Chip Package) Key Features NND Flash Features: Low Power Dissipation High Reliability 1 Contents 1. MCP FETURES...3 2. BLOCK DIGRM...4 3. PRT NME DESCRIPTION...5
8. Selectable I/O Standards in Arria GX Devices
8. Selectable I/O Standards in Arria GX Devices AGX52008-1.2 Introduction This chapter provides guidelines for using industry I/O standards in Arria GX devices, including: I/O features I/O standards External
The Long-Term Future of Solid State Storage Jim Handy Objective Analysis
The Long-Term Future of Solid State Storage Jim Handy Objective Analysis Agenda How did we get here? Why it s suboptimal How we move ahead Why now? DRAM speed scaling Changing role of NVM in computing
SDRAM DDR3 512MX8 ½ Density Device Technical Note
SDRAM DDR3 512MX8 ½ Density Device Technical Note Introduction This technical note provides an overview of how the PRN256M8V90BG8RGF-125 DDR3 SDRAM device operates and is configured as a 2Gb device. Addressing
Designing with External Flash Memory on Renesas Platforms
Designing with External Flash Memory on Renesas Platforms Douglas Crane, Segment Manager Micron Technology Class ID: CL23A Renesas Electronics America Inc. Douglas Crane Doug is a 27 year veteran in the
Features. DDR3 UDIMM w/o ECC Product Specification. Rev. 14 Dec. 2011
Features DDR3 functionality and operations supported as defined in the component data sheet 240pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC3-8500, PC3-10600, PC3-12800
LE4ASS21PEH 16GB Unbuffered 2048Mx64 DDR4 SO-DIMM 1.2V Up to PC CL
LE4ASS21PEH 16GB Unbuffered 2048Mx64 DDR4 SO-DIMM 1.2V Up to PC4-2133 CL 15-15-15 General Description This Legacy device is a JEDEC standard unbuffered SO-DIMM module, based on CMOS DDR4 SDRAM technology,
SSD Update Samsung Memory. August 2016 Samsung Memory NAND Marketing
SSD Update Samsung Memory August 2016 Samsung Memory NAND Marketing Contents 1. Market Overview 2. SSD Product Roadmap 3. New SSD Features 2 Contents 1. Market Overview 2. SSD Product Roadmap 3. New SSD
Technical Note. Maximize SPI Flash Memory Design Flexibility With a Single Package. Introduction
Technical Note Maximize SPI Flash Memory Design Flexibility With a Single Package TN-25-08: Maximize SPI Flash Memory Design Flexibility Introduction Introduction This technical note discusses how a single
USB 3.0 Pen Drive Marketing Trend
USB 3.0 Pen Drive Marketing Trend Innostor Technology Corp. 2012 / 0809 Agenda TLC ready for USB-3.0 Market USB-3.0 COB Readiness Market Segment from Performance vs. Cost WTG ( Windows To Go ) vs. NAND
Customer: Customer. Part Number: Innodisk. Part Number: Innodisk. Model Name: Date: Customer. Innodisk. Approver. Approver
Customer: Customer Part Number: Innodisk Part Number: Innodisk Model Name: Date: Innodisk Approver Customer Approver Table of contents TABLE OF CONTENTS... 2 LIST OF FIGURES... 4 LIST OF TABLES... 5 1.
NVMe Made Affordable. Toshiba OCZ RC100 Series. Vector 180 Series Product Brief. NVMe Solid State Drive (SSD) May 2018
Toshiba OCZ RC100 Series NVMe Solid State Drive (SSD) NVMe Made Affordable May 2018 Product Brief Toshiba OCZ RC100 Series V 1.1 2018 TOSHIBA MEMORY AMERICA, INC. All rights reserved. 1 Overview Want to
Datasheet. Zetta 4Gbit DDR3L SDRAM. Features VDD=VDDQ=1.35V / V. Fully differential clock inputs (CK, CK ) operation
Zetta Datasheet Features VDD=VDDQ=1.35V + 0.100 / - 0.067V Fully differential clock inputs (CK, CK ) operation Differential Data Strobe (DQS, DQS ) On chip DLL align DQ, DQS and DQS transition with CK
IMM128M72D1SOD8AG (Die Revision F) 1GByte (128M x 72 Bit)
Product Specification Rev. 1.0 2015 IMM128M72D1SOD8AG (Die Revision F) 1GByte (128M x 72 Bit) 1GB DDR Unbuffered SO-DIMM RoHS Compliant Product Product Specification 1.0 1 IMM128M72D1SOD8AG Version: Rev.
