Integriniai grandynai
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1 1 Integriniai grandynai 1947 germanio taškinis tranzistorius 1954 Si tranzistorius 1957 SiO 2 precizin fotolitografija 1958 planarusis tranzistorius, grupiniai gamybos metodai 1959 puslaidininkinis grandynas
2 2 Integrinių grandynų pradininkai The integrated circuit was first conceived by a radar scientist, Geoffrey W.A. Dummer (born 1909), working for the Royal Radar Establishment of the British Ministry of Defence, and published in Washington, D.C. on May 7, Dummer unsuccessfully attempted to build such a circuit in The first integrated circuits were manufactured independently by two scientists: Jack Kilby of Texas Instruments filed a patent for a "Solid Circuit" made of germanium on February 6, Kilby received patents U.S. Patent , U.S. Patent , U.S. Patent , and U.S. Patent Robert Noyce of Fairchild Semiconductor was awarded a patent for a more complex "unitary circuit" made of Silicon on April 25, (See the Chip that Jack built for more information.) Noyce credited Kurt Lehovec of Sprague Electric for the principle of p-n junction isolation caused by the action of a biased p-n junction (the diode) as a key concept behind the IC.
3 3 Jack St. Clair Kilby (November 8, 1923 June 20, 2005) was a notable American electrical engineer who co-won the Nobel Prize in physics in He invented the integrated circuit in 1958 while working at Texas Instruments (TI). A patent for a "Solid Circuit made of Germanium", the first integrated circuit, was filed on February 6, In addition to the integrated circuit, Kilby also is noted for patenting the electronic portable calculator and the thermal printer used in data terminals. In total, he held about 60 patents. In the summer of 1958, Kilby was a newly employed engineer at Texas Instruments who did not yet have the right to a summer vacation. He spent the summer working on the problem in circuit design that was commonly called the "tyranny of numbers" and finally came to the conclusion that manufacturing the circuit components en masse in a single piece of semiconductor material could provide a solution. On September 12 he presented his findings to the management of Texas Instruments: he showed them a piece of germanium with an oscilloscope attached, pressed a switch, and the oscilloscope showed a continuous sine wave, proving that his integrated circuit worked and thus that he solved the problem. From 1978 to 1985, he was Distinguished Professor of Electrical Engineering at Texas A&M University. In 1983, Kilby retired from Texas Instruments.
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6 6 Jack Kilby examines a wafer filled with chips. Photo: Texas Instruments
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8 8 Robert Noyce, Ph.D. (December 12, 1927 June 3, 1990), nicknamed "the Mayor of Silicon Valley", co-founded Fairchild Semiconductor in 1957 and Intel in He is also credited (along with Jack Kilby) with the invention of the integrated circuit or microchip although Kilby's invention was 6 months earlier. While a student at Grinnell College, Noyce stole a pig from a nearby farmer for a college luau and then slaughtered it in Clark Hall. The prank nearly earned him expulsion, if not for the intervention of Grant O. Gale, a physics professor at the time. He later returned the favor by allowing the college to invest in Intel at an early stage. He joined William Shockley at the Shockley Semiconductor Laboratory division of Beckman Instruments, but left with the "Traitorous Eight" to create the influential Fairchild Semiconductor corporation. Intel's headquarters building, the Robert Noyce Building, in Santa Clara, California is named in his honor, as is the Robert N. Noyce '49 Science Center. Noyce was awarded the IEEE Medal of Honor in 1978 "for his contributions to the silicon integrated circuit, a cornerstone of modern electronics.
9 9 Robert Noyce Photo: Intel Museum Archives egrated_circuit/history/
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11 11 Pirmasis integrinis grandynas
12 12 Integrinių grandynų pradininkai By 1961, Fairchild and Texas Instruments had announced the availability of the first commercial planar integrated circuits comprising simple logic functions m. MTI Venta pagamino pirmąją puslaidininkinę mikroschemą Lietuvoje. Puslaidininkin s fizikos pradininku Lietuvoje laikomas prof. Povilas Brazdžiūnas. Pamin tini prof. Stepono Janušonio, Albino Marcinkevičiaus, Romualdo Navicko nuopelnai.
13 13 Integrinių grandynų tipai Integriniai grandynai yra konstrukcin s, technologin s ir mokslin s bei technin s integracijos rezultatas. Integracija tai dalių, elementų jungimas į visumą. Konstrukcin integracija pasireiškia tuo, kad visi elektrin s grandin s elementai integriniame grandyne sudaro nedalomą visumą. Technologin s integracijos esmę sudaro tai, kad integrinių grandynų gamyboje taikomi grupiniai gamybos metodai. Mokslin bei technin integracija pasireiškia tuo, kad kuriant ir gaminant integrinius grandynus taikomos fizikos, chemijos, metalurgijos, medžiagų mokslo, metrologijos bei kitos mokslo ir technologijų žinios, pažangiausios id jos ir laim jimai.
14 14 Hibridinis integrinis grandynas
15 15 Puslaidininkinis integrinis grandynas
16 16 Puslaidininkinis integrinis grandynas The integrated circuit from an Intel 8742, an 8-bit microcontroller that includes a CPU running at 12 MHz, 128 bytes of RAM, 2048 bytes of EPROM, and I/O in the same chip.
17 Puslaidininkinis integrinis grandynas 17
18 18 Integriniai grandynai Integrated circuit Интегральная схема Integralin schema Intégrin schema Integr í n schema Integrin grandin Telktinis grandynas Integruotoji grandin Integralioji grandin Integrinis grandynas
19 19 PUSLAIDININKINIŲ INTEGRINIŲ GRANDYNŲ TIPAI IR ELEMENTAI 1. Puslaidininkinių grandynų elementų izoliavimas 2. Dvipolių integrinių grandynų gamyba ir elementai 3. MOP integrinių grandynų gamyba ir elementai 4. Individualus lustų apdorojimas 5. Integracijos laipsnis. Mikroelektronikos raidos kryptys Tikslas: Išsiaiškinti integrinių grandynų tipus, nesud tingų puslaidininkinių IG formavimo principus, elementų sandarą, savybes ir tobulinimo kryptis.
20 20 PUSLAIDININKINIŲ INTEGRINIŲ GRANDYNŲ TIPAI IR ELEMENTAI 1. Puslaidininkinių grandynų elementų izoliavimas 2. Dvipolių integrinių grandynų gamyba ir elementai 2.1. Dvipolių integrinių grandynų gamyba 2.2. Dvipoliai tranzistoriai 2.3. Integriniai diodai 2.4. Integriniai kondensatoriai 2.5. Integriniai rezistoriai 2.6. Laidininkai ir kontaktin s aikštel s 3. MOP integrinių grandynų gamyba ir elementai 3.1. MOP integrinių grandynų gamybos schema ir elementai 3.2. Tobulesni MOP integrinių grandynų gamybos būdai 4. Individualus lustų apdorojimas 5. Integracijos laipsnis
21 21 PUSLAIDININKINIŲ INTEGRINIŲ GRANDYNŲ TIPAI IR ELEMENTAI 1. Puslaidininkinių grandynų elementų izoliavimas 2. Dvipolių integrinių grandynų gamyba ir elementai 3. MOP integrinių grandynų gamyba ir elementai 4. Individualus lustų apdorojimas 5. Integracijos laipsnis. Mikroelektronikos raidos kryptys Tikslas: Išsiaiškinti integrinių grandynų tipus, nesud tingų puslaidininkinių IG formavimo principus, elementų sandarą, savybes ir tobulinimo kryptis.
22 22
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