HiPAC High Performance Actives & Passives on Chip

Transcription

1 HiPAC High Performance Actives & Passives on Chip

2 Passive Integration on Silicon Solutions & Target Components to be integrated Solutions Resistors Inductors Transformers Capacitors Diodes Transistors standard bipolar bipolar and and CMOS CMOS integrated circuits loss lossof of performance for for analog analog and and RF RF circuits HiPAC HiPAC--High High Performance passives and and Actives on on Chip Chip Target HiPAC: Integration of todays discretes without loss of performance

3 Integration of RF Diodes with Standard Bipolar Process 1pF 1KW 1KW 1pF 1KW 1pF 2,5W buried layer P-doped silicon f > 100 MHz: 5W Q = 10 in 50W circuits Limitations High series resistance of diode Additional parasitics Loss of RF performance

4 Integration of RF Diodes with Enhanced HiPAC Process 0,1pF 0,1pF f > 100MHz: 100kW 0,1pF 0,25W Sinker buried layer 0,5 W 100kW 100kWsemiinsulating silicon Q = 100 in 50W circuits Advanced technology issues semiinsulting silicon with much lower parasitics optimized buried layer technology with deep sinker providing very low series resistance No loss of RF performance in HiPAC technology

5 Integration of Capacitors with Enhanced HiPAC Process High Frequency medium value 0,1-200pF 10% Tolerance 6µ trench 120V Low Frequency Low frequency, high value nF 15% Tolerance 18µ trench 30V n+ n+ Semi Insulating Si substrate Silcaps =Silicon capacitor

6 Integration of Capacitors with Enhanced HiPAC Process High Frequency small value 0,1-10pF 5% Tolerance 60V, MIM ALD Caps =Metal InsulatorMetal =Atomic LayerDeposition

7 Integration of Resistors with Enhanced HiPAC Process Technologies in use Resistivity Tolerance Temperature dependance W/square % ppm/k Poly Si lightly doped % -400 Poly Si medium doped 440 5% ±100 Poly Si highly doped 90 5% 1200 TaN 20 10% ±50 Standard technologies tight difference tolerance <0,5% 5% Tolerance RS(T)/RS(25 C) C) 1,15 1,10 Rs(T)/Rs(25 1,05 1,00 p+ Poly n+ Poly p- Poly 0, Delta T

8 Integration of Resistors with Enhanced HiPAC Process Temperature compensated poly silicon resistors tight difference tolerance <0,5% 5% Tolerance Temperature Dependance 1,0200 1,0175 1,0150 1,25 % / 125 K = 100 ppm / K RS(T)/RS(25 C) 1,0125 1,0100 1,0075 1,0050 1, Ohm/Sq 420 Ohm/Sq 440 Ohm/Sq 460 Ohm/Sq 480 Ohm/Sq 1,0000 0,9975 0, T[ C]

9 ESD Sensitivity of Integrated Passives ESD pulse 15KV = 50ns 50A SilCap 1 nf / 100pF MIM Cap 10 / 1 pf Resistor 5 / 1000 Ohm Coil 5 / 50 nh Vmax 30 V / 120 V 30V 500 V 500 V Imax (50ns) 10 A 1 A / 0,1 A 6 A / 0,5A 30 A / 30 A Integrated passives are more sensitive to ESD damage than discrete passives In most applications they need protection

10 Improving ESD Hardness with Enhanced HiPAC Protection Devices Gnd + - V n+ n+ p Semi Insulating Si Substrate n p n or p n p ESD Double Diodes V~ = 5V / 14V Vclamp = 20V / 30V ESD Source IEC 64k, 15KV, 330W, 150pF Cj=10pF / 20 pf voltage dependent Protection of AF datalines and Vcc No Bias required

11 Improving ESD hardness with enhanced HiPAC protection devices ESD Protection Transistors V~ = 25V f>1mhz Vclamp = 75V p+ p+ n+ ESD Source IEC 64k 15KV, 330Ω, 150pF Semi Insulating Si Substrate n p n or p n p gnd Vcc Cj =2pF Protection of high speed datalines up to 1GHz IP3 >70dbm with 2.8V bias line

12 Improving ESD Hardness with Enhanced HiPAC Protection Devices ESD Protection PIN-Diode pair V~ = 25V f>10mhz Vclamp = 15V ESD Source IEC 64k 15KV, 330Ω, 150pF trench p+ transistor pin diode n+ buried layer sinker C line =0,2pF Semi Insulating Si Substrate Protection of high speed datalines up to 5GHz VCC gnd line IP3 >70dbm with 2.8V positive Bias

13 Improving ESD Hardness with Enhanced HiPAC Protection Devices PIN-Diodepaircombined with Double Diode line Gnd ESD Source IEC 64k 15KV, 330Ω, 150pF C line =0,2pF Protection of high speed datalines up to 2,5 GHz V CC IP3 >70dbm with 2.8V positive Bias

