Miniaturization process technology

Transcription

1 Miniaturization process technology 1 st lecture: introduction Prof. Yosi Shacham-Diamand Fall

2 The First Computer The Babbage Difference Engine (1832) 2,500 parts 6 years to build Cost: 17,470 2

3 ENIAC First electronic computer (1946) Built by John W. Mauchly (computer architecture) and J. Presper Eckert (circuit engineering), Moore School of Electrical Engineering, University of Pennsylvania. Formed Eckert & Marchly Computer Co. and built the 2nd computer, Univac. Went bankrupt in 1950 and sold to Remington Rand (now defunct). IBM built 401 in 1952 (1st commercial computer) and John von Neumann invented controversial concept of interchangeable data and programs. 3

4 4 Vacuum Tubes in First Computer

5 Solid State Electronics (Details in following slides) 1906 Semiconductors used to detect radio signals (Pickard, ATT) 1912 Semiconductors found to rectify AC (Pickard, ATT) 1925 FET concept patent by J. Lilienfeld (next slide) (AMRAD Co., US#1,745,175, #1,900,018, #1,877,140), also 1935 by O. Heil (British #439,457 ) 1943 Germanium crystals used for Radar demodulation Transistor Invented (ATT ignores Lilienfeld) Bardeen, Brattain and Schockley, ATT, Nobel Prize, Crude FETs made (Field Effect Transistor) 1958 Integrated Circuit : Kilby (TI) & Noyce(F.S.) Legally EQUAL inventors, Noyce dies 1990, Kilby - Noble Prize in MOS-FET manufactured and patented Khang and Atatta (ATT) CMOS logic invented (replaced resistors with transistors) Wanlass and Sah (General Micro Electronics -company lasted only 4 years) Self-Aligned MOSFET Transistor 5 Robert Bower (Hughes Research Labs).

6 Lilienfeld FET Transistor (1930)

7 The First Transistor John Bardeen and Walter Brattain at Bell Laboratories constructed the first solid-state transistor. This PNP point-contact germanium transistor operated with a power gain of 18 on Dec. 23, With their 7 manager, William Shockley, they won the Nobel Prize in 1956.

8 8 Historical Perspective

9 The First Transistor Product 9 The first transistor radio was a joint project of the Regency Co. and Texas Instruments. TI built the transistors; Regency built the radio. On October 18, 1954, the Regency TR1 was put on the market. It was a scant five inches high and used four germanium transistors. It was discontinued in 1955.

10 10 The First Transistor Product In Japan, a tiny company had other ideas. Tsushin Kogyo was close to manufacturing its first radios when it heard that an American company had beaten them to market. But they persevered and made a radio, the TR-52. Sony When Regency quit producing their radio, the Japanese company immediately started shipping their radio to the U.S. One immediate problem was that Americans couldn t pronounce their name. The founders, Ibuka and Morita, thought of using a Latin word sonus meaning "sound." Akio Morita knew some English, and made a simple variation that became their name from then on: SONY

11 1956 -William Shockley had gone as far as he was going to go at Bell Labs. His patent for an FET had been disallowed when Lilienfeld s early patents were discovered. Shockley moved to Palo Alto and founded Shockley Semiconductor Laboratory had officially opened for business. A genius he may have been, but a good manager he was not.. 11

12 the "traitorous eight resigned. The next day they signed a contract for $1.3 million with a New York firm called Fairchild Camera and Instruments which was involved with missiles and satellite systems. The eight men were Julius Blank, Victor Grinich,, Jean Hoerni,, Gene Kleiner,, Jay Last, Gordon Moore, Robert Noyce,, and Sheldon Roberts. Three years later Moore and Noyce left to found Intel. 12

13 Invention of the Integrated Circuit In July, 1958, Jack Kilby built a working model, and on February 6, Texas Instruments filed a patent. Their first "Solid Circuit" the size of a pencil point, was shown off for the first time in March.

14 Invention of the Integrated Circuit Robert Noyce was working at the small Fairchild Semiconductor startup company. Knowing that TI had already filed a patent on something similar, Fairchild wrote out a highly detailed application, hoping that it wouldn't infringe on TI 's similar device.

15 Invention of the Integrated Circuit All that detail paid off. In April, 1961, the patent office awarded the first patent for an integrated circuit to Robert Noyce while Kilby's application was still being analyzed. Today, both men are acknowledged as having independently conceived of the idea.

16 Jack Kilby s First Integrated Circuit (An oscillator circuit on germanium substrate) 16 Photo courtesy of Texas Instruments, Inc.

