9 rue Alfred Kastler - BP Nantes Cedex 3 - France Phone : +33 (0) website :

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1 9 rue Alfred Kastler - BP Nantes Cedex 3 - France Phone : +33 (0) info@systemplus.fr - website : May Version 2 Written by: Sylvain HALLEREAU DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The quoted trademarks are property of their owners by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 1

2 Table of Contents Glossary Overview / Introduction Executive Summary Reverse Costing Methodology Visera Physical Analysis About the Physical Analysis Physical Analysis Methodology Package Characteristics Package X-Ray Package Opening Package Cross-Section Visera LED Wafer Package LED Dimensions LED Details LED Edge LED Cross-Section LED Structure LED Synthesis SemiLEDs Patents 3. Manufacturing Process Flow. 31 LED Die Process Flow Description of the Wafer Fabrication Unit 4. Cost Analysis Synthesis of the Cost Analysis Yields Explanation Hypothesis LED Front-End Cost Front-End : Epitaxy Hypotheses Front-End : Epitaxy Cost Front-End : Epitaxy Cost per Steps Front-End : Other Front-End Cost Front-End Cost per Equipment Family Front-End Cost per Consumable Family Dies per Wafer & Probe Test Back-End 0 : Probe Cost Back-End 0 : Dicing Cost LED Wafer & Die Cost (FE + BE 0) Back-End 1 : Packaging Hypothesis Back-End 1 : Packaging Process Flow Back-End 1 : Packaging Cost Details Back-End 1 : Final Test Cost Component Manufacturing Cost (FE+BE0+BE1) Cost Analysis Evolution 5. Estimated Manufacturer Price Analysis 66 Price definitions Manufacturers financial ratios Binning Impact on Manufacturing Price Ideal manufacturer Price Manufacturing Price with Binning Yield Contact by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 2

3 Package X-Ray Cathode electrode three bond wires are attached to the cathode electrode: 2 of them go to the top of the LED die and one to the top electrode of a small parallel protection diode. Heat sink It is 2 metal layers silicon carrier. ESD Protection diode at the side of the heat sink. Anode Cathode Anode Cathode X-ray Right view X-ray Rear view 2010 by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 3

4 Package Cross-Section Semi-rigid lens Fluorescent medium Silicone Body (silicon) Heat sink (Cu) LED die Package cross-section. Semi-rigid lens Body (silicon) The silicone lens is molded on the 8 substrate. The silicone fills partially the 4 vias to enhance the adhesion between the lens and the silicon substrate. Metal layer (copper) Detail Package cross-section : via by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 4

5 LED Dimensions SL-V-B40AK datasheet Die area: 1.06mm x 1.018mm = 1.12 mm² Active area: 0.97 mm x 0.97 mm The cathode metallization has been removed during the package disassembly. LED die SEM view. (Die thickness = 138µm) 2010 by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 5

6 LED Anode Contact The anode contact is composed of: x (µm), y ( µm), z( µm) and copper. SEM view : end of the silver layer under the cathod GaN 2µm GaN x y z SEM view detail : The silver layer is discontinued under the n-electrode, possibly to prevent optical standing waves in operation. Copper 2010 by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 6

7 LED Die Process Flow (1/3) (1) (1) GaN layer composed by buffer GaN, n-gan, MQW and p-gan layers are grown on a sapphire substrate wafer. A thin InGaN is firstly deposited to facilitate the laser lift-off step. (2) Double trench are manufactured in the GaN defining the edge of each active area. (2) (Fig. 1b US patent SemiLEDs) (3) (3) The p-doped surface is metalized (Ag), mirror layer by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 7

8 Front-End Cost per equipment family The main part of the equipment cost is due to the Epitaxy step (73%) because it is a long duration step with an expensive equipment. Details of the equipment cost per step are given in the Excel Spreadsheet by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 8

9 LED Wafer & Die Cost (FE+BE 0) The final wafer cost range from $xxx to $yyy according to yield variations. The final LED die cost range from $0.xx to $0.yy according to yield variations. The Front-End (FE) cost represents pp% (Substrate + Epitaxy + Other FE). The Back-End 0 cost (Probe Test) represents pp% by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 9

10 Back-End 1 : Packaging Cost Details The total packaging cost is estimated to $ The cost by step includes the equipment cost, the material cost and the labour cost by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 10

11 Contact Reverse costing analysis represents the best cost/price evaluation given the publically available data, completed with industry expert estimates. These results are open for discussion. We can re-evaluate this circuit with your information. Please contact us: 2010 by SYSTEM PLUS CONSULTING, all rights reserved. VisEra 3535 LED SemiLEDs SL-V-B40AK 11