Specification for release
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1 Description: TS Diode rray WE-TS Specification for release Features: B Schematic and Pin Configuration: ESD Protection for 2 high-speed I/O channels and DD Provide ESD protection for each channel to IEC (ESD) ±15k (air), ±8k (contact) IEC (EFT) (5/50ns) 20 (I/O), 40 (DD) IEC (Lightning) (8/20µs) Below 5 operating voltage: Ultra Low capacitance: 1.2pF typical DTUM / DTE : DD I/O Mechanical Characteristics: JEDEC Package Molding compound flamability rating: UL94-0 Packaging: Tape & Reel 1 2 GND I/O 1 C bsolute Maximum Ratings: Symbol Rating Unit Peak Pulse Current (tp = 8/20µs) Operating Supply oltage, DD to GND ESD per IEC (ir / Contact), I/O to GND DC oltage at any I/O Pin I PP DC ESD,IO ESD,DD Operating Temperature T Op -55 to +85 C Storage Temperature T Sto -20 to +0 C IO 1 / 12 ESD per IEC (ir / Contact), DD to GND 1 / 12 (GND -0,5) to (DD +0,5) k k D Electrical Characterisitcs: Properties Test Conditions alue alue alue Unit min typ max RWM Pin 4 to Pin 1 5 B I B =1m, Pin 4 to Pin 1.0 I R Pin5 =5, Pin 4 to Pin 1 5 µ F I F = 15m, Pin 1 to Pin v C I PP =5, tp=8/20µs, I/O to GND 8 9 v Cl,IO I TLP = 17, I/O to GND 12.5 v Cl,DD I TLP = 17, DD to GND 9.0 C IO Pin4 =5, Pin1 =0, IO =2.5, f=1mhz, I/O to GND pf C X Pin4 =5, Pin1 =0, IO =2.5 f=1mhz, between I/O pins pf PGE 1 OF 5
2 TS Diode rray WE-TS Specification for release DTUM / DTE : E Typical Characteristics: Peak Pulse Derating in % of PeakPulse Current in % Temp Ipp 1 Current oltage , , mbient Temperature T ( ) Power Derating Curve Clamping oltage [] Peak Pulse Current [] Waveform Parameters: tr= 8 µs td = 20µs I/O Clamping oltage vs. Peak Pulse Current Capacitance [pf] 1,8 1, 1,4 1,2 1,0 0,8 0, 0,4 0,2 U C C 1,8 T C C 0 1,42 0,8 25 1,2 0,8 0,5 1,28 0,77 1,5 1,23 0,7 1,4 2,5 1,21 0, ,38 0,75 1,2 3,5 1,21 0,74 4,5 1,24 0,73 5 DD = 1,43 5 GND = 0 0,75 f = 1MHz Capacitance [pf] 1, 1,0 0,8 0, 0,4 0,2 DD = 5 GND = 0 f = 1MHz oltage [] Temperature [ C] ariation of C IO vs. IO ariation of C IO vs. Temp. PGE 2 OF 5
3 E Typical Characteristic: TS Diode rray WE-TS DTUM / DTE : ,0 1,0 14,0 I/O to GND DD to GND U I/O to GND DD to GND 0,5 0,1 0,1 Pulse TLP Current [] 1 1 8,0,0 4,0 9 0,1 0,1 9,5 0,1 0,1 I/O start,9 0,2 I/O end 12,5 17 DD start,2 0,2 DD end ns Rise time: 1ns DUT I TLP oltage [] Transmission Line Pulsing (TLP) Measurement Transmission Line Pulsing System F Recommended Land Layout: G Body Marking: 1.00 mm 4 3 F E C C1 D mm B 1.40 mm C 1.90 mm W03XY B 1 C mm D 2.20 mm E 0.80 mm 1 2 F 3.0 mm W03: Device Code X: Date Code Y: Control Code PGE 3 OF 5
4 H Dimensions: TS Diode rray WE-TS DTUM / DTE : PGE 4 OF 5
5 TS Diode rray WE-TS I Tape: Feeding Direction ØD E F Pin 1 K I J G 3.15 ± 0.15 mm B 4.00 ± 0.10 mm C 8.00 ± 0.20 mm D 1.55 ± 0.05 mm E 4.00 ± 0.10 mm F 2.00 ± 0.05 mm G 1.75 ± 0.10 mm H 3.50 ± 0.05 mm I 3.25 ± 0.15 mm J 1.35 ± 0.15 mm K 0.25 ± 0.02 mm H C B J Reel: a ± 2.0 mm b 13.0 ± 0.8 mm c 10.0 ± 1.5 mm d 12.5 ± 2.0 mm b a 15 to 180 c d Quantity per Reel: 3000 General Release: Customer... Date... Signature Würth Elektronik Checked pproved JB ersion Name Modification Date This electronic component has been designed and developed for usage in general electronic equipment. Before incorporating this component into any equipment where higher safety and reliability is especially required or if there is the possibility of direct damage or injury to human body, for example in the range of aerospace, aviation, nuclear control, submarine, transportation, (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network etc, Würth Elektronik eisos GmbH must be informed before the design-in stage. In addition, sufficient reliability evaluation checks for safety must be performed on every electronic component which is used in electrical circuits that require high safety and reliability functions or performance. PGE 5 OF 5
Specification for release
Description: TS Diode rray WE-TS Specification for release DTUM / DTE : 2010-01-27 Features: B Schematic and Pin Configuration: ESD Protection for 2 high-speed I/O channels and DD Provide ESD protection
More informationSpecification for release - Preliminary
Description: Features: B Schematic and Pin Configuration: ESD Protection for 2 high-speed I/O channels and DD Provide ESD protection for each channel to IEC 61000-4-2 (ESD) ±15k (air), ±8k (contact) IEC
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