CDDFN P - Surface Mount TVS Diode Array

Transcription

1 *RoHS COMPLIANT Features n RoHS compliant* n Low capacitance -. pf (I/O to I/O) n ESD protection to IEC -- (Level ) Applications n USB 3. n USB 3. CDDFN-5P - Surface Mount TVS Diode Array General Information The CDDFN-5P device provides ESD protection for highspeed data ports, meeting IEC -- (Level ) requirements. The Transient Voltage Suppressor array, protecting up to six data lines, offers Working Peak Reverse Voltages of 5 V (one line), 3.3 V (two lines) and. V (four lines) compatible with USB 3.. The DFN packaged device has an ultra-low typical capacitance of only. pf between I/O lines. This allows it to be used for protecting sensitive components used on high-speed interfaces. The small footprint of the device allows for flow-through routing on the PCB, helping to maintain matched impedances of the high-speed data lines. 9 5 V 3.3 V 5 7. V Absolute Maximum Ratings (@ T A = 5 C Unless Otherwise Noted) Parameter Symbol CDDFN-5P Unit Peak Pulse Current (t p = / μs) () I pp A ESD (per IEC -- Contact) kv ESD (per IEC -- Air) 5 kv Operating Temperature T J - to +5 ºC Storage Temperature T STG -55 to +5 ºC Electrical Characteristics (@ T A = 5 C Unless Otherwise Noted) Pin ( ) to Ground Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage V WM_BUS 5 V Breakdown ma V BR_BUS V Snap-back 5 ma V SB_BUS 5.5 V Leakage V WM_BUS I R_BUS.5 μa Clamping I PP = A V C_BUS.5 V Channel V, MHz C IN_BUS 7 pf Pin or (D+, D-) to Ground (Unless Otherwise Noted) Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage V WM_USB 3.3 V Breakdown ma V BR_USB.5 V Snap-back 5 ma V SB_USB 3. V Leakage V WM_USB I R_USB μa Forward 5 ma V F_USB.9 V Clamping I PP = A V C_USB 7. V Channel V, MHz C IN_USB.35.5 pf Channel to Channel V, MHz () (3) C CROSS_USB.. pf Note : Pin () to Ground Note : Between Pins and (D+ to D-) Note 3: Pin 9 = V (Continued on next page) *RoHS Directive /95/EC Jan. 7, 3 including annex and RoHS Recast /5/EU June,.

2 CDDFN-5P - Surface Mount TVS Diode Array Electrical Characteristics - Continued (@ T A = 5 C Unless Otherwise Noted) Pin, 5, or 7 (SSTX+, SSRX+, SSTX-, SSRX-) to Ground (Unless Otherwise Noted) Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage V WM_SS. V Breakdown ma V BR_SS.5 V Snap-back 5 ma V SB_SS. V Leakage V WM_SS I R_SS μa Forward 5 ma V F_SS.9 V Clamping I PP = A V C_SS.5 V Channel V, MHz C IN_SS.35.5 pf Channel to Channel V, MHz (3) () C CROSS_SS.. pf Note 3: Pin 9 = V Note : Between any two I/O; Pins, 5, or 7 (SSTX+, SSRX+, SSTX-, SSRX-)

3 CDDFN-5P - Surface Mount TVS Diode Array Performance Curves Typical Voltage vs. Capacitance C IN () Typical Voltage vs. Capacitance C CROSS (5)..5 Input Capacitance (pf) Pin ( ) = Float, Pin 9 (GND) = V f = MHz, T = 5 C Input Voltage (V) Input Capacitance (pf) Pin ( ) = Float, Pin 9 (GND) = V f = MHz, T = 5 C Input Voltage (V) Typical Insertion Loss S () Typical Analog Cross Talk (5) Insertion Loss (db) GHz: -3 db e+ e+9 e+ Frequency (Hz) Analog Cross Talk (db) e+ e+9 e+ Frequency (Hz) Typical Transmission Line Pulsing (TLP) Transmission Line Pulsing (TLP) Current (A) V_pulse Pulse from a transmission line TLP_I ns + TLP_V DUT - to GND Transmission Line Pulsing (TLP) Voltage (V) Typical Transmission Line Pulsing (TLP) Transmission Line Pulsing (TLP) Current (A) Pulse from a transmission line V_pulse ns Pin, 5,, 7 to GND + TLP_V - DUT TLP_I Pin, to GND Transmission Line Pulsing (TLP) Voltage (V) Note : Any I/O Pin (,,, 5,, or 7) to Ground (D+, D-, SSTX+, SSRX+, SSTX-, SSRX-) Note 5: Between any two I/O Pins (,,, 5,, or 7) (D+, D-, SSTX+, SSRX+, SSTX-, SSRX-)