14 Summary of Technology Features low tolerance resistors, 20Ω -200kΩ ± 4 % tolerance, ± 1 % matching high capacitance area ratio, ~ 20fF / µm 2 C values up to 100nF, tolerance ± 10 % low leakage current < na inductors up to 100nH ± 2 % Q - values high current capabilities PIN -, Schottky -, Zenerdiodes transistors

15 Customer Benefits and Target Applications Target component count reduction improved overall quality level cost reductions board space reduction Applications low cost high performance filters ESD/EMI protection at reasonable costs passive networks providing cost and size optimization high performance switching devices balun functionality

16 HiPAC-Filters, Switches & ESD protection RF-Protection & Switches BGF220 Antenna ESD Protection BGF151, BGF152, BGF154 ESD Protection Arrays Cellular: TX/RX and Band Switch ESD Protection andaudiofilter BGF105 SIM Card Protection BGF104 High Speed MMC Filter BGF103 ESD Protection Zener FlipChip TSLP H3 Cellular GSM / PCN available now BGF100 Microphonefilter Headset BGH91B, BGH181B DC+ Harmonic TX Filter for SMARTI DC ES Ramp-Up BGF101 USB ESD Filter BGF102 Ear Line Filter BGF200 Microphonefilter cell. terminal BGH92M, BGH182M Harmonic TX filter for SMARTI DC & Balun

17 HiPAC for Cellular Phones Customers Nokia Nokia Motorola Motorola ICM ICM Sony-Ericsson Sony-Ericsson RF RF Applications H3 H3 Filter Filter Antenna Antenna ESD ESD AF AF Applications Microphone Microphone keypad keypad SIM SIM Interface Interface earphone earphone data data connector connector passive passive networks networks Quadband Transceiver TX1800/1900 TX850/900 RX900 RX1800 BGH181B BGH182M H 3 H 3 BGH91B BGH92M B B TX900 RX-filter protection against ESD Power Amplifier + Control- Circuit Antenna Switch Module filtering of unwanted RF-signals TX1800 Antenna ESD - Protection passive networks

18 HiPAC for PC & Peripherals Customers HP HP Dell Dell Intel Intel IBM IBM PCI slots Audio/Microphone Serial Parallel USB EMI / ESD-Protection EMI / ESD-Protection Power Control Applications USB USB IEEE1394 Firewire Serial Serial ATA ATA DVI DVI High-speed data data line line ESD ESD protection Southbridge IDE AGP Processor Northbridge Floppy Memory Slots

19 1,2,4 Channel ESD Protection Arrays BGF151 BGF152 BGF154 V(+) V(+) CH 4 V(+) CH 3 CH 1 CH 1 CH 2 V(-) V(-) CH 1 V(-) CH 2 Applications USB 2.0 IEEE 1394 Firewire DVI Serial ATA g. p. high speed data line Features up to ± 15 kv ESD protection low loading capacitance <1pF 1 channel BGF151 in SOT23 2 channel BGF152 in SOT channel BGF154 in SOT 363

20 BGF100 Microphone Filter 15KV ESD-protection and low pass filter circuit with ESD diodes, R s and C s Attenuation: - 6GHz GND1 GND2 GND3 1n 1n 1n Vin 50 2K 50 2K Vout 1n 1n 1n GND1 GND2 GND3

21 BGF100 Microphone Filter Attenuation 0 channel1-20 channel Frequency (GHz)

22 USB ESD Protection BGF101 Schematic Circuit and Device Specs: Low TK Resistors TCR<100 ppm/k ± 5% C line < 50 pf, target 40 pf Schottky Diode < na E3 E1 C3 C1 A3 A1 B2 D4 B4 D2, GND 15kV ESD Stability U BD =7V@1mA I L <100nA@3V 2 kv U BD =7V@1mA I L <100nA@3V

23 Ear Line Filter BGF102 Spec Request New type of S-WLP-11 package Problem 1. 4 x 5 nf need too much die area, even in P7MI Options (increased C-density) 2. Thus price would be 60% over BGF100!

24 ESD Protection Diodes BGF103 Performance Cline 10 pf ESD 15 kv Vbr min ±14 V Leakage current < V First samples feasible in March

25 High Speed MMC Interface Filter BGF104 NMP Spec NMP Concept: Common base configuration

26 H3 (SilCu) - Filter for Mobile Applications Band Band pass pass filter filtercircuit circuitwith with1kv ESD ESD protection zener zenerdiodes,, L L s and and C C s Targets replace replacelowend lowendsaw-filters higher higherinput inputpower powerlevels levelscompared to to SAWs SAWs (max. (max. 15dBm) replace replacesmd filter filterto to reduce reducesmd-partcount 0.2p VCC 13n 20n 2p 26n GND 0.8p

27 realised HiPAC products H3 Filter BGH91 Lay Out

28 Measurement Results of BGH91B - TX H3-Filter for GSM900 S21(-) differential mode S11(-) differential mode S22(-) differential mode TSLP-7-2 TSLP-7-1 3rd Harmonic 0.4 mm 1,3 mm 1.1 mm 2,0 mm 1.6 mm