Next Generation Package on Package

Transcription

1 Next Generation Package on Package Alternative PoP with Routable Substrate Interposer for Stacking Solution Steven(Jui Cheng) Lin, Siliconware Precision Industries Co., Ltd

2 Outline High IO / Wide IO Market Trend Alternative PoP for Wide IO Approach HBW PoP Cu Core Solder Ball Development Status HBW PoP Cu Stud Development Status Summary 2

3 IC Market Overview by Product Applications Source: PRISMARK AUG 2013 >>> Compared with other product applications, Smart Phones and Tablets have much higher growth rates. 3

4 Mobile Memory Technology Trend Mobile DRAM has evolved in a way to support higher bandwidth and power efficiency for Smart devices. Mobile DDR 4

5 SMART Phone AP Package Trend LPDDR LPDDR2 LPDDR3 LPDDR4 or Wide I/O 64Mb~2Gb 64Mb~3.2Gb 4Gb~16Gb 8Gb~32Gb PKG Ht <1.0 (mm) 3D IC Clock Speed 1.1 (mm) Bare Die MEP 2.5GHz 1.5GHz 1.2~1.5 (mm) Exposed Die Molded PoP Thermal 1.2GHz epop PoP Tj 105C 1.0GHz 5

6 PoP Development Trend PoP Roadmap -- Thin Low Cost High Band Width Enhanced PoP Exposed Die PoP Bare Die PoP HBW PoP Structure Application Bottom Digital: APPs+Modem Top Memory: LPDDRx Bottom Digital: APPs + Modem Top: RFA/PMIC/Connectivity Module Package Thickness 0.84mm 0.80mm 0.80mm 0.67mm Target SPIL Readiness 2009 ~ 2012 ~ 2013 ~ 2014 ~ Alternative HBW PoP with routable substrate interposer development for high IO approach. 6

7 Alternative PoP for High IO/Wide IO Alternative LPDDR2/3 LPDDR5 or wide I/O2 Mobile LPDDR2/3 with Peripheral Balls LPDDR4/RFA/PMIC potentially with Full Array Balls Wide I/O2 800~1000 Micro Bumps epop HBW PoP 3D IC Hi IO Memory: LPDDR4 IO Bandwidth 12.8GB/die Estimated Package Ball Count 256~520 7

8 Memory PKG Ball Pitch & Ball Counts Mobile LPDDR2/3 with Peripheral Balls Hi IO Memory if Full Array 2 rows 3 rows Full Array POR Solder Ball or Cu Core Cu Stud PoP PoP Package Size / TBP Top Ball Counts Upper Substrate Top Surafce Top Ball Rows 0.5mm 0.4mm 0.35mm 0.3mm 0.2mm 2 rows 3 rows 4 rows 5 rows Solder Ball Count Full Array

9 HBW PoP: Cu Core Solder Ball & Cu Stud POR Cu Core ~0.3mm TBP (3Rows,I/O-480) Cu Stud <0.3mm TBP (4 rows,i/o-860) Cu Core Solder Ball + Two Side Cu Studs + Stacking Stacking Mold Encapsulation Mold Encapsulation 9

10 HBW PoP Cu Core TV Structure Design Test Vehicle: PKG type: Mold Encapsulated PoP PKG size: 12x12 mm 2 Die size: 8.3x8.7 mm 2 Top substrate: 126 um/2l Bottom substrate: 242 um/4l Structure : CUF + Mold Top/Bottom Ball Pitch: 0.4/0.4mm Top/Bottom Ball Size: 0.2/0.25mm H: 670um 195um Cu Core 25um Sn 190um SRO 10

11 HBW PoP Cu Core TV Evaluation Upper-bottom Substrate Mounting: Ball Standoff Avg: 165um Issue: Non-wetting Root cause: Top sub. warpage/insufficient soldler Action: 1. Reflow jig improvement 2. Increase solder vol. X-ray SEM FA Good joint Non-wetting non-wetting 11

12 HBW PoP Cu Core TV Evaluation Warpage Data with optimized EMC: HBW PoP showed good warpage performance Sign Direction Crying (+) Corners is lower than center Smiling (-) Corners is higher than center Warpage (um) Warpage by temperature change Temperature ( C) 28C 50C 100C 150C 183C 217C 245C 260C 245C 217C 183C 150C 100C 50C 32C #1-1 #1-2 #1-3 Sample 28C 50C 100C 150C 183C 217C 245C 260C 245C 217C 183C 150C 100C 50C 32C # # # Unit: um 12

13 HBW PoP Cu Core TV Evaluation Layer Thickness Verification : Meet design value Layer Thickness Layer( mm) Design Measurement Top SUB / Stand off Bottom SUB / ( Remark :BGA ball & POP Cu ball not at same location ) Final ENG Sample Structure & Package Level Reliability : Workable process shown by reliable profile L3/260 + TCB 500x pass (target to TCB1000x) 13

14 HBW PoP Cu Stud TV Structure Design Test Vehicle: 0.255mm stud pitch (TV1) PKG size: 15x15 mm 2 Die size: 11.3x9.4 mm 2 Top substrate: 126 um/2l Bottom substrate: 242 um/4l Top Cu height: 30 +/-15, Sn : 45 +/-15 Bottom Cu height: 130 +/-20 Mold thickness: 172 um IO count: 864 (4 rows) 255 um > 800 IOs 172 um 14

15 HBW PoP Cu Stud Development Cu stud height 110 um development : The uniformity of +/- 15 um meet the requirement of +/- 20 um on all three legs. Diameter : 110 um Diameter : 130 um Diameter : 150 um 15

16 HBW PoP Cu Stud Development Diameter / Height_150 um / 120 um development result : Cu height: -Min: um ; Max: um -Avg: um ; Stdev: 4.36 Cu height uniformity: -3 *(σ +σ x ) = 3*( ) = +/- 16 um After developing After plating + buffing ~120um 16 Cross-section

17 High Cu Stud with Good Uniformity Merit: Good Cu plating uniformity : By panel plating to approach balanced plating current distribution. Good Cu height uniformity : By grinding process to control Cu height (Capability : +/- 20 um) 1) 2) 17

18 HBW PoP Cu Stud Development Cu Stud pitch / Height_200 um / 130 um development result : 18

19 Summary The high IO development is inevitable based on the functionality increasing on smart phone and tablet. SPIL alternative PoP with routable substrate interposer can approach the high bandwidth/ high IO application. More challenge IO request(>1000) is even under developing by SPIL HBW PoP. 19

20 20 Thank You!