4 CDDFN-5P 33 - mm SMD - Surface Trimming Mount Potentiometer TVS Diode Array Applications Information The Model CDDFN-5P was designed to provide ESD and surge protection for USB 3. and USB 3. applications. USB 3.x controller ICs typically have device level ESD ratings of about kv per ANSI/ESDA/JEDEC JS--, to prevent ESD damage in a manufacturing environment. For this ANSI/ESDA/JEDEC JS-- test, a pf cap capacitor is discharged into the device input through a 5 ohm resistor. A system level ESD requirement is, however, typically specified to IEC --, which is more stringent than JESD-AF requirements. The IEC -- test discharges a 5 pf capacitor through a 33 ohm resistor. The CDDFN-5P is designed to enable a USB3.x controller IC to meet system ESD levels as high as kv (contact test) per the IEC -- Standard. The device also provides up to A (/ µs) of surge protection on the 5 V line per IEC --5. The Bourns Model CDDFN-5P provides protection for six signal lines and a 5 V power bus. Its ultra-low capacitance minimizes signal distortion on USB 3. super-speed data lines with Gbps data rates. The figure below shows the connection diagram for one port of a USB 3.x application. USB 3. provides three voltage/current options for bus power: 5 up to A, up to 5 A and up to 5 A. The line should only be connected to Pin of the CDDFN-5P device if the bus voltage is limited to the 5 V option. In cases where the bus voltage is V or V, a separate device is required to protect the line. USB CONNECTOR D+ D- SSTX+ SSTX- SSRX+ SSRX- CDDFN-5P 3 NC 5 Flow-through package design (Top View) 9 NC 7 POWER CIRCUIT(S) V DD GND D+ D- SSTX+ SSTX- SSRX+ SSRX- USB 3.x CONTROLLER The flow-through package design of the Model CDDFN-5P simplifies signal routing on the printed circuit board. This minimizes the effect of the device connection on the signal line impedance and on system performance. The Gbps eye diagrams below show that the loading of Pins through 7 has a minimal impact on the performance of the USB 3. super-speed data lines. Performance Without Protection Performance With Protection -5 ps +5 ps -5 ps +5 ps

5 CDDFN-5P 33 - mm SMD - Surface Trimming Mount Potentiometer TVS Diode Array Product Dimensions Device Pinout This is a molded DFN package with lead free % Matte Sn on the lead frame. It has a flammability rating of UL 9V (.5 -.) (.7 -.) MIN. (.) N (. -.35) (. -.) N ( ) Recommended Footprint. -.5 (. -.). (.3) TYP. N.5 REF. (.) N (. -.) (.9 -.5) Typical Part Marking (Top View) Pin Function, D+, D- (USB Differential Pair) VBUS 3, N.C., 5,, 7 SSTX+, SSTX-, SSRX+, SSRX- (Super-Speed Pairs) 9 Ground Center Pad Ground CDDFN-5P...5. (.5) TYP (.7 -.) How to Order CD DFN - 5 P. (.3) TYP (. -.35). (.) MIN.. (.3) TYP (. -.) ( ) Common Diode Chip Diode Package DFN = DFN- Package Working Peak Voltage 5 = 5 V RWM (Volts) Number of Lines = Ground / Data Lines Suffix P = Ultra-low Capacitance DIMENSIONS: MM (INCHES)

6 CDDFN-5P 33 - mm SMD - Surface Trimming Mount Potentiometer TVS Diode Array Packaging Information The product is packaged in an mm x mm tape and reel format per EIA--A standard. P Pin Location B P d Index Hole E F W T D D D P A C Trailer Device Leader End pitches (min.) pitches (min.) Start DIMENSIONS: MM (INCHES) W Direction of Feed Item Symbol DFN- Carrier Width Carrier Length Carrier Depth Sprocket Hole Reel Outside Diameter A B C d D. ±.5 (.7 ±.). +.5/-. (. +./-.). ±.5 (.3 ±.).5 +./- (.59 +./-) ± 3 (7.7 ±.) Reel Inner Diameter D 5. (.99) MIN. Feed Hole Diameter D /-. (.5 +./-.) Sprocket Hole Position Punch Hole Position Punch Hole Pitch E F P.75 ±. (.9 ±.) 5.5 ±.5 (.7 ±.). ±. (.57 ±.) Sprocket Hole Pitch P. ±. (.57 ±.) Embossment Center P. ±.5 (.79 ±.) Overall Tape Thickness Tape Width T W. (.) MAX..3 (.) MAX. Asia-Pacific: Tel: Fax: EMEA: Tel: Fax: +3 5 The Americas: Tel: Fax: Reel Width W (.7) MAX. Quantity per Reel -- 3 /