DDR System Simulation: What Issue to Simulate
DDR System Simulation: What Issue to Simulate Asian IBIS Summit Tokyo, Japan November 17, 2017 Shinichi Maeda 1 JEDEC DDR Specifications DDR DDR2 DDR3 DDR3L DDR3U DDR4 Vdd 2.5 1.8 1.5 1.35 1.25 1.2(IO)
Breakthrough Insight into DDR4/LPDDR4 Memory Greater Than 2400 Mb/s
Breakthrough Insight into DDR4/LPDDR4 Memory Greater Than 2400 Mb/s January 2015 Jennie Grosslight Product Manager Agenda Overview Benefits and challenges for DDR4 and LPDDR4 >2400Mb/s Breakthrough Insight
Utilizing Ultra-Low Latency Within Enterprise Architectures
Utilizing Ultra-Low Latency Within Enterprise Architectures Page Tagizad, Product Marketing - Enterprise Storage Solution April 22, 2014 Forward-Looking Statements During our meeting today we will make
IMM128M64D1DVD8AG (Die Revision F) 1GByte (128M x 64 Bit)
Product Specification Rev. 1.0 2015 IMM128M64D1DVD8AG (Die Revision F) 1GByte (128M x 64 Bit) 1GB DDR VLP Unbuffered DIMM RoHS Compliant Product Product Specification 1.0 1 IMM128M64D1DVD8AG Version: Rev.
BGA SSD with EMI Shielding
BGA SSD with EMI Shielding Jong-ok Chun Senior Managing Director Sun System Co.,Ltd www.sunsystem.kr rfjob@sunsysm.com, OCT-2017 Trend of SSD Form-Factor Form Factor - 2.5 Inch - Slim SATA 100x70mm 54x39mm
High Capacity and High Performance 20nm FPGAs. Steve Young, Dinesh Gaitonde August Copyright 2014 Xilinx
High Capacity and High Performance 20nm FPGAs Steve Young, Dinesh Gaitonde August 2014 Not a Complete Product Overview Page 2 Outline Page 3 Petabytes per month Increasing Bandwidth Global IP Traffic Growth
Guardian Technology Platform Webcast
John Scaramuzzo Guardian Technology Platform Webcast Senior Vice President & General Manager, Enterprise Storage Solutions December 12, 2013 1 Forward-Looking Statements During our meeting today we may
Computer Memory. Textbook: Chapter 1
Computer Memory Textbook: Chapter 1 ARM Cortex-M4 User Guide (Section 2.2 Memory Model) STM32F4xx Technical Reference Manual: Chapter 2 Memory and Bus Architecture Chapter 3 Flash Memory Chapter 36 Flexible
Organization Row Address Column Address Bank Address Auto Precharge 256Mx4 (1GB) based module A0-A13 A0-A9 BA0-BA2 A10
GENERAL DESCRIPTION The Gigaram GR2DR4BD-E4GBXXXVLP is a 512M bit x 72 DDDR2 SDRAM high density ECC REGISTERED DIMM. The GR2DR4BD-E4GBXXXVLP consists of eighteen CMOS 512M x 4 STACKED DDR2 SDRAMs for 4GB
SDRAM DDR3 512MX8 ½ Density Device Technical Note
SDRAM DDR3 512MX8 ½ Density Device Technical Note Introduction This technical note provides an overview of how the XAA512M8V90BG8RGF-SSWO and SSW1 DDR3 SDRAM device is configured and tested as a 2Gb device.
