CitrusCom. CS Low Capacitance ESD/Surge Protection for Gigabit Ethernet Interfaces. Features. Applications. Mechanical Characteristics

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1 Features Applications Transient protection for high-speed data lines IEC (ESD) ±30kV (Air) ±30kV (Contact) IEC (EFT) 40A (5/50 ns) IEC (Surge) 40A (8/20μs) Package optimized for high-speed lines Provides protection for two line pairs Low capacitance: 0V (Typical) Low leakage current: V RWM (Typical) Low operating and clamping voltage Each I/O pin can withstand over 1000 ESD strikes for ±8kV contact discharge Description is a low-capacitance Transient Voltage Suppressor (TVS) array designed to provide electrostatic discharge (ESD) protection for high-speed data interfaces. With typical capacitance of 3.8pF only, is designed to protect parasitic-sensitive systems against over-voltage and over-current transient events. It complies with IEC (ESD) (±30kV air, ±30kV contact discharge), IEC (electrical fast transient - EFT) (40A, 5/50 ns), IEC (Surge) (40A, 8/20μs), very fast charged device model (CDM) ESD and cable discharge event (CDE), etc. 10/100/1000M Ethernet Ports WAN/LAN Equipment Desktops, Servers and Notebooks Cellular Phones Switching Systems Audio/Video Inputs Mechanical Characteristics DFN L package Flammability Rating: UL 94V-0 Marking: Part number, Date Packaging: Tape and Reel Circuit Diagram LINE1_IN LINE1_OUT LINE2_IN LINE2_OUT LINE3_IN LINE3_OUT LINE4_IN LINE4_OUT Pin Configuration is in a DFN L package. Each device can protect two high-speed line pairs. The flow-thru design minimizes trace inductance and reduces voltage overshoot associated with ESD events. The combined features of low capacitance and high ESD robustness make ideal for high-speed data port and high-frequency line (e.g., Gigabit Ethernet Ports) applications. The low clamping voltage of the guarantees a minimum stress on the protected IC. LINE1_OUT LINE2_OUT LINE3_OUT LINE4_OUT LINE1_IN LINE2_IN LINE3_IN LINE4_IN DFN L (Top View) Revision B 03/30/

2 Absolute Maximum Rating Symbol Parameter Value Units I PP Peak Pulse Current (8/20μs) 40 A P PK Peak Pulse Power (8/20μs) 1000 Watts V ESD ESD per IEC (Air) ±30 kv ESD per IEC (Contact) ±30 T OPT Operating Temperature -55 to +125 C T STG Storage Temperature -55 to +150 C Electrical Characteristics (T = 25 C) Symbol V RWM I R V t1 Parameter Nominal Reverse Working Voltage Reverse Leakage V RWM Trigger Voltage I PP I h I I t1 V h I h I PP C ESD Trigger V t1 Holding Voltage Holding V h Clamping I PP Maximum Peak Pulse Current Parasitic Capacitance I t1 V V F I R I V RWM Vh V t1 F Uni-Directional TVS Symbol Test Condition Minimum Typical Maximum Units V RWM 2.5 V I R V RWM = 2.5V, T = 25 C μa V t1 I t1 = 1μA V V h I h = 1mA V C ESD C ESD Any I/O to Ground I PP = 1A, t p = 8/20μs Any I/O to Ground I PP = 10A, t p = 8/20μs Any I/O to Ground I PP = 25A, t p = 8/20μs Line-to-Line / Line-to-, two I/O Pins connected together on each line I PP = 40A, t p = 8/20μs Between I/O Pins and Ground V R = 0V, f = 1MHz Between I/O Pins V R = 0V, f = 1MHz 4.5 V 7.5 V 12.0 V 2 V pf pf Revision B 03/30/

3 Clamping Voltage (V). Clamping Voltage (V). Insertion Loss(dB) Normalized Capacitance CitrusCom Clamping Voltage vs. Current I PP Any I/O to Clamping Voltage vs. Current I PP Line-to-Line, Two I/O Pins Connected Together Clamping Voltage(V) Clamping Voltage(V) Peak Pulse Current(A) Peak Pulse Current(A) Insertion Loss S21 Normalized Capacitance vs. Voltage E E E E E+10 Frequency (Hz) Reverse Voltage (V) ESD Clamping of I/O to (+8kontact per IEC ) ESD Clamping of I/O to (-8kontact per IEC ) Time (ns) Time (ns) Revision B 03/30/

4 Application Information Electronic equipment is susceptible to damage caused by a variety of sources, including Electrostatic Discharge (ESD), Electrical Fast Transients (EFT) and Lightning strikes. The was designed to protect the sensitive equipment from damage which may be induced by such transient events. This product can be configured in different connections to meet the requirement of common-mode and differential-mode as follows: Gigabit Ethernet Protection TPOPA TPONA TPOPB TPONB TPOPC TPONC TPOPD TPOND R1 R2 R3 R C1 C2 C3 C4 Quad Transformer C5 C6 C7 C8 RJ45 Schematic Diagram for Gigabit Ethernet ESD/Surge Protection using NOTE: Please connect pin3, Pin8 and all Tabs of to the ground plane of the systems. Revision B 03/30/

5 Package Outline DFN L package D b1 L E L1 PIN1 INDICATOR e e1 b e2 A A3 A1 Package Dimensions (Controlling dimensions are in millimeters) Symbol Dimensions (mm) Dimensions (Inches) Minimum Typical Maximum Minimum Typical Maximum A A A REF 06 REF b b D E e BSC 24 BSC e BSC 26 BSC e BSC 37 L L Revision B 03/30/

6 Tape and Reel Specification T P0 P2 Φ: 1.55±5 Device Orientation in Tape Top Cover Tape W A0 E F 5 Max B0 K0 P Φ: 1.0±0.1 Pin1 Location Symbol W A0 B0 K0 E F P P0 P2 T Dimensions (mm) ± ± ± ± ±5 4.0± ± ± ±5 R W1 S M N K H W Symbol Reel Size M N W W1 H S K R Dimensions (mm) Φ ±1.0 6± ± ± ± ± ± ±5 Marking Codes YYWW Pin1 Identification Ordering Information Part Number Working Voltage Quantity Per Reel Reel Size 2.5V 3,000 7 Inch Note: (1) is the part number, fixed. (2) YYWW is date code. YY is year (2012 is 12 ); while WW is the assembly week in a year. Revision B 03/30/