Nominal depths (step heights) in µm 0.05; 0.1; 0.23; ; 2; 5; 10; 20; 50; ; 400; 500; 525; 600; 900; 1000

Transcription

1 Nr.: A01 SiMetricS Depth Setting Standards VS EN ISO , Type A1 Chip size: 16 mm x 16 mm a: Groove for calibration of the depth b: Large groove for interferometric calibration or for building a step in height in combination wit groove a c: Groove with vertical sidewalls for calibration of optical instruments and for trancig of steep stylus tips d: Positioning scale with 25 periods (period length: 250 µm) e: Grooves to mark the position for calibration Nominal depths (step heights) in µm Type O 0.05; 0.1; 0.23; 0.45 Type E 1; 2; 5; 10; 20; 50; 100 Type P 200; 400; 500; 525; 600; 900; 1000

2 Nr.: A02 Pelco, AFM Gold spheres AFM scan of 7.7, 14.6 and 28.4nm gold particles. Note: Scan (arrow) of 28.4nm particle indicates the presence of a tip artifact.

3 Nr.: A03 Sloan/Dektak, jetzt Veeco Nr.: A04 Nr.: A05

4 Nr.: A06 Halle, Typ A2 Nr.: A07 SMU, Typ A1

5 Nr.: A08 PTB Cu depth setting standard, type 900 µm Nr.: B01 MikroMasch, Typ TGZ Nr.: B02 MikroMasch TGF 11

6 Nr.: B03 NTT-AT Nr.: C01 MikroMasch UMG Nr.: C02 VLSI STS 2

7 Nr.: C03 VLSI, Typ STR3 Nr.: C04 VLSI, STR3

8 Nr.: C05 VLSI STR 10 Nr.: C06 EU-Normal, Nanosensors

9 Nr.: D01 SiMetricS lateral standard, type LS (top: sketch, bottom: photograph) for the calibration of a horizontal axis of microscopes and of tactile or optical instruments (EN ISO , Type C3) Chip size: 70 mm x 20 mm a: 6 main scales each with 25 periods b: 5 additional scales each with 50 periods c: Structure for the assessment of an increment perpendicular to the scales d: Marks for adjustment Scale Period Total length Scale Period Total length a b a b a b a b a b a

10 Nr.: D02 ASM 750-HD Nr.: D03 MikroMasch TGG 01

11 Nr.: D04 Moxtek, Typ MXS Nr.: E01 2D-positioning artefact, Compugrahics photo-mask, Type BCR 7 6/95, pitch 20 mm

12 Nr.: E02 VLSI STS Nr.: E03 VLSI STR 3 Nr.: E04 VLSI STR 3 Nr.: E05 EU-Normal, Nanosensors, Typ 2D 300

13 Nr.: E06 EU-Normal, Ibsen, Typ 2D 1000 Nr.: E07 Nanosearch Membrane NanoCal Nr.: E08 MikroMasch TGX 01

14 Nr.: E09 Moxtek, MXS-302 CE Nr.: E10

15 Nr.: E11 Nr.: E12 Pelco 607-AFM 607-STM

16 Nr.: E13 SIS Nr.: E14 Supracon

17 Nr.: F01 3D-Nano-Normal, Ritter, BAM

18 Nr.: G01 SiMetricS flatness standard, type FtS Typ FtTS Chip size: 15 mm x 15 mm Chip height: 6 mm Deviation from the flat (peak to valley) in the central region of 10 mm x 10 mm: 110 nm Deviation from the flat (peak to valley) in the central region of 5 mm x 5 mm: 65 nm

19 Nr.: H01 Schichtdickennormal SiO2 on Si Nr.: I01 VLSI RAS

20 Nr.: J01 Pelco CD Nr.: J02 Supracon CD 200 nm 300 nm 800 nm 50 nm 100 nm 150 nm

21 Nr.: K01 SiMetricS Type1 4 gratings with the periods: 0.8; 1.0; 2.0; 2.5 µm Triangular profile: GrT70 (angle ) Triangular profile: GrT109 (angle )

22 Nr.: K02 SiMetricS Type2 1 grating with the period: 8 or 25 µm Trapezoidal profile: GrTz55 (Trapezoidal angle ) Depth: 3 µm for 8 µm period Depth: 11 µm for 25 µm period Triangular profile: GrT70 (angle ) Triangular profile: GrT109 (angle ) Arched profile: GrA

23 Nr.: K03 SiMetricS Type 3 1 grating with the period: 8 or 25 µm Rectangular profile: GrRw Depth: 1 µm for 8 µm period Depth: 5 µm for 25 µm period

24 Nr.: K04 SiMetricS Type 4 8 gratings with the periods: 4; 8; 20; 40; 80; 200; 400; 800 µm Rectangular profile: GrRd Depth: 90 nm or 3,4 µm Nr.: L01 PTB Micro contour artefact (stack of 3 artefacts)

25 Nr.: M01 PTB micro hole artefact Nr.: N01 SiMetricS probing force standard, type FC Type FC: Cantilever Chip size: 15 mm x 15 mm Thickness of the spring: 30; 50; 75; 100 µm Stiffness: mn/µm

26 Nr.: N02 SiMetricS probing force standard, type Type FB: Bridge Chip size: 15 mm x 15 mm Thickness of the spring: 30; 50; 75; 100 µm Stiffness: mn/µm