FST s status on EUV Pellicle & Inspection System Development
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1 FST s status on EUV Pellicle & Inspection System Development OCT.04, 2015 EUV Pellicle Imec, nl. Donwon Park FST (Korea)
2 FST Business Segments Division Pellicle TCU (Temperature Control Unit) Products Semiconductor - ArF Immersion / ArF / KrF / G&I / G&H FPD : 3345 ~ 1214 PCB : 2020 Compressor Heat Exchanger Thermo-Electrical THC NPD (New Product Development) Local Laser Annealing HHG-EUV Light Source Affiliated AUROS Technology Metrology : Overlay Metrology System Inspection : Pellicle/Mask Inspection Wafer Inspection System IMT Laser Cleaning CO2 Cleaning 2
3 A. EUV pellicle A-1. FST s Direction for EUV pellicle membrane development PVD inorganic EUV pellicle membrane material on the spin-on polymer layer, instead of Si-wafer, then, remove the polymer FST patented. The surface roughness of polymer layer before PVD of Inorganic. : checked as ~ equivalent to that of Si-wafer surface, minimizing the membrane bowing, wrinkling, and local EUV transmission non-uniformity, after removing the polymer The 1 st candidate for the inorganic membrane material : SiC, then, other(s), likely SiC-Si-SiC, as the next. Expect the very low yield for the fabrication of defect-free full size EUV pellicle, regardless of what kind of EUV pellicle membrane! The following process flow possibly enables the fabrication of relatively simpler, cost-effective EUV pellicle, if it works for the full size pellicle. 3
4 A-2. FST s SiC Pellicle Fabrication Flow 1. Spin-on, organic polymer layer on the highly polished substrate. 2. Bake/ polymer layer detached & turn-over /PVD SiC layer on the polymer layer Adhesive Frame 3. Frame attachment 4. Cut/Trim 5. Selectively remove the polymer layer Analysis 4
5 A-3. The simulated EUV Transmission for the candidates materials Material Thickness 20 nm 25 nm 50 nm 75 nm Si SiC Si 3N Zr Mo Graphene B 4C (a) Transmission graph of candidate materials (b) Transmission table of candidate material Figure (a) and table (b) show the transmission of single-layer pellicle membrane at 13.5 nm EUV light. 5
6 A-4. EUV Transmission Test of membrane EUV Transmission TEST of SiC membrane SiC membrane thickness: ~ nm The current test method with FST s EUV Light source: just for the local area of the membrane <EUV Beam Path> X-ray mirror Move Pellicle IR Filter X-ray CCD 6
7 7 A-5. EUV Transmission Test Result for SiC membrane
8 A-6. SiC Thickness measurement Alpha-step & Ellipsometry for ~27 nm SiC film on Si-wafer Alpha-step data Ellipsometry data Alpha-step Ellipsometry Thickness (nm)
9 A-7. Candidate Material Characteristics(Bulk-based, except Graphene) Material EUV Transmittance (%, 23 nm-thk) Thermal Emissivity Thermal Conductivity (W/m K) Thermal Expansion Coefficient (K -1 ) Vickers Hardness / Young s modulus (GPa) Single- Bonding E. (ev) Melting Point ( C ) SiC ~ , 500 (single crystal) x10-6 / Si x10-6 / Si 3 N x10-6 / Graphene > 200-7x10-6 (Negative) ~ 3500? Sublime B 4 C x10-6 / Zr x10-6 / Mo x10-6 / Nb x10-6 / Metallic Bond Metallic Bond Metallic Bond
10 A-8. EUV Pellicle Size-up & Broken SiC membrane shape Size-up Lately, found the good way to remove the polymer! No Wrinkling/Bowing Plan : 100 mm x 100 mm by the end of Oct Full-size by the end of Dec Φ 10 mm 27 nm thick SiC 50 mm x 50 mm 27nm thick SiC *some polymer residue still left(from Sep. 30, 2015 result), during the initial eval. of the new polymer removal process Wrinkle area Broken area * not-broken as pieces Wrinkle by defect 10
11 A-9. Frame for EUV pellicle Si FST s candidates for the frame : Si, Ti, SiC, so far, Si & Ti-frame made for the test. Ti Bare Anodized Surface Treatment 11
12 A -10. FST s EUV pellicle development roadmap Items Time line ~ ~ P1: Research P2: Pellicle size-up FST original Patent SiC membrane Research Patent Sample test Frame Research Sample test Adhesives Research Sample test P3: Prototype Development P4: Prototype EUV Litho. Test EUV Mass Production Present 12
13 B. EUV pellicle inspection system FST B-1. FST s Direction for system development EUV pellicle inspection system : Scan the EUV transmission on the whole membrane area to detect the membrane microscopic defect System Target spec. Defect resolution : < 20um Transmission accuracy : +/- 1% (?) Scan time / a full-size pellicle : <1.5 hour 13
14 B-2. System concept FST Filter * EUV Source type : DPP(Discharge Produced Plasma) or LPP-HHG(High order Harmonic Generation) * ML : Multi-Layered * B/S : Beam Splitter *EUV Source *ML Mirror *ML Mirror 1 st EUV Beam EUV Beam Mirror Beam Splitter Detector #1 *B/S 2 nd EUV Beam Detector1 Pellicle X-Y-Z-axis move Pellicle Detector #2 Comparison Detector2 Features [Fig.1] System configuration [Fig.2] Efficiency rate of EUV beam EUV beam separation (using by beam splitter) 1 st EUV beam is incident into detector #1 2 nd EUV beam is through pellicle and into detector #2. Beam matching Comparison between 1 st and 2 nd EUV beam. And then, calculate for EUV pellicle transmission. Control the EUV beam size Control the EUV beam size by adjusting distance between focal mirror & pellicle perpendicular position (z-axis). 14
15 B-3. Scanning on the pellicle FST 20~40um 20~40um EUV pellicle [Fig.3] EUV beam scanning process 15
16 B-4. FST s Roadmap for EUV pellicle inspection system FST Process Design MFG & Purchase Evaluation Contents EUV source Optic scheme Vacuum Chamber & Frame Inspection Chamber Optics Stage Vacuum chamber & Frame Accessories EUV source Laser & Optics Vacuum Part Vacuum chamber & Frame Accessories Inspection Chamber Stage Frame Optics Detector & CCD Accessories GUI System integration EUV source System Individual operation Optics alignment & EUV gen eration Inspection Chamber System Individual operation Full system operation GUI Test & Revision Data Analysis Month Remarks 16
17 Thank you very much! Q & A Let s break through!
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