SEMICONDUCTOR. fab equipment
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1 SEMICONDUCTOR fab equipment
2 BEFORE, GROWTH IN THE ELECTRONICS MARKET WAS DRIVEN BY THE INCREASING USE OF COMPUTERS Silicon-based microprocessor 6
3 TODAY, IT IS BEING LED BY THREE MAIN FACTORS MOBILE COMMUNICATIONS DATA NETWORKS ENERGY EFFICIENCY TO BE JOINED IN THE FUTURE BY A FOURTH Flat screens Smartphones, Tablets Wireless connectivity Data storage Computing power Cloud computing Optical fiber Low-energy lighting Electricity grids Speed drives HYBRID AND/OR ELECTRIC VEHICLES 7
4 THE WIRELESS COMMUNICATION MARKET IS JUST BEGINNING TO EXPAND Global wireless data traffic (exabytes p.a.) +92% CAGR 6.3 EB 3.8 EB 2.2 EB 0.2 EB 0.6 EB 1.2 EB 3G, 4G networks 2010 EB: exabytes =10 18 Source: Cisco VNI Mobile,
5 DATA STORAGE CAPACITY IS RISING SHARPLY Global data center traffic (zettabytes p.a.) +37% CAGR Reduction in data storage costs High-speed data transfers Zettabytes = Source: Cisco and Mersen estimates 9
6 ENERGY EFFICIENCY IS BECOMING A DRIVING FORCE IN EVERY MARKET (in billion of units) % CAGR A mass market LED lighting goes mainstream 11 cv Source: Strategies Unlimited and Piper Jeffray Research (USD billion) % CAGR A highly technical market AC speed controllers cv Source: Yole
7 MERSEN S ROLE IN SEMICONDUCTOR FABRICATION 11
8 CONTINUOUSLY IMPROVED TECHNOLOGIES, FROM SILICON TO NEW MATERIALS MATURE MARKET EMERGING TECHNOLOGIES Raw material/ substrate Silicon GaN/Sapphire SiC GaN GaAs InP Components Microprocessor Chip RAM Power components incl. IGBTs LEDs RF components Optronics End market Networks and PCs Speed drives Renewable energies Lighting Communications...DEMAND FOR INCREASINGLY SOPHISTICATED GRAPHITE PRODUCTS 12
9 MAJOR UPGRADES IN PRODUCTION PROCESSES INCREASINGLY PURE 0.01 PPB PRODUCTION PROCESS REQUIREMENTS INCREASINGLY BIG 450MM INCREASINGLY HOT AND CORROSIVE 2,500 C IMPROVE THE COST-EFFECTIVENESS OF OUR CUSTOMERS NEW COMPONENTS AND ENSURE NEW DEVELOPMENTS 13
10 PROCESSES TO MEET INCREASINGLY EXACTING PURITY STANDARDS Development of purification and ultra-pure deposit processes Supply increasingly pure products: Impurities < 1ppm Ultra-pure material solutions for ingot pulling in Si, Sapphire, SiC, and other 14
11 PROCESSES TO PRODUCE BIGGER AND BIGGER WAFERS Align the offering with the need for large blocks for ingot pulling (450mm wafers) Supply outsized products: E.g. 1,500 mm Ø isostatic graphite blocks Equipment for large Si, Sapphire, SiC and other crystal pulling furnaces 15
12 INCREASINGLY HOT AND CORROSIVE PROCESSES High temperature epitaxy: A very corrosive process Development of new protective coatings against increasingly hot and corrosive environments Tantalum carbide (TaC) coatings: The equipment can resist the process for several hundreds of hours (versus several hours with an SiC coating) Graphite parts coated with new ultra-pure materials (including TaC) for SiC or GaN epitaxial processes 16
13 CURRENT CHALLENGES Business challenges Support the development of the MOCVD market in Asia (LED market growth) Technical challenges Contribute to performance improvements in hightemperature epitaxy processes Support advances (size/yield) in the ingot growth processes (silicon, SiC, sapphire, etc.) Make power components more competitive (especially for electric vehicles) Capex around USD15m over 2 years (US and China) 17
14 CAPABILITIES TO SERVE MARKET NEEDS An extensive range for the major OEMs Customized offerings Expertise in materials: graphite + insulator + coatings High-precision machining Global sales coverage serving major OEMs: Applied Materials, GT, etc. Manufacturing facilities specialized in semiconductors serving local markets: US, Europe, Asia 18
15 GOING FORWARD DEVELOPMENT OF POWER COMPONENTS ON SIC SUBSTRATES $340 m +21% CAGR R&D and other Rail UPS Communications Renewable Energies Converteur $72 m EV/HEV Source: Yole
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