ONFI 2.0 The Compatible NAND Flash Interface
ONFI 2.0 The Compatible NAND Flash Interface Michael Abraham (mabraham@micron.com) Applications Engineering Manager Micron Technology, Inc. August 2008 1 Abstract ONFI 1.0 standardized the asynchronous
512Mb NAND FLASH + 256Mb LPDDR SDRAM MCP Product
Multi-Chip Package MEMORY 512M bit(1.8v,32m x 16) 256M bit(1.8v,16m x 16) SLC NAND Flash LPDDR(Mobile DDR) SDRAM Revision No. History Draft Date Remark 00 Initial Draft Nov. 2012 1 Multi-Chip Package MEMORY
Advancing high performance heterogeneous integration through die stacking
Advancing high performance heterogeneous integration through die stacking Suresh Ramalingam Senior Director, Advanced Packaging European 3D TSV Summit Jan 22 23, 2013 The First Wave of 3D ICs Perfecting
Why Next-Generation NAND Flash Requires a Dedicated Test Solution
1 Why Next-Generation NAND Flash Requires a Dedicated Test Solution By Ken Hanh Lai, Advantest America, Inc., Product Marketing Manager Introduction During the next four years, the NAND Flash market will
3MG2-P Series. Customer Approver. Approver. Customer: Customer Part Number: Innodisk Part Number: Model Name: Date:
3MG2-P Series Customer: Customer Part Number: Innodisk Part Number: Innodisk Model Name: Date: Innodisk Approver Customer Approver Table of Contents 1.8 SATA SSD 3MG2-P LIST OF FIGURES... 6 1. PRODUCT
DDR Testing:Compliance,Verify and Debug( 一 )
DDR Testing:Compliance,Verify and Debug( 一 ) Double data-rate (DDR) memory has ruled the roost as the main system memory in PCs for a long time. Of late, it's seeing more usage in embedded systems as well.
MLC MICRO SATA III FLASH MODULE
MLC MICRO SATA III FLASH MODULE HERMES-J Series Product Specification MLC MICRO SATA III FLASH MODULE Version 01V1 Document No. 100-xBMSF-JJCTMB Feb. 2017 APRO CO., LTD. Phone: +88628226-1539 Fax: +88628226-1389
Optimize your system designs using Flash memory
Optimize your system designs using Flash memory Howard Cheng Sr. Segment Applications Manager Embedded Solutions Group, Micron 2012 Micron Technology, Inc. All rights reserved. Products are warranted only
Jim Cooke NAND Marketing Micron Technology, Inc.
An Update Jim Cooke NAND Marketing Micron Technology, Inc. Outline ONFi Overview ONFi Provides Speed Enhancements The Path to Higher Performance August 2009 2 Why ONFi? NAND was the only commodity memory
1024MB DDR2 SDRAM SO-DIMM
1024MB DDR2 SDRAM SO-DIMM 1024MB DDR2 SDRAM SO-DIMM based on 128Mx8,8Banks, 1.8V DDR2 SDRAM with SPD Features Performance range ( Bandwidth: 6.4 GB/sec ) Part Number Max Freq. (Clock) Speed Grade 78.02G86.XX2
3ME2 Series. Customer Approver. Innodisk Approver. Customer: Customer Part Number: Innodisk Part Number: Innodisk Model Name: Date:
3ME2 Series Customer: Customer Part Number: Innodisk Part Number: Innodisk Model Name: Date: Innodisk Approver Customer Approver Table of contents LIST OF FIGURES... 6 1. PRODUCT OVERVIEW... 7 1.1 INTRODUCTION
2.5-Inch SATA SSD PSSDS27Txxx6
DMS Celerity 2.5 SSD Datasheet 2.5-Inch SATA SSD PSSDS27Txxx6 Features: SATA 3.1 Compliant, SATA 6.0Gb/s with 3Gb/s and 1.5Gb/s support ATA modes supported PIO modes 3 and 4 Multiword DMA modes 0, 1, 2
MINERVA. Performance & Burn In Test Rev AD912A Interposer Card. Table of Contents. 1. Overview
MINERVA AD912A Interposer Card Performance & Burn In Test Rev. 1.0 Table of Contents 1. Overview 2. Performance Measurement Tools and Results 2.1 Test Platform 2.2 Test target and Used msata III SSD 2.3
TwinDie 1.35V DDR3L SDRAM
TwinDie 1.35R3L SDRAM MT41K4G4 256 Meg x 4 x 8 Banks x 2 Ranks MT41K2G8 128 Meg x 8 x 8 Banks x 2 Ranks 16Gb: x4, x8 TwinDie DDR3L SDRAM Description Description The 16Gb (TwinDie ) DDR3L SDRAM (1.35V)
Mobile Link Memory: Daisy-chain Memory with Variable-latency Control Mode for Future Mobile Systems
Mobile Link Memory: Daisy-chain Memory with Variable-latency Control Mode for Future Mobile Systems Seiji Miura Central Research Laboratory Hitachi, Ltd. 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601,
Solving the I/O bottleneck with Flash
Solving the I/O bottleneck with Flash Ori Balaban Director of Sales for Global Accounts SanDisk Corporation August 2007 1 Agenda Performance bottlenecks in HDD Alternative solutions SSD value proposition
3ME3 Series. Customer Approver. InnoDisk Approver. Customer: Customer Part Number: InnoDisk Part Number: InnoDisk Model Name: Date:
3ME3 Series Customer: Customer Part Number: InnoDisk Part Number: InnoDisk Model Name: Date: InnoDisk Approver Customer Approver Table of contents SATADOM-SH 3ME3 LIST OF FIGURES... 6 1. PRODUCT OVERVIEW...