17 Kilby was awarded the Nobel Prize in 2000 for his Integrated Circuit work. Ed Noyce died in 1990, and hence was ineligible for the Prize (given only to living persons). 17

18 Early Integrated Circuits Bipolar logic 1960 s ECL 3-input Gate/SRAM Motorola

19 Preparation of Silicon Wafers 1. Crystal Growth Polysilicon Crucible Seed crystal 6. Edge Rounding Heater 7. Lapping 2. Single Crystal Ingot 8. Wafer Etching 3. Crystal Trimming and Diameter Grind 4. Flat Grinding 9. Polishing Slurry Polishing head Polishing table 5. Wafer Slicing 10. Wafer Inspection 19

20 Stages of IC Fabrication 1. Wafer Preparation includes crystal growing, rounding, slicing and polishing. Single crystal silicon Wafers sliced from ingot 4. Assembly and Packaging: The wafer is cut Scribe line along scribe lines to separate each die. A single die 2. Wafer Fabrication includes cleaning, layering, patterning, etching and doping. Metal connections are made and the chip is encapsulated. Assembly Packaging 3. Test/Sort includes probing, testing and sorting of each die on the wafer. Defective die 5. Final Test ensures IC passes electrical and environmental testing. 20 Figure 1.6

21 IC Production in Wafer Fab 21 Photo courtesy of Advanced Micro Devices

22 22

23 23 IC Minimum Feature Size

24 24 IC Minimum Feature Size

25 25 Ultimate Small Scale Structure

26 Junction Transistor

27 Alloy Junction Transistor 27

28 First Planar Transistor

29 Basic Bipolar Paired Transistors Bias Resistor NPN Bipolar Device Bias Resistor 29

30 Modern Integrated Circuit Section 30

31 SEM Cross-Section of Integrated Circuit Wiring Layers Wiring Layers Wiring Layers Vias through Passivating Layers 31 CMOS Devices

32 Historical Dates of IC Technology Transistor Bardeen et al. (Bell Labs) in 1947 Bipolar transistor Schockley et al. in 1949 First bipolar digital logic gate Harris in 1956 First monolithic IC Jack Kilby in 1959 First commercial IC logic gates Fairchild 1960 TTL Circuits 1962 into the 1990 s ECL Circuits 1974 into the 1980 s 32

33 MOSFET transistor - Lilienfeld (Canada) in 1925 and Heil (England) in 1935 CMOS Invented in 1960 s, but plagued with manufacturing problems for 20 years. PMOS Limited use in calculators in 1960s NMOS Limited use in special applications in 1970s CMOS in 1980 s Contamination problems solved and CMOS became IC standard technology except for high speed BiCMOS, Silicon-Germanium, Stressed Silicon 2000 IBM: SOI, Copper Wiring, Low-k Dielectrics 33 MOS Technology Dates

34 Moore s Law In 1965, Gordon Moore predicted that the number of transistors that can be integrated on a die would double every 18 to 14 months (i.e., grow exponentially with time). Amazingly visionary million transistor/chip barrier was crossed in the 1980 s transistors, 1 MHz clock (Intel 4004) Million transistors (Ultra Sparc III) 42 Million, 2 GHz clock (Intel P4) Million transistor (HP PA-8500) 34

35 Intel 4004 Microprocessor MHz, 5V 5k Components 35

36 Intel Pentium (III) Microprocessor MHz, 3.3V 3M Components 36

37 37 Pentium III Layout

38 Intel Pentium (IV) Microprocessor GHz, 1.8V 42M Components 38

39 Moore s Law in Microprocessors Transistors on lead microprocessors double every 2 years Transistors (MT) Average 2X every 1.96 years Pentium proc Year Courtesy, Intel

40 Evolution in DRAM Chip Capacity human memory human DNA 4X growth every 3 years! 64,000,000 16,000, µm 4,000, µm Kbit capacity/chip ,000 book 4, µm µm page 16, µm 64, , µm 1,000, µm µm 0.13 µm encyclopedia 2 hrs CD audio 30 sec HDTV Year

41 Die Size Growth Die size grows by 14% to satisfy Moore s Law 100 Die size (mm) P6 Pentium proc ~7% growth per year ~2X growth in 10 years Year Courtesy, Intel

42 10000 Clock Frequency Lead microprocessors frequency doubles every 2 years X every 2 years Frequency (Mhz) P6 Pentium proc Year Courtesy, Intel

43 Power Dissipation Lead Microprocessors power continues to increase Power (Watts) Mainframe Chips (liquid cooled) P6 Pentium proc Year 43 Power Removal is Immediate Problem (2003) Courtesy, Intel

44 Power Density Power Density (W/cm2) Hot Plate Rocket Nozzle Nuclear Reactor P6 Pentium proc Year Power density too high to keep junctions at low temp 44 Courtesy, Intel

45 Design Productivity Trends 10, ,000 Complexity Logic Transistor per Chip (M) 1, Logic Tr./Chip Tr./Staff Month. x x x x x x x x 58%/Yr. compounded Complexity growth rate 21%/Yr. compound Productivity growth rate 10,000 1, Productivity (K) Trans./Staff - Mo Complexity outpaces design productivity 45 Courtesy, ITRS Roadmap

46 Technology Directions: SIA Roadmap Yearbb Feature size (nm) Mtrans/cm Chip size (mm 2 ) Signal pins/chip Clock rate (MHz) Wiring levels Power supply (V) High-perf power (W) Battery power (W) For Cost-Performance MPU (L1 on-chip SRAM cache; 32KB/1999 doubling every two years) 46

47 Further Scaling will be possible if.. The key is in: or Extending existing CMOS technology Devising new nanotechnology New methods of computing New architectures 47