Structure of Computer Systems. advantage of low latency, read and write operations with auto-precharge are recommended.
148 advantage of low latency, read and write operations with auto-precharge are recommended. The MB81E161622 chip is targeted for small-scale systems. For that reason, the output buffer capacity has been
3ME4 Series. Customer Approver. Innodisk Approver. Customer: Customer Part Number: Innodisk Part Number: Innodisk Model Name: Date:
3ME4 Series Customer: Customer Part Number: Innodisk Part Number: Innodisk Model Name: Date: Innodisk Approver Customer Approver Table of contents msata mini 3ME4 LIST OF FIGURES... 6 1. PRODUCT OVERVIEW...
Flash Storage Trends & Ecosystem
Flash Storage Trends & Ecosystem Hung Vuong Qualcomm Inc. Introduction Trends Agenda Wireless Industry Trends Memory & Storage Trends Opportunities Summary Cellular Products Group (CPG) Wireless Handsets
HEAT (Hardware enabled Algorithmic tester) for 2.5D HBM Solution
HEAT (Hardware enabled Algorithmic tester) for 2.5D HBM Solution Kunal Varshney, Open-Silicon Ganesh Venkatkrishnan, Open-Silicon Pankaj Prajapati, Open-Silicon May 9, 9, 2016 1 Agenda High Bandwidth Memory
4GB Unbuffered VLP DDR3 SDRAM DIMM with SPD
4GB Unbuffered VLP DDR3 SDRAM DIMM with SPD Ordering Information Part Number Bandwidth Speed Grade Max Frequency CAS Latency Density Organization Component Composition 78.B1GE3.AFF0C 12.8GB/sec 1600Mbps
1.35V DDR3L SDRAM UDIMM
1.35V DDR3L SDRAM UDIMM MT4KTF25664AZ 2GB 2GB (x64, SR) 240-Pin DDR3L UDIMM Features Features DDR3L functionality and operations supported as defined in the component data sheet 240-pin, unbuffered dual
Features. DDR3 Registered DIMM Spec Sheet
Features DDR3 functionality and operations supported as defined in the component data sheet 240-pin, Registered Dual In-line Memory Module (RDIMM) Fast data transfer rates: PC3-8500, PC3-10600, PC3-12800
512 Mbit (64 Mbyte), 3.0 V SPI Flash Memory
512 Mbit (64 Mbyte), 3.0 V SPI Flash Memory Features CMOS 3.0 Volt Core with versatile I/O Serial Peripheral Interface (SPI) with Multi-I/O Density 512 Mbits (64 Mbytes) SPI SPI Clock polarity and phase
FLASH RELIABILITY, BEYOND DATA MANAGEMENT AND ECC. Hooman Parizi, PHD Proton Digital Systems Aug 15, 2013
FLASH RELIABILITY, BEYOND DATA MANAGEMENT AND ECC Hooman Parizi, PHD Proton Digital Systems Aug 15, 2013 AGENDA Section 1: Flash Reliability Section 2: Components to Improve Flash Reliability Section 3:
Can Embedded Applications Utilize the Latest Flash Storage Technologies?
Can Embedded Applications Utilize the Latest Flash Storage Technologies? Grady Lambert Sr. Director, Embedded Engineering Swissbit Santa Clara, CA 1 Agenda Storage Tech Headlines! Embedded Applications
3ME2 Series. Customer Approver. Innodisk Approver. Customer: Customer Part Number: Innodisk Part Number: Innodisk Model Name: Date:
3ME2 Series Customer: Customer Part Number: Innodisk Part Number: Innodisk Model Name: Date: Innodisk Approver Customer Approver Table of contents 2.5 SATA SSD 3ME2 LIST OF FIGURES... 6 1. PRODUCT OVERVIEW...
Architecture for Carbon Nanotube Based Memory (NRAM)
Architecture for Carbon Nanotube Based Memory () Bill Gervasi Principal Systems Architect 18 August 2018 Agenda 2 Carbon nanotube basics Making & breaking connections Resistive measurements Write